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FR2695253B1 - Dispositif a transistor de puissance ayant une region a concentration accrue ultra-profonde. - Google Patents

Dispositif a transistor de puissance ayant une region a concentration accrue ultra-profonde.

Info

Publication number
FR2695253B1
FR2695253B1 FR9310793A FR9310793A FR2695253B1 FR 2695253 B1 FR2695253 B1 FR 2695253B1 FR 9310793 A FR9310793 A FR 9310793A FR 9310793 A FR9310793 A FR 9310793A FR 2695253 B1 FR2695253 B1 FR 2695253B1
Authority
FR
France
Prior art keywords
ultra
power transistor
transistor device
concentration region
increased concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9310793A
Other languages
English (en)
Other versions
FR2695253A1 (fr
Inventor
Perry Merril
Herbert J Gould
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR9105460A external-priority patent/FR2662025A1/fr
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of FR2695253A1 publication Critical patent/FR2695253A1/fr
Application granted granted Critical
Publication of FR2695253B1 publication Critical patent/FR2695253B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/491—Vertical IGBTs having both emitter contacts and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
FR9310793A 1990-05-09 1993-09-10 Dispositif a transistor de puissance ayant une region a concentration accrue ultra-profonde. Expired - Fee Related FR2695253B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52117790A 1990-05-09 1990-05-09
FR9105460A FR2662025A1 (fr) 1990-05-09 1991-05-03 Dispositif a transistor de puissance ayant une region a concentration accrue ultra-profonde.

Publications (2)

Publication Number Publication Date
FR2695253A1 FR2695253A1 (fr) 1994-03-04
FR2695253B1 true FR2695253B1 (fr) 1997-09-19

Family

ID=26228667

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9310793A Expired - Fee Related FR2695253B1 (fr) 1990-05-09 1993-09-10 Dispositif a transistor de puissance ayant une region a concentration accrue ultra-profonde.

Country Status (1)

Country Link
FR (1) FR2695253B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19608003C2 (de) * 1996-03-04 2001-11-29 Daimler Chrysler Ag Leistungs-Feldeffekt-Transistor und Verfahren zu seiner Herstellung
RU189905U1 (ru) * 2019-04-01 2019-06-11 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Биполярный кремниевый планарный транзистор

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62298120A (ja) * 1986-06-18 1987-12-25 Hitachi Ltd 半導体装置およびその製造方法
US4717679A (en) * 1986-11-26 1988-01-05 General Electric Company Minimal mask process for fabricating a lateral insulated gate semiconductor device
JP2751926B2 (ja) * 1986-12-22 1998-05-18 日産自動車株式会社 電導度変調形ｍｏｓｆｅｔ
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
JPH0650776B2 (ja) * 1987-08-28 1994-06-29 富士電機株式会社 半導体装置に対するライフタイムキラ−導入方法
JPS6481271A (en) * 1987-09-22 1989-03-27 Nec Corp Conductivity-modulation type mosfet
JPH0247874A (ja) * 1988-08-10 1990-02-16 Fuji Electric Co Ltd Ｍｏｓ型半導体装置の製造方法

Also Published As

Publication number Publication date
FR2695253A1 (fr) 1994-03-04

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Legal Events

Date Code Title Description
ST Notification of lapse