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FR2378412A1 - Dispositif de formation d'image a semi-conducteurs - Google Patents

Dispositif de formation d'image a semi-conducteurs

Info

Publication number
FR2378412A1
FR2378412A1 FR7801742A FR7801742A FR2378412A1 FR 2378412 A1 FR2378412 A1 FR 2378412A1 FR 7801742 A FR7801742 A FR 7801742A FR 7801742 A FR7801742 A FR 7801742A FR 2378412 A1 FR2378412 A1 FR 2378412A1
Authority
FR
France
Prior art keywords
substrate
semiconductor
training device
photodiode
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7801742A
Other languages
English (en)
Other versions
FR2378412B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP52005953A external-priority patent/JPS5823992B2/ja
Priority claimed from JP3616377A external-priority patent/JPS53122316A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2378412A1 publication Critical patent/FR2378412A1/fr
Application granted granted Critical
Publication of FR2378412B1 publication Critical patent/FR2378412B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

Dispositif de formation d'image à semi-conducteurs, comportant une multiplicité d'éléments de formation d'image, formés chacun d'une photodiode et d'un transistor de commutation et répartis en ensemble bidimensionnel sur un même substrat semi-conducteur, et des circuits de balayage. Chacun desdits éléments comprend une couche semi-conductrice, à conductibilité de type opposé à celui du substrat, disposée dans une grande face du substrat, un moyen appliquant une polarisation inverse entre cette couche et le substrat, et une région à forte concentration en impureté, à conductibilité de même type que la couche semi-conductrice et disposée sous une partie au moins de la photodiode. Application dans les caméras de télévision et analogues.
FR7801742A 1977-01-24 1978-01-23 Dispositif de formation d'image a semi-conducteurs Granted FR2378412A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP52005953A JPS5823992B2 (ja) 1977-01-24 1977-01-24 固体撮像装置
JP3616377A JPS53122316A (en) 1977-04-01 1977-04-01 Solid state pickup device

Publications (2)

Publication Number Publication Date
FR2378412A1 true FR2378412A1 (fr) 1978-08-18
FR2378412B1 FR2378412B1 (fr) 1982-12-17

Family

ID=26339993

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7801742A Granted FR2378412A1 (fr) 1977-01-24 1978-01-23 Dispositif de formation d'image a semi-conducteurs

Country Status (5)

Country Link
US (1) US4148048A (fr)
DE (1) DE2802987A1 (fr)
FR (1) FR2378412A1 (fr)
GB (1) GB1595253A (fr)
NL (1) NL7800848A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2415398A1 (fr) * 1978-01-23 1979-08-17 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
FR2449377A1 (fr) * 1979-02-19 1980-09-12 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
EP0033230A2 (fr) * 1980-01-23 1981-08-05 Hitachi, Ltd. Dispositif de prise de vue à l'état solide
FR2510308A1 (fr) * 1981-07-27 1983-01-28 Sony Corp Detecteur d'image a l'etat solide

Families Citing this family (43)

