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FR2438264A1 - SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY - Google Patents

SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY

Info

Publication number
FR2438264A1
FR2438264A1 FR7924695A FR7924695A FR2438264A1 FR 2438264 A1 FR2438264 A1 FR 2438264A1 FR 7924695 A FR7924695 A FR 7924695A FR 7924695 A FR7924695 A FR 7924695A FR 2438264 A1 FR2438264 A1 FR 2438264A1
Authority
FR
France
Prior art keywords
silicon
diaphragm assembly
pressure
thin
silicon diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7924695A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2438264A1 publication Critical patent/FR2438264A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

ASSEMBLAGE TRANSDUCTEUR DE PRESSION SEMI-CONDUCTEUR CARACTERISE EN CE QU'IL COMPORTE UN ASSEMBLAGE 10 DE DIAPHRAGME EN SILICIUM D'UN SUBSTRAT A CRISTAL UNIQUE DE SILICIUM, A LA PARTIE INFERIEURE DUQUEL EST FORMEE, PAR ATTAQUE A L'ACIDE, UNE GORGE 60 DESTINEE A DELIMITER UNE PARTIE MINCE 10A SENSIBLE A LA PRESSION ET TOUT AUTOUR UNE PARTIE EPAISSE DE SUPPORT 10B. DES JAUGES DE CONTRAINTE PIEZORESISTANTES 20 SONT DIFFUSEES SUR UNE SURFACE SUPERIEURE DE L'ASSEMBLAGE DE DIAPHRAGME EN SILICIUM ET LEURS VALEURS DE RESISTANCE VARIENT EN FONCTION DES DEFORMATIONS QUI S'EXERCENT SUR LA PARTIE MINCE 10A SENSIBLE A LA PRESSION, EN REPONSE A LA PRESSION APPLIQUEE. L'ASSEMBLAGE DE DIAPHRAGME EN SILICIUM COMPREND UNE COUCHE DE PASSIVATION 40 EN DIOXYDE DE SILICIUM FORMEE SUR LA SURFACE SUPERIEURE POUR PROTEGER LES ELEMENTS PIEZORESISTANTS 20 ETC., ET UNE COUCHE EN DIOXYDE DE SILICIUM 70 FORMEE SUR UNE SURFACE INTERIEURE DE LA GORGE POUR ELIMINER LES TENSIONS PROVOQUEES SUR LA PARTIE MINCE 10A SENSIBLE A LA PRESSION A CAUSE DE LA DIFFERENCE DE DILATATION THERMIQUE ENTRE L'ASSEMBLAGE DE DIAPHRAGME EN SILICIUM ET LA COUCHE DE PASSIVATION.SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY CHARACTERIZED IN INCLUDING A SILICON DIAPHRAGM ASSEMBLY OF A SINGLE SILICON CRYSTAL SUBSTRATE, AT THE LOWER PART OF WHICH IS FORMED, BY ACID ATTACK, A THROAT 60 DESIGNED TO DELIMITE A THIN PART 10A SENSITIVE TO PRESSURE AND ALL AROUND A THICK PART OF SUPPORT 10B. 20 PIEZORESIST STRAIN GAUGES ARE DIFFUSED ON AN UPPER SURFACE OF THE SILICON DIAPHRAGM ASSEMBLY AND THEIR RESISTANCE VALUES VARY ACCORDING TO THE DEFORMATIONS EXERCISED ON THE PRESSURE SENSITIVE THIN 10A PART, IN RESPONSE TO THE PRESSURE . SILICON DIAPHRAGM ASSEMBLY INCLUDES A SILICON DIOXIDE 40 PASSIVATION LAYER FORMED ON THE TOP SURFACE TO PROTECT PIEZORESIST ELEMENTS 20 ETC., AND A SILICON DIOXIDE 70 LAYER FORMED ON AN INTERIOR SURFACE OF THE THROAT ELIMINER TENSIONS CAUSED ON THE 10A THIN PRESSURE SENSITIVE PART DUE TO THE DIFFERENCE IN THERMAL EXPANSION BETWEEN THE SILICON DIAPHRAGM ASSEMBLY AND THE PASSIVATION LAYER.

FR7924695A 1978-10-06 1979-10-04 SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY Withdrawn FR2438264A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12254078A JPS5550668A (en) 1978-10-06 1978-10-06 Semiconductor pressure converter

Publications (1)

Publication Number Publication Date
FR2438264A1 true FR2438264A1 (en) 1980-04-30

Family

ID=14838386

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7924695A Withdrawn FR2438264A1 (en) 1978-10-06 1979-10-04 SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY

Country Status (6)

Country Link
JP (1) JPS5550668A (en)
AU (1) AU5117679A (en)
DE (1) DE2940497A1 (en)
FR (1) FR2438264A1 (en)
GB (1) GB2034970A (en)
IT (1) IT7926278A0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4111539A1 (en) * 1990-07-05 1992-01-16 Mitsubishi Electric Corp SEMICONDUCTOR PRESSURE RECEIVER AND METHOD FOR THE PRODUCTION THEREOF

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57142533A (en) * 1981-02-27 1982-09-03 Mitsubishi Electric Corp Pressure sensor
JPS6056244U (en) * 1983-09-26 1985-04-19 住友電気工業株式会社 semiconductor pressure sensor
JPS60149369A (en) * 1984-01-14 1985-08-06 Hitoshi Nagaoka Mycelial extract of ganoderma lucidum and production thereof
GB2229816B (en) * 1989-03-31 1992-11-18 Stc Plc Pressure sensor
AU660358B2 (en) * 1992-03-30 1995-06-22 Awa Microelectronics Pty Limited Silicon transducer
DE4309917A1 (en) * 1992-03-30 1993-10-07 Awa Microelectronics Process for the production of silicon microstructures and silicon microstructure
US6647794B1 (en) * 2002-05-06 2003-11-18 Rosemount Inc. Absolute pressure sensor
TWI583931B (en) * 2016-02-02 2017-05-21 Asia Pacific Microsystems Inc Miniature piezoresistive pressure sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1295650A (en) * 1968-11-29 1972-11-08
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
DE2717052A1 (en) * 1976-04-19 1977-11-10 Hitachi Ltd SEMI-CONDUCTOR TRANSMITTER
US4065971A (en) * 1975-07-04 1978-01-03 Hitachi, Ltd. Semiconductor pressure transducer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1295650A (en) * 1968-11-29 1972-11-08
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
US4065971A (en) * 1975-07-04 1978-01-03 Hitachi, Ltd. Semiconductor pressure transducer
DE2717052A1 (en) * 1976-04-19 1977-11-10 Hitachi Ltd SEMI-CONDUCTOR TRANSMITTER

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4111539A1 (en) * 1990-07-05 1992-01-16 Mitsubishi Electric Corp SEMICONDUCTOR PRESSURE RECEIVER AND METHOD FOR THE PRODUCTION THEREOF

Also Published As

Publication number Publication date
IT7926278A0 (en) 1979-10-05
DE2940497A1 (en) 1980-04-10
JPS5550668A (en) 1980-04-12
GB2034970A (en) 1980-06-11
AU5117679A (en) 1980-04-17

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Legal Events

Date Code Title Description
RE Withdrawal of published application