FR2936358B1 - Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique. - Google Patents
Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique.Info
- Publication number
- FR2936358B1 FR2936358B1 FR0856427A FR0856427A FR2936358B1 FR 2936358 B1 FR2936358 B1 FR 2936358B1 FR 0856427 A FR0856427 A FR 0856427A FR 0856427 A FR0856427 A FR 0856427A FR 2936358 B1 FR2936358 B1 FR 2936358B1
- Authority
- FR
- France
- Prior art keywords
- submillimetric
- electroconductive grid
- manufacturing
- grid
- molding mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000000465 moulding Methods 0.000 title 1
- 230000008569 process Effects 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
- C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
- B05D1/322—Removable films used as masks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
- B05D1/38—Successively applying liquids or other fluent materials, e.g. without intermediate treatment with intermediate treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/34—Masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0856427A FR2936358B1 (fr) | 2008-09-24 | 2008-09-24 | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique. |
JP2011528400A JP2012503851A (ja) | 2008-09-24 | 2009-09-24 | サブミリメートル導電性グリッドのためのサブミリメートルアパチャを有するマスクの製造方法、サブミリメートルアパチャを有するマスク及びサブミリメートル導電性グリッド |
KR1020117009074A KR20110060941A (ko) | 2008-09-24 | 2009-09-24 | 서브밀리미터의 전기 전도성 그리드를 위한 서브밀리미터의 개구를 갖는 마스크의 제조 방법, 서브밀리미터의 개구를 갖는 마스크, 및 서브밀리미터의 전기 전도성 그리드 |
US13/120,265 US9114425B2 (en) | 2008-09-24 | 2009-09-24 | Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, mask having submillimetric apertures and submillimetric electrically conductive grid |
CN200980137638.7A CN102164869B (zh) | 2008-09-24 | 2009-09-24 | 制造用于亚毫米级导电栅格的具有亚毫米级开口的掩模的方法、具有亚毫米级开口的掩模和亚毫米级导电栅格 |
PCT/FR2009/051815 WO2010034944A1 (fr) | 2008-09-24 | 2009-09-24 | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouvertures submillimetriques, grille electroconductrice submillimetrique |
EP09752407A EP2326603A1 (fr) | 2008-09-24 | 2009-09-24 | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouvertures submillimetriques, grille electroconductrice submillimetrique |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0856427A FR2936358B1 (fr) | 2008-09-24 | 2008-09-24 | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2936358A1 FR2936358A1 (fr) | 2010-03-26 |
FR2936358B1 true FR2936358B1 (fr) | 2011-01-21 |
Family
ID=40459749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0856427A Expired - Fee Related FR2936358B1 (fr) | 2008-09-24 | 2008-09-24 | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique. |
Country Status (7)
Country | Link |
---|---|
US (1) | US9114425B2 (fr) |
EP (1) | EP2326603A1 (fr) |
JP (1) | JP2012503851A (fr) |
KR (1) | KR20110060941A (fr) |
CN (1) | CN102164869B (fr) |
FR (1) | FR2936358B1 (fr) |
WO (1) | WO2010034944A1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090129927A (ko) * | 2008-06-13 | 2009-12-17 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
US10412788B2 (en) | 2008-06-13 | 2019-09-10 | Lg Chem, Ltd. | Heating element and manufacturing method thereof |
KR100940437B1 (ko) * | 2008-06-13 | 2010-02-10 | 주식회사 엘지화학 | 발열체 및 이의 제조방법 |
FR2965407A1 (fr) | 2010-09-27 | 2012-03-30 | Saint Gobain | Procédé de connexion(s) électrique(s) d'un dispositif a diode électroluminescente organique encapsule et un tel dispositif oled |
