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EP1346422A1 - Organic field-effect transistor, method for structuring an ofet and integrated circuit - Google Patents

Organic field-effect transistor, method for structuring an ofet and integrated circuit

Info

Publication number
EP1346422A1
EP1346422A1 EP01999978A EP01999978A EP1346422A1 EP 1346422 A1 EP1346422 A1 EP 1346422A1 EP 01999978 A EP01999978 A EP 01999978A EP 01999978 A EP01999978 A EP 01999978A EP 1346422 A1 EP1346422 A1 EP 1346422A1
Authority
EP
European Patent Office
Prior art keywords
layer
ofet
structuring
organic
functional polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01999978A
Other languages
German (de)
French (fr)
Inventor
Adolf Bernds
Wolfgang Clemens
Peter Haring
Heinrich Kurz
Borislav Vratzov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Amo GmbH
Original Assignee
Siemens AG
Amo GmbH
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Amo GmbH, Siemens Corp filed Critical Siemens AG
Publication of EP1346422A1 publication Critical patent/EP1346422A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer

Definitions

  • the invention relates to an organic field-effect transistor, a method for structuring an OFET and an integrated circuit with improved structuring of the functional polymer layers.
  • Organic integrated circuits based on OFETs are used for microelectronic mass applications and disposable products such as identification and product "tags".
  • a "tag” is e.g. an electronic bar code as it is attached to goods or on suitcases.
  • OFETs have a wide range of uses as RFID tags: radio frequency identification tags that do not only have to be arranged on the surface. OFETs for these applications can do without the excellent performance of silicon technology, but this should ensure low manufacturing costs and mechanical flexibility.
  • the components such as Electronic bar codes are typically one-way products and are only economically interesting if they are manufactured in inexpensive processes.
  • the structured layer can only be structured with other known methods (such as printing) in such a way that the length 1 is the distance between
  • Designated source and drain electrode and thus represents a measure of the power density of the OFET is at least 30 to 50 microns. However, lengths 1 of less than 10 ⁇ m are aimed for, so that apart from the elaborate lithography method, currently no structuring method seems sensible.
  • the object of the invention is therefore to provide a cost-effective and mass-production method for structuring OFETs with high resolution. Furthermore, it is an object of the invention to create a more powerful OFET, which is equipped with more structured layers, and a more compact OFET, which can be produced with a smaller distance 1.
  • the invention relates to an organic field-effect transistor (OFET), comprising at least the following layers on a substrate: an organic semiconductor layer between and above at least one source and at least one drain electrode which are made of a conductive organic material, an organic insulation layer over the semiconducting layer and an organic conductor layer, the conductor layer and at least one of the other two layers being structured.
  • OFET organic field-effect transistor
  • the invention also relates to a method for structuring an OFET Squeegee at least one functional polymer into a negative form.
  • the invention relates to an integrated circuit which comprises at least one OFET, which has at least one structured conductor layer and a further structured layer.
  • a negative form is a structured layer or a part of a structured layer that contains depressions into which the functional polymer, which for example forms an electrode of an OFET or a semiconductor or an insulator layer, is filled by doctor blades.
  • the method comprises the following steps a) on a substrate or a lower layer, a, if necessary. full-surface molded layer, which is not applied to the area to be structured.
  • This molded layer is not the functional polymer (i.e. semiconducting, conductive or insulating layer), but another organic material that serves as a shape or cliché for the conductive organic electrode layer. This other organic material should have insulating properties.
  • the molding layer receives depressions corresponding to the structures by imprinting (pressing in a stamp impression with subsequent hardening by exposure), c) the functional polymer is then knife-coated into these depressions in liquid form, as a solution and / or as a melt.
  • the negative shape of the structure on the molding layer can be produced on the substrate or a lower layer by the imprint method, which is a technique which is mature in the field of electronic and microelectronic components.
  • the material of the negative form can be a UV-curing lacquer that has indentations after imprinting and exposure. Varnishes suitable for this purpose are commercially available and the method of structuring them by imprinting is known from the literature.
  • a stamp is pressed onto the uncured molded polymer, which is applied as a layer on the substrate or a lower layer, in such a way that indentations occur in the manner in which the structuring is to take place.
  • the layer provided with depressions is then hardened either thermally or by irradiation, which creates the solid molded layer into which the functional polymer can be knife-coated.
