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DE69836612D1 - Polierverfahren - Google Patents

Polierverfahren

Info

Publication number
DE69836612D1
DE69836612D1 DE69836612T DE69836612T DE69836612D1 DE 69836612 D1 DE69836612 D1 DE 69836612D1 DE 69836612 T DE69836612 T DE 69836612T DE 69836612 T DE69836612 T DE 69836612T DE 69836612 D1 DE69836612 D1 DE 69836612D1
Authority
DE
Germany
Prior art keywords
polishing process
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69836612T
Other languages
English (en)
Other versions
DE69836612T2 (de
Inventor
Seiichi Kondo
Yoshio Homma
Noriyuki Sakuma
Kenichi Takeda
Kenji Hinode
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69836612D1 publication Critical patent/DE69836612D1/de
Application granted granted Critical
Publication of DE69836612T2 publication Critical patent/DE69836612T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69836612T 1997-10-31 1998-10-30 Polierverfahren Expired - Lifetime DE69836612T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29993797A JP3371775B2 (ja) 1997-10-31 1997-10-31 研磨方法
JP29993797 1997-10-31

Publications (2)

Publication Number Publication Date
DE69836612D1 true DE69836612D1 (de) 2007-01-25
DE69836612T2 DE69836612T2 (de) 2007-10-25

Family

ID=17878748

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69836612T Expired - Lifetime DE69836612T2 (de) 1997-10-31 1998-10-30 Polierverfahren

Country Status (8)

Country Link
US (5) US6117775A (de)
EP (2) EP0913442B1 (de)
JP (1) JP3371775B2 (de)
KR (2) KR100624589B1 (de)
CN (2) CN1298508C (de)
DE (1) DE69836612T2 (de)
SG (1) SG95588A1 (de)
TW (1) TW380083B (de)

