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FR2973159B1 - Procede de fabrication d'un substrat de base - Google Patents

Procede de fabrication d'un substrat de base

Info

Publication number
FR2973159B1
FR2973159B1 FR1152353A FR1152353A FR2973159B1 FR 2973159 B1 FR2973159 B1 FR 2973159B1 FR 1152353 A FR1152353 A FR 1152353A FR 1152353 A FR1152353 A FR 1152353A FR 2973159 B1 FR2973159 B1 FR 2973159B1
Authority
FR
France
Prior art keywords
base substrate
manufacturing base
manufacturing
substrate
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1152353A
Other languages
English (en)
Other versions
FR2973159A1 (fr
Inventor
Oleg Kononchuk
Frederic Allibert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1152353A priority Critical patent/FR2973159B1/fr
Priority to TW101107519A priority patent/TWI458020B/zh
Priority to SG2012016770A priority patent/SG184651A1/en
Priority to KR1020120027527A priority patent/KR101379885B1/ko
Priority to CN201210074558.5A priority patent/CN102693933B/zh
Priority to JP2012064056A priority patent/JP5726796B2/ja
Priority to US13/426,190 priority patent/US8765571B2/en
Priority to EP12160793A priority patent/EP2503592A1/fr
Publication of FR2973159A1 publication Critical patent/FR2973159A1/fr
Application granted granted Critical
Publication of FR2973159B1 publication Critical patent/FR2973159B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76262—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR1152353A 2011-03-22 2011-03-22 Procede de fabrication d'un substrat de base Active FR2973159B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1152353A FR2973159B1 (fr) 2011-03-22 2011-03-22 Procede de fabrication d'un substrat de base
TW101107519A TWI458020B (zh) 2011-03-22 2012-03-06 供絕緣體上半導體類型底材所用之基底底材之製造方法
SG2012016770A SG184651A1 (en) 2011-03-22 2012-03-09 Method of manufacturing a base substrate for a semi-conductor on insulator type substrate
KR1020120027527A KR101379885B1 (ko) 2011-03-22 2012-03-19 반도체 온 절연체형 기판을 위한 베이스 기판의 제조 방법
CN201210074558.5A CN102693933B (zh) 2011-03-22 2012-03-20 用于绝缘体型衬底上的半导体的基础衬底的制造方法
JP2012064056A JP5726796B2 (ja) 2011-03-22 2012-03-21 絶縁体上の半導体タイプの基板のためのベース基板を製造する方法
US13/426,190 US8765571B2 (en) 2011-03-22 2012-03-21 Method of manufacturing a base substrate for a semi-conductor on insulator type substrate
EP12160793A EP2503592A1 (fr) 2011-03-22 2012-03-22 Procédé de fabrication d'un substrat de base pour un substrat de type semi-conducteur sur isolant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152353A FR2973159B1 (fr) 2011-03-22 2011-03-22 Procede de fabrication d'un substrat de base

Publications (2)

Publication Number Publication Date
FR2973159A1 FR2973159A1 (fr) 2012-09-28
FR2973159B1 true FR2973159B1 (fr) 2013-04-19

Family

ID=45841392

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152353A Active FR2973159B1 (fr) 2011-03-22 2011-03-22 Procede de fabrication d'un substrat de base

Country Status (8)