  • doctor blade method is that the difficult structuring of functional polymers is prepared by the well-established and proven imprint method. This means that a rich technical background can be used and extremely fine structures can be achieved.
  • the doctor blade method is also not material-specific. Rather, with the doctor method, polyaniline, but also any other conductive organic material, such as Polypyrrol, can be used to manufacture electrodes. Likewise, any other organic material such as Polythiophenes as semiconductors and / or polyvinylphenol as insulators are knife-coated and thus structured, that is to say the entire OFET.
  • the negative mold is removed after the functional polymer has cured, so that any difference in height between the functional polymer and the negative mold that may result from evaporation of the solvent or shrinkage is reduced.
  • the functional polymers can largely be left in their optimal consistency.
  • polyaniline as a conductive organic material has a certain viscosity with optimal conductivity. If, for example, polyaniline is to be printed and not coated, its viscosity must be based on one of the printing methods This usually means a loss in conductivity.
  • the viscosity range for doctoring is much larger than for printing, so that there is generally no need to make any changes in the viscosity of the organic material.
  • an advantage of the doctor blade method is the ability to apply thick layers.
  • the conductivity of 1 ⁇ m thick polymer electrodes is effectively higher than with the usual 0.2 ⁇ m layer thickness.
  • “Functional polymer” here means any organic, organometallic and / or inorganic material that is functionally involved in the construction of an OFET and / or an integrated circuit made up of several OFETs. These include, for example, the conductive component (eg polyaniline), the one Electrode forms the semiconducting component that the
  • organic material Everything that is based on organic material is referred to here briefly as “organic”, the term “organic material” encompassing all types of organic, organometallic and / or inorganic plastics, which are referred to in English as “plastics”, for example. These are all types of substances with the exception of classic semiconductors (germanium, silicon) and the typical metallic leads. ter. A restriction in the dogmatic sense ' to organic material as carbon-containing material is therefore not intended, rather the broad use of, for example, silicones is also contemplated. Furthermore, the term should not be restricted to polymeric or oligomeric materials, but the use of “small molecules” is also conceivable.
  • each layer of an OFET to which a layer to be structured is applied is referred to here as the “lower layer”.
  • the molding layer made of the molding polymer adjoins the “lower layer” or the substrate.
  • the shape polymer is not defined here by the term “polymer” to be in a polymeric state of aggregation; rather, this substance can also be any plastics that can be used in practice to form a negative shape.
  • Figure 1.1 shows the substrate or a lower layer 1 onto which the molding layer of the negative mold 2, for example made of a molding polymer such as a UV-curable lacquer, is applied over the entire surface, for example.
  • the molding layer 2 is embossed with a stamp 4, as in FIG. 1.2. shown, provided with depressions, so there are 2 depressions with the stamp 4, which can be made of silicon dioxide (Si0 2 ), for example, in the molded layer. While the stamp 4 impresses the depressions 12, the molding layer 2 is irradiated with UV light, as a result of which the molding polymer 2 with permanent formation of the
  • Wells 12 cures. This creates the depressions 12 in the molded layer 2, as shown in FIG. 1.3. are shown.
  • the stamp 4 is pulled out of the molding layer 2 after the embossing has ended.
  • the functional polymer 8 (for example polyaniline) is scraped into the recesses 12 using a doctor blade 9 (FIG. 1.4.).
  • Figure 1.5 you can see how in the manufacture OFET the functional polymer 8. fills the depressions 12 of the molded layer 2.
  • Figure 2 shows a further embodiment of the method in a continuous process or continuous web printing.
  • the tape made of substrate or lower layer 1 with the molded polymer 2, which can be a UV-curable but also a thermally curable lacquer.
  • This band is then subjected to 10 different work steps from left to right, as indicated by arrow 13, along several pressure rollers. First, it passes through the shadow plate 3, with which the not yet hardened molded polymer 2 is protected against radiation. Thereafter, depressions are embossed into the molded polymer 2 with the aid of the stamp roller 4, which are immediately hardened with the UV lamp 5 integrated in the stamp roller 4.
  • the direction of the arrow from FIG. 5 indicates the direction of the light cone emitted from FIG. 5.
  • the band provided with depressions 12 in the molding layer 2 then passes under a UV lamp or heater 6 for post-curing, so that a structured lacquer 7 is produced.
  • the functional polymer 8 is then knife-coated into the structured lacquer 7 with the depressions 12, so that the finished structure 11 is produced.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention relates to an organic field-effect transistor, to a method for structuring an OFET and to an integrated circuit with improved structuring of the functional polymer layers. The improved structuring is obtained by introducing, using a doctor blade, the functional polymer in the mold layer in which recesses are initially produced by imprinting.