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
JP2000040679A (ja) 1998-07-24 2000-02-08 Hitachi Ltd 半導体集積回路装置の製造方法
JP2000183003A (ja) * 1998-10-07 2000-06-30 Toshiba Corp 銅系金属用研磨組成物および半導体装置の製造方法
US6143656A (en) * 1998-10-22 2000-11-07 Advanced Micro Devices, Inc. Slurry for chemical mechanical polishing of copper
SG99289A1 (en) * 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US7338908B1 (en) * 2003-10-20 2008-03-04 Novellus Systems, Inc. Method for fabrication of semiconductor interconnect structure with reduced capacitance, leakage current, and improved breakdown voltage
US6245690B1 (en) 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
JP2000228391A (ja) * 1998-11-30 2000-08-15 Canon Inc 半導体基板の精密研磨方法および装置
WO2000039844A1 (en) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
JP3033574B1 (ja) * 1999-02-15 2000-04-17 日本電気株式会社 研磨方法
JP4127926B2 (ja) 1999-04-08 2008-07-30 株式会社荏原製作所 ポリッシング方法
JP2000311876A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 配線基板の製造方法および製造装置
JP2000315666A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 半導体集積回路装置の製造方法
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4188598B2 (ja) 1999-08-13 2008-11-26 キャボット マイクロエレクトロニクス コーポレイション 停止化合物を伴う研磨系及びその使用方法
ATE405618T1 (de) * 1999-08-13 2008-09-15 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US6436302B1 (en) * 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
US6443812B1 (en) 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
JP4832690B2 (ja) * 1999-08-24 2011-12-07 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 絶縁体及び金属のｃｍｐ用組成物及びそれに関する方法
CN1161826C (zh) * 1999-08-26 2004-08-11 日立化成工业株式会社 化学机械研磨用研磨剂及研磨方法
US6376381B1 (en) * 1999-08-31 2002-04-23 Micron Technology, Inc. Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies
US6492273B1 (en) 1999-08-31 2002-12-10 Micron Technology, Inc. Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
JP4759779B2 (ja) * 1999-09-09 2011-08-31 日立化成工業株式会社 基板の研磨方法
US6620725B1 (en) * 1999-09-13 2003-09-16 Taiwan Semiconductor Manufacturing Company Reduction of Cu line damage by two-step CMP
CN1125862C (zh) * 1999-09-20 2003-10-29 长兴化学工业股份有限公司 半导体加工用化学机械研磨组合物
US6656842B2 (en) * 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
US6303506B1 (en) * 1999-09-30 2001-10-16 Infineon Technologies Ag Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process
JP3307375B2 (ja) * 1999-10-04 2002-07-24 日本電気株式会社 半導体装置の製造方法
US6435944B1 (en) 1999-10-27 2002-08-20 Applied Materials, Inc. CMP slurry for planarizing metals
US6720264B2 (en) 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
JP3439402B2 (ja) * 1999-11-05 2003-08-25 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
JP3805588B2 (ja) 1999-12-27 2006-08-02 株式会社日立製作所 半導体装置の製造方法
US6881674B2 (en) 1999-12-28 2005-04-19 Intel Corporation Abrasives for chemical mechanical polishing
JP3490038B2 (ja) * 1999-12-28 2004-01-26 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
TW572980B (en) 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6797623B2 (en) * 2000-03-09 2004-09-28 Sony Corporation Methods of producing and polishing semiconductor device and polishing apparatus
US6228771B1 (en) * 2000-03-23 2001-05-08 Infineon Technologies North America Corp. Chemical mechanical polishing process for low dishing of metal lines in semiconductor wafer fabrication
JP2001269859A (ja) 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6451697B1 (en) * 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6943113B1 (en) * 2000-05-11 2005-09-13 Infineon Technologies Ag Metal chemical polishing process for minimizing dishing during semiconductor wafer fabrication
US6858540B2 (en) * 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
JP3945964B2 (ja) * 2000-06-01 2007-07-18 株式会社ルネサステクノロジ 研磨剤、研磨方法及び半導体装置の製造方法
JP4743941B2 (ja) * 2000-06-30 2011-08-10 Ｊｓｒ株式会社 化学機械研磨用水系分散体
US6653242B1 (en) 2000-06-30 2003-11-25 Applied Materials, Inc. Solution to metal re-deposition during substrate planarization
JP3837277B2 (ja) 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
KR100338777B1 (ko) * 2000-07-22 2002-05-31 윤종용 화학 기계적 연마 이후의 구리층 부식을 방지하는 반도체장치 제조방법 및 이에 이용되는 화학 기계적 연마장치
JP2002043256A (ja) * 2000-07-27 2002-02-08 Hitachi Ltd 半導体ウエハ平坦化加工方法及び平坦化加工装置
