FR2815472B1 - Diac planar - Google Patents
Diac planarInfo
- Publication number
- FR2815472B1 FR2815472B1 FR0013180A FR0013180A FR2815472B1 FR 2815472 B1 FR2815472 B1 FR 2815472B1 FR 0013180 A FR0013180 A FR 0013180A FR 0013180 A FR0013180 A FR 0013180A FR 2815472 B1 FR2815472 B1 FR 2815472B1
- Authority
- FR
- France
- Prior art keywords
- diac
- planar
- diac planar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013180A FR2815472B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar |
CNB018172679A CN1220275C (zh) | 2000-10-13 | 2001-10-12 | 平面双端开关 |
US10/398,419 US7321138B2 (en) | 2000-10-13 | 2001-10-12 | Planar diac |
PCT/FR2001/003179 WO2002031889A1 (fr) | 2000-10-13 | 2001-10-12 | Diac planar |
EP01976431A EP1328980A1 (fr) | 2000-10-13 | 2001-10-12 | Diac planar |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013180A FR2815472B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2815472A1 FR2815472A1 (fr) | 2002-04-19 |
FR2815472B1 true FR2815472B1 (fr) | 2003-03-21 |
Family
ID=8855350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0013180A Expired - Fee Related FR2815472B1 (fr) | 2000-10-13 | 2000-10-13 | Diac planar |
Country Status (5)
Country | Link |
---|---|
US (1) | US7321138B2 (fr) |
EP (1) | EP1328980A1 (fr) |
CN (1) | CN1220275C (fr) |
FR (1) | FR2815472B1 (fr) |
WO (1) | WO2002031889A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7037814B1 (en) * | 2003-10-10 | 2006-05-02 | National Semiconductor Corporation | Single mask control of doping levels |
WO2006100657A1 (fr) * | 2005-03-22 | 2006-09-28 | University College Cork - National University Of Ireland, Cork | Structure de diode |
JP2008172165A (ja) * | 2007-01-15 | 2008-07-24 | Toshiba Corp | 半導体装置 |
US8399995B2 (en) * | 2009-01-16 | 2013-03-19 | Infineon Technologies Ag | Semiconductor device including single circuit element for soldering |
US8753156B2 (en) * | 2009-02-12 | 2014-06-17 | Hobie Cat Company | Remote drive |
FR2960097A1 (fr) * | 2010-05-11 | 2011-11-18 | St Microelectronics Tours Sas | Composant de protection bidirectionnel |
CN102244079B (zh) * | 2011-07-28 | 2013-08-21 | 江苏捷捷微电子股份有限公司 | 台面工艺功率晶体管芯片结构和实施方法 |
US8530902B2 (en) | 2011-10-26 | 2013-09-10 | General Electric Company | System for transient voltage suppressors |
CN109599332A (zh) * | 2018-12-27 | 2019-04-09 | 朝阳无线电元件有限责任公司 | 一种低伏电压调整二极管制造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615929A (en) * | 1965-07-08 | 1971-10-26 | Texas Instruments Inc | Method of forming epitaxial region of predetermined thickness and article of manufacture |
DE2625710A1 (de) * | 1976-06-09 | 1977-12-15 | Standard Elektrik Lorenz Ag | Diodenmatrix |
US4267527A (en) * | 1979-05-11 | 1981-05-12 | Rca Corporation | Relaxation oscillator |
JPS5691478A (en) * | 1979-12-26 | 1981-07-24 | Hitachi Ltd | Manufacture of punch-through type diode |
JPH07120788B2 (ja) * | 1986-07-16 | 1995-12-20 | 関西日本電気株式会社 | プレ−ナ型半導体装置 |
US4847671A (en) * | 1987-05-19 | 1989-07-11 | General Electric Company | Monolithically integrated insulated gate semiconductor device |
US4967256A (en) * | 1988-07-08 | 1990-10-30 | Texas Instruments Incorporated | Overvoltage protector |
GB9417393D0 (en) * | 1994-08-30 | 1994-10-19 | Texas Instruments Ltd | A four-region (pnpn) semiconductor device |
US5880511A (en) * | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
JP3564898B2 (ja) * | 1996-10-25 | 2004-09-15 | 株式会社デンソー | 半導体装置 |
DE69842052D1 (de) * | 1997-10-30 | 2011-01-27 | Sumitomo Electric Industries | Gan einkristall-substrat und herstellungsmethode |
-
2000
- 2000-10-13 FR FR0013180A patent/FR2815472B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-12 CN CNB018172679A patent/CN1220275C/zh not_active Expired - Fee Related
- 2001-10-12 WO PCT/FR2001/003179 patent/WO2002031889A1/fr active Application Filing
- 2001-10-12 EP EP01976431A patent/EP1328980A1/fr not_active Withdrawn
- 2001-10-12 US US10/398,419 patent/US7321138B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1220275C (zh) | 2005-09-21 |
EP1328980A1 (fr) | 2003-07-23 |
US7321138B2 (en) | 2008-01-22 |
US20040012034A1 (en) | 2004-01-22 |
FR2815472A1 (fr) | 2002-04-19 |
CN1470077A (zh) | 2004-01-21 |
WO2002031889A1 (fr) | 2002-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070629 |