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FR3076398B1 - Transistor et son procede de fabrication - Google Patents

Transistor et son procede de fabrication Download PDF

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Publication number
FR3076398B1
FR3076398B1 FR1763408A FR1763408A FR3076398B1 FR 3076398 B1 FR3076398 B1 FR 3076398B1 FR 1763408 A FR1763408 A FR 1763408A FR 1763408 A FR1763408 A FR 1763408A FR 3076398 B1 FR3076398 B1 FR 3076398B1
Authority
FR
France
Prior art keywords
transistor
active layer
dimension
extension
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1763408A
Other languages
English (en)
Other versions
FR3076398A1 (fr
Inventor
Philippe Trovati
Nicolas Pons
Pascal Costaganna
Francis DOMART
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab France SAS
Original Assignee
X Fab France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Fab France SAS filed Critical X Fab France SAS
Priority to FR1763408A priority Critical patent/FR3076398B1/fr
Priority to US16/232,826 priority patent/US11031505B2/en
Publication of FR3076398A1 publication Critical patent/FR3076398A1/fr
Application granted granted Critical
Publication of FR3076398B1 publication Critical patent/FR3076398B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

La présente invention concerne un transistor porté par un substrat comprenant une couche active, le transistor comprenant : a) au moins une zone source (3a) et au moins une zone drain (3b) ; b) au moins une zone de contact électrique (3c) ; c) au moins un canal de conduction ; d) au moins une grille (4a) ; ledit transistor étant caractérisé en ce que ladite grille (4a) comprend : (1) une portion longitudinale (4b) ; (2) une portion transversale (4c) s'étendant de part et d'autre d'une portion de la couche active (1 a) et comprenant : (a) au moins une première partie (4c1) s'étendant au-delà d'une partie d'un premier côté de ladite portion de la couche active (1a) sur une première dimension d'extension I2 ; (b) au moins une deuxième partie (4c2) s'étendant au-delà d'une partie d'un deuxième côté de ladite portion de la couche active (1a) sur une deuxième dimension d'extension I3 ; et en ce que : I2 > I3 avec I3 ≠ 0.
FR1763408A 2017-12-29 2017-12-29 Transistor et son procede de fabrication Active FR3076398B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1763408A FR3076398B1 (fr) 2017-12-29 2017-12-29 Transistor et son procede de fabrication
US16/232,826 US11031505B2 (en) 2017-12-29 2018-12-26 Transistor and its manufacturing process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1763408 2017-12-29
FR1763408A FR3076398B1 (fr) 2017-12-29 2017-12-29 Transistor et son procede de fabrication

Publications (2)

Publication Number Publication Date
FR3076398A1 FR3076398A1 (fr) 2019-07-05
FR3076398B1 true FR3076398B1 (fr) 2019-12-27

Family

ID=61873503

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1763408A Active FR3076398B1 (fr) 2017-12-29 2017-12-29 Transistor et son procede de fabrication

Country Status (2)

Country Link
US (1) US11031505B2 (fr)
FR (1) FR3076398B1 (fr)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6307237B1 (en) * 1999-12-28 2001-10-23 Honeywell International Inc. L-and U-gate devices for SOI/SOS applications
JP4614522B2 (ja) * 2000-10-25 2011-01-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US6620656B2 (en) * 2001-12-19 2003-09-16 Motorola, Inc. Method of forming body-tied silicon on insulator semiconductor device
JP2003318405A (ja) * 2002-04-25 2003-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4294935B2 (ja) * 2002-10-17 2009-07-15 株式会社ルネサステクノロジ 半導体装置
US6905919B2 (en) * 2003-07-29 2005-06-14 Chartered Semiconductor Manufacturing Ltd. Method of forming a partially depleted silicon on insulator (PDSOI) transistor with a pad lock body extension
US7011980B1 (en) * 2005-05-09 2006-03-14 International Business Machines Corporation Method and structures for measuring gate tunneling leakage parameters of field effect transistors
JP4565512B2 (ja) * 2006-09-27 2010-10-20 Ｏｋｉセミコンダクタ株式会社 Ｆｅｔの容量取得用ｔｅｇおよび容量取得方法
US8946819B2 (en) * 2013-05-08 2015-02-03 Globalfoundries Singapore Pte. Ltd. Silicon-on-insulator integrated circuits with local oxidation of silicon and methods for fabricating the same
US9685364B2 (en) * 2014-09-05 2017-06-20 Globalfoundries Singapore Pte. Ltd. Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the same
US9421087B1 (en) * 2015-04-27 2016-08-23 International Business Machines Corporation Artificial electronic skin
US9780207B2 (en) * 2015-12-30 2017-10-03 Globalfoundries Singapore Pte. Ltd. Self-aligned high voltage LDMOS

Also Published As

Publication number Publication date
FR3076398A1 (fr) 2019-07-05
US20190245097A1 (en) 2019-08-08
US11031505B2 (en) 2021-06-08

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