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FR1441010A - Semiconductor contact device enhancements - Google Patents

Semiconductor contact device enhancements

Info

Publication number
FR1441010A
FR1441010A FR22569A FR22569A FR1441010A FR 1441010 A FR1441010 A FR 1441010A FR 22569 A FR22569 A FR 22569A FR 22569 A FR22569 A FR 22569A FR 1441010 A FR1441010 A FR 1441010A
Authority
FR
France
Prior art keywords
contact device
semiconductor contact
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR22569A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Application granted granted Critical
Publication of FR1441010A publication Critical patent/FR1441010A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • H10N70/026Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/841Electrodes
    • H10N70/8418Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Insulators (AREA)
FR22569A 1964-07-04 1965-06-28 Semiconductor contact device enhancements Expired FR1441010A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED44895A DE1263197B (en) 1964-07-04 1964-07-04 Method for producing a solid-state electronic switching element without a barrier layer and an element produced therefrom

Publications (1)

Publication Number Publication Date
FR1441010A true FR1441010A (en) 1966-06-03

Family

ID=7048628

Family Applications (1)

Application Number Title Priority Date Filing Date
FR22569A Expired FR1441010A (en) 1964-07-04 1965-06-28 Semiconductor contact device enhancements

Country Status (5)

Country Link
CH (1) CH434484A (en)
DE (1) DE1263197B (en)
FR (1) FR1441010A (en)
GB (1) GB1101094A (en)
NL (1) NL6508335A (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB579218A (en) * 1943-07-09 1946-07-26 Standard Telephones Cables Ltd Rectifiers and method of making same
DE860973C (en) * 1944-08-21 1952-12-29 Siemens Ag detector
DE970899C (en) * 1948-10-02 1958-11-13 Siemens Ag Two-layer dry rectifier
DE1079212B (en) * 1958-06-30 1960-04-07 Siemens Ag Semiconductor arrangement with partially negative voltage characteristics, in particular switching diode

Also Published As

Publication number Publication date
GB1101094A (en) 1968-01-31
DE1263197B (en) 1968-03-14
CH434484A (en) 1967-04-30
NL6508335A (en) 1966-01-05

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