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DE69935947D1 - Quantumwell-Detektor mit Speicheranordnung für photoangeregte Elektronen - Google Patents

Quantumwell-Detektor mit Speicheranordnung für photoangeregte Elektronen

Info

Publication number
DE69935947D1
DE69935947D1 DE69935947T DE69935947T DE69935947D1 DE 69935947 D1 DE69935947 D1 DE 69935947D1 DE 69935947 T DE69935947 T DE 69935947T DE 69935947 T DE69935947 T DE 69935947T DE 69935947 D1 DE69935947 D1 DE 69935947D1
Authority
DE
Germany
Prior art keywords
photo
storage device
quantum well
electron storage
excited electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69935947T
Other languages
English (en)
Other versions
DE69935947T2 (de
Inventor
Vincent Berger
Philippe Bois
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Publication of DE69935947D1 publication Critical patent/DE69935947D1/de
Application granted granted Critical
Publication of DE69935947T2 publication Critical patent/DE69935947T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
DE69935947T 1998-06-23 1999-06-08 Quantumwell-Detektor mit Speicheranordnung für photoangeregte Elektronen Expired - Fee Related DE69935947T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9807914 1998-06-23
FR9807914A FR2780203B1 (fr) 1998-06-23 1998-06-23 Detecteur a puits quantique avec couche de stockage des electrons photoexcites

Publications (2)

Publication Number Publication Date
DE69935947D1 true DE69935947D1 (de) 2007-06-14
DE69935947T2 DE69935947T2 (de) 2008-01-10

Family

ID=9527731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69935947T Expired - Fee Related DE69935947T2 (de) 1998-06-23 1999-06-08 Quantumwell-Detektor mit Speicheranordnung für photoangeregte Elektronen

Country Status (4)

Country Link
US (1) US6809350B1 (de)
EP (1) EP0967662B1 (de)
DE (1) DE69935947T2 (de)
FR (1) FR2780203B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3956918B2 (ja) * 2002-10-03 2007-08-08 日亜化学工業株式会社 発光ダイオード
FR2855653B1 (fr) * 2003-05-27 2005-10-21 Thales Sa Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe
FR2855654B1 (fr) * 2003-05-27 2006-03-03 Thales Sa Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires
FR2863774B1 (fr) * 2003-12-16 2006-03-03 Thales Sa Photodetecteur a concentration de champ proche
FR2934712B1 (fr) * 2008-08-01 2010-08-27 Thales Sa Procede de fabrication d'un dispositif optique d'analyse comportant un laser a cascades quantiques et un detecteur quantique.
FR2937792B1 (fr) * 2008-10-24 2011-03-18 Thales Sa Dispositif d'imagerie multispectral a base de multi-puits quantiques
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
EP2802018A3 (de) 2013-05-07 2015-04-29 L-3 Communications Cincinnati Electronics Corporation Diodenbarrieren-Infrarotdetektorvorrichtung und Übergitter-Barrierenstrukturen
FR3041815B1 (fr) * 2015-09-25 2020-02-21 Thales Photodetecteur comprenant un empilement de couches superposees

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
US4518979A (en) * 1982-06-30 1985-05-21 International Business Machines Corporation Semiconductor transistor with graded base and collector
JP2668354B2 (ja) * 1984-08-25 1997-10-27 富士通株式会社 電界効果型半導体装置
FR2640044B1 (fr) 1988-12-06 1993-02-12 Thomson Csf Dispositif de detection de rayonnements optiques
JP2804095B2 (ja) * 1989-07-10 1998-09-24 株式会社東芝 ヘテロ接合バイボーラトランジスタ
FR2653229B1 (fr) 1989-10-12 1992-01-17 Thomson Csf Detecteur capacitif d'onde electromagnetique.
FR2655434B1 (fr) 1989-12-05 1992-02-28 Thomson Csf Dispositif optique a puits quantiques et procede de realisation.
EP0478060B1 (de) * 1990-09-24 1995-12-06 Philips Electronics Uk Limited Optisch schaltbare Vorrichtung
FR2670006B1 (fr) 1990-11-29 1993-03-12 Thomson Csf Bolometre electronique a puits quantique et application a un detecteur de rayonnements.
JP2797738B2 (ja) * 1991-03-15 1998-09-17 富士通株式会社 赤外線検知装置
FR2678774B1 (fr) 1991-07-05 1998-07-10 Thomson Csf Detecteur d'ondes electromagnetiques.
FR2687480B1 (fr) * 1992-02-18 1997-08-14 France Telecom Detecteur photoelectrique a puits quantiques a detectivite amelioree.
FR2693594B1 (fr) 1992-07-07 1994-08-26 Thomson Csf Détecteur d'ondes électromagnétiques à puits quantiques.
JPH0669222A (ja) * 1992-08-17 1994-03-11 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ及びその製造方法
JPH06252176A (ja) * 1993-02-25 1994-09-09 Sony Corp 高電子移動度トランジスタ
FR2729789B1 (fr) 1993-09-10 1998-03-20 Thomson Csf Detecteur a puits quantique et procede de realisation
FR2718571B1 (fr) 1994-04-08 1996-05-15 Thomson Csf Composant hybride semiconducteur.
US5510627A (en) * 1994-06-29 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Infrared-to-visible converter
FR2726691B1 (fr) 1994-11-08 1997-01-24 Thomson Csf Photodetecteur de grande dimension et procede de realisation d'un tel photodetecteur
FR2726903B1 (fr) 1994-11-10 1996-12-06 Thomson Csf Ecartometre integre
FR2733111B1 (fr) 1995-04-11 1997-05-23 Thomson Csf Procede de detection a cycles d'integration et de lecture repartis pour camera a balayage, et barrette de detection correspondante
FR2734097B1 (fr) 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
FR2736168B1 (fr) 1995-06-30 1997-07-25 Thomson Csf Convertisseur de frequence comprenant un guide semiconducteur a heterostructure
FR2751500B1 (fr) 1996-07-16 1998-10-23 Thomson Csf Circuit de lecture de barrettes de photodetecteurs
JP3087671B2 (ja) * 1996-12-12 2000-09-11 日本電気株式会社 バイポーラトランジスタおよびその製造方法
US5953479A (en) * 1998-05-07 1999-09-14 The United States Of America As Represented By The Secretary Of The Army Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration

Also Published As

Publication number Publication date
US6809350B1 (en) 2004-10-26
FR2780203B1 (fr) 2003-07-04
FR2780203A1 (fr) 1999-12-24
DE69935947T2 (de) 2008-01-10
EP0967662A1 (de) 1999-12-29
EP0967662B1 (de) 2007-05-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee