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FR2758914B1 - Dispositif a semiconducteur optique comportant un reseau de diffraction et son procede de fabrication - Google Patents

Dispositif a semiconducteur optique comportant un reseau de diffraction et son procede de fabrication

Info

Publication number
FR2758914B1
FR2758914B1 FR9711631A FR9711631A FR2758914B1 FR 2758914 B1 FR2758914 B1 FR 2758914B1 FR 9711631 A FR9711631 A FR 9711631A FR 9711631 A FR9711631 A FR 9711631A FR 2758914 B1 FR2758914 B1 FR 2758914B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
same
optical semiconductor
diffraction array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9711631A
Other languages
English (en)
Other versions
FR2758914A1 (fr
Inventor
Manabu Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2758914A1 publication Critical patent/FR2758914A1/fr
Application granted granted Critical
Publication of FR2758914B1 publication Critical patent/FR2758914B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12107—Grating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
FR9711631A 1997-01-27 1997-09-18 Dispositif a semiconducteur optique comportant un reseau de diffraction et son procede de fabrication Expired - Fee Related FR2758914B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01269297A JP3792331B2 (ja) 1997-01-27 1997-01-27 光半導体装置の製造方法、回折格子の形成方法

Publications (2)

Publication Number Publication Date
FR2758914A1 FR2758914A1 (fr) 1998-07-31
FR2758914B1 true FR2758914B1 (fr) 2005-07-15

Family

ID=11812439

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9711631A Expired - Fee Related FR2758914B1 (fr) 1997-01-27 1997-09-18 Dispositif a semiconducteur optique comportant un reseau de diffraction et son procede de fabrication

Country Status (3)

Country Link
US (2) US5981307A (fr)
JP (1) JP3792331B2 (fr)
FR (1) FR2758914B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970578B2 (ja) * 1997-03-17 1999-11-02 日本電気株式会社 分布帰還型半導体レーザ
JP3977920B2 (ja) * 1998-05-13 2007-09-19 富士通株式会社 半導体装置の製造方法
KR100424774B1 (ko) * 1998-07-22 2004-05-17 삼성전자주식회사 선택영역회절격자형성과선택영역성장을위한마스크및이를이용한반도체소자의제조방법
US6271526B1 (en) * 1998-10-15 2001-08-07 California Institute Of Technology Efficient radiation coupling to quantum-well radiation-sensing array via evanescent waves
JP2003023209A (ja) * 2001-07-06 2003-01-24 Furukawa Electric Co Ltd:The 半導体素子の製造方法および半導体素子
US6903379B2 (en) 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
JP3944405B2 (ja) * 2002-03-19 2007-07-11 独立行政法人科学技術振興機構 可変波長固体色素レーザー装置
US6975465B1 (en) * 2002-04-03 2005-12-13 University Of Central Florida Research Foundation, Inc. Method and apparatus for use of beam control prisms with diode laser arrays
EP1509975A4 (fr) * 2002-05-31 2005-06-15 Applied Optoelectronics Inc Laser dbr monomode avec section de dephasage amelioree, et son procede de fabrication
DE202004010922U1 (de) * 2004-07-12 2005-11-24 Leica Geosystems Ag Neigungssensor
DE102004053137A1 (de) * 2004-10-29 2006-05-11 Raab, Volker, Dr. Multispektraler Laser mit mehreren Gainelementen
KR100623027B1 (ko) 2005-02-28 2006-09-14 엘지전자 주식회사 그래이팅 패턴 및 그 제조 방법
WO2019163274A1 (fr) * 2018-02-26 2019-08-29 パナソニック株式会社 Élément électroluminescent à semi-conducteur
CN111162454B (zh) * 2020-01-02 2021-03-12 中国科学院半导体研究所 一种宽波段调谐系统及调谐方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017976A (ja) * 1983-07-11 1985-01-29 Fujitsu Ltd 半導体発光装置の製造方法
JPS61279191A (ja) * 1985-06-04 1986-12-09 Mitsubishi Electric Corp 半導体レ−ザ
JP2552504B2 (ja) * 1987-10-12 1996-11-13 シャープ株式会社 半導体レーザアレイ装置
JP2624310B2 (ja) * 1988-09-28 1997-06-25 キヤノン株式会社 多波長半導体レーザ装置
JPH0697600A (ja) * 1992-09-10 1994-04-08 Mitsubishi Electric Corp 回折格子の形成方法
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置

Also Published As

Publication number Publication date
JPH10209575A (ja) 1998-08-07
JP3792331B2 (ja) 2006-07-05
FR2758914A1 (fr) 1998-07-31
US6088377A (en) 2000-07-11
US5981307A (en) 1999-11-09

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Legal Events

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ST Notification of lapse

Effective date: 20140530