[go: up one dir, main page]

FR2878913B1 - Controle des pressions partielles de gaz pour optimisation de procede - Google Patents

Controle des pressions partielles de gaz pour optimisation de procede

Info

Publication number
FR2878913B1
FR2878913B1 FR0452853A FR0452853A FR2878913B1 FR 2878913 B1 FR2878913 B1 FR 2878913B1 FR 0452853 A FR0452853 A FR 0452853A FR 0452853 A FR0452853 A FR 0452853A FR 2878913 B1 FR2878913 B1 FR 2878913B1
Authority
FR
France
Prior art keywords
control
gas pressures
process optimization
partial gas
set point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0452853A
Other languages
English (en)
Other versions
FR2878913A1 (fr
Inventor
Jean Pierre Desbiolles
Michel Puech
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0452853A priority Critical patent/FR2878913B1/fr
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to DE200560004640 priority patent/DE602005004640T2/de
Priority to AT05300948T priority patent/ATE385545T1/de
Priority to PCT/FR2005/050966 priority patent/WO2006059027A1/fr
Priority to EP20050300948 priority patent/EP1669609B1/fr
Priority to US11/291,962 priority patent/US7793685B2/en
Publication of FR2878913A1 publication Critical patent/FR2878913A1/fr
Application granted granted Critical
Publication of FR2878913B1 publication Critical patent/FR2878913B1/fr
Priority to US12/804,967 priority patent/US8297311B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D27/00—Control, e.g. regulation, of pumps, pumping installations or pumping systems specially adapted for elastic fluids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D19/00—Axial-flow pumps
    • F04D19/02—Multi-stage pumps
    • F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/85986—Pumped fluid control
    • Y10T137/86002—Fluid pressure responsive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86131—Plural
    • Y10T137/86139—Serial
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87917—Flow path with serial valves and/or closures

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
  • Flow Control (AREA)
  • Inorganic Insulating Materials (AREA)
  • Applications Or Details Of Rotary Compressors (AREA)
FR0452853A 2004-12-03 2004-12-03 Controle des pressions partielles de gaz pour optimisation de procede Expired - Fee Related FR2878913B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0452853A FR2878913B1 (fr) 2004-12-03 2004-12-03 Controle des pressions partielles de gaz pour optimisation de procede
AT05300948T ATE385545T1 (de) 2004-12-03 2005-11-18 Partialdruckregelung von gas zur optimierung eines verfahrens
PCT/FR2005/050966 WO2006059027A1 (fr) 2004-12-03 2005-11-18 Controle des pressions partielles de gaz pour optimisation de procede
EP20050300948 EP1669609B1 (fr) 2004-12-03 2005-11-18 Contrôle des pressions partielles de gaz pour optimisation de procédé
DE200560004640 DE602005004640T2 (de) 2004-12-03 2005-11-18 Partialdruckregelung von Gas zur Optimierung eines Verfahrens
US11/291,962 US7793685B2 (en) 2004-12-03 2005-12-02 Controlling gas partial pressures for process optimization
US12/804,967 US8297311B2 (en) 2004-12-03 2010-08-03 Controlling gas partial pressures for process optimization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0452853A FR2878913B1 (fr) 2004-12-03 2004-12-03 Controle des pressions partielles de gaz pour optimisation de procede

Publications (2)

Publication Number Publication Date
FR2878913A1 FR2878913A1 (fr) 2006-06-09
FR2878913B1 true FR2878913B1 (fr) 2007-01-19

Family

ID=34952720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0452853A Expired - Fee Related FR2878913B1 (fr) 2004-12-03 2004-12-03 Controle des pressions partielles de gaz pour optimisation de procede

Country Status (6)

Country Link
US (2) US7793685B2 (fr)
EP (1) EP1669609B1 (fr)
AT (1) ATE385545T1 (fr)
DE (1) DE602005004640T2 (fr)
FR (1) FR2878913B1 (fr)
WO (1) WO2006059027A1 (fr)