Country Link
US (1) US8765571B2 (fr)
EP (1) EP2503592A1 (fr)
JP (1) JP5726796B2 (fr)
KR (1) KR101379885B1 (fr)
CN (1) CN102693933B (fr)
FR (1) FR2973159B1 (fr)
SG (1) SG184651A1 (fr)
TW (1) TWI458020B (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2987166B1 (fr) 2012-02-16 2017-05-12 Soitec Silicon On Insulator Procede de transfert d'une couche
CN103296013B (zh) * 2013-05-28 2017-08-08 上海华虹宏力半导体制造有限公司 射频器件的形成方法
US8951896B2 (en) 2013-06-28 2015-02-10 International Business Machines Corporation High linearity SOI wafer for low-distortion circuit applications
EP3221885B1 (fr) 2014-11-18 2019-10-23 GlobalWafers Co., Ltd. Plaquette semi-conducteur sur isolant haute résistivité et procédé de fabrication
US10224233B2 (en) 2014-11-18 2019-03-05 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantation
WO2016140850A1 (fr) 2015-03-03 2016-09-09 Sunedison Semiconductor Limited Procédé pour déposer des films de silicium polycristallin de piégeage de charge sur des substrats de silicium avec une contrainte de film pouvant être maîtrisée
WO2016149113A1 (fr) 2015-03-17 2016-09-22 Sunedison Semiconductor Limited Couche de piégeage de charge thermiquement stable destinée à être utilisée dans la fabrication de structures semi-conducteur sur isolant
CN107667416B (zh) 2015-06-01 2021-08-31 环球晶圆股份有限公司 制造绝缘体上半导体的方法
CN114496732B (zh) 2015-06-01 2023-03-03 环球晶圆股份有限公司 制造绝缘体上硅锗的方法
JP6353814B2 (ja) 2015-06-09 2018-07-04 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN105261586B (zh) * 2015-08-25 2018-05-25 上海新傲科技股份有限公司 带有电荷陷阱和绝缘埋层衬底的制备方法
JP6749394B2 (ja) 2015-11-20 2020-09-02 グローバルウェーハズ カンパニー リミテッドＧｌｏｂａｌＷａｆｅｒｓ Ｃｏ．，Ｌｔｄ． 滑らかな半導体表面の製造方法
CN111201341B (zh) 2016-06-08 2023-04-04 环球晶圆股份有限公司 具有经改进的机械强度的高电阻率单晶硅锭及晶片
US10269617B2 (en) 2016-06-22 2019-04-23 Globalwafers Co., Ltd. High resistivity silicon-on-insulator substrate comprising an isolation region
SG10201913373WA (en) 2016-10-26 2020-03-30 Globalwafers Co Ltd High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiency
FR3066858B1 (fr) * 2017-05-23 2019-06-21 Soitec Procede pour minimiser une distorsion d'un signal dans un circuit radiofrequence
CN108987250B (zh) * 2017-06-02 2021-08-17 上海新昇半导体科技有限公司 衬底及其制作方法
US10468486B2 (en) * 2017-10-30 2019-11-05 Taiwan Semiconductor Manufacturing Company Ltd. SOI substrate, semiconductor device and method for manufacturing the same
JP6834932B2 (ja) * 2017-12-19 2021-02-24 株式会社Sumco 貼り合わせウェーハ用の支持基板の製造方法および貼り合わせウェーハの製造方法
KR102463727B1 (ko) 2018-06-08 2022-11-07 글로벌웨이퍼스 씨오., 엘티디. 얇은 실리콘 층의 전사 방법
US10943813B2 (en) 2018-07-13 2021-03-09 Globalwafers Co., Ltd. Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
FR3104322B1 (fr) 2019-12-05 2023-02-24 Soitec Silicon On Insulator Procédé de formation d'un substrat de manipulation pour une structure composite ciblant des applications rf
FR3129029B1 (fr) 2021-11-09 2023-09-29 Soitec Silicon On Insulator Procede de preparation d’un substrat support muni d’une couche de piegeage de charges
FR3129028B1 (fr) 2021-11-09 2023-11-10 Soitec Silicon On Insulator Procede de preparation d’un substrat support muni d’une couche de piegeage de charges
WO2024115411A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes
WO2024115410A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes.
WO2024115414A1 (fr) 2022-11-29 2024-06-06 Soitec Support comprenant une couche de piegeage de charges, substrat composite comprenant un tel support et procedes de fabrication associes
FR3146020A1 (fr) 2023-02-20 2024-08-23 Soitec Support comprenant une couche de piégeage de charges, substrat composite comprenant un tel support et procédé de fabrication associés

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FR2838865B1 (fr) 2002-04-23 2005-10-14 Soitec Silicon On Insulator Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee
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US7112509B2 (en) * 2003-05-09 2006-09-26 Ibis Technology Corporation Method of producing a high resistivity SIMOX silicon substrate
EP1665367A2 (fr) * 2003-09-26 2006-06-07 Universite Catholique De Louvain Procede de fabrication d'une structure semiconductrice multicouche a pertes ohmiques reduites
JP2007056336A (ja) * 2005-08-25 2007-03-08 Tokyo Electron Ltd 基板処理装置，基板処理装置の基板搬送方法，プログラム，プログラムを記録した記録媒体
US20070190681A1 (en) 2006-02-13 2007-08-16 Sharp Laboratories Of America, Inc. Silicon-on-insulator near infrared active pixel sensor array
US7598153B2 (en) * 2006-03-31 2009-10-06 Silicon Genesis Corporation Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species
US20070286956A1 (en) * 2006-04-07 2007-12-13 Applied Materials, Inc. Cluster tool for epitaxial film formation
FR2933233B1 (fr) 2008-06-30 2010-11-26 Soitec Silicon On Insulator Substrat de haute resistivite bon marche et procede de fabrication associe
FR2953640B1 (fr) * 2009-12-04 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante

Also Published As

Publication number Publication date
JP5726796B2 (ja) 2015-06-03
TW201239990A (en) 2012-10-01
EP2503592A1 (fr) 2012-09-26
KR20120107863A (ko) 2012-10-04
US20120244687A1 (en) 2012-09-27
FR2973159A1 (fr) 2012-09-28
CN102693933A (zh) 2012-09-26
KR101379885B1 (ko) 2014-04-01
TWI458020B (zh) 2014-10-21
US8765571B2 (en) 2014-07-01
SG184651A1 (en) 2012-10-30
JP2012199550A (ja) 2012-10-18
CN102693933B (zh) 2016-12-14

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