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FR2702882B1 - Procédé de fabrication de transistors à couches minces étagés directs. - Google Patents

Procédé de fabrication de transistors à couches minces étagés directs.

Info

Publication number
FR2702882B1
FR2702882B1 FR9303012A FR9303012A FR2702882B1 FR 2702882 B1 FR2702882 B1 FR 2702882B1 FR 9303012 A FR9303012 A FR 9303012A FR 9303012 A FR9303012 A FR 9303012A FR 2702882 B1 FR2702882 B1 FR 2702882B1
Authority
FR
France
Prior art keywords
thin film
film transistors
direct step
step thin
manufacturing direct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9303012A
Other languages
English (en)
Other versions
FR2702882A1 (fr
Inventor
Sanson Eric
Szydlo Nicolas
Hepp Bernard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson-LCD
Original Assignee
Thomson-LCD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson-LCD filed Critical Thomson-LCD
Priority to FR9303012A priority Critical patent/FR2702882B1/fr
Priority to PCT/FR1994/000278 priority patent/WO1994021102A2/fr
Priority to JP6520709A priority patent/JPH09506738A/ja
Priority to EP94909965A priority patent/EP0689721A1/fr
Priority to US08/522,243 priority patent/US5830785A/en
Publication of FR2702882A1 publication Critical patent/FR2702882A1/fr
Application granted granted Critical
Publication of FR2702882B1 publication Critical patent/FR2702882B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
FR9303012A 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs. Expired - Fee Related FR2702882B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9303012A FR2702882B1 (fr) 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs.
PCT/FR1994/000278 WO1994021102A2 (fr) 1993-03-16 1994-03-15 Procede de fabrication de transistors a couches minces etages directs
JP6520709A JPH09506738A (ja) 1993-03-16 1994-03-15 直接多層薄膜トランジスタの製造方法
EP94909965A EP0689721A1 (fr) 1993-03-16 1994-03-15 Procede de fabrication de transistors a couches minces etages directs
US08/522,243 US5830785A (en) 1993-03-16 1994-03-15 Direct multilevel thin-film transistors production method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9303012A FR2702882B1 (fr) 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs.

Publications (2)

Publication Number Publication Date
FR2702882A1 FR2702882A1 (fr) 1994-09-23
FR2702882B1 true FR2702882B1 (fr) 1995-07-28

Family

ID=9445008

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9303012A Expired - Fee Related FR2702882B1 (fr) 1993-03-16 1993-03-16 Procédé de fabrication de transistors à couches minces étagés directs.

Country Status (5)

Country Link
US (1) US5830785A (fr)
EP (1) EP0689721A1 (fr)
JP (1) JPH09506738A (fr)
FR (1) FR2702882B1 (fr)
WO (1) WO1994021102A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2719416B1 (fr) * 1994-04-29 1996-07-05 Thomson Lcd Procédé de passivation des flancs d'un composant semiconducteur à couches minces.
FR2732781B1 (fr) * 1995-04-07 1997-06-20 Thomson Lcd Procede de fabrication de matrice active tft pour ecran de systeme de projection
TW418432B (en) * 1996-12-18 2001-01-11 Nippon Electric Co Manufacturing method of thin film transistor array
KR100322965B1 (ko) * 1998-03-27 2002-06-20 주식회사 현대 디스플레이 테크놀로지 액정표시소자의 제조방법
JP5408829B2 (ja) * 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー アクティブマトリックス基板の製造方法
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) * 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US6900084B1 (en) 2000-05-09 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display device
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7652359B2 (en) * 2002-12-27 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Article having display device
US7566001B2 (en) 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
US8334209B2 (en) * 2006-09-21 2012-12-18 Micron Technology, Inc. Method of reducing electron beam damage on post W-CMP wafers
WO2010038820A1 (fr) 2008-10-03 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Dispositif d'affichage

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252973A (ja) * 1986-04-25 1987-11-04 Nec Corp 順スタガ−ド型薄膜トランジスタ
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
JPS63172469A (ja) * 1987-01-12 1988-07-16 Fujitsu Ltd 薄膜トランジスタ
JPH01251016A (ja) * 1988-03-31 1989-10-06 Seiko Instr Inc 薄膜トランジスタとその製造方法
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
FR2662290B1 (fr) * 1990-05-15 1992-07-24 France Telecom Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede.
JPH04171767A (ja) * 1990-11-02 1992-06-18 Sharp Corp 薄膜トランジスタ及びその製造方法
DE69131570T2 (de) * 1990-11-16 2000-02-17 Seiko Epson Corp., Tokio/Tokyo Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung
US5299289A (en) * 1991-06-11 1994-03-29 Matsushita Electric Industrial Co., Ltd. Polymer dispersed liquid crystal panel with diffraction grating

Also Published As

Publication number Publication date
JPH09506738A (ja) 1997-06-30
WO1994021102A2 (fr) 1994-09-29
EP0689721A1 (fr) 1996-01-03
WO1994021102A3 (fr) 1994-11-10
FR2702882A1 (fr) 1994-09-23
US5830785A (en) 1998-11-03

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