FR2681178B1 - - Google Patents
Info
- Publication number
- FR2681178B1 FR2681178B1 FR9210645A FR9210645A FR2681178B1 FR 2681178 B1 FR2681178 B1 FR 2681178B1 FR 9210645 A FR9210645 A FR 9210645A FR 9210645 A FR9210645 A FR 9210645A FR 2681178 B1 FR2681178 B1 FR 2681178B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/714—Electrodes having non-planar surfaces, e.g. formed by texturisation having horizontal extensions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR910015626 | 1991-09-07 | ||
| KR920005409 | 1992-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2681178A1 FR2681178A1 (fr) | 1993-03-12 |
| FR2681178B1 true FR2681178B1 (de) | 1997-02-07 |
Family
ID=26628732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9210645A Granted FR2681178A1 (fr) | 1991-09-07 | 1992-09-07 | Dispositif de memoire a semi-conducteur muni d'une electrode de stockage comportant des micro-saignees multiples et/ou des micro-cylindres multiples. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2690434B2 (de) |
| DE (1) | DE4229837C2 (de) |
| FR (1) | FR2681178A1 (de) |
| GB (1) | GB2259406B (de) |
| IT (1) | IT1256130B (de) |
| TW (1) | TW222710B (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960002097B1 (ko) * | 1992-02-28 | 1996-02-10 | 삼성전자주식회사 | 반도체장치의 커패시터 제조방법 |
| US5254503A (en) * | 1992-06-02 | 1993-10-19 | International Business Machines Corporation | Process of making and using micro mask |
| JPH0774268A (ja) * | 1993-07-07 | 1995-03-17 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
| US5383088A (en) * | 1993-08-09 | 1995-01-17 | International Business Machines Corporation | Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics |
| US5512768A (en) * | 1994-03-18 | 1996-04-30 | United Microelectronics Corporation | Capacitor for use in DRAM cell using surface oxidized silicon nodules |
| US5869368A (en) * | 1997-09-22 | 1999-02-09 | Yew; Tri-Rung | Method to increase capacitance |
| KR100675275B1 (ko) | 2004-12-16 | 2007-01-26 | 삼성전자주식회사 | 반도체 장치 및 이 장치의 패드 배치방법 |
| TWI295822B (en) | 2006-03-29 | 2008-04-11 | Advanced Semiconductor Eng | Method for forming a passivation layer |
| FR2988712B1 (fr) | 2012-04-02 | 2014-04-11 | St Microelectronics Rousset | Circuit integre equipe d'un dispositif de detection de son orientation spatiale et/ou d'un changement de cette orientation. |
| FR2998417A1 (fr) * | 2012-11-16 | 2014-05-23 | St Microelectronics Rousset | Procede de realisation d'un element pointu de circuit integre, et circuit integre correspondant |
| US11825645B2 (en) | 2020-06-04 | 2023-11-21 | Etron Technology, Inc. | Memory cell structure |
| JP7339319B2 (ja) * | 2021-12-03 | 2023-09-05 | ▲ゆ▼創科技股▲ふん▼有限公司 | メモリセル構造 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63240057A (ja) * | 1987-03-27 | 1988-10-05 | Fujitsu Ltd | スタツク型キヤパシタ |
| JPH01282855A (ja) * | 1988-05-09 | 1989-11-14 | Mitsubishi Electric Corp | 半導体基板上にキャパシタを形成する方法 |
| JPH03165552A (ja) * | 1989-11-24 | 1991-07-17 | Sony Corp | スタックトキャパシタ型ｄｒａｍとその製造方法 |
| JPH03166730A (ja) * | 1989-11-27 | 1991-07-18 | Seiko Instr Inc | 半導体装置の製造方法 |
| DD299990A5 (de) * | 1990-02-23 | 1992-05-14 | Dresden Forschzentr Mikroelek | Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung |
| US5049517A (en) * | 1990-11-07 | 1991-09-17 | Micron Technology, Inc. | Method for formation of a stacked capacitor |
| US5037773A (en) * | 1990-11-08 | 1991-08-06 | Micron Technology, Inc. | Stacked capacitor doping technique making use of rugged polysilicon |
| KR930009583B1 (ko) * | 1990-11-29 | 1993-10-07 | 삼성전자 주식회사 | 융모모양의 커패시터구조를 가진 반도체 메모리장치의 제조방법 |
| JPH04207066A (ja) * | 1990-11-30 | 1992-07-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR930009593B1 (ko) * | 1991-01-30 | 1993-10-07 | 삼성전자 주식회사 | 고집적 반도체 메모리장치 및 그 제조방법(HCC Cell) |
| KR940005288B1 (ko) * | 1991-07-11 | 1994-06-15 | 금성일렉트론 주식회사 | 반도체 장치의 제조방법 |
-
1992
- 1992-09-02 TW TW081106957A patent/TW222710B/zh active
- 1992-09-04 IT ITMI922067A patent/IT1256130B/it active IP Right Grant
- 1992-09-07 DE DE4229837A patent/DE4229837C2/de not_active Expired - Fee Related
- 1992-09-07 FR FR9210645A patent/FR2681178A1/fr active Granted
- 1992-09-07 GB GB9218898A patent/GB2259406B/en not_active Expired - Fee Related
- 1992-09-07 JP JP4265348A patent/JP2690434B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| IT1256130B (it) | 1995-11-29 |
| ITMI922067A1 (it) | 1994-03-04 |
| GB9218898D0 (en) | 1992-10-21 |
| GB2259406B (en) | 1996-05-01 |
| DE4229837A1 (de) | 1993-03-11 |
| JP2690434B2 (ja) | 1997-12-10 |
| DE4229837C2 (de) | 1996-07-11 |
| ITMI922067A0 (it) | 1992-09-04 |
| JPH05198745A (ja) | 1993-08-06 |
| GB2259406A (en) | 1993-03-10 |
| TW222710B (de) | 1994-04-21 |
| FR2681178A1 (fr) | 1993-03-12 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20100531 |