ES243519A1 - A semiconductor device (Machine-translation by Google Translate, not legally binding) - Google Patents
A semiconductor device (Machine-translation by Google Translate, not legally binding)Info
- Publication number
- ES243519A1 ES243519A1 ES0243519A ES243519A ES243519A1 ES 243519 A1 ES243519 A1 ES 243519A1 ES 0243519 A ES0243519 A ES 0243519A ES 243519 A ES243519 A ES 243519A ES 243519 A1 ES243519 A1 ES 243519A1
- Authority
- ES
- Spain
- Prior art keywords
- collector
- base region
- region
- semiconductor device
- translation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
Un dispositivo semiconductor que comprende una región de base de un material semiconductor cristalino de un determinado tipo de conductividad, un electrodo emisor en contacto rectificador con una parte de dicha región de base, y una región de colector de un tipo de conductividad opuesto al de dicha región de base y en contacto rectificador con otra parte de dicha región de base; caracterizado por tener un electrodo colector en contacto con dicha región de colector, siendo dicho electrodo colector respondiente a reducidas corrientes de colector para captar portadores de carga minoritarios con respecto a dicha región de base, y respondiente a corrientes de colector mayores que dichas corrientes reducidas inyectando portadores de carga mayoritarios con respecto a dicha región de base, en dicha región de colector.A semiconductor device comprising a base region of a crystalline semiconductor material of a certain type of conductivity, an emitting electrode in rectifying contact with a part of said base region, and a collector region of a type of conductivity opposite to that of said base region and in rectifying contact with another part of said base region; characterized by having a collector electrode in contact with said collector region, said collector electrode being responsive to reduced collector currents to capture minority charge carriers with respect to said base region, and responsive to collector currents greater than said reduced currents by injecting majority charge carriers with respect to said base region, in said collector region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES0243519A ES243519A1 (en) | 1958-08-08 | 1958-08-08 | A semiconductor device (Machine-translation by Google Translate, not legally binding) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ES0243519A ES243519A1 (en) | 1958-08-08 | 1958-08-08 | A semiconductor device (Machine-translation by Google Translate, not legally binding) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES243519A1 true ES243519A1 (en) | 1959-01-01 |
Family
ID=34447183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES0243519A Expired ES243519A1 (en) | 1958-08-08 | 1958-08-08 | A semiconductor device (Machine-translation by Google Translate, not legally binding) |
Country Status (1)
| Country | Link |
|---|---|
| ES (1) | ES243519A1 (en) |
-
1958
- 1958-08-08 ES ES0243519A patent/ES243519A1/en not_active Expired
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