FR3053156B1 - Composant a faible dispersion dans une puce electronique - Google Patents
Composant a faible dispersion dans une puce electronique Download PDFInfo
- Publication number
- FR3053156B1 FR3053156B1 FR1656020A FR1656020A FR3053156B1 FR 3053156 B1 FR3053156 B1 FR 3053156B1 FR 1656020 A FR1656020 A FR 1656020A FR 1656020 A FR1656020 A FR 1656020A FR 3053156 B1 FR3053156 B1 FR 3053156B1
- Authority
- FR
- France
- Prior art keywords
- electronic chip
- low dispersion
- dispersion component
- component
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000006185 dispersion Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Semiconductor Integrated Circuits (AREA)
- General Engineering & Computer Science (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1656020A FR3053156B1 (fr) | 2016-06-28 | 2016-06-28 | Composant a faible dispersion dans une puce electronique |
CN201611023603.9A CN107546143B (zh) | 2016-06-28 | 2016-11-21 | 电子芯片中的低差量部件 |
CN201621244897.3U CN206271699U (zh) | 2016-06-28 | 2016-11-21 | 包含电子芯片的半导体晶圆和集成电路芯片 |
US15/380,894 US10043741B2 (en) | 2016-06-28 | 2016-12-15 | Low-dispersion component in an electronic chip |
US16/033,109 US11244893B2 (en) | 2016-06-28 | 2018-07-11 | Low-dispersion component in an electronic chip |
US17/566,437 US12087683B2 (en) | 2016-06-28 | 2021-12-30 | Low-dispersion component in an electronic chip |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1656020 | 2016-06-28 | ||
FR1656020A FR3053156B1 (fr) | 2016-06-28 | 2016-06-28 | Composant a faible dispersion dans une puce electronique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3053156A1 FR3053156A1 (fr) | 2017-12-29 |
FR3053156B1 true FR3053156B1 (fr) | 2018-11-16 |
Family
ID=57348793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1656020A Expired - Fee Related FR3053156B1 (fr) | 2016-06-28 | 2016-06-28 | Composant a faible dispersion dans une puce electronique |
Country Status (3)
Country | Link |
---|---|
US (3) | US10043741B2 (fr) |
CN (2) | CN206271699U (fr) |
FR (1) | FR3053156B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3053156B1 (fr) * | 2016-06-28 | 2018-11-16 | Stmicroelectronics (Rousset) Sas | Composant a faible dispersion dans une puce electronique |
US10620654B2 (en) * | 2016-08-31 | 2020-04-14 | Delta Electronics (Shanghai) Co., Ltd | Alternatingly-switched parallel circuit, integrated power module and integrated power package |
CN110168682A (zh) * | 2017-12-15 | 2019-08-23 | 深圳市汇顶科技股份有限公司 | 电容器的制作方法及电容器 |
US11515247B2 (en) * | 2021-01-14 | 2022-11-29 | Qualcomm Incorporated | Capacitance fine tuning by fin capacitor design |
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US6750527B1 (en) * | 1996-05-30 | 2004-06-15 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method |
JPH1070243A (ja) * | 1996-05-30 | 1998-03-10 | Toshiba Corp | 半導体集積回路装置およびその検査方法およびその検査装置 |
US5779922A (en) * | 1996-11-07 | 1998-07-14 | Micrel, Incorporated | Resistor value control technique |
US6133834A (en) * | 1997-03-06 | 2000-10-17 | Texas Instruments Deutschland, Gmbh | Method of trimming film type antennas |
US6198153B1 (en) * | 1997-04-21 | 2001-03-06 | Lsi Logic Corporation | Capacitors with silicized polysilicon shielding in digital CMOS process |
US6147011A (en) * | 1998-02-28 | 2000-11-14 | Micron Technology, Inc. | Methods of forming dielectric layers and methods of forming capacitors |
JPH11273360A (ja) * | 1998-03-17 | 1999-10-08 | Toshiba Corp | 強誘電体記憶装置 |
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JP4937495B2 (ja) * | 2003-12-25 | 2012-05-23 | 新光電気工業株式会社 | キャパシタ装置、電子部品実装構造及びキャパシタ装置の製造方法 |
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FR2884646B1 (fr) * | 2005-04-19 | 2007-09-14 | St Microelectronics Sa | Procede de fabrication d'un circuit integre comprenant un condensateur tridimensionnel |
CN100424879C (zh) * | 2005-09-22 | 2008-10-08 | 中国科学院半导体研究所 | 深亚微米cmos工艺电感补偿型光电探测器及制作方法 |
CN100502051C (zh) * | 2006-03-01 | 2009-06-17 | 中华映管股份有限公司 | 薄膜晶体管阵列及其修补方法 |
US9035359B2 (en) * | 2006-03-09 | 2015-05-19 | Tela Innovations, Inc. | Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods |
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FR3053156B1 (fr) * | 2016-06-28 | 2018-11-16 | Stmicroelectronics (Rousset) Sas | Composant a faible dispersion dans une puce electronique |
US10651268B2 (en) * | 2018-06-15 | 2020-05-12 | Qualcomm Incorporated | Metal-oxide-metal capacitor with improved alignment and reduced capacitance variance |
US11515247B2 (en) * | 2021-01-14 | 2022-11-29 | Qualcomm Incorporated | Capacitance fine tuning by fin capacitor design |
US11626236B2 (en) * | 2021-03-08 | 2023-04-11 | Qualcomm Incorporated | Stacked inductor having a discrete metal-stack pattern |
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US20230275004A1 (en) * | 2022-02-28 | 2023-08-31 | Qualcomm Incorporated | Capacitor embedded 3d resonator for broadband filter |
US12040268B2 (en) * | 2022-06-01 | 2024-07-16 | Qualcomm Incorporated | Thin film resistor (TFR) device structure for high performance radio frequency (RF) filter design |
-
2016
- 2016-06-28 FR FR1656020A patent/FR3053156B1/fr not_active Expired - Fee Related
- 2016-11-21 CN CN201621244897.3U patent/CN206271699U/zh not_active Withdrawn - After Issue
- 2016-11-21 CN CN201611023603.9A patent/CN107546143B/zh active Active
- 2016-12-15 US US15/380,894 patent/US10043741B2/en active Active
-
2018
- 2018-07-11 US US16/033,109 patent/US11244893B2/en active Active
-
2021
- 2021-12-30 US US17/566,437 patent/US12087683B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20220122910A1 (en) | 2022-04-21 |
CN107546143A (zh) | 2018-01-05 |
US20180323141A1 (en) | 2018-11-08 |
US20170373001A1 (en) | 2017-12-28 |
US11244893B2 (en) | 2022-02-08 |
US12087683B2 (en) | 2024-09-10 |
CN107546143B (zh) | 2021-05-07 |
FR3053156A1 (fr) | 2017-12-29 |
US10043741B2 (en) | 2018-08-07 |
CN206271699U (zh) | 2017-06-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20171229 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
ST | Notification of lapse |
Effective date: 20220205 |