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FR2714200B1 - Dispositif à onde acoustique de surface et son procédé de fabrication. - Google Patents

Dispositif à onde acoustique de surface et son procédé de fabrication.

Info

Publication number
FR2714200B1
FR2714200B1 FR9410078A FR9410078A FR2714200B1 FR 2714200 B1 FR2714200 B1 FR 2714200B1 FR 9410078 A FR9410078 A FR 9410078A FR 9410078 A FR9410078 A FR 9410078A FR 2714200 B1 FR2714200 B1 FR 2714200B1
Authority
FR
France
Prior art keywords
manufacturing process
acoustic wave
surface acoustic
wave device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9410078A
Other languages
English (en)
Other versions
FR2714200A1 (fr
Inventor
Tokihiro Nishihara
Takashi Matsuda
Hidema Uchishiba
Osamu Ikata
Yoshio Satoh
Kazunari Komenou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32031493A external-priority patent/JPH06303073A/ja
Priority claimed from JP15022894A external-priority patent/JPH07202631A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2714200A1 publication Critical patent/FR2714200A1/fr
Application granted granted Critical
Publication of FR2714200B1 publication Critical patent/FR2714200B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02984—Protection measures against damaging
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
FR9410078A 1993-11-25 1994-08-17 Dispositif à onde acoustique de surface et son procédé de fabrication. Expired - Fee Related FR2714200B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP29520293 1993-11-25
JP32031493A JPH06303073A (ja) 1993-02-17 1993-12-20 弾性表面波デバイスとその製造方法
JP15022894A JPH07202631A (ja) 1993-11-25 1994-06-30 弾性表面波装置及びその製造方法

Publications (2)

Publication Number Publication Date
FR2714200A1 FR2714200A1 (fr) 1995-06-23
FR2714200B1 true FR2714200B1 (fr) 1996-12-27

Family

ID=27319889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9410078A Expired - Fee Related FR2714200B1 (fr) 1993-11-25 1994-08-17 Dispositif à onde acoustique de surface et son procédé de fabrication.

Country Status (2)

