FR96113E - Dispositif semi-conducteur. - Google Patents
Dispositif semi-conducteur.Info
- Publication number
- FR96113E FR96113E FR9496A FR96113DA FR96113E FR 96113 E FR96113 E FR 96113E FR 9496 A FR9496 A FR 9496A FR 96113D A FR96113D A FR 96113DA FR 96113 E FR96113 E FR 96113E
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68848867A | 1967-12-06 | 1967-12-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR96113E true FR96113E (fr) | 1972-05-19 |
Family
ID=24764627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9496A Expired FR96113E (fr) | 1967-12-06 | Dispositif semi-conducteur. |
Country Status (4)
Country | Link |
---|---|
US (1) | US3593068A (fr) |
DE (1) | DE1810322C3 (fr) |
FR (1) | FR96113E (fr) |
GB (1) | GB1176599A (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3786316A (en) * | 1970-05-15 | 1974-01-15 | Sperry Rand Corp | High frequency diode energy transducer and method of manufacture |
JPS5232234B2 (fr) * | 1971-10-11 | 1977-08-19 | ||
JPS5138879A (fr) * | 1974-09-27 | 1976-03-31 | Hitachi Ltd | |
JPS5165585A (fr) * | 1974-12-04 | 1976-06-07 | Hitachi Ltd | |
JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
US4374392A (en) * | 1980-11-25 | 1983-02-15 | Rca Corporation | Monolithic integrated circuit interconnection and fabrication method |
JPS57176746A (en) * | 1981-04-21 | 1982-10-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit and manufacture thereof |
DE3378393D1 (en) * | 1982-05-11 | 1988-12-08 | Nec Corp | Multilayer electrostrictive element which withstands repeated application of pulses |
US5728594A (en) * | 1994-11-02 | 1998-03-17 | Texas Instruments Incorporated | Method of making a multiple transistor integrated circuit with thick copper interconnect |
US6150722A (en) * | 1994-11-02 | 2000-11-21 | Texas Instruments Incorporated | Ldmos transistor with thick copper interconnect |
US6372586B1 (en) | 1995-10-04 | 2002-04-16 | Texas Instruments Incorporated | Method for LDMOS transistor with thick copper interconnect |
KR100237679B1 (ko) * | 1995-12-30 | 2000-01-15 | 윤종용 | 저항 차를 줄이는 팬 아웃부를 가지는 액정 표시 패널 |
US6140702A (en) * | 1996-05-31 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
US6140150A (en) * | 1997-05-28 | 2000-10-31 | Texas Instruments Incorporated | Plastic encapsulation for integrated circuits having plated copper top surface level interconnect |
US6342442B1 (en) * | 1998-11-20 | 2002-01-29 | Agere Systems Guardian Corp. | Kinetically controlled solder bonding |
JP2018044811A (ja) * | 2016-09-13 | 2018-03-22 | 株式会社村田製作所 | ピエゾ抵抗型センサ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3063129A (en) * | 1956-08-08 | 1962-11-13 | Bendix Corp | Transistor |
US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
US3355636A (en) * | 1965-06-29 | 1967-11-28 | Rca Corp | High power, high frequency transistor |
US3457631A (en) * | 1965-11-09 | 1969-07-29 | Gen Electric | Method of making a high frequency transistor structure |
-
0
- FR FR9496A patent/FR96113E/fr not_active Expired
-
1967
- 1967-12-06 US US688488A patent/US3593068A/en not_active Expired - Lifetime
-
1968
- 1968-11-22 DE DE1810322A patent/DE1810322C3/de not_active Expired
- 1968-11-29 GB GB56889/68A patent/GB1176599A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1810322C3 (de) | 1979-12-06 |
DE1810322A1 (de) | 1970-03-19 |
DE1810322B2 (de) | 1979-04-05 |
US3593068A (en) | 1971-07-13 |
GB1176599A (en) | 1970-01-07 |
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