[go: up one dir, main page]

ES542409A0 - "un dispositivo semiconductor acoplado en carga" - Google Patents

"un dispositivo semiconductor acoplado en carga"

Info

Publication number
ES542409A0
ES542409A0 ES542409A ES542409A ES542409A0 ES 542409 A0 ES542409 A0 ES 542409A0 ES 542409 A ES542409 A ES 542409A ES 542409 A ES542409 A ES 542409A ES 542409 A0 ES542409 A0 ES 542409A0
Authority
ES
Spain
Prior art keywords
clock
signals
shift register
load
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES542409A
Other languages
English (en)
Other versions
ES8702739A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES542409A0 publication Critical patent/ES542409A0/es
Publication of ES8702739A1 publication Critical patent/ES8702739A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Networks Using Active Elements (AREA)
  • Shift Register Type Memory (AREA)
  • Light Receiving Elements (AREA)
ES542409A 1984-04-24 1985-04-19 "un dispositivo semiconductor acoplado en carga" Expired ES8702739A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8401311A NL8401311A (nl) 1984-04-24 1984-04-24 Ladingsgekoppelde halfgeleiderinrichting met dynamische besturing.

Publications (2)

Publication Number Publication Date
ES542409A0 true ES542409A0 (es) 1986-12-16
ES8702739A1 ES8702739A1 (es) 1986-12-16

Family

ID=19843850

Family Applications (1)

Application Number Title Priority Date Filing Date
ES542409A Expired ES8702739A1 (es) 1984-04-24 1985-04-19 "un dispositivo semiconductor acoplado en carga"

Country Status (10)

Country Link
US (1) US4677650A (es)
EP (1) EP0161023B1 (es)
JP (1) JPS60239058A (es)
AT (1) ATE44848T1 (es)
AU (1) AU581127B2 (es)
CA (1) CA1243112A (es)
DE (1) DE3571730D1 (es)
ES (1) ES8702739A1 (es)
NL (1) NL8401311A (es)
SG (1) SG88690G (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8501210A (nl) * 1985-04-29 1986-11-17 Philips Nv Ladingsgekoppelde inrichting.
NL8603008A (nl) * 1986-11-27 1988-06-16 Philips Nv Ccd-beeldopneeminrichting.
NL8603007A (nl) * 1986-11-27 1988-06-16 Philips Nv Ladingsgekoppelde inrichting.
GB2209895B (en) * 1987-09-16 1991-09-25 Philips Electronic Associated A circuit arrangement for storing sampled analogue electrical currents
JPH02105398A (ja) * 1988-08-29 1990-04-17 Philips Gloeilampenfab:Nv 駆動シフトレジスタ
JPH0271684A (ja) * 1988-09-06 1990-03-12 Mitsubishi Electric Corp 固体撮像デバイス駆動装置
EP0364038A1 (en) * 1988-10-13 1990-04-18 Koninklijke Philips Electronics N.V. Driving clock waveform for solid-state image sensors
US4862275A (en) * 1988-10-27 1989-08-29 Eastman Kodak Company Readout of charge packets from area imager CCD using an inverter-chain shift register
DE10142675A1 (de) * 2001-08-31 2003-04-03 Infineon Technologies Ag Steuerregister

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB299480I5 (es) * 1972-10-20
US3913077A (en) * 1974-04-17 1975-10-14 Hughes Aircraft Co Serial-parallel-serial ccd memory with interlaced storage
US3911290A (en) * 1974-06-10 1975-10-07 Ibm N-phase bucket brigade optical scanner
DE2430349C3 (de) * 1974-06-25 1979-05-03 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Verzögerungsanordnung nach dem Prinzip der Ladungsverschiebeschaltungen
US3967254A (en) * 1974-11-18 1976-06-29 Rca Corporation Charge transfer memory
DE2543023C3 (de) * 1975-09-26 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Speicheranordnung mit Bausteinen aus Ladungsverschiebespeichern
US4178614A (en) * 1978-08-24 1979-12-11 Rca Corporation Readout of a densely packed CCD
JPS5984575A (ja) * 1982-11-08 1984-05-16 Hitachi Ltd 固体撮像素子
NL8300366A (nl) * 1983-02-01 1984-09-03 Philips Nv Beeldopneeminrichting.
GB8314300D0 (en) * 1983-05-24 1983-06-29 Gen Electric Co Plc Image sensors
US4569067A (en) * 1983-08-04 1986-02-04 Motorola, Inc. Dual master shift register bit
US4595845A (en) * 1984-03-13 1986-06-17 Mostek Corporation Non-overlapping clock CMOS circuit with two threshold voltages
FR2566871B1 (fr) * 1984-06-27 1986-12-19 Pont A Mousson Joint d'etancheite pour vanne a obturateur rotatif et son procede de fabrication

Also Published As

Publication number Publication date
CA1243112A (en) 1988-10-11
ATE44848T1 (de) 1989-08-15
NL8401311A (nl) 1985-11-18
JPS60239058A (ja) 1985-11-27
US4677650A (en) 1987-06-30
EP0161023A1 (en) 1985-11-13
SG88690G (en) 1990-12-21
EP0161023B1 (en) 1989-07-19
DE3571730D1 (en) 1989-08-24
ES8702739A1 (es) 1986-12-16
AU4161285A (en) 1985-10-31
AU581127B2 (en) 1989-02-09

Similar Documents

Publication Publication Date Title
EP0369716A3 (en) Amplifying circuit
KR860009427A (ko) 2-위상 클록신호 공급 쉬프트 레지스터형 반도체 메모리장치
EP0372649A3 (en) Integrator circuit
ES542409A0 (es) "un dispositivo semiconductor acoplado en carga"
EP0895356A3 (de) Signalwechsel-Erkennungsschaltung
IE822816L (en) Charge-coupled device
JPS54128382A (en) Tuning signal intensity detecting circuit
UA15567A (uk) Пристрій для управліhhя іhтегральhим модулем
GB1229349A (es)
KR910017825A (ko) 화상판독장치
US4083045A (en) Mos analog to digital converter
JPS56141566A (en) Voltage detecting circuit
JP2534717B2 (ja) クランプ回路
US4717837A (en) Sample and hold network
JPS5323291A (en) Voltage converter circuit
SU627460A1 (ru) Токовый элемент
JPS57146343A (en) Data transmission circuit
SU1070578A1 (ru) Устройство дл считывани информации
JPS54116166A (en) Data conversion circuit
JPS57157556A (en) Amplifying circuit
JPS579168A (en) Picture read-in system
JPS6436260A (en) Picture reader
JPS5568729A (en) Input circuit with input level decision
JPS6459533A (en) Switched capacitor adder
JPS56115027A (en) Signal converter

Legal Events

Date Code Title Description
MM4A Patent lapsed

Effective date: 19960506