US6872329B2 (en) 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
WO2002014014A2 (en) * 2000-08-11 2002-02-21 Rodel Holdings, Inc. Chemical mechanical planarization of metal substrates
US7192888B1 (en) 2000-08-21 2007-03-20 Micron Technology, Inc. Low selectivity deposition methods
US7220322B1 (en) 2000-08-24 2007-05-22 Applied Materials, Inc. Cu CMP polishing pad cleaning
US20020042199A1 (en) * 2000-09-20 2002-04-11 Jinru Bian Polishing by CMP for optimized planarization
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
US6503834B1 (en) * 2000-10-03 2003-01-07 International Business Machines Corp. Process to increase reliability CuBEOL structures
JP2002117670A (ja) 2000-10-04 2002-04-19 Mitsubishi Electric Corp 半導体記憶装置
US6461227B1 (en) * 2000-10-17 2002-10-08 Cabot Microelectronics Corporation Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition
US6569349B1 (en) 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6709316B1 (en) 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
KR100407296B1 (ko) * 2000-12-18 2003-11-28 주식회사 하이닉스반도체 티타늄알루미늄나이트라이드의 화학적기계적연마 방법
US6896776B2 (en) 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
WO2002051589A1 (en) * 2000-12-22 2002-07-04 Koninklijke Philips Electronics N.V. Method and apparatus for chemical-mechanical polishing (cmp) using upstream and downstream fluid dispensing means
US7012025B2 (en) * 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US6579439B1 (en) 2001-01-12 2003-06-17 Southern Industrial Chemicals, Inc. Electrolytic aluminum polishing processes
US6530824B2 (en) * 2001-03-09 2003-03-11 Rodel Holdings, Inc. Method and composition for polishing by CMP
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6627550B2 (en) 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6849547B2 (en) * 2001-04-05 2005-02-01 Speedfam Ipec Corporation Apparatus and process for polishing a workpiece
US6568997B2 (en) 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
WO2002083804A1 (en) * 2001-04-12 2002-10-24 Rodel Holdings, Inc. Polishing composition having a surfactant
KR20020083264A (ko) * 2001-04-26 2002-11-02 삼성전자 주식회사 화학적 기계적 연마용 슬러리와 그 제조방법
US6632259B2 (en) 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
JP2002368084A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体集積回路装置の製造方法
US6790768B2 (en) * 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US6592742B2 (en) 2001-07-13 2003-07-15 Applied Materials Inc. Electrochemically assisted chemical polish
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6821881B2 (en) * 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
US20040197541A1 (en) * 2001-08-02 2004-10-07 Joseph Zahka Selective electroless deposition and interconnects made therefrom
JP2003051481A (ja) * 2001-08-07 2003-02-21 Hitachi Ltd 半導体集積回路装置の製造方法
TW583731B (en) * 2001-08-23 2004-04-11 Mykrolis Corp Process, system, and liquid composition for selectively removing a metal film
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US6812193B2 (en) 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US20030077983A1 (en) * 2001-10-12 2003-04-24 International Business Machines Corporation Cleaning polish etch composition and process for a superfinished surface of a substrate
US7077880B2 (en) * 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
TW200300168A (en) * 2001-10-31 2003-05-16 Hitachi Chemical Co Ltd Polishing fluid and polishing method
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
KR100445757B1 (ko) * 2001-12-28 2004-08-25 제일모직주식회사 금속배선 연마용 슬러리 조성물
US20030134576A1 (en) * 2002-01-17 2003-07-17 Saket Chadda Method for polishing copper on a workpiece surface
US20060255016A1 (en) * 2002-01-17 2006-11-16 Novellus Systems, Inc. Method for polishing copper on a workpiece surface
JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
US7524346B2 (en) 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US6776810B1 (en) 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) * 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
KR20030070191A (ko) * 2002-02-21 2003-08-29 주식회사 동진쎄미켐 안정성 및 탄탈계 금속막에 대한 연마 속도가 우수한화학-기계적 연마 슬러리 조성물
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
JP3749867B2 (ja) * 2002-03-08 2006-03-01 株式会社東芝 アルミニウム系金属用研磨液および半導体装置の製造方法
CN1444259A (zh) * 2002-03-12 2003-09-24 株式会社东芝 半导体器件的制造方法