DE102015007238B4 (de) * | 2015-06-05 | 2017-06-22 | Giesecke & Devrient Gmbh | Verfahren zum Herstellen einer optoelektronischen Vorrichtung |
US10597097B2 (en) | 2015-09-07 | 2020-03-24 | Sabic Global Technologies B.V. | Aerodynamic features of plastic glazing of tailgates |
US10690314B2 (en) | 2015-09-07 | 2020-06-23 | Sabic Global Technologies B.V. | Lighting systems of tailgates with plastic glazing |
EP3347220B1 (fr) | 2015-09-07 | 2021-04-14 | SABIC Global Technologies B.V. | Surfaces de vitrage en matière plastique de hayons arrière |
CN108025469B (zh) | 2015-09-07 | 2020-12-25 | 沙特基础工业全球技术公司 | 后栏板的塑料玻璃的成型 |
US10661300B2 (en) * | 2015-11-18 | 2020-05-26 | Lacks Enterprises, Inc. | Method of painting a plastic work piece using an electrostatically isolated mask |
JP6732912B2 (ja) | 2015-11-23 | 2020-07-29 | サビック グローバル テクノロジーズ ビー.ブイ. | プラスチックグレージングを有するウィンドウ用の点灯システム |
CN109301081B (zh) * | 2017-07-25 | 2020-11-27 | 上海视涯技术有限公司 | 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法 |
CN109960692B (zh) * | 2019-03-12 | 2021-03-05 | 中国电子科技集团公司第二十八研究所 | 船舶航向模型的数据可视化方法、设备及计算机存储介质 |
CN113728733A (zh) * | 2019-04-19 | 2021-11-30 | 法国圣-戈班玻璃公司 | 加热格栅设计设备及其方法 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3860424A (en) * | 1971-12-30 | 1975-01-14 | Bell Telephone Labor Inc | Led display |
US4435047A (en) | 1981-09-16 | 1984-03-06 | Manchester R & D Partnership | Encapsulated liquid crystal and method |
JPS60158780A (ja) | 1984-01-27 | 1985-08-20 | Sony Corp | 表示装置 |
US4732456A (en) | 1984-08-28 | 1988-03-22 | Taliq Corporation | Scattering display for contrast enhancement including target |
JPS62229116A (ja) | 1986-01-17 | 1987-10-07 | 日本板硝子株式会社 | 液晶パネル |
US4806922A (en) | 1987-09-23 | 1989-02-21 | Taliq Corporation | Display device utilizing a plurality of NCAP liquid crystal modules |
DE69230189T2 (de) | 1991-02-14 | 2000-02-10 | Asahi Glass Co. Ltd., Tokio/Tokyo | Laminierte Glaskonstruktion |
CA2102199A1 (fr) | 1991-05-02 | 1992-11-03 | William J. Doane | Dispositif et matiere cristallisee, modulateurs de lumiere |
US5280373A (en) | 1991-07-24 | 1994-01-18 | Mitsubishi Kasei Corporation | Light modulating device including a liquid crystal, a polymer and dichroic dyes having maximum absorption in the different wavelength regions |
EP0733931B1 (fr) | 1995-03-22 | 2003-08-27 | Toppan Printing Co., Ltd. | Film conductif multicouche, substrat transparent muni d'électrodes et dispositif d'affichage à cristal liquide qui l'utilisent |
DE19520843A1 (de) | 1995-06-08 | 1996-12-12 | Leybold Ag | Scheibe aus durchscheinendem Werkstoff sowie Verfahren zu ihrer Herstellung |
JPH09283866A (ja) | 1996-04-10 | 1997-10-31 | Nippon Sheet Glass Co Ltd | 透明導電膜付き基板 |
JPH10100303A (ja) | 1996-06-07 | 1998-04-21 | Nippon Sheet Glass Co Ltd | 透明導電膜付き基板およびそれを用いた表示素子 |
JPH1170610A (ja) | 1996-07-26 | 1999-03-16 | Asahi Glass Co Ltd | 透明導電膜、および透明電極の形成方法 |
FR2757151B1 (fr) | 1996-12-12 | 1999-01-08 | Saint Gobain Vitrage | Vitrage comprenant un substrat muni d'un empilement de couches minces pour la protection solaire et/ou l'isolation thermique |
EP0924966A1 (fr) | 1997-06-30 | 1999-06-23 | Aventis Research & Technologies GmbH & Co. KG | Electrode à couche mince pour dispositifs électroluminescentes organiques plains et procédé de fabrication |
DE19733053A1 (de) | 1997-07-31 | 1999-02-04 | Leybold Ag | Transparentes Substrat |