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US4236829A (en) * 1978-01-31 1980-12-02 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor
US4198646A (en) * 1978-10-13 1980-04-15 Hughes Aircraft Company Monolithic imager for near-IR
US4412236A (en) * 1979-08-24 1983-10-25 Hitachi, Ltd. Color solid-state imager
US4266237A (en) * 1979-09-07 1981-05-05 Honeywell Inc. Semiconductor apparatus
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
US4527182A (en) * 1980-09-19 1985-07-02 Nippon Electric Co., Ltd. Semiconductor photoelectric converter making excessive charges flow vertically
DE3138295A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit hoher packungsdichte
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
EP0125691B1 (fr) * 1983-05-16 1991-07-17 Fuji Photo Film Co., Ltd. Méthode pour détecter une image par rayonnement
JPS6043857A (ja) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp 固体撮像装置とその製造方法
US4941029A (en) * 1985-02-27 1990-07-10 Westinghouse Electric Corp. High resistance optical shield for visible sensors
KR940009648B1 (ko) * 1991-10-15 1994-10-15 금성일렉트론 주식회사 전하결합소자의 제조방법
US7199410B2 (en) * 1999-12-14 2007-04-03 Cypress Semiconductor Corporation (Belgium) Bvba Pixel structure with improved charge transfer
US6815791B1 (en) * 1997-02-10 2004-11-09 Fillfactory Buried, fully depletable, high fill factor photodiodes
JPH11274462A (ja) 1998-03-23 1999-10-08 Sony Corp 固体撮像装置
US6353240B2 (en) * 1999-06-02 2002-03-05 United Microelectronics Corp. CMOS sensor with shallow and deep regions
US6504194B1 (en) 1999-12-01 2003-01-07 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP3467013B2 (ja) 1999-12-06 2003-11-17 キヤノン株式会社 固体撮像装置
US6960817B2 (en) * 2000-04-21 2005-11-01 Canon Kabushiki Kaisha Solid-state imaging device
US6559488B1 (en) 2000-10-02 2003-05-06 Stmicroelectronics, Inc. Integrated photodetector
US6580109B1 (en) 2002-02-01 2003-06-17 Stmicroelectronics, Inc. Integrated circuit device including two types of photodiodes
US6743652B2 (en) * 2002-02-01 2004-06-01 Stmicroelectronics, Inc. Method for making an integrated circuit device including photodiodes
WO2005109512A1 (fr) * 2004-05-06 2005-11-17 Canon Kabushiki Kaisha Dispositif de conversion photoélectrique et sa méthode de fabrication
US7750958B1 (en) 2005-03-28 2010-07-06 Cypress Semiconductor Corporation Pixel structure
US7808022B1 (en) 2005-03-28 2010-10-05 Cypress Semiconductor Corporation Cross talk reduction
US8476567B2 (en) 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
JP2011142344A (ja) * 2011-04-04 2011-07-21 Sony Corp 固体撮像装置
US8466000B2 (en) 2011-04-14 2013-06-18 United Microelectronics Corp. Backside-illuminated image sensor and fabricating method thereof
US20130010165A1 (en) 2011-07-05 2013-01-10 United Microelectronics Corp. Optical micro structure, method for fabricating the same and applications thereof
US9312292B2 (en) 2011-10-26 2016-04-12 United Microelectronics Corp. Back side illumination image sensor and manufacturing method thereof
US8318579B1 (en) 2011-12-01 2012-11-27 United Microelectronics Corp. Method for fabricating semiconductor device
US8815102B2 (en) 2012-03-23 2014-08-26 United Microelectronics Corporation Method for fabricating patterned dichroic film
US9401441B2 (en) 2012-06-14 2016-07-26 United Microelectronics Corporation Back-illuminated image sensor with dishing depression surface
US8779344B2 (en) 2012-07-11 2014-07-15 United Microelectronics Corp. Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically
US8828779B2 (en) 2012-11-01 2014-09-09 United Microelectronics Corp. Backside illumination (BSI) CMOS image sensor process
US8779484B2 (en) 2012-11-29 2014-07-15 United Microelectronics Corp. Image sensor and process thereof
US9279923B2 (en) 2013-03-26 2016-03-08 United Microelectronics Corporation Color filter layer and method of fabricating the same
US9537040B2 (en) 2013-05-09 2017-01-03 United Microelectronics Corp. Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof
US9129876B2 (en) 2013-05-28 2015-09-08 United Microelectronics Corp. Image sensor and process thereof
US9054106B2 (en) 2013-11-13 2015-06-09 United Microelectronics Corp. Semiconductor structure and method for manufacturing the same
US9841319B2 (en) 2013-11-19 2017-12-12 United Microelectronics Corp. Light detecting device
JP2014135515A (ja) * 2014-04-08 2014-07-24 Sony Corp 固体撮像装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE383573B (sv) * 1971-04-06 1976-03-15 Western Electric Co Laddningskopplad anordning
JPS5226974B2 (fr) * 1973-02-14 1977-07-18
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
US3983395A (en) * 1974-11-29 1976-09-28 General Electric Company MIS structures for background rejection in infrared imaging devices
US3988619A (en) * 1974-12-27 1976-10-26 International Business Machines Corporation Random access solid-state image sensor with non-destructive read-out
JPS5619786B2 (fr) * 1975-02-20 1981-05-09
JPS5310433B2 (fr) * 1975-03-10 1978-04-13
US3996600A (en) * 1975-07-10 1976-12-07 International Business Machines Corporation Charge coupled optical scanner with blooming control
US4028719A (en) * 1976-03-11 1977-06-07 Northrop Corporation Array type charge extraction device for infra-red detection

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NV700/73 *
NV700/76 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2415398A1 (fr) * 1978-01-23 1979-08-17 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
FR2449377A1 (fr) * 1979-02-19 1980-09-12 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
EP0033230A2 (fr) * 1980-01-23 1981-08-05 Hitachi, Ltd. Dispositif de prise de vue à l'état solide
EP0033230A3 (en) * 1980-01-23 1983-06-08 Hitachi, Ltd. Solid-state imaging device
FR2510308A1 (fr) * 1981-07-27 1983-01-28 Sony Corp Detecteur d'image a l'etat solide

Also Published As

Publication number Publication date
FR2378412B1 (fr) 1982-12-17
NL7800848A (nl) 1978-07-26
GB1595253A (en) 1981-08-12
US4148048A (en) 1979-04-03
DE2802987A1 (de) 1978-07-27

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