GB878265A - A transistor - Google Patents
A transistorInfo
- Publication number
- GB878265A GB878265A GB38257/59A GB3825759A GB878265A GB 878265 A GB878265 A GB 878265A GB 38257/59 A GB38257/59 A GB 38257/59A GB 3825759 A GB3825759 A GB 3825759A GB 878265 A GB878265 A GB 878265A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- base
- nov
- transistor
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
878,265. Transistors. LICENTIA PATENTVERWALTUNGS-G.m.b.H. Nov. 11, 1959 [Nov. 12, 1958], No. 38257/59. Class 37. In a transistor where E, Fig. 1, is the emitter, K the collector, B the base, 2 a PP + or NN + junction and 3 and 4 are PN junctions, the dimensions a, band c shown have the following relationship : a # b # c. The emitter and base electrodes may be annular and an additional base electrode may be provided within an annular emitter. In Fig. 5 where the collector K and the base electrodes B, B<1> overlap, E being the emitting electrode, then a # b # c<1>. In Fig. 6 where the surface contacted by the emitter E and base B is stepped or bevelled, a = b = c.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL31695A DE1105522B (en) | 1958-11-12 | 1958-11-12 | Transistor with a disk-shaped semiconductor body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB878265A true GB878265A (en) | 1961-09-27 |
Family
ID=7265655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB38257/59A Expired GB878265A (en) | 1958-11-12 | 1959-11-11 | A transistor |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1105522B (en) |
| GB (1) | GB878265A (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1103544A (en) * | 1953-05-25 | 1955-11-03 | Rca Corp | Semiconductor devices, and method of making same |
| BE530566A (en) * | 1953-07-22 | |||
| BE531626A (en) * | 1953-09-04 | |||
| BE539938A (en) * | 1954-07-21 | |||
| US3081421A (en) * | 1954-08-17 | 1963-03-12 | Gen Motors Corp | Unipolar transistor |
| FR1162015A (en) * | 1955-12-08 | 1958-09-08 | Philips Nv | Transistron |
| NL216645A (en) * | 1956-04-26 |
-
1958
- 1958-11-12 DE DEL31695A patent/DE1105522B/en active Pending
-
1959
- 1959-11-11 GB GB38257/59A patent/GB878265A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1105522B (en) | 1961-04-27 |
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