JP2007246913A (ja) * | 1999-02-04 | 2007-09-27 | Mizutani Paint Co Ltd | 水性分散体およびその製造方法並びに塗料組成物 |
JP2000234187A (ja) * | 1999-02-15 | 2000-08-29 | Kawasaki Steel Corp | 表面処理剤および表面処理金属材料 |
JP2001035660A (ja) | 1999-07-16 | 2001-02-09 | Fuji Photo Film Co Ltd | 有機電界発光素子 |
JP3862466B2 (ja) | 2000-02-29 | 2006-12-27 | 三井化学株式会社 | 透明電極 |
JP2002015623A (ja) | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | 透明電極 |
TWI263336B (en) | 2000-06-12 | 2006-10-01 | Semiconductor Energy Lab | Thin film transistors and semiconductor device |
WO2002026488A1 (fr) | 2000-09-29 | 2002-04-04 | Nippon Sheet Glass Co., Ltd. | Stratifié transparent à faible pouvoir émissif |
JP2002313139A (ja) | 2001-04-12 | 2002-10-25 | Mitsui Chemicals Inc | 透明導電性薄膜積層体 |
JP2002313572A (ja) | 2001-04-13 | 2002-10-25 | Toyota Motor Corp | 有機el表示装置 |
US20030049464A1 (en) | 2001-09-04 | 2003-03-13 | Afg Industries, Inc. | Double silver low-emissivity and solar control coatings |
WO2003036657A1 (fr) | 2001-10-19 | 2003-05-01 | Asahi Glass Company, Limited | Substrat a couche d'oxyde conductrice transparente, son procede de production et element de conversion photoelectrique |
US7354327B2 (en) | 2001-12-24 | 2008-04-08 | Saint-Gobain Glass France | Method for making a multilayer element with a transparent surface electrode and an electroluminescent illuminating element |
US6727122B2 (en) | 2001-12-29 | 2004-04-27 | Lg. Philips Lcd Co., Ltd. | Method of fabricating polysilicon thin film transistor |
JP4273702B2 (ja) * | 2002-05-08 | 2009-06-03 | 凸版印刷株式会社 | 導電膜の製造方法 |
US6811815B2 (en) | 2002-06-14 | 2004-11-02 | Avery Dennison Corporation | Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films |
DE60329638D1 (de) | 2002-08-02 | 2009-11-19 | Idemitsu Kosan Co | Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat |
US7049757B2 (en) | 2002-08-05 | 2006-05-23 | General Electric Company | Series connected OLED structure and fabrication method |
FR2843483B1 (fr) | 2002-08-06 | 2005-07-08 | Saint Gobain | Lampe plane, procede de fabrication et application |
US6693296B1 (en) | 2002-08-07 | 2004-02-17 | Eastman Kodak Company | OLED apparatus including a series of OLED devices |
US7034470B2 (en) | 2002-08-07 | 2006-04-25 | Eastman Kodak Company | Serially connecting OLED devices for area illumination |
FR2844136B1 (fr) | 2002-09-03 | 2006-07-28 | Corning Inc | Materiau utilisable dans la fabrication de dispositifs d'affichage lumineux en particulier de diodes electroluminescentes organiques |
EP1403939B1 (fr) | 2002-09-30 | 2006-03-01 | Kabushiki Kaisha Toyota Jidoshokki | Dispositifs d'émission de lumière, d'affichage et d'éclairage |
KR100662297B1 (ko) | 2002-10-18 | 2007-01-02 | 엘지전자 주식회사 | 유기 el 소자 |
JP3988935B2 (ja) * | 2002-11-25 | 2007-10-10 | 富士フイルム株式会社 | 網目状導電体及びその製造方法並びに用途 |
GB0229653D0 (en) | 2002-12-20 | 2003-01-22 | Cambridge Display Tech Ltd | Electrical connection of optoelectronic devices |
US20040149984A1 (en) | 2003-01-31 | 2004-08-05 | Eastman Kodak Company | Color OLED display with improved emission |
KR100527191B1 (ko) | 2003-06-03 | 2005-11-08 | 삼성에스디아이 주식회사 | 저저항 캐소드를 사용하는 유기 전계 발광 소자 |
US7074463B2 (en) * | 2003-09-12 | 2006-07-11 | 3M Innovative Properties Company | Durable optical element |
JP2005116193A (ja) | 2003-10-02 | 2005-04-28 | Toyota Industries Corp | 有機電界発光素子及び当該素子を備えた有機電界発光デバイス |
US7268485B2 (en) | 2003-10-07 | 2007-09-11 | Eastman Kodak Company | White-emitting microcavity OLED device |
KR20050039014A (ko) | 2003-10-23 | 2005-04-29 | 주식회사 엘지화학 | 유기 발광 소자용 전극 및 이를 포함하는 유기 발광 소자 |
JP2005149734A (ja) * | 2003-11-11 | 2005-06-09 | Seiko Epson Corp | 透明導電膜形成用組成物、透明導電膜の形成方法、透明導電膜、電子デバイスおよび電子機器 |
WO2005053053A1 (fr) | 2003-11-26 | 2005-06-09 | Koninklijke Philips Electronics N.V. | Dispositif emetteur de lumiere comportant une couche de protection contre la gravure |
JP2005203336A (ja) | 2003-12-15 | 2005-07-28 | Fuji Photo Film Co Ltd | エレクトロルミネッセンス素子およびエレクトロルミネッセンス発光粒子 |
JP2005259820A (ja) | 2004-03-09 | 2005-09-22 | Sharp Corp | Iii−v族化合物半導体発光素子とその製造方法 |
DE102004025578B4 (de) | 2004-05-25 | 2009-04-23 | Applied Materials Gmbh & Co. Kg | Verfahren zum Herstellen von organischen, Licht emittierenden Flächenelementen und Verwendung dieses Verfahrens |
GB2447637B (en) | 2004-08-04 | 2009-11-18 | Cambridge Display Tech Ltd | Organic Electroluminescent Device |
TWI237525B (en) | 2004-08-30 | 2005-08-01 | Au Optronics Corp | Electro-luminescence display device and method for forming the same |
KR100673744B1 (ko) | 2004-10-28 | 2007-01-24 | 삼성에스디아이 주식회사 | 다층 구조 애노드 |
KR100700642B1 (ko) | 2004-12-13 | 2007-03-27 | 삼성에스디아이 주식회사 | 유기전계발광표시소자 및 그 제조방법 |
DE202005000979U1 (de) | 2005-01-20 | 2006-06-01 | Schott Ag | Elektro-optisches Element mit gesteuerter, insbesondere uniformer Funktionalitätsverteilung |
FR2882489B1 (fr) | 2005-02-22 | 2007-03-30 | Saint Gobain | Structure lumineuse plane ou sensiblement plane |
US20060209551A1 (en) | 2005-03-18 | 2006-09-21 | Robert Schwenke | Light emissive plastic glazing |
EP1717876A1 (fr) | 2005-04-27 | 2006-11-02 | C.S.E.M. Centre Suisse D'electronique Et De Microtechnique Sa | Interconnexion dans des diodes électroluminescents polymériques ou détecteurs de lumière polymériques ou cellules solaires |
KR101152127B1 (ko) | 2005-05-27 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 배선, 이를 포함하는 박막 트랜지스터 표시판및 그 제조 방법 |
KR101140241B1 (ko) | 2005-06-27 | 2012-04-26 | 엘지디스플레이 주식회사 | 얼라인 마크를 포함한 액정표시소자 |
FR2889886A1 (fr) | 2005-08-19 | 2007-02-23 | Saint Gobain | Lampe uv plane a decharge coplanaire et utilisations |
FR2890232A1 (fr) | 2005-08-23 | 2007-03-02 | Saint Gobain | Lampe plane a decharge coplanaire et utilisations |
WO2007096565A2 (fr) | 2006-02-22 | 2007-08-30 | Saint-Gobain Glass France | Dispositif electroluminescent organique et utilisation d'une couche electroconductrice transparente dans un dispositif electroluminescent organique |
EP2426552A1 (fr) | 2006-03-03 | 2012-03-07 | Gentex Corporation | Éléments électro-optiques incorporant des revêtements améliorés à couche mince |
FR2905032A1 (fr) | 2006-08-21 | 2008-02-22 | Saint Gobain | Structure lumineuse et/ou uv sensiblement plane |
WO2008029060A2 (fr) | 2006-09-07 | 2008-03-13 | Saint-Gobain Glass France | Substrat pour dispositif electroluminescent organique, utilisation et procede de fabrication de ce substrat, ainsi que dispositif electroluminescent organique. |
US20080100202A1 (en) | 2006-11-01 | 2008-05-01 | Cok Ronald S | Process for forming oled conductive protective layer |
US9099673B2 (en) | 2006-11-17 | 2015-08-04 | Saint-Gobain Glass France | Electrode for an organic light-emitting device, acid etching thereof and also organic light-emitting device incorporating it |
