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FR2371062A1 - - Google Patents

Info

Publication number
FR2371062A1
FR2371062A1 FR7733956A FR7733956A FR2371062A1 FR 2371062 A1 FR2371062 A1 FR 2371062A1 FR 7733956 A FR7733956 A FR 7733956A FR 7733956 A FR7733956 A FR 7733956A FR 2371062 A1 FR2371062 A1 FR 2371062A1
Authority
FR
France
Prior art keywords
metal
semiconductor
mixture
solution
alcoholic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7733956A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2371062A1 publication Critical patent/FR2371062A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

L'invention décrit un procédé perfectionné pour préparer une solution de revêtement (silicate de métal) pouvant servir à former des pellicules d'organosilicate de métal sur des surfaces de semi-conducteurs. On forme un mélange d'une première solution (alcoolique) comportant un sel de métal et un agent de réticulation et d'une seconde solution (alcoolique) comportant un silicate organique, puis on fait vieillir le mélange pendant une période prédéterminée de temps. On peut ensuite appliquer le mélange à la surface du semi-conducteur où une reticulation donne une pellicule viable. Le chauffage du semi-conducteur provoque la formation d'une pellicule de métal qui diffuse dans ce semi-conducteur. Le procédé permet la diffusion des atomes d'un métal (Au ou Pu) dans du silicium pour en régler les caractéristiques de fonctionnement.
FR7733956A 1976-11-15 1977-11-10 Withdrawn FR2371062A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/741,793 US4126713A (en) 1976-11-15 1976-11-15 Forming films on semiconductor surfaces with metal-silica solution

Publications (1)

Publication Number Publication Date
FR2371062A1 true FR2371062A1 (fr) 1978-06-09

Family

ID=24982230

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7733956A Withdrawn FR2371062A1 (fr) 1976-11-15 1977-11-10

Country Status (3)

Country Link
US (1) US4126713A (fr)
DE (1) DE2750805A1 (fr)
FR (1) FR2371062A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015064A1 (fr) * 1979-01-31 1980-09-03 Fujitsu Limited Procédé de fabrication d'un dispositif semiconducteur bipolaire

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4259409A (en) * 1980-03-06 1981-03-31 Ses, Incorporated Electroless plating process for glass or ceramic bodies and product
JPS6021888A (ja) * 1983-07-18 1985-02-04 工業技術院長 セラミツクスのメタライズ法
JP2004259882A (ja) * 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
FR2128793A1 (en) * 1971-03-09 1972-10-20 Motorola Inc Radiation sensitive material - for photolithography consisting of mixt of liquid organo siloxane and sensitising agent eg
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors
US3834939A (en) * 1970-02-19 1974-09-10 Ibm Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (fr) * 1958-08-13 1900-01-01
GB930091A (en) * 1960-06-24 1963-07-03 Mond Nickel Co Ltd Improvements relating to the production of semi-conductor devices
US3535146A (en) * 1967-05-02 1970-10-20 Aircraft Plating Inc Diffusion coating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3834939A (en) * 1970-02-19 1974-09-10 Ibm Method of forming doped silicon oxide layers on substrates and paint-on compositions useful in such methods
US3660156A (en) * 1970-08-19 1972-05-02 Monsanto Co Semiconductor doping compositions
FR2128793A1 (en) * 1971-03-09 1972-10-20 Motorola Inc Radiation sensitive material - for photolithography consisting of mixt of liquid organo siloxane and sensitising agent eg
US3915766A (en) * 1972-05-31 1975-10-28 Texas Instruments Inc Composition for use in forming a doped oxide film
US3789023A (en) * 1972-08-09 1974-01-29 Motorola Inc Liquid diffusion dopant source for semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015064A1 (fr) * 1979-01-31 1980-09-03 Fujitsu Limited Procédé de fabrication d'un dispositif semiconducteur bipolaire

Also Published As

Publication number Publication date
US4126713A (en) 1978-11-21
DE2750805A1 (de) 1978-05-18

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Legal Events

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