JP2004006628A (ja) * 2002-03-27 2004-01-08 Hitachi Ltd 半導体装置の製造方法
KR100476890B1 (ko) * 2002-04-11 2005-03-17 삼성전자주식회사 검사패턴 및 이를 이용한 화학적기계적 연마공정 제어방법
JP2003318140A (ja) * 2002-04-26 2003-11-07 Applied Materials Inc 研磨方法及び装置
US20030209523A1 (en) * 2002-05-09 2003-11-13 Applied Materials, Inc. Planarization by chemical polishing for ULSI applications
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
TWI295950B (en) * 2002-10-03 2008-04-21 Applied Materials Inc Method for reducing delamination during chemical mechanical polishing
KR100500517B1 (ko) * 2002-10-22 2005-07-12 삼성전자주식회사 반도체 웨이퍼용 ｃｍｐ 설비
US20040175942A1 (en) * 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US6936534B2 (en) * 2003-09-17 2005-08-30 Micron Technology, Inc. Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
USPP17182P3 (en) * 2003-10-02 2006-11-07 Plantas De Navarra S.A. Peach tree plant named ‘Plawhite 5’
US7427361B2 (en) * 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US7531463B2 (en) * 2003-10-20 2009-05-12 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US8372757B2 (en) * 2003-10-20 2013-02-12 Novellus Systems, Inc. Wet etching methods for copper removal and planarization in semiconductor processing
US8530359B2 (en) * 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
US7972970B2 (en) 2003-10-20 2011-07-05 Novellus Systems, Inc. Fabrication of semiconductor interconnect structure
US20050112292A1 (en) * 2003-11-25 2005-05-26 Parker Russell A. Methods for treating at least one member of a microarray structure and methods of using the same
US7465408B1 (en) * 2003-12-03 2008-12-16 Advanced Micro Devices, Inc. Solutions for controlled, selective etching of copper
US20050139292A1 (en) * 2003-12-31 2005-06-30 Suresh Ramarajan Method and apparatus for minimizing thickness-to-planarity and dishing in CMP
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
JP2005317808A (ja) * 2004-04-28 2005-11-10 Nitta Haas Inc 薄膜研磨用研磨布およびそれを用いる薄膜の研磨方法
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP4292117B2 (ja) * 2004-07-15 2009-07-08 Ｊｓｒ株式会社 化学機械研磨用水系分散体及び化学機械研磨方法
US7210988B2 (en) 2004-08-24 2007-05-01 Applied Materials, Inc. Method and apparatus for reduced wear polishing pad conditioning
JP2006080388A (ja) * 2004-09-10 2006-03-23 Nitta Haas Inc 金属研磨用組成物
JPWO2006030595A1 (ja) * 2004-09-14 2008-05-08 日立化成工業株式会社 Ｃｍｐ用研磨スラリー
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US7381646B2 (en) * 2005-08-15 2008-06-03 Chartered Semiconductor Manufacturing, Ltd. Method for using a Cu BEOL process to fabricate an integrated circuit (IC) originally having an al design
US7442637B2 (en) * 2005-08-15 2008-10-28 Chartered Semiconductor Manufacturing, Ltd Method for processing IC designs for different metal BEOL processes
US7764377B2 (en) 2005-08-22 2010-07-27 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
CN105773398B (zh) * 2005-08-22 2019-11-19 应用材料公司 基于光谱的监测化学机械研磨的装置及方法
US7605082B1 (en) 2005-10-13 2009-10-20 Novellus Systems, Inc. Capping before barrier-removal IC fabrication method
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
WO2007094869A2 (en) 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
US7226345B1 (en) 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
WO2007077886A1 (ja) 2005-12-27 2007-07-12 Hitachi Chemical Co., Ltd. 金属用研磨液及び被研磨膜の研磨方法
US20070151866A1 (en) * 2006-01-05 2007-07-05 Applied Materials, Inc. Substrate polishing with surface pretreatment
US20070158207A1 (en) * 2006-01-06 2007-07-12 Applied Materials, Inc. Methods for electrochemical processing with pre-biased cells
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
EP2022080A2 (de) * 2006-04-26 2009-02-11 Koninklijke Philips Electronics N.V. Verfahren zur herstellung einer halbleitervorrichtung, halbleitervorrichtung daraus und aufschlämmung, die sich für ein derartiges verfahren eignet
JP5168966B2 (ja) * 2007-03-20 2013-03-27 富士通セミコンダクター株式会社 研磨方法及び研磨装置
KR101472617B1 (ko) 2007-07-30 2014-12-15 히타치가세이가부시끼가이샤 금속용 연마액 및 연마 방법
JP2009088486A (ja) * 2007-08-29 2009-04-23 Applied Materials Inc 高スループット低形状銅ｃｍｐ処理
KR100949250B1 (ko) * 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8652350B2 (en) * 2008-02-27 2014-02-18 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