FR2913146B1 (fr) | 2007-02-23 | 2009-05-01 | Saint Gobain | Electrode discontinue, dispositif electroluminescent organique l'incorporant, et leurs fabrications |
-
2008
- 2008-09-24 FR FR0856427A patent/FR2936358B1/fr not_active Expired - Fee Related
-
2009
- 2009-09-24 JP JP2011528400A patent/JP2012503851A/ja active Pending
- 2009-09-24 KR KR1020117009074A patent/KR20110060941A/ko active IP Right Grant
- 2009-09-24 CN CN200980137638.7A patent/CN102164869B/zh not_active Expired - Fee Related
- 2009-09-24 US US13/120,265 patent/US9114425B2/en not_active Expired - Fee Related
- 2009-09-24 EP EP09752407A patent/EP2326603A1/fr not_active Withdrawn
- 2009-09-24 WO PCT/FR2009/051815 patent/WO2010034944A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20110240343A1 (en) | 2011-10-06 |
CN102164869B (zh) | 2014-12-31 |
KR20110060941A (ko) | 2011-06-08 |
WO2010034944A1 (fr) | 2010-04-01 |
US9114425B2 (en) | 2015-08-25 |
EP2326603A1 (fr) | 2011-06-01 |
FR2936358A1 (fr) | 2010-03-26 |
JP2012503851A (ja) | 2012-02-09 |
CN102164869A (zh) | 2011-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2936358B1 (fr) | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque a ouverture submillimetriques, grille electroconductrice submillimetrique. | |
FR2936360B1 (fr) | Procede de fabrication d'un masque a ouvertures submillimetriques pour grille electroconductrice submillimetrique, masque et grille electroconductrice submillimetrique. | |
FR2913972B1 (fr) | Procede de fabrication d'un masque pour la realisation d'une grille | |
FR2927270B1 (fr) | Procede de fabrication d'aubes a solidification dirigee | |
FR2936361B1 (fr) | Procede de fabrication d'une grille submillimetrique electroconductrice, grille submillimetrique electroconductrice | |
FR2940172B1 (fr) | Procede de fabrication d'une aube de turbomachine | |
FR2902785B1 (fr) | Procede de fabrication de 1,2-dichloroethane | |
FR2933884B1 (fr) | Procede de fabrication d'une piece d'aubage. | |
FR2902787B1 (fr) | Procede de fabrication de 1,2-dichloroethane | |
DE602006020166D1 (de) | Werkzeug für ein rtm-verfahren (rtm - resin transfer moulding) | |
FR2946653B1 (fr) | Procede de fabrication d'une composition melange-maitre comprenant un peroxyde organique | |
FR2935357B1 (fr) | Procede de fabrication d'un element de nacelle | |
FR2902784B1 (fr) | Procede de fabrication de 1,2-dichloroethane | |
FR2893269B1 (fr) | Procede de fabrication d'une piece formee en tole. | |
FR2945551B1 (fr) | Procede de fabrication d'un element de securite pour document de securite. | |
FR2953755B1 (fr) | Procede de fabrication d'articles composite a base de polyamide | |
FR2923730B1 (fr) | Procede de fabrication de nanoparticules metalliques enrobees de silice. | |
FR2918680B1 (fr) | Procede de fabrication d'un materiau en feuille. | |
FR2915924B1 (fr) | Procede de fabrication d'une piece structurelle hybride | |
FR2947571B1 (fr) | Procede de restauration d'un element en cuivre | |
FR2926925B1 (fr) | Procede de fabrication d'heterostructures | |
FR2924378B1 (fr) | Procede de fabrication par moulage d'une piece composite thermoplastique. | |
FR2914110B1 (fr) | Procede de fabrication d'un substrat hybride | |
FR2982734B1 (fr) | Procede de fabrication d'un fer a cheval | |
FR2929134B1 (fr) | Procede de fabrication d'un garnissage ondule-croise |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 8 |
|
ST | Notification of lapse |
Effective date: 20170531 |