Description

Beschreibungdescription

Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte SchaltungOrganic field-effect transistor, method for structuring an OFET and integrated circuit

Die Erfindung betrifft einen Organischen Feld-Effekt-Transistor, ein Verfahren zur Strukturierung eines OFETs und eine integrierte Schaltung mit verbesserter Strukturierung der Funktionspolymerschichten.The invention relates to an organic field-effect transistor, a method for structuring an OFET and an integrated circuit with improved structuring of the functional polymer layers.

Organische integrierte Schaltkreise (integrated plastic circuits) auf der Basis von OFETs werden für mikroelektronische Massenanwendungen und Wegwerf-Produkte wie Identifikationsund Produkt-„tags" gebraucht. Ein „tag" ist z.B. ein elektro- nischer Streifencode, wie er auf Waren angebracht wird oder auf Koffern. OFETs haben ein weites Einsatzgebiet als RFID- tags : radio frequency identification - tags, die nicht nur auf der Oberfläche angeordnet sein müssen. Bei OFETs für diese Anwendungen kann auf das excellente Betriebsverhalten der Silizium-Technologie verzichtet werden, aber dafür sollten niedrige Herstellungskosten und mechanische Flexibilität gewährleistet sein. Die Bauteile wie z.B. elektronische Strich- Kodierungen, sind typischerweise Einwegeprodukte und sind wirtschaftlich nur interessant, wenn sie in preiswerten Pro- zessen hergestellt werden.Organic integrated circuits based on OFETs are used for microelectronic mass applications and disposable products such as identification and product "tags". A "tag" is e.g. an electronic bar code as it is attached to goods or on suitcases. OFETs have a wide range of uses as RFID tags: radio frequency identification tags that do not only have to be arranged on the surface. OFETs for these applications can do without the excellent performance of silicon technology, but this should ensure low manufacturing costs and mechanical flexibility. The components such as Electronic bar codes are typically one-way products and are only economically interesting if they are manufactured in inexpensive processes.

Bisher wird, wegen der Herstellungskosten, nur die Leiterschicht des OFETs strukturiert . Die Strukturierung kann nur über einen zweistufigen Prozess („Lithographiemethode" vgl. dazu Applied Physics Letters 73(1), 1998, S.108.110 undSo far, only the OFET conductor layer has been structured due to the manufacturing costs. The structuring can only be carried out using a two-stage process (“lithography method”, cf. Applied Physics Letters 73 (1), 1998, pp. 108.110 and

Mol.Cryst.Liq. Cryst . 189,1990, S.221-225) mit zunächst vollflächiger Beschichtung und darauffolgender Strukturierung, die zudem materialspezifisch ist, bewerkstelligt werden. Mit „Materialspezifität" ist gemeint, dass der beschriebene Pro- zess mit den genannten photochemischen Komponenten einzig an dem leitfähigen organischen Material Polyanilin funktioniert. Ein anderes leitfähiges organisches Material, z.B. Polypyr- rol, lässt sich so nicht ohne weiteres auf diese Art strukturieren.Mol.Cryst.Liq. Cryst. 189, 1990, pp. 221-225) with initially full-surface coating and subsequent structuring, which is also material-specific. By "material specificity" it is meant that the described process with the named photochemical components only works on the conductive organic material polyaniline. Another conductive organic material, for example polypyr- rol, can not be easily structured in this way.

Die fehlende Strukturierung der anderen Schichten, wie zumin- dest die der halbleitenden und der isolierenden Schicht aus Funktionspolymeren, führt zu einer deutlichen Leistungssenkung der erhaltenen OFETs, darauf wird aber trotzdem aus Kostengründen verzichtet . Die strukturierte Schicht kann mit anderen bekannten Verfahren (wie z.B. Drucken) nur so struktu- riert werden, dass die Länge 1, die den Abstand zwischenThe lack of structuring of the other layers, such as at least that of the semiconducting and insulating layers made of functional polymers, leads to a significant reduction in the performance of the OFETs obtained, but is nevertheless dispensed with for cost reasons. The structured layer can only be structured with other known methods (such as printing) in such a way that the length 1 is the distance between

Source und Drain Elektrode bezeichnet und damit ein Maß für die Leistungsdichte des OFETs darstellt zumindest 30 bis 50 μm beträgt. Angestrebt werden aber Längen 1 von unter 10 μm, so dass außer der aufwendigen Lithographie-Methode mo- entan keine Strukturierungsmethode sinnvoll erscheint.Designated source and drain electrode and thus represents a measure of the power density of the OFET is at least 30 to 50 microns. However, lengths 1 of less than 10 μm are aimed for, so that apart from the elaborate lithography method, currently no structuring method seems sensible.