KR20120080595A (ko) * 2009-09-02 2012-07-17 노벨러스 시스템즈, 인코포레이티드 감소된 등방성 에칭제 물질 소비 및 폐기물 발생
US8603862B2 (en) * 2010-05-14 2013-12-10 International Business Machines Corporation Precise-aligned lock-and-key bonding structures
TWI490290B (zh) * 2010-12-23 2015-07-01 Anji Microelectronics Co Ltd Chemical mechanical polishing solution
JP5858333B2 (ja) * 2010-12-24 2016-02-10 日立金属株式会社 金属線材の熱処理装置
JP5808201B2 (ja) * 2011-09-01 2015-11-10 株式会社ディスコ 砥粒埋め込み装置、ラッピング装置及びラッピング方法
JP2014027012A (ja) * 2012-07-24 2014-02-06 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
CN102909639B (zh) * 2012-10-30 2016-02-24 上海新傲科技股份有限公司 半导体衬底的表面处理方法
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
CN103646866B (zh) * 2013-11-29 2016-03-02 上海华力微电子有限公司 化学机械抛光装置及方法
JP6206360B2 (ja) * 2014-08-29 2017-10-04 株式会社Sumco シリコンウェーハの研磨方法
KR101677248B1 (ko) 2015-04-24 2016-11-17 (주) 진우테크 웨이퍼 연마장치
KR101693278B1 (ko) * 2015-09-25 2017-01-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
CN105922084B (zh) * 2016-07-11 2017-11-28 安徽三联学院 一种对金属表面涂层的精磨工艺
CN110509114B (zh) * 2019-08-14 2021-01-05 大连理工大学 一种钨合金的研磨抛光方法
US20220017780A1 (en) * 2020-07-20 2022-01-20 Taiwan Semiconductor Manufacturing Company Ltd. Composition and method for polishing and integrated circuit
CN112067643A (zh) * 2020-09-08 2020-12-11 宁波江丰电子材料股份有限公司 一种高纯铝靶材组件焊接扩散层sem检测的制样方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
EP0273055B1 (de) * 1986-04-05 1992-01-29 Nagase Iron Works Co., Ltd. Vorrichtung und verfahren zum schleifen von giessformen
EP0265578A1 (de) * 1986-10-30 1988-05-04 Jan-Olof Eriksson Zusammensetzung eines nicht abschleifenden Polier- und Reinigungsmittels und Verfahren zu ihrer Herstellung
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
JP2580939B2 (ja) 1992-10-15 1997-02-12 日本電気株式会社 埋め込み金属配線の形成方法
JPH0794455A (ja) 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd 配線の形成方法
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP2585963B2 (ja) 1993-12-10 1997-02-26 日本エクシード株式会社 化合物半導体のための研磨液及びこれを用いた化合物半導体の研磨方法
US5575885A (en) 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3556978B2 (ja) * 1993-12-14 2004-08-25 株式会社東芝 銅系金属の研磨方法
JP2781954B2 (ja) * 1994-03-04 1998-07-30 メック株式会社 銅および銅合金の表面処理剤
JP2743823B2 (ja) * 1994-03-25 1998-04-22 日本電気株式会社 半導体基板のウエット処理方法
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5674443A (en) * 1994-09-26 1997-10-07 Skc Limited Process for the preparation of polyester film
JP2820059B2 (ja) * 1995-03-24 1998-11-05 トヨタ自動車株式会社 研摩装置
US5695661A (en) * 1995-06-07 1997-12-09 Micron Display Technology, Inc. Silicon dioxide etch process which protects metal
US5840629A (en) * 1995-12-14 1998-11-24 Sematech, Inc. Copper chemical mechanical polishing slurry utilizing a chromate oxidant
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5733176A (en) * 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
US5866031A (en) * 1996-06-19 1999-02-02 Sematech, Inc. Slurry formulation for chemical mechanical polishing of metals
US5875507A (en) * 1996-07-15 1999-03-02 Oliver Design, Inc. Wafer cleaning apparatus
AU3661997A (en) * 1996-07-25 1998-02-20 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5932486A (en) * 1996-08-16 1999-08-03 Rodel, Inc. Apparatus and methods for recirculating chemical-mechanical polishing of semiconductor wafers
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5972792A (en) 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6954997B2 (en) * 2003-01-28 2005-10-18 Kor Hockey Ltd. Apparatus, system, and method for engaging toes in footwear

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JP3371775B2 (ja) 2003-01-27
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US7132367B2 (en) 2006-11-07
KR100724023B1 (ko) 2007-06-04
US6596638B1 (en) 2003-07-22
US20070167015A1 (en) 2007-07-19
EP1760127A2 (de) 2007-03-07
EP0913442A3 (de) 2002-03-06
JPH11135466A (ja) 1999-05-21
US20050074967A1 (en) 2005-04-07
CN1216727A (zh) 1999-05-19
CN1298508C (zh) 2007-02-07
US20070029285A1 (en) 2007-02-08
EP0913442B1 (de) 2006-12-13
US6117775A (en) 2000-09-12
KR100624589B1 (ko) 2006-11-30
TW380083B (en) 2000-01-21
KR20050101128A (ko) 2005-10-20
DE69836612T2 (de) 2007-10-25
US7279425B2 (en) 2007-10-09
US7563716B2 (en) 2009-07-21

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