Families Citing this family (124)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2878913B1 (fr) * 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
US7438534B2 (en) * 2005-10-07 2008-10-21 Edwards Vacuum, Inc. Wide range pressure control using turbo pump
JP5372353B2 (ja) * 2007-09-25 2013-12-18 株式会社フジキン 半導体製造装置用ガス供給装置
US8042566B2 (en) 2008-07-23 2011-10-25 Atmel Corporation Ex-situ component recovery
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
EP2458218A1 (fr) * 2010-11-30 2012-05-30 Converteam Technology Ltd Système de maintenance d'un vide poussé
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9002465B2 (en) * 2012-04-06 2015-04-07 Boston Scientific Neuromodulation Corporation Verifying correct operation of an implantable neurostimulator device using current distribution circuitry
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9099286B2 (en) 2012-12-31 2015-08-04 908 Devices Inc. Compact mass spectrometer
US8525111B1 (en) 2012-12-31 2013-09-03 908 Devices Inc. High pressure mass spectrometry systems and methods
US9093253B2 (en) * 2012-12-31 2015-07-28 908 Devices Inc. High pressure mass spectrometry systems and methods
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US20140311581A1 (en) * 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
CN103277284B (zh) * 2013-06-21 2016-06-22 苏州盟通利机电设备有限公司 全自动真空抽气装置及其控制方法
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
WO2015108969A1 (fr) 2014-01-14 2015-07-23 908 Devices Inc. Collecte d'échantillons dans des systèmes compacts de spectrométrie de masse
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US8816272B1 (en) 2014-05-02 2014-08-26 908 Devices Inc. High pressure mass spectrometry systems and methods
US8921774B1 (en) 2014-05-02 2014-12-30 908 Devices Inc. High pressure mass spectrometry systems and methods
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
GB2579360A (en) 2018-11-28 2020-06-24 Edwards Ltd Multiple chamber vacuum exhaust system
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
FR3112086B1 (fr) * 2020-07-09 2022-07-08 Pfeiffer Vacuum Dispositif de traitement des gaz et ligne de vide
FR3112177B1 (fr) * 2020-07-09 2022-07-08 Pfeiffer Vacuum Ligne de vide et procédé de contrôle d’une ligne de vide
DE102022100843A1 (de) 2022-01-14 2023-07-20 VON ARDENNE Asset GmbH & Co. KG Verfahren, Steuervorrichtung, Speichermedium und Vakuumanordnung
US20230352275A1 (en) * 2022-04-29 2023-11-02 Semes Co., Ltd. Apparatus and method for processing substrate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529860A (en) * 1982-08-02 1985-07-16 Motorola, Inc. Plasma etching of organic materials
US4699570A (en) * 1986-03-07 1987-10-13 Itt Industries, Inc Vacuum pump system
US5108983A (en) * 1989-11-21 1992-04-28 Georgia Tech Research Corporation Method for the rapid deposition with low vapor pressure reactants by chemical vapor deposition
JP3847357B2 (ja) * 1994-06-28 2006-11-22 株式会社荏原製作所 真空系の排気装置
US5628364A (en) * 1995-12-04 1997-05-13 Terrane Remediation, Inc. Control system for governing in-situ removal of subterranean hydrocarbon-based fluids
US5944049A (en) * 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
US5979225A (en) * 1997-08-26 1999-11-09 Applied Materials, Inc. Diagnosis process of vacuum failure in a vacuum chamber
JP3929185B2 (ja) * 1998-05-20 2007-06-13 株式会社荏原製作所 真空排気装置及び方法
FR2786566B1 (fr) * 1998-11-26 2000-12-29 Cit Alcatel Procede et dispositif de detection de fuites sur echangeurs automobiles
DE10043783A1 (de) * 2000-09-06 2002-03-14 Leybold Vakuum Gmbh Verfahren und Vorrichtung zur Regelung des Vakuums in einer Kammer
JP4335469B2 (ja) * 2001-03-22 2009-09-30 株式会社荏原製作所 真空排気装置のガス循環量調整方法及び装置
FR2854667B1 (fr) * 2003-05-09 2006-07-28 Cit Alcatel Controle de pression dans la chambre de procedes par variation de vitesse de pompes, vanne de regulation et injection de gaz neutre
US20070028669A1 (en) * 2003-09-26 2007-02-08 Brewster Barrie D Detection of contaminants within fluid pumped by a vacuum pump
US7253107B2 (en) * 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
FR2878913B1 (fr) * 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede

Also Published As

Publication number Publication date
EP1669609A1 (fr) 2006-06-14
US20060118178A1 (en) 2006-06-08
ATE385545T1 (de) 2008-02-15
US8297311B2 (en) 2012-10-30
EP1669609B1 (fr) 2008-02-06
FR2878913A1 (fr) 2006-06-09
WO2006059027A1 (fr) 2006-06-08
US7793685B2 (en) 2010-09-14
DE602005004640T2 (de) 2009-01-29
US20110005607A1 (en) 2011-01-13
DE602005004640D1 (de) 2008-03-20

Similar Documents

Publication Publication Date Title
FR2878913B1 (fr) Controle des pressions partielles de gaz pour optimisation de procede
TW200730731A (en) Wide range pressure control using turbo pump
ATE324524T1 (de) Verfahren zur regulierung des pumpens eines turbokompressors
EP1382910A3 (fr) Dispositif de commande pour brûleur à gaz
DE60143256D1 (de) Elektronischer gasregler mit hohem durchfluss
AU2002222323A1 (en) Method, computer program prodcut and use of a computer program for stabilizing a multiphase flow
MX2019006698A (es) Sistema de refrigeracion de co2 con optimizacion de control automatizado.
DE602004024206D1 (de) Regelung von überkritischem druck für dampfverdichtungssystem
WO2004008008A3 (fr) Commande d'un environnement gazeux dans une chambre de chargement de tranches
TW200746294A (en) Processing apparatus and processing method
RU2013142812A (ru) Способ регулирования давления газообразного топлива в двигателе
TW200636856A (en) Semiconductor processing apparatus and method
ATE397678T1 (de) Einrichtung zum reaktiven sputtern
WO2002095788A3 (fr) Commande de pression compacte independante et isolation sous vide pour chambre de reaction plasmatique a pompe turbomoleculaire
TW200700950A (en) A method and apparatus for process control in time division multiplexed (tdm) etch processes
RU2007115557A (ru) Способ получения и применения инертной технологической газовой среды
CN2806924Y (zh) 锥阀式先导型超高压气动比例减压阀
RU2324065C2 (ru) Система регулирования подачи топлива в газотурбинный двигатель
DE602005012050D1 (de) Drucksteuerverfahren
DK1594765T3 (da) System til at påføre et arbejdstryk på et indhold i en vacuumpakning ved hjælp af en drivgas
RU2019101500A (ru) Способ и устройство для получения воздушных газов путем криогенного разделения воздуха с помощью изменяемых выхода сжиженных продуктов и потребления электроэнергии
FR2864579B1 (fr) Moteur a combustion interne avec suralimentation pilotee et procede de pilotage de la suralimentation
EP1382908A3 (fr) Dispositif de commande de débit d'un gaz
DE502004000564D1 (de) Vorrichtung zur Steuerung einer Gasströmung
FR2866754B1 (fr) Procede de regulation de la pression d'un gaz d'echappement d'une pile a combustible de maniere a reguler l'aptitude a la condensation de ce gaz

Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse

Effective date: 20100831