[go: up one dir, main page]

JPS5550668A - Semiconductor pressure converter - Google Patents

Semiconductor pressure converter

Info

Publication number
JPS5550668A
JPS5550668A JP12254078A JP12254078A JPS5550668A JP S5550668 A JPS5550668 A JP S5550668A JP 12254078 A JP12254078 A JP 12254078A JP 12254078 A JP12254078 A JP 12254078A JP S5550668 A JPS5550668 A JP S5550668A
Authority
JP
Japan
Prior art keywords
receiving portion
pressure receiving
film
die
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12254078A
Other languages
Japanese (ja)
Inventor
Minoru Takahashi
Hitoshi Minorikawa
Kazuji Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12254078A priority Critical patent/JPS5550668A/en
Priority to AU51176/79A priority patent/AU5117679A/en
Priority to GB7934401A priority patent/GB2034970A/en
Priority to FR7924695A priority patent/FR2438264A1/en
Priority to IT7926278A priority patent/IT7926278A0/en
Priority to DE19792940497 priority patent/DE2940497A1/en
Publication of JPS5550668A publication Critical patent/JPS5550668A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To reduce the zero degree temperature dependence of a semiconductor pressure converter and improve the insulating properties thereof by coating the same film as a passivation film provided on the surface of a thin pressure receiving portion of a silicon diaphragm disposed on a galss die even on the back of the thin pressure receiving portion thereof.
CONSTITUTION: Impurities are diffused on both sides of the surface of a silicon diaphragm 10 to thereby form a strain gauge 20, and corrosion resistant electrodes 30 of aluminum of Ti-Pd-Au or the like are mounted thereat. Passivation film 40 of SiO2 or the like is coated on the upper surface except for the electrodes 30, a hole 60 with bottom is perforated at the lower surface of the diaphragm 10 to thus form a thin pressure receiving portion 10a, and thick stationary portions 10a disposed at both sides of the portion 10b are secured to glass die 50 by means of anode junction process or the like. The same SiO2 film 40a as the film 40 provided on the surface is newly coated on the back surface of the pressure receiving portion 10b facing oppositely to the die 50 by means of a CVD process. Thus, even if the environmental temperature is at 100°C, the temperature dependence is not more than several percent.
COPYRIGHT: (C)1980,JPO&Japio
JP12254078A 1978-10-06 1978-10-06 Semiconductor pressure converter Pending JPS5550668A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP12254078A JPS5550668A (en) 1978-10-06 1978-10-06 Semiconductor pressure converter
AU51176/79A AU5117679A (en) 1978-10-06 1979-09-25 Semiconductor pressure transducer assembly
GB7934401A GB2034970A (en) 1978-10-06 1979-10-04 Semiconductor pressure transducer
FR7924695A FR2438264A1 (en) 1978-10-06 1979-10-04 SEMICONDUCTOR PRESSURE TRANSDUCER ASSEMBLY
IT7926278A IT7926278A0 (en) 1978-10-06 1979-10-05 SEMI-CONDUCTOR PRESSURE TRANSDUCER ASSEMBLY.
DE19792940497 DE2940497A1 (en) 1978-10-06 1979-10-05 SEMICONDUCTOR PRESSURE TRANSDUCER ARRANGEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12254078A JPS5550668A (en) 1978-10-06 1978-10-06 Semiconductor pressure converter

Publications (1)

Publication Number Publication Date
JPS5550668A true JPS5550668A (en) 1980-04-12

Family

ID=14838386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12254078A Pending JPS5550668A (en) 1978-10-06 1978-10-06 Semiconductor pressure converter

Country Status (6)

Country Link
JP (1) JPS5550668A (en)
AU (1) AU5117679A (en)
DE (1) DE2940497A1 (en)
FR (1) FR2438264A1 (en)
GB (1) GB2034970A (en)
IT (1) IT7926278A0 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57142533A (en) * 1981-02-27 1982-09-03 Mitsubishi Electric Corp Pressure sensor
JPS6056244U (en) * 1983-09-26 1985-04-19 住友電気工業株式会社 semiconductor pressure sensor
JPS60149369A (en) * 1984-01-14 1985-08-06 Hitoshi Nagaoka Mycelial extract of ganoderma lucidum and production thereof

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2229816B (en) * 1989-03-31 1992-11-18 Stc Plc Pressure sensor
JPH0465643A (en) * 1990-07-05 1992-03-02 Mitsubishi Electric Corp Semiconductor pressure sensor and its manufacture
AU660358B2 (en) * 1992-03-30 1995-06-22 Awa Microelectronics Pty Limited Silicon transducer
DE4309917A1 (en) * 1992-03-30 1993-10-07 Awa Microelectronics Process for the production of silicon microstructures and silicon microstructure
US6647794B1 (en) * 2002-05-06 2003-11-18 Rosemount Inc. Absolute pressure sensor
TWI583931B (en) * 2016-02-02 2017-05-21 Asia Pacific Microsystems Inc Miniature piezoresistive pressure sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL162254B (en) * 1968-11-29 1979-11-15 Philips Nv SEMI-CONDUCTOR DEVICE FOR CONVERSION OF MECHANICAL VOLTAGES INTO ELECTRICAL SIGNALS AND METHOD OF MANUFACTURING THIS.
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
JPS5217780A (en) * 1975-07-04 1977-02-09 Hitachi Ltd Pressure convertor with semi-conductor elements
JPS52127257A (en) * 1976-04-19 1977-10-25 Hitachi Ltd Displacement converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57142533A (en) * 1981-02-27 1982-09-03 Mitsubishi Electric Corp Pressure sensor
JPS6056244U (en) * 1983-09-26 1985-04-19 住友電気工業株式会社 semiconductor pressure sensor
JPS60149369A (en) * 1984-01-14 1985-08-06 Hitoshi Nagaoka Mycelial extract of ganoderma lucidum and production thereof

Also Published As

Publication number Publication date
IT7926278A0 (en) 1979-10-05
DE2940497A1 (en) 1980-04-10
FR2438264A1 (en) 1980-04-30
GB2034970A (en) 1980-06-11
AU5117679A (en) 1980-04-17

Similar Documents

Publication Publication Date Title
JPS5780532A (en) Semiconductor load converter
JPS5550668A (en) Semiconductor pressure converter
JPS5425178A (en) Manufacture for semiconductor device
JPS52127257A (en) Displacement converter
JPS5451490A (en) Semiconductor pressure converter
JPS5352383A (en) Electrode formation method
JPS54162491A (en) Semiconductor pressure transducer
JPS6489527A (en) Schottky diode
JPS5432282A (en) Semiconductor pressre conversion unit
JPS5512735A (en) Semiconductor device
JPS55138859A (en) Multilayer wiring type semiconductor device
JPS54159886A (en) Production of semiconductor device
JPS5498178A (en) Electronic device
JPS53109490A (en) Semiconductor strain gauge
JPS5522819A (en) Semiconductor strain gauge absolute pressure sensor
JPS5745957A (en) Circuit substrate and manufacture thereof
JPS54122088A (en) Metal substrate for semiconductor-pellet mounting
JPS54140884A (en) Manufacture of semiconductor device
JPS6442843A (en) Semiconductor device
JPS54140883A (en) Semiconductor device
JPS57186136A (en) Semiconductor pressure transducer
JPS5544734A (en) Semiconductor device
JPS53110464A (en) Semiconductor device
KR870010638A (en) Method of manufacturing metal-insulated semiconductor polycrystalline silicon solar cell
JPS5640276A (en) Preparation of semiconductor device