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FR2449974B1 - - Google Patents

Info

Publication number
FR2449974B1
FR2449974B1 FR8004179A FR8004179A FR2449974B1 FR 2449974 B1 FR2449974 B1 FR 2449974B1 FR 8004179 A FR8004179 A FR 8004179A FR 8004179 A FR8004179 A FR 8004179A FR 2449974 B1 FR2449974 B1 FR 2449974B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8004179A
Other versions
FR2449974A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2449974A1 publication Critical patent/FR2449974A1/fr
Application granted granted Critical
Publication of FR2449974B1 publication Critical patent/FR2449974B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
FR8004179A 1979-02-26 1980-02-26 Dispositif de formation d'image couleur a semi-conducteurs et methode de fabrication de ce dernier Granted FR2449974A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54020801A JPS6046401B2 (ja) 1979-02-26 1979-02-26 固体撮像素子の製造方法

Publications (2)

Publication Number Publication Date
FR2449974A1 FR2449974A1 (fr) 1980-09-19
FR2449974B1 true FR2449974B1 (fr) 1983-06-24

Family

ID=12037151

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8004179A Granted FR2449974A1 (fr) 1979-02-26 1980-02-26 Dispositif de formation d'image couleur a semi-conducteurs et methode de fabrication de ce dernier

Country Status (7)

Country Link
US (1) US4285007A (fr)
JP (1) JPS6046401B2 (fr)
CA (1) CA1133614A (fr)
DE (1) DE3006919C2 (fr)
FR (1) FR2449974A1 (fr)
GB (1) GB2043998B (fr)
NL (1) NL8001159A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687782U (fr) * 1979-12-10 1981-07-14
US4315978A (en) * 1980-03-06 1982-02-16 Eastman Kodak Company Solid-state color imaging device having a color filter array using a photocrosslinkable barrier
JPS56165362A (en) * 1980-05-26 1981-12-18 Hitachi Ltd Manufacture of solid state color image pickup element
JPS5754905A (en) 1980-09-19 1982-04-01 Hitachi Ltd Manufacture of color filter
JPS57148367A (en) * 1981-03-09 1982-09-13 Nec Corp Manufacture of solid state color image pickup element
US4882616A (en) * 1981-06-29 1989-11-21 Nippon Electric Co., Ltd. Color filter for a solid state imaging device
JPS5812354A (ja) * 1981-07-15 1983-01-24 Toshiba Corp カラ−用固体撮像装置の製造方法
JPS5898959A (ja) * 1981-12-09 1983-06-13 Hitachi Ltd カラー固体撮像素子の製造方法
US4577098A (en) * 1982-04-14 1986-03-18 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor with a phototropic or fluorescent layer
JPS5999761A (ja) * 1982-11-30 1984-06-08 Fuji Photo Film Co Ltd カラ−固体撮像素子の製造方法
JPS59175761A (ja) * 1983-03-26 1984-10-04 Mitsubishi Electric Corp カラ−フイルタ付固体撮像素子の製造方法
US4553153A (en) * 1983-10-21 1985-11-12 Eastman Kodak Company Planarizing layer for semiconductor substrates such as solid state imagers
JPS6130068A (ja) * 1984-07-23 1986-02-12 Victor Co Of Japan Ltd カラ−化固体撮像素子製造法
JPH053361Y2 (fr) * 1986-07-14 1993-01-27
US5568186A (en) * 1993-11-15 1996-10-22 The United States Of America As Represented By The Secretary Of The Army Focal plane filtered multispectral multidetector imager
US6252220B1 (en) 1999-04-26 2001-06-26 Xerox Corporation Sensor cover glass with infrared filter
EP1138394A1 (fr) * 2000-03-31 2001-10-04 Nordson Corporation Améliorations concernant un système de revêtement en poudre
US6316284B1 (en) 2000-09-07 2001-11-13 Xerox Corporation Infrared correction in color scanners
US6768565B1 (en) 2000-09-07 2004-07-27 Xerox Corporation Infrared correction in color scanners
WO2003038901A1 (fr) * 2001-10-26 2003-05-08 Stmicroelectronics Nv Procede de production d'un capteur d'image tfa, et capteur d'image tfa y relatif
US7282382B2 (en) * 2001-10-29 2007-10-16 Stmicroelectronics N.V. Method for producing a photodiode contact for a TFA image sensor
AT505688A1 (de) * 2007-09-13 2009-03-15 Nanoident Technologies Ag Sensormatrix aus halbleiterbauteilen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623794A (en) * 1968-12-19 1971-11-30 Technical Operations Inc Spectral zonal encoder
US3619041A (en) * 1969-01-13 1971-11-09 Technical Operations Inc Spectral zonal encoder employing a silver halide emulsion layer
US4081277A (en) * 1976-10-08 1978-03-28 Eastman Kodak Company Method for making a solid-state color imaging device having an integral color filter and the device
US4204866A (en) * 1976-10-08 1980-05-27 Eastman Kodak Company Solid-state color imaging devices and method for making them
US4196010A (en) * 1978-06-06 1980-04-01 Eastman Kodak Company Color filter arrays and color imaging devices
US4190446A (en) * 1978-09-06 1980-02-26 Eastman Kodak Company Photocrosslinkable, high-temperature-resistant polymers and their use in color imaging devices

Also Published As

Publication number Publication date
JPS6046401B2 (ja) 1985-10-16
GB2043998A (en) 1980-10-08
JPS55115371A (en) 1980-09-05
CA1133614A (fr) 1982-10-12
DE3006919C2 (de) 1986-01-16
DE3006919A1 (de) 1980-08-28
US4285007A (en) 1981-08-18
GB2043998B (en) 1983-05-05
NL8001159A (nl) 1980-08-28
FR2449974A1 (fr) 1980-09-19

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Legal Events

Date Code Title Description
ST Notification of lapse