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FR2972838B1 - Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local - Google Patents

Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local

Info

Publication number
FR2972838B1
FR2972838B1 FR1152256A FR1152256A FR2972838B1 FR 2972838 B1 FR2972838 B1 FR 2972838B1 FR 1152256 A FR1152256 A FR 1152256A FR 1152256 A FR1152256 A FR 1152256A FR 2972838 B1 FR2972838 B1 FR 2972838B1
Authority
FR
France
Prior art keywords
decal
semiconductor memory
column decoder
local column
amplifiers associated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1152256A
Other languages
English (en)
Other versions
FR2972838A1 (fr
Inventor
Richard Ferrant
Gerhard Enders
Carlos Mazure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1152256A priority Critical patent/FR2972838B1/fr
Priority to EP11193263.8A priority patent/EP2500906B1/fr
Priority to KR1020110133670A priority patent/KR101334284B1/ko
Priority to SG2011092053A priority patent/SG184623A1/en
Priority to TW100146174A priority patent/TWI485704B/zh
Priority to CN201110416792.7A priority patent/CN102682833B/zh
Priority to JP2011273544A priority patent/JP5524942B2/ja
Priority to US13/422,697 priority patent/US9159400B2/en
Publication of FR2972838A1 publication Critical patent/FR2972838A1/fr
Application granted granted Critical
Publication of FR2972838B1 publication Critical patent/FR2972838B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
FR1152256A 2011-03-18 2011-03-18 Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local Expired - Fee Related FR2972838B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1152256A FR2972838B1 (fr) 2011-03-18 2011-03-18 Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local
KR1020110133670A KR101334284B1 (ko) 2011-03-18 2011-12-13 로컬 컬럼 디코더와 연관된 스태거링된 센스 증폭기들을 가진 반도체 메모리
SG2011092053A SG184623A1 (en) 2011-03-18 2011-12-13 Semiconductor memory having staggered sense amplifiers associated with a local column decoder
EP11193263.8A EP2500906B1 (fr) 2011-03-18 2011-12-13 Mémoire semi-conductrice dotée d'amplificateurs détecteurs décalés liés à un décodeur de colonnes local
TW100146174A TWI485704B (zh) 2011-03-18 2011-12-14 具有關聯於本地行解碼器之交錯感測放大器之半導體記憶體
CN201110416792.7A CN102682833B (zh) 2011-03-18 2011-12-14 半导体存储器
JP2011273544A JP5524942B2 (ja) 2011-03-18 2011-12-14 ローカル列デコーダに関連付けられた互い違いに配置されたセンスアンプを有する半導体メモリ
US13/422,697 US9159400B2 (en) 2011-03-18 2012-03-16 Semiconductor memory having staggered sense amplifiers associated with a local column decoder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152256A FR2972838B1 (fr) 2011-03-18 2011-03-18 Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local

Publications (2)

Publication Number Publication Date
FR2972838A1 FR2972838A1 (fr) 2012-09-21
FR2972838B1 true FR2972838B1 (fr) 2013-04-12

Family

ID=45093637

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152256A Expired - Fee Related FR2972838B1 (fr) 2011-03-18 2011-03-18 Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local

Country Status (8)

Country Link
US (1) US9159400B2 (fr)
EP (1) EP2500906B1 (fr)
JP (1) JP5524942B2 (fr)
KR (1) KR101334284B1 (fr)
CN (1) CN102682833B (fr)
FR (1) FR2972838B1 (fr)
SG (1) SG184623A1 (fr)
TW (1) TWI485704B (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2982700B1 (fr) 2011-11-15 2014-02-07 Soitec Silicon On Insulator Amplificateur de lecture avec transistors de precharge et de decodage a grille double
KR20140146369A (ko) 2013-06-17 2014-12-26 에스케이하이닉스 주식회사 반도체 메모리 장치 및 메모리 시스템
US9972395B2 (en) * 2015-10-05 2018-05-15 Silicon Storage Technology, Inc. Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems
US11087827B1 (en) * 2020-02-07 2021-08-10 Micron Technology, Inc. Edge memory array mats with sense amplifiers
WO2021188316A1 (fr) * 2020-03-19 2021-09-23 Rambus Inc. Tension d'écriture différée amplifiée
US11024366B1 (en) * 2020-04-24 2021-06-01 Micron Technology, Inc. Under-memory array process edge mats with sense amplifiers
CN114203247B (zh) * 2020-09-18 2024-03-26 长鑫存储技术有限公司 一种位线感测电路及存储器
EP4231301A4 (fr) 2020-09-18 2024-06-19 Changxin Memory Technologies, Inc. Circuit de détection de ligne de bits, et mémoire
CN114203230B (zh) * 2020-09-18 2023-09-15 长鑫存储技术有限公司 一种列选择信号单元电路、位线感测电路及存储器
JP2023008403A (ja) * 2021-07-06 2023-01-19 キオクシア株式会社 半導体集積回路