Country Link
US (2) US5796205A (fr)
FR (1) FR2714200B1 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1108661C (zh) * 1997-07-18 2003-05-14 东芝株式会社 弹性表面波滤波器
JPH11251871A (ja) * 1998-03-06 1999-09-17 Oki Electric Ind Co Ltd 弾性表面波分波器の受信用フィルタ
JP3339450B2 (ja) * 1999-03-02 2002-10-28 株式会社村田製作所 表面波装置の製造方法
JP3498204B2 (ja) * 1999-03-10 2004-02-16 株式会社村田製作所 弾性表面波フィルタ、それを用いた通信機装置
JP2000295071A (ja) * 1999-04-07 2000-10-20 Murata Mfg Co Ltd 端面反射型表面波装置
US6437662B1 (en) 1999-08-11 2002-08-20 Murata Manufacturing Co., Ltd. Surface acoustic wave filter, duplexer and communication apparatus with combined substrate and number of finger pairs reducing pass band ripples
EP1089431A3 (fr) * 1999-09-30 2003-12-10 Matsushita Electric Industrial Co., Ltd. Dispositif à ondes acoustiques de surface et procédé de fabrication du même
US6625855B1 (en) * 1999-10-06 2003-09-30 Murata Manufacturing Co., Ltd. Method for producing surface acoustic wave device
JP2001267355A (ja) * 2000-03-17 2001-09-28 Murata Mfg Co Ltd ワイヤボンディング方法およびこのワイヤボンディング方法を用いた弾性表面波装置
JP3414384B2 (ja) * 2001-01-12 2003-06-09 株式会社村田製作所 弾性表面波フィルタ、およびそれを用いた通信機装置
JP3719653B2 (ja) * 2001-03-12 2005-11-24 淳一 櫛引 音速測定による材料評価方法
US6798318B1 (en) 2001-04-27 2004-09-28 Sawtek, Inc. Hybrid leaky surface acoustic wave resonator filter
US6861927B1 (en) * 2001-04-27 2005-03-01 Sawtek, Inc. Longitudinally coupled leaky surface acoustic wave resonator filter
AU2003303406A1 (en) * 2002-12-24 2004-07-22 Fondation Cafi Ion beam doped lithium tantalate or similar compounds
USH2212H1 (en) * 2003-09-26 2008-04-01 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for producing an ion-ion plasma continuous in time
JP4031764B2 (ja) * 2004-03-09 2008-01-09 Ｔｄｋ株式会社 弾性表面波素子、弾性表面波装置、デュプレクサ及び弾性表面波素子の製造方法
JP2006033791A (ja) * 2004-06-15 2006-02-02 Seiko Epson Corp 弾性表面波素子の製造方法およびその製造方法を用いて製造した弾性表面波素子
JP5429200B2 (ja) * 2010-05-17 2014-02-26 株式会社村田製作所 複合圧電基板の製造方法および圧電デバイス
JP5637068B2 (ja) * 2010-08-27 2014-12-10 株式会社村田製作所 弾性境界波装置の製造方法および弾性境界波装置
CN102223425A (zh) * 2011-05-30 2011-10-19 南通万德电子工业有限公司 离子注入技术在手机部件上的应用及其手机部件
US9337799B2 (en) * 2012-11-02 2016-05-10 Qualcomm Mems Technologies, Inc. Selective tuning of acoustic devices
TWI566446B (zh) 2013-11-20 2017-01-11 財團法人工業技術研究院 表面彈性波產生裝置、收發裝置及其產生方法
WO2017038679A1 (fr) * 2015-08-31 2017-03-09 京セラ株式会社 Élément à onde acoustique de surface
JP6822613B2 (ja) * 2018-12-28 2021-01-27 株式会社村田製作所 フィルタ装置およびマルチプレクサ
KR102319996B1 (ko) * 2020-01-03 2021-11-01 (주)와이솔 표면탄성파 소자 및 표면탄성파 소자의 제조방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3568079A (en) * 1969-04-24 1971-03-02 Us Navy Acoustic signal amplifier
US3760299A (en) * 1971-08-09 1973-09-18 Hazeltine Corp Acoustic surface wave-apparatus having dielectric material separating transducer from acoustic medium
JPS5216146A (en) * 1975-07-29 1977-02-07 Toshiba Corp Elastic surface wave device
FR2346899A1 (fr) * 1976-03-30 1977-10-28 Thomson Csf Procede de modification de l'influence de la temperature sur le temps de propagation des ondes elastiques de surface et dispositif obtenu par ledit procede
US4060777A (en) * 1976-05-19 1977-11-29 Piezo Technology Inc. Guided elastic surface wave filter
US4353046A (en) * 1980-11-04 1982-10-05 R F Monolithics, Inc. Surface acoustic wave device with reflectors
US4597824A (en) * 1983-11-11 1986-07-01 Kabushiki Kaisha Toshiba Method of producing semiconductor device
US4499393A (en) * 1984-02-15 1985-02-12 Trw Inc. Surface acoustic wave spectrum analyzer
JPS61148926A (ja) * 1984-12-24 1986-07-07 Kokusai Denshin Denwa Co Ltd <Kdd> 通信衛星中継器
JPS6264113A (ja) * 1985-09-13 1987-03-23 Clarion Co Ltd 弾性表面波装置
DE3650287T2 (de) * 1985-09-24 1995-08-10 Toshiba Kawasaki Kk Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil.
JPS63169806A (ja) * 1987-01-08 1988-07-13 Murata Mfg Co Ltd 表面波素子
JPH01260911A (ja) * 1988-04-11 1989-10-18 Hitachi Ltd 弾性表面波共振器複合形フィルタ
JPH02272817A (ja) * 1989-04-14 1990-11-07 Hitachi Ltd 弾性表面波装置、その製造方法、及びそれを用いた通信装置
JPH03155661A (ja) * 1989-08-02 1991-07-03 Nec Corp Ｃｍｏｓトランジスタのｎウェルの製造方法
US5217912A (en) * 1990-07-03 1993-06-08 Sharp Kabushiki Kaisha Method for manufacturing a semiconductor device
JP3012673B2 (ja) * 1990-08-21 2000-02-28 三菱電機株式会社 半導体装置の製造方法
JPH0590893A (ja) * 1991-09-26 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
JP3225495B2 (ja) * 1992-02-21 2001-11-05 住友電気工業株式会社 表面弾性波素子及びその製造方法
JP3211394B2 (ja) * 1992-08-13 2001-09-25 ソニー株式会社 半導体装置の製造方法
JPH06112764A (ja) * 1992-09-30 1994-04-22 Hitachi Ltd 弾性境界波装置
US5576589A (en) * 1994-10-13 1996-11-19 Kobe Steel Usa, Inc. Diamond surface acoustic wave devices

Also Published As

Publication number Publication date
US6131257A (en) 2000-10-17
FR2714200A1 (fr) 1995-06-23
US5796205A (en) 1998-08-18

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20110502