Aufgabe der Erfindung ist daher ein kostengünstiges und massenfertigungstaugliches Verfahren zur Strukturierung von OFETs mit hoher Auflösung zur Verfügung zu stellen. Weiterhin ist Aufgabe der Erfindung, einen leistungsstärkeren, weil mit mehr strukturierten Schichten ausgestatteten sowie einen kompakteren OFET zu schaffen, der mit einem geringeren Abstand 1 herstellbar ist.The object of the invention is therefore to provide a cost-effective and mass-production method for structuring OFETs with high resolution. Furthermore, it is an object of the invention to create a more powerful OFET, which is equipped with more structured layers, and a more compact OFET, which can be produced with a smaller distance 1.

Gegenstand der Erfindung ist ein Organischer Feld-Effekt- Transistor (OFET) , zumindest folgende Schichten auf einem Substrat umfassend: eine organische Halbleiterschicht zwischen und über zumindest einer Source- und zumindest einer Drain-Elek- trode, die aus einem leitenden organischen Material sind, eine organische Isolationsschicht über der halbleitenden Schicht und eine organische Leiterschicht, wobei die Leiterschicht und zumindest eine der beiden anderen Schichten strukturiert ist. Außerdem ist Gegenstand der Erfindung ein Verfahren zur Strukturierung eines OFETs durch Rakeln von zumindest einem Funktionspolymer in eine Negativ- Form. Schließlich ist Gegenstand der Erfindung eine integrierte Schaltung, die zumindest einen OFET, der zumindest eine strukturierte Leiterschicht und eine weitere struktu- rierte Schicht hat, umfasst.The invention relates to an organic field-effect transistor (OFET), comprising at least the following layers on a substrate: an organic semiconductor layer between and above at least one source and at least one drain electrode which are made of a conductive organic material, an organic insulation layer over the semiconducting layer and an organic conductor layer, the conductor layer and at least one of the other two layers being structured. The invention also relates to a method for structuring an OFET Squeegee at least one functional polymer into a negative form. Finally, the invention relates to an integrated circuit which comprises at least one OFET, which has at least one structured conductor layer and a further structured layer.

~ Als Negativ-Form wird eine strukturierte Schicht oder ein Teil einer strukturierten Schicht bezeichnet, die Vertiefungen enthält, in die das Funktionspolymer, das z.B. eine Elektrode eines OFETs oder eine Halbleiter- oder eine Isolatorschicht bildet, durch Rakeln eingefüllt wird. ~ A negative form is a structured layer or a part of a structured layer that contains depressions into which the functional polymer, which for example forms an electrode of an OFET or a semiconductor or an insulator layer, is filled by doctor blades.

Das Verfahren umfasst folgende Arbeitsschritteϊ a) auf einem Substrat oder einer unteren Schicht wird eine, ggf . vollflächige Formschicht, die nicht auf den Bereich, der strukturiert werden soll beschränkt sein muss, aufgebracht. Diese Formschicht ist nicht das Funktionspolymer (also halbleitende, leitende oder isolierende Schicht) , sondern ein anderes organisches Material, das als Form oder Klischee für die leitende organische Elektrodenschicht dient. Dieses andere organische Material sollte isolierende Eigenschaften haben. b) die Formschicht erhält durch Imprinting (Eindrücken eines Stempelabdrucks mit nachfolgender Aushärtung durch Belich- ten) Vertiefungen, die den Strukturen entsprechen, c) in diese Vertiefungen wird dann das Funktionspolymer flüssig, als Lösung und/oder als Schmelze hineingerakelt .The method comprises the following steps a) on a substrate or a lower layer, a, if necessary. full-surface molded layer, which is not applied to the area to be structured. This molded layer is not the functional polymer (i.e. semiconducting, conductive or insulating layer), but another organic material that serves as a shape or cliché for the conductive organic electrode layer. This other organic material should have insulating properties. b) the molding layer receives depressions corresponding to the structures by imprinting (pressing in a stamp impression with subsequent hardening by exposure), c) the functional polymer is then knife-coated into these depressions in liquid form, as a solution and / or as a melt.