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JPS5880189A (ja) * 1981-11-05 1983-05-14 Fujitsu Ltd 半導体記憶装置
JPS6413290A (en) * 1987-07-07 1989-01-18 Oki Electric Ind Co Ltd Semiconductor memory
JPH02123596A (ja) * 1988-11-02 1990-05-11 Nec Corp 半導体メモリー
DE3937068C2 (de) * 1988-11-07 1994-10-06 Toshiba Kawasaki Kk Dynamische Halbleiterspeicheranordnung
JP2663651B2 (ja) * 1989-06-26 1997-10-15 日本電気株式会社 半導体記憶集積回路
JPH04252491A (ja) * 1991-01-28 1992-09-08 Nec Corp 半導体メモリ
JPH05182457A (ja) * 1991-12-26 1993-07-23 Toshiba Corp ダイナミック型半導体記憶装置
JPH06162771A (ja) * 1992-11-20 1994-06-10 Sanyo Electric Co Ltd 半導体記憶装置
JPH06275826A (ja) * 1993-03-24 1994-09-30 Fujitsu Ltd 半導体装置
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KR100224769B1 (ko) * 1995-12-29 1999-10-15 김영환 고속 버스트 리드/라이트 동작에 적합한 데이타 버스 라인 구조를 갖는 반도체 메모리 장치
US5666324A (en) * 1996-03-15 1997-09-09 Mitsubishi Denki Kabushiki Kaisha Clock synchronous semiconductor memory device having current consumption reduced
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JP3863968B2 (ja) * 1997-06-10 2006-12-27 株式会社ルネサステクノロジ 半導体記憶装置
US5822268A (en) * 1997-09-11 1998-10-13 International Business Machines Corporation Hierarchical column select line architecture for multi-bank DRAMs
KR100252053B1 (ko) * 1997-12-04 2000-05-01 윤종용 칼럼 방향의 데이터 입출력선을 가지는 반도체메모리장치와불량셀 구제회로 및 방법
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KR100732287B1 (ko) * 1999-04-08 2007-06-25 주식회사 하이닉스반도체 패킷 명령어 구동형 반도체 메모리 장치
JP4427847B2 (ja) * 1999-11-04 2010-03-10 エルピーダメモリ株式会社 ダイナミック型ｒａｍと半導体装置
JP4353621B2 (ja) * 2000-06-30 2009-10-28 株式会社ルネサステクノロジ 半導体装置
KR100384559B1 (ko) * 2000-06-30 2003-05-22 주식회사 하이닉스반도체 반도체 메모리 소자의 컬럼 디코딩 장치
JP4891472B2 (ja) 2000-07-10 2012-03-07 エルピーダメモリ株式会社 半導体集積回路装置
JP4044401B2 (ja) * 2002-09-11 2008-02-06 株式会社東芝 半導体記憶装置
KR100587692B1 (ko) * 2004-11-05 2006-06-08 삼성전자주식회사 반도체 메모리 장치에서의 회로 배선 배치구조와 그에따른 배치방법
JP2007109272A (ja) * 2005-10-11 2007-04-26 Elpida Memory Inc 半導体記憶装置
KR100666181B1 (ko) * 2005-12-27 2007-01-09 삼성전자주식회사 센스앰프 및 워드라인 드라이버 영역을 위한 면적을최소화하는 레이아웃을 가지는 반도체 메모리 장치
DE102007012902B3 (de) * 2007-03-19 2008-07-10 Qimonda Ag Kopplungsoptimierte Anschlusskonfiguration von Signalleitungen und Verstärkern
KR101398635B1 (ko) * 2008-11-11 2014-05-22 삼성전자주식회사 센스 앰프를 공유하는 반도체 메모리 장치
US8269203B2 (en) * 2009-07-02 2012-09-18 Actel Corporation Resistive RAM devices for programmable logic devices
EP2372716A1 (fr) 2010-04-02 2011-10-05 S.O.I.Tec Silicon on Insulator Technologies Circuit pseudo-inverseur sur SeOI
FR2958441B1 (fr) * 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi

Also Published As

Publication number Publication date
FR2972838A1 (fr) 2012-09-21
TW201239885A (en) 2012-10-01
CN102682833A (zh) 2012-09-19
KR101334284B1 (ko) 2013-11-29
TWI485704B (zh) 2015-05-21
US20120243360A1 (en) 2012-09-27
CN102682833B (zh) 2014-12-10
EP2500906A1 (fr) 2012-09-19
JP2012198975A (ja) 2012-10-18
US9159400B2 (en) 2015-10-13
KR20120106540A (ko) 2012-09-26
EP2500906B1 (fr) 2014-02-12
SG184623A1 (en) 2012-10-30
JP5524942B2 (ja) 2014-06-18

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Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20130109

PLFP Fee payment

Year of fee payment: 5

ST Notification of lapse

Effective date: 20161130