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GB1155236A - Semiconductor Device for the Control of Alternating Current. - Google Patents

Semiconductor Device for the Control of Alternating Current.

Info

Publication number
GB1155236A
GB1155236A GB1196167A GB1196167A GB1155236A GB 1155236 A GB1155236 A GB 1155236A GB 1196167 A GB1196167 A GB 1196167A GB 1196167 A GB1196167 A GB 1196167A GB 1155236 A GB1155236 A GB 1155236A
Authority
GB
United Kingdom
Prior art keywords
housing
elements
metal plates
rectifier
massive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1196167A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Secheron SA
Original Assignee
Ateliers de Secheron SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CH389666A external-priority patent/CH445628A/en
Application filed by Ateliers de Secheron SA filed Critical Ateliers de Secheron SA
Publication of GB1155236A publication Critical patent/GB1155236A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/44—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements the complete device being wholly immersed in a fluid other than air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Rectifiers (AREA)
  • Thyristors (AREA)

Abstract

1,155,236. Rectifier assemblies. SOC. ANON DES ATELIERS DE SECHERON. 14 March, 1967 [16 March, 1966], No. 11961/67. Heading H1K. A pair of semi-conductor rectifier elements connected in anti-parallel are contained in a common housing between a pair of massive metal plates through which pressure is exerted on the elements either directly or through the housing walls. The elements may both be controlled rectifiers, with independent external control as in Fig. 1, or with a common external control terminal connected within the housing either via resistors to the inner P and N zones respectively of the elements or via a transformer the secondaries of which are each connected in series with a diode and/or a resistor across the cathode and inner P zone of the respective element. Alternatively, one of the elements may be a PN diode rectifier. The massive metal plates 6, 66, e.g. of copper or aluminium, may be outside the housing as in Fig. 1, may constitute the housing walls or be within the housing. In the latter two cases there may be in addition further massive finned metal plates outside the housing. Where there are more than two elements in the housing they may be disposed at the apices of a triangle or in a straight line.
GB1196167A 1966-03-16 1967-03-14 Semiconductor Device for the Control of Alternating Current. Expired GB1155236A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH389566A CH448213A (en) 1966-03-16 1966-03-16 AC semiconductor control device
CH389666A CH445628A (en) 1966-03-16 1966-03-16 Parallel semiconductor rectifier device

Publications (1)

Publication Number Publication Date
GB1155236A true GB1155236A (en) 1969-06-18

Family

ID=25694119

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1196267A Expired GB1168851A (en) 1966-03-16 1967-03-14 Semiconductor Rectifier Device in Parallel Connection
GB1196167A Expired GB1155236A (en) 1966-03-16 1967-03-14 Semiconductor Device for the Control of Alternating Current.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1196267A Expired GB1168851A (en) 1966-03-16 1967-03-14 Semiconductor Rectifier Device in Parallel Connection

Country Status (4)

Country Link
CH (1) CH448213A (en)
DE (2) DE1614444C2 (en)
FR (2) FR1515457A (en)
GB (2) GB1168851A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3336979A1 (en) * 1982-10-12 1984-04-26 Mitsubishi Denki K.K., Tokio/Tokyo Turn-off thyristor module

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143336A1 (en) * 1981-10-31 1983-05-19 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg SEMICONDUCTOR RECTIFIER UNIT
US4538170A (en) * 1983-01-03 1985-08-27 General Electric Company Power chip package
JPS61218151A (en) * 1985-03-23 1986-09-27 Hitachi Ltd Semiconductor device
US5006921A (en) * 1988-03-31 1991-04-09 Kabushiki Kaisha Toshiba Power semiconductor switching apparatus with heat sinks
DE19615112A1 (en) * 1996-04-17 1997-10-23 Asea Brown Boveri Power semiconductor component with two-lid housing

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH338528A (en) * 1954-07-31 1959-05-31 Siemens Ag Dry rectifier arrangement
BE633287A (en) * 1962-06-09
FR1399802A (en) * 1963-05-03 1965-05-21 Westinghouse Electric Corp Electrical appliance
US3370207A (en) * 1964-02-24 1968-02-20 Gen Electric Multilayer contact system for semiconductor devices including gold and copper layers
FR1431304A (en) * 1964-03-30 1966-03-11 Gen Electric Improvements made to contact members for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3336979A1 (en) * 1982-10-12 1984-04-26 Mitsubishi Denki K.K., Tokio/Tokyo Turn-off thyristor module

Also Published As

Publication number Publication date
DE1614445B2 (en) 1974-08-08
DE1614445C3 (en) 1975-04-03
DE1614444B1 (en) 1974-08-01
DE1614445A1 (en) 1970-09-10
FR1515458A (en) 1968-03-01
FR1515457A (en) 1968-03-01
DE1614444C2 (en) 1978-08-31
CH448213A (en) 1967-12-15
GB1168851A (en) 1969-10-29

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