Die Negativ-Form der Struktur auf der Formschicht kann durch die Imprintmethode, die eine auf dem Gebiet der elektronischen und mikroelektronischen Bauteile ausgereifte Technik darstellt, auf dem Substrat oder einer unteren Schicht erzeugt werden. Das Material der Negativ-Form kann ein UV- härtender Lack sein, der nach Imprinting und Belichten Ver- tiefungen besitzt. Dafür geeigneten Lacke sind kommerziell erhältlich und die Methode sie durch Imprinting zu strukturieren, ist literaturbekannt. Allgemein wird bei dem Imprinting auf das ungehärtete Formpolymer, das als Schicht auf dem Substrat oder einer unteren Schicht aufgebracht ist, ein Stempel so eingedrückt, dass Vertiefungen in der Art, wie die Strukturierung erfolgen soll, entstehen. Die mit Vertiefungen versehene Schicht wird dann entweder thermisch oder durch Bestrahlung gehärtet, wodurch die feste Formschicht entsteht, in die das Funktionspo- lymer eingerakelt werden kann.The negative shape of the structure on the molding layer can be produced on the substrate or a lower layer by the imprint method, which is a technique which is mature in the field of electronic and microelectronic components. The material of the negative form can be a UV-curing lacquer that has indentations after imprinting and exposure. Varnishes suitable for this purpose are commercially available and the method of structuring them by imprinting is known from the literature. In general, a stamp is pressed onto the uncured molded polymer, which is applied as a layer on the substrate or a lower layer, in such a way that indentations occur in the manner in which the structuring is to take place. The layer provided with depressions is then hardened either thermally or by irradiation, which creates the solid molded layer into which the functional polymer can be knife-coated.

Der Vorteil der Rakel-Methode besteht darin, dass die schwierige Strukturierung von Funktionspolymeren durch die eingefahrene und bewährte Imprintmethode vorbereitet wird. Dadurch kann auf einen reichen technischen Hintergrund zurückgegriffen werden und es können extrem feine Strukturen erzielt werden. Die Rakel-Methode ist zudem nicht materialspezifisch. Mit der Rakelmethode kann vielmehr Polyanilin, aber auch jedes andere leitfähige organisches Material, wie z.B. Polypyr- rol, zur Herstellung von Elektroden eingesetzt werden. Ebenso kann damit jedes andere organische Material wie z.B. Polythi- ophen als Halbleiter und/oder Polyvinylphenol als Isolator eingerakelt und somit strukturiert werden, also der gesamte OFET.The advantage of the doctor blade method is that the difficult structuring of functional polymers is prepared by the well-established and proven imprint method. This means that a rich technical background can be used and extremely fine structures can be achieved. The doctor blade method is also not material-specific. Rather, with the doctor method, polyaniline, but also any other conductive organic material, such as Polypyrrol, can be used to manufacture electrodes. Likewise, any other organic material such as Polythiophenes as semiconductors and / or polyvinylphenol as insulators are knife-coated and thus structured, that is to say the entire OFET.

Nach einer Ausführungsform des Verfahrens wird die Negativ- Form nach erfolgter Aushärtung des Funktionspolymers entfernt, so dass ein eventuell durch Verdunstung des Lösungsmittels oder Schrumpfung entstandener Höhenunterschied zwi- sehen Funktionspolymer und Negativ-Form vermindert wird.According to one embodiment of the method, the negative mold is removed after the functional polymer has cured, so that any difference in height between the functional polymer and the negative mold that may result from evaporation of the solvent or shrinkage is reduced.

Ein anderer Ansatz, einen gegebenenfalls entstandenen Höhenunterschied zwischen Negativ-Form und Funktionspolymer zu vermeiden, liegt in der Wiederholung des Einrakelvorgangs, wodurch das Volumen der Negativ-Form einfach weiter aufgefüllt wird. In der Regel" kann man die Funktionspolymere weitgehend in ihrer optimalen Konsistenz belassen. So besitzt z.B. Polyanilin als leitfähiges organisches Material bei optimaler Leitfähigkeit eine bestimmte Viskosität. Wenn Polyanilin beispielswei- se gedruckt werden soll und nicht eingerakelt, so muss seine Viskosität auf einen der Druckmethode angepassten Wert eingestellt werden. Das bedeutet meistens Einbusse der Leitfähig- eit. Für das Rakeln ist die Viskositätsspanne ungleich größer als für das Drucken, so dass in aller Regel keine Visko- sitätsänderungen am organischen Material vorgenommen werden ' müssen.Another approach to avoid a possible difference in height between the negative mold and the functional polymer is to repeat the doctoring process, as a result of which the volume of the negative mold is simply filled up further. As a rule, " the functional polymers can largely be left in their optimal consistency. For example, polyaniline as a conductive organic material has a certain viscosity with optimal conductivity. If, for example, polyaniline is to be printed and not coated, its viscosity must be based on one of the printing methods This usually means a loss in conductivity. The viscosity range for doctoring is much larger than for printing, so that there is generally no need to make any changes in the viscosity of the organic material.

