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FR3079657B1 - Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure - Google Patents

Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure Download PDF

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Publication number
FR3079657B1
FR3079657B1 FR1852715A FR1852715A FR3079657B1 FR 3079657 B1 FR3079657 B1 FR 3079657B1 FR 1852715 A FR1852715 A FR 1852715A FR 1852715 A FR1852715 A FR 1852715A FR 3079657 B1 FR3079657 B1 FR 3079657B1
Authority
FR
France
Prior art keywords
disassembled
separating
applying
composite structure
light flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1852715A
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English (en)
Other versions
FR3079657A1 (fr
Inventor
Jean-Marc Bethoux
Guillaume Besnard
Yann Sinquin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1852715A priority Critical patent/FR3079657B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to EP19718440.1A priority patent/EP3776633A1/fr
Priority to JP2020552316A priority patent/JP7311528B2/ja
Priority to CN201980035862.9A priority patent/CN112204711B/zh
Priority to KR1020207030489A priority patent/KR102682067B1/ko
Priority to PCT/FR2019/050654 priority patent/WO2019186036A1/fr
Priority to SG11202009469XA priority patent/SG11202009469XA/en
Priority to US17/043,456 priority patent/US11469367B2/en
Publication of FR3079657A1 publication Critical patent/FR3079657A1/fr
Application granted granted Critical
Publication of FR3079657B1 publication Critical patent/FR3079657B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10P34/42—
    • H10P90/1916—
    • H10P95/11—
    • H10W10/181—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Laminated Bodies (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Processing Of Solid Wastes (AREA)
  • Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)

Abstract

L'invention concerne une structure composite (100) démontable au moyen d'un flux lumineux, comprenant successivement : - un substrat (1), - une couche (2) optiquement absorbante en un matériau adapté pour absorber au moins partiellement un flux lumineux, le substrat étant sensiblement transparent audit flux lumineux, - une couche sacrificielle (3) adaptée pour se dissocier sous l'application d'une température supérieure à une température de dissociation, en un matériau différent de celui de la couche optiquement absorbante (2), - au moins une couche (4) à séparer.
FR1852715A 2018-03-29 2018-03-29 Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure Active FR3079657B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1852715A FR3079657B1 (fr) 2018-03-29 2018-03-29 Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure
JP2020552316A JP7311528B2 (ja) 2018-03-29 2019-03-22 光束を用いることによって取外し可能な複合構造の分離方法
CN201980035862.9A CN112204711B (zh) 2018-03-29 2019-03-22 通过光束分离可移除复合结构的方法
KR1020207030489A KR102682067B1 (ko) 2018-03-29 2019-03-22 광 플럭스를 사용하여 제거 가능한 복합 구조물을 분리하는 방법
EP19718440.1A EP3776633A1 (fr) 2018-03-29 2019-03-22 Procédé de séparation d'une structure composite démontable au moyen d'un flux lumineux
PCT/FR2019/050654 WO2019186036A1 (fr) 2018-03-29 2019-03-22 Procédé de séparation d'une structure composite démontable au moyen d'un flux lumineux
SG11202009469XA SG11202009469XA (en) 2018-03-29 2019-03-22 Method for separating a removable composite structure by means of a light flux
US17/043,456 US11469367B2 (en) 2018-03-29 2019-03-22 Method for separating a removable composite structure by means of a light flux

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1852715 2018-03-29
FR1852715A FR3079657B1 (fr) 2018-03-29 2018-03-29 Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure

Publications (2)

Publication Number Publication Date
FR3079657A1 FR3079657A1 (fr) 2019-10-04
FR3079657B1 true FR3079657B1 (fr) 2024-03-15

Family

ID=62751066

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1852715A Active FR3079657B1 (fr) 2018-03-29 2018-03-29 Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure

Country Status (8)