Schließlich ist ein Vorteil der Rakelmethode die Fähigkeit zu dicken Schichten. So ist z.B. die Leitfähigkeit von 1 μm di- cken Polymerelektroden effektiv höher als bei üblicherweise 0,2 μm Schichtdicke. Ein OFET mit einer Schichtdicke im Bereich von bis zu Iμm, insbesondere im Bereich von 0,3 bis 0,7 μm ist deshalb vorteilhaft.Finally, an advantage of the doctor blade method is the ability to apply thick layers. For example, the conductivity of 1 μm thick polymer electrodes is effectively higher than with the usual 0.2 μm layer thickness. An OFET with a layer thickness in the range of up to 1 μm, in particular in the range from 0.3 to 0.7 μm, is therefore advantageous.

Als „Funktionspolymer" wird hier jedes organische, metallorganische und/oder anorganische Material bezeichnet, das funk- tionell am Aufbau eines OFET und/oder einer integrierten Schaltung aus mehreren OFETs beteiligt ist. Dazu zählen beispielhaft die leitende Komponente (z.B. Polyanilin), das eine Elektrode bildet, die halbleitende Komponente, die die“Functional polymer” here means any organic, organometallic and / or inorganic material that is functionally involved in the construction of an OFET and / or an integrated circuit made up of several OFETs. These include, for example, the conductive component (eg polyaniline), the one Electrode forms the semiconducting component that the

Schicht zwischen den Elektroden bildet und die isolierende Komponente. Es sei ausdrücklich darauf hingewiesen, dass die Bezeichnung „Funktionspolymer" demnach auch nicht polymere Komponenten, wie z.B. oligomere Verbindungen, umfasst.Layer between the electrodes forms and the insulating component. It is expressly pointed out that the term “functional polymer” accordingly also includes non-polymeric components, such as, for example, oligomeric compounds.

Als „organisch" wird hier kurz alles, was „auf organischem Material basiert" bezeichnet, wobei der Begriff „organisches Material" alle Arten von organischen, metallorganischen und/oder anorganischen Kunststoffen, die im Englischen z.B. mit „plastics" bezeichnet werden, umfasst. Es handelt sich um alle Arten von Stoffen mit Ausnahme der klassischen Halbleiter (Germanium, Silizium) und der typischen metallischen Lei- ter. Eine Beschränkung im dogmatischen Sinn' auf organisches Material als Kohlenstoff-enthaltendes Material ist demnach nicht vorgesehen, vielmehr ist auch an den breiten Einsatz von z.B. Siliconen gedacht. Weiterhin soll der Term keiner Beschränkung auf polyme-re oder oligomere Materialien unterliegen, sondern es ist durchaus auch der Einsatz von „small molecules" denkbar.Everything that is based on organic material is referred to here briefly as “organic”, the term “organic material” encompassing all types of organic, organometallic and / or inorganic plastics, which are referred to in English as “plastics”, for example. These are all types of substances with the exception of classic semiconductors (germanium, silicon) and the typical metallic leads. ter. A restriction in the dogmatic sense ' to organic material as carbon-containing material is therefore not intended, rather the broad use of, for example, silicones is also contemplated. Furthermore, the term should not be restricted to polymeric or oligomeric materials, but the use of “small molecules” is also conceivable.

Als „untere Schicht" wird hier jede Schicht eines OFETs be- zeichnet, auf die eine zu strukturierende Schicht aufgebracht wird. Die Formschicht aus dem Formpolymer schließt an die „untere Schicht" oder das Substrat an. Das Formpolymer wird hier durch die Bezeichnung „polymer" auch nicht auf einen po- lymeren Aggregatszustand festgelegt, vielmehr kann es sich bei dieser Substanz auch um alle praktisch einsetzbaren Kunststoffe zur Ausbildung einer Negativ-Form handeln.Each layer of an OFET to which a layer to be structured is applied is referred to here as the “lower layer”. The molding layer made of the molding polymer adjoins the “lower layer” or the substrate. The shape polymer is not defined here by the term “polymer” to be in a polymeric state of aggregation; rather, this substance can also be any plastics that can be used in practice to form a negative shape.

Im Folgenden wird eine Ausführungsform des Verfahrens noch ' anhand von schematischen Figuren näher erläutert.An embodiment of the method is explained in more detail below with the aid of schematic figures.

Figur 1.1. zeigt das Substrat oder eine untere Schicht 1 auf die die Formschicht der Negativ-Form 2, beispielsweise aus einem Formpolymer wie einem UV-härtbaren Lack, z.B. vollflächig aufgebracht ist. Die Formschicht 2 wird mit einem Präge- Stempel 4, wie in Figur 1.2. gezeigt, mit Vertiefungen versehen, also es werden in die Formschicht 2 Vertiefungen mit dem Stempel 4, der beispielsweise aus Siliziumdioxid (Si02) sein kann, eingeprägt. Während der Stempel 4 die Vertiefungen 12 einprägt wird die Formschicht 2 mit UV-Licht bestrahlt, wo- durch das Formpolymer 2 unter permantenter Ausbildung derFigure 1.1. shows the substrate or a lower layer 1 onto which the molding layer of the negative mold 2, for example made of a molding polymer such as a UV-curable lacquer, is applied over the entire surface, for example. The molding layer 2 is embossed with a stamp 4, as in FIG. 1.2. shown, provided with depressions, so there are 2 depressions with the stamp 4, which can be made of silicon dioxide (Si0 2 ), for example, in the molded layer. While the stamp 4 impresses the depressions 12, the molding layer 2 is irradiated with UV light, as a result of which the molding polymer 2 with permanent formation of the

Vertiefungen 12 aushärtet. Dadurch entstehen die Vertiefungen 12 in der Formschicht 2, wie sie in Figur 1.3. gezeigt sind. Der Stempel 4 wird nach beendigter Prägung aus der Formschicht 2 herausgezogen. In die Vertiefungen 12 wird das Funktionspolymer 8 (z.B. Polyanilin) mit einem Rakel 9 hin- eingerakelt (Figur 1.4.). In Figur 1.5. erkennt man, wie im fertigen OFET das Funktionspolymer 8. die Vertiefungen 12 der Formschicht 2 ausfüllt.Wells 12 cures. This creates the depressions 12 in the molded layer 2, as shown in FIG. 1.3. are shown. The stamp 4 is pulled out of the molding layer 2 after the embossing has ended. The functional polymer 8 (for example polyaniline) is scraped into the recesses 12 using a doctor blade 9 (FIG. 1.4.). In Figure 1.5. you can see how in the manufacture OFET the functional polymer 8. fills the depressions 12 of the molded layer 2.

Figur 2 zeigt eine weitere Ausführungsform des Verfahrens im kontinuierlichen Prozess oder kontinuierlichen Rollendruck. Zu sehen ist das Band aus Substrat oder unterer Schicht 1 mit dem Formpolymer 2, das ein UV-härtbarer, aber auch ein t er- ..misch härtbarer Lack sein kann. Dieses Band wird nun von links nach rechts, wie durch den Pfeil 13 angedeutet, entlang mehrerer Andruckrollen 10 verschiedenen Arbeitsschritten unterworfen. Zunächst passiert es das Schattenblech 3, mit dem das noch nicht gehärtete Formpolymer 2 gegen -Bestrahlung geschützt wird. Danach werden in das Formpolymer 2 mit Hilfe der Stempelrolle 4 Vertiefungen eingeprägt, die mit der in der Stempelrolle 4 integrierten UV-Lampe 5 gleich angehärtet werden. Die von 5 ausgehende Pfeilrichtung zeigt die Richtung des Lichtkegels, der von 5 ausgestrahlt wird, an. Das mit Vertiefungen 12 in der Formschicht 2 versehene Band zieht dann unter einer UV-Lampe oder Heizung 6 zur Nachhärtung vor- bei, so dass ein strukturierter Lack 7 entsteht. In den strukturierten Lack 7 mit den Vertiefungen 12 wird dann mit dem Rakel 9 das Funktionspolymer 8 eingerakelt, so dass die _ fertige Struktur 11 entsteht. Figure 2 shows a further embodiment of the method in a continuous process or continuous web printing. What can be seen is the tape made of substrate or lower layer 1 with the molded polymer 2, which can be a UV-curable but also a thermally curable lacquer. This band is then subjected to 10 different work steps from left to right, as indicated by arrow 13, along several pressure rollers. First, it passes through the shadow plate 3, with which the not yet hardened molded polymer 2 is protected against radiation. Thereafter, depressions are embossed into the molded polymer 2 with the aid of the stamp roller 4, which are immediately hardened with the UV lamp 5 integrated in the stamp roller 4. The direction of the arrow from FIG. 5 indicates the direction of the light cone emitted from FIG. 5. The band provided with depressions 12 in the molding layer 2 then passes under a UV lamp or heater 6 for post-curing, so that a structured lacquer 7 is produced. The functional polymer 8 is then knife-coated into the structured lacquer 7 with the depressions 12, so that the finished structure 11 is produced.