Country Link
US (1) US11469367B2 (fr)
EP (1) EP3776633A1 (fr)
JP (1) JP7311528B2 (fr)
KR (1) KR102682067B1 (fr)
CN (1) CN112204711B (fr)
FR (1) FR3079657B1 (fr)
SG (1) SG11202009469XA (fr)
WO (1) WO2019186036A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3104809B1 (fr) 2019-12-11 2021-12-17 Commissariat Energie Atomique Procede de realisation d’une couche de materiau structuree
FR3105748B1 (fr) * 2019-12-26 2022-09-02 Aledia Dispositif pour traitement par laser et procédé de traitement au laser
JP7797188B2 (ja) * 2021-12-14 2026-01-13 キオクシア株式会社 半導体装置、及び半導体装置の製造方法
FR3151701A1 (fr) * 2023-07-28 2025-01-31 Soitec Substrat semiconducteur détachable en carbure de silicium polycristallin
WO2025034222A1 (fr) * 2023-08-10 2025-02-13 Tokyo Electron Limited Couche de libération pour processus de décollement au laser ir
FR3155625A1 (fr) 2023-11-20 2025-05-23 Soitec Support muni d’un miroir de bragg, prevu pour le transfert d’une couche par separation laser
CN119419187A (zh) * 2024-11-05 2025-02-11 成都莱普科技股份有限公司 键合结构、芯片及键合结构的制备方法
CN120751921B (zh) * 2025-09-01 2025-11-07 达波科技(上海)有限公司 一种基于Si-SiC-石墨烯衬底的POI衬底及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
DE19839574A1 (de) * 1998-08-31 2000-03-02 Richard Sizmann Verfahren und Schichtkombination zur Erzeugung von Wärme in Bekleidung bzw. Decken
JP3962282B2 (ja) * 2002-05-23 2007-08-22 松下電器産業株式会社 半導体装置の製造方法
JP4934942B2 (ja) * 2003-07-23 2012-05-23 ソニー株式会社 剥離方法
FR2870988B1 (fr) * 2004-06-01 2006-08-11 Michel Bruel Procede de realisation d'une structure multi-couches comportant, en profondeur, une couche de separation
WO2006132382A2 (fr) 2005-06-07 2006-12-14 Fujifilm Corporation Film fonctionnel comprenant une structure et procede de fabrication d'un film fonctionnel
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
KR101102662B1 (ko) * 2010-04-02 2012-01-04 경희대학교 산학협력단 Ｇａ-Ｏ-Ｎ 계열의 희생층을 이용한 플렉서블 반도체 소자의 제조 방법
FR2961719B1 (fr) * 2010-06-24 2013-09-27 Soitec Silicon On Insulator Procede de traitement d'une piece en un materiau compose
JP5735774B2 (ja) * 2010-09-30 2015-06-17 芝浦メカトロニクス株式会社 保護体、基板積層体、貼り合わせ装置、剥離装置、および基板の製造方法
RU2469433C1 (ru) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
JP5685567B2 (ja) * 2012-09-28 2015-03-18 株式会社東芝 表示装置の製造方法
FR3009644B1 (fr) * 2013-08-08 2016-12-23 Soitec Silicon On Insulator Procede, empilement et ensemble de separation d'une structure d'un substrat par irradiations electromagnetiques
WO2015077779A1 (fr) * 2013-11-25 2015-05-28 The Board Of Trustees Of The Leland Stanford Junior University Ecaillage au laser de structures de film mince épitaxiales
WO2016114382A1 (fr) * 2015-01-16 2016-07-21 住友電気工業株式会社 Procédé de fabrication de substrat semi-conducteur, substrat semi-conducteur, procédé de fabrication de substrat semi-conducteur composite, substrat semi-conducteur composite, et substrat de soudage semi-conducteur
CN107206544A (zh) * 2015-01-28 2017-09-26 西尔特克特拉有限责任公司 透明的并且高度稳定的显示屏保护件
US11183674B2 (en) * 2018-02-27 2021-11-23 Sakai Display Products Corporation Method for manufacturing flexible OLED device and support substrate

Also Published As

Publication number Publication date
FR3079657A1 (fr) 2019-10-04
CN112204711A (zh) 2021-01-08
US20210028348A1 (en) 2021-01-28
KR20200136955A (ko) 2020-12-08
WO2019186036A1 (fr) 2019-10-03
CN112204711B (zh) 2024-06-25
EP3776633A1 (fr) 2021-02-17
JP7311528B2 (ja) 2023-07-19
KR102682067B1 (ko) 2024-07-08
JP2021520065A (ja) 2021-08-12
US11469367B2 (en) 2022-10-11
SG11202009469XA (en) 2020-10-29

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