Claims

Patentansprüche claims 1. Organischer Feld-Effekt-Transistor (OFET), zumindest folgende Schichten auf einem Substrat umfassend: - eine organische Halbleiterschicht zwischen und über zumindest einer Source- und zumindest einer Drain-Elektrode, die aus einem leitenden organischen Material • •■ sind, . ... . .. eine organische Isolationsschicht über der halbleitenden Schicht und eine organische Leiterschicht, wobei die.Leiters-chicht und zumindest eine der beiden anderen Schichten strukturiert ist.1. Organic field-effect transistor (OFET), comprising at least the following layers on a substrate: an organic semiconductor layer between and above at least one source and at least one drain electrode, which are made of a conductive organic material. ... .. an organic insulation layer over the semiconducting layer and an organic conductor layer, the conductor layer and at least one of the other two layers being structured. 2. OFET nach Anspruch 1 mit einem Abstand 1 zwischen Source und Drain Elektrode von kleiner 20 μm, insbesondere von kleiner 10 μm und ganz bevorzugt von 2 bis 5 μm.2. OFET according to claim 1 with a distance 1 between source and drain electrode of less than 20 microns, in particular less than 10 microns and very preferably from 2 to 5 microns. 3. OFET nach einem der Ansprüche 1 oder 2 , der eine Elektrode mit einer Schichtdicke von lμm umfasst.3. OFET according to one of claims 1 or 2, which comprises an electrode with a layer thickness of lμm. 4. Integrierte Schaltung, die zumindest einen OFET, der zumindest eine .strukturierte Leiterschicht und eine weitere strukturierte Schicht hat, umfasst. - • -4. Integrated circuit comprising at least one OFET, which has at least one structured conductor layer and a further structured layer. - • - 5. Verfahren zur Strukturierung eines OFETs durch Rakeln von zumindest einem Funktionspolymer-, in eine Negativ-Form.5. Process for structuring an OFET by knife coating at least one functional polymer into a negative form. 6. Verfahren nach Anspruch 5, folgende Arbeitsschritte umfas- send: a) auf einem Substrat oder einer unteren Schicht wird eine Formschicht für eine Negativform aufgebracht, b) diese Formschicht erhält Vertiefungen, die den Negativen der späteren Strukturen entsprechen und c) in diese Vertiefungen wird dann das Funktionspolymer hin- eingerakelt . 6. The method according to claim 5, comprising the following steps: a) a molding layer for a negative mold is applied to a substrate or a lower layer, b) this molding layer is provided with depressions which correspond to the negatives of the later structures and c) into these depressions the functional polymer is then scraped on. 7. Verfahren nach einem der Ansprüche 5 oder 6, bei dem die Formschicht nach der Strukturierung entfernt wird.7. The method according to any one of claims 5 or 6, wherein the molding layer is removed after the structuring. 8. Verfahren nach einem der Ansprüche 5 bis 7, bei dem zumin- dest zweimal das Funktionspolymer in die Vertiefungen der8. The method according to any one of claims 5 to 7, in which at least twice the functional polymer in the wells of the Formschicht eingerakelt wird.Form layer is scraped on. 9. Verfahren nach einem der Ansprüche 5 bis 8, bei dem die Vertiefungen in der Formschicht durch Imprinting erzeugt wer- den.9. The method according to any one of claims 5 to 8, in which the depressions in the molded layer are produced by imprinting. 10. Verfahren nach einem der Ansprüche 5 bis 9, das als kon- tiniuerliches Verfahren mit einem durchlaufenden Band durchgeführt wird. 10. The method according to any one of claims 5 to 9, which is carried out as a continuous process with a continuous belt.
EP01999978A 2000-12-08 2001-12-07 Organic field-effect transistor, method for structuring an ofet and integrated circuit Withdrawn EP1346422A1 (en)

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US20040063267A1 (en) 2004-04-01

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