DE69835512D1 - Organohydridosiloxanharze mit hohem organischen anteil - Google Patents
Organohydridosiloxanharze mit hohem organischen anteilInfo
- Publication number
- DE69835512D1 DE69835512D1 DE69835512T DE69835512T DE69835512D1 DE 69835512 D1 DE69835512 D1 DE 69835512D1 DE 69835512 T DE69835512 T DE 69835512T DE 69835512 T DE69835512 T DE 69835512T DE 69835512 D1 DE69835512 D1 DE 69835512D1
- Authority
- DE
- Germany
- Prior art keywords
- organic component
- high organic
- resins high
- organohydridosiloxane resins
- organohydridosiloxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229920005989 resin Polymers 0.000 title 1
- 239000011347 resin Substances 0.000 title 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4448197P | 1997-04-21 | 1997-04-21 | |
| US44481P | 1997-04-21 | ||
| US09/044,798 US6143855A (en) | 1997-04-21 | 1998-03-20 | Organohydridosiloxane resins with high organic content |
| US44798 | 1998-03-20 | ||
| PCT/US1998/006489 WO1998047944A1 (en) | 1997-04-21 | 1998-04-02 | Organohydridosiloxane resins with high organic content |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69835512D1 true DE69835512D1 (de) | 2006-09-21 |
| DE69835512T2 DE69835512T2 (de) | 2007-04-05 |
Family
ID=26721611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69835512T Expired - Fee Related DE69835512T2 (de) | 1997-04-21 | 1998-04-02 | Organohydridosiloxanharze mit hohem organischen anteil |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6143855A (de) |
| EP (1) | EP0977797B1 (de) |
| JP (1) | JP2000510520A (de) |
| KR (1) | KR100586370B1 (de) |
| CN (1) | CN1252140C (de) |
| AU (1) | AU6794098A (de) |
| DE (1) | DE69835512T2 (de) |
| TW (2) | TWI276651B (de) |
| WO (1) | WO1998047944A1 (de) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3977896B2 (ja) * | 1997-05-28 | 2007-09-19 | 新日本製鐵株式会社 | 低誘電率材料 |
| US6962727B2 (en) * | 1998-03-20 | 2005-11-08 | Honeywell International Inc. | Organosiloxanes |
| US6177199B1 (en) * | 1999-01-07 | 2001-01-23 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with low organic content |
| US6218020B1 (en) * | 1999-01-07 | 2001-04-17 | Alliedsignal Inc. | Dielectric films from organohydridosiloxane resins with high organic content |
| JP2000143810A (ja) * | 1998-11-18 | 2000-05-26 | Dow Corning Asia Ltd | 水素シルセスキオキサン樹脂の製造方法 |
| AU2497600A (en) * | 1999-01-07 | 2000-07-24 | Allied-Signal Inc. | Dielectric films from organohydridosiloxane resins |
| US6509259B1 (en) | 1999-06-09 | 2003-01-21 | Alliedsignal Inc. | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices |
| US6318124B1 (en) * | 1999-08-23 | 2001-11-20 | Alliedsignal Inc. | Nanoporous silica treated with siloxane polymers for ULSI applications |
| KR100683428B1 (ko) * | 1999-10-25 | 2007-02-20 | 다우 코닝 코포레이션 | 용액 용해도와 안정성이 우수한 실리콘 수지 조성물 |
| US6143360A (en) * | 1999-12-13 | 2000-11-07 | Dow Corning Corporation | Method for making nanoporous silicone resins from alkylydridosiloxane resins |
| US20050003215A1 (en) * | 2000-02-16 | 2005-01-06 | Nigel Hacker | Synthesis of siloxane resins |
| US20030176614A1 (en) * | 2000-06-30 | 2003-09-18 | Nigel Hacker | Organohydridosiloxane resins with high organic content |
| US7115531B2 (en) * | 2000-08-21 | 2006-10-03 | Dow Global Technologies Inc. | Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices |
| US6399210B1 (en) * | 2000-11-27 | 2002-06-04 | Dow Corning Corporation | Alkoxyhydridosiloxane resins |
| US6576345B1 (en) * | 2000-11-30 | 2003-06-10 | Novellus Systems Inc | Dielectric films with low dielectric constants |
| GB2372996A (en) * | 2001-03-10 | 2002-09-11 | Dow Corning | Preparation of silicone resins |
| KR20040011494A (ko) * | 2001-04-06 | 2004-02-05 | 허니웰 인터내셔날 인코포레이티드 | 저유전율 재료 및 이의 제조 방법 |
| US6596834B2 (en) * | 2001-09-12 | 2003-07-22 | Dow Corning Corporation | Silicone resins and porous materials produced therefrom |
| DE10162443A1 (de) * | 2001-12-19 | 2003-07-03 | Bayer Ag | Verfahren zur Herstellung von dielektrischen Schichten unter Verwendung multifunktioneller Carbosilane |
| US20040247896A1 (en) * | 2001-12-31 | 2004-12-09 | Paul Apen | Organic compositions |
| US6737117B2 (en) | 2002-04-05 | 2004-05-18 | Dow Corning Corporation | Hydrosilsesquioxane resin compositions having improved thin film properties |
| JP2004161877A (ja) * | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
| JP2004161875A (ja) * | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁間膜及び半導体装置 |
| JP2004161876A (ja) * | 2002-11-13 | 2004-06-10 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
| JP3884699B2 (ja) * | 2002-11-13 | 2007-02-21 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
| JP2004269693A (ja) * | 2003-03-10 | 2004-09-30 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物及びその製造方法、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| JP4139710B2 (ja) * | 2003-03-10 | 2008-08-27 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| JP2004292641A (ja) * | 2003-03-27 | 2004-10-21 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| JP2004307693A (ja) * | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| JP2004307694A (ja) * | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。 |
| JP2004307692A (ja) * | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置 |
| KR100507967B1 (ko) * | 2003-07-01 | 2005-08-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
| US20050215713A1 (en) * | 2004-03-26 | 2005-09-29 | Hessell Edward T | Method of producing a crosslinked coating in the manufacture of integrated circuits |
| US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
| US20060071300A1 (en) * | 2004-09-30 | 2006-04-06 | Haverty Michael G | Dielectric material having carborane derivatives |
| US20060128163A1 (en) * | 2004-12-14 | 2006-06-15 | International Business Machines Corporation | Surface treatment of post-rie-damaged p-osg and other damaged materials |
| CN101072813B (zh) * | 2004-12-17 | 2011-06-08 | 陶氏康宁公司 | 硅氧烷树脂涂料 |
| CN100379801C (zh) * | 2005-01-13 | 2008-04-09 | 南京大学 | 笼型多聚物制孔超低介电氧化硅薄膜及其制备方法 |
| JP2006291160A (ja) * | 2005-03-14 | 2006-10-26 | Fuji Photo Film Co Ltd | 膜形成用組成物、それを用いた絶縁膜および電子デバイス |
| CN101371196B (zh) * | 2006-02-13 | 2012-07-04 | 陶氏康宁公司 | 抗反射涂料 |
| US20070212886A1 (en) * | 2006-03-13 | 2007-09-13 | Dong Seon Uh | Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions |
| US20080173541A1 (en) * | 2007-01-22 | 2008-07-24 | Eal Lee | Target designs and related methods for reduced eddy currents, increased resistance and resistivity, and enhanced cooling |
| US8702919B2 (en) | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
| US20090111925A1 (en) * | 2007-10-31 | 2009-04-30 | Burnham Kikue S | Thermal interface materials, methods of production and uses thereof |
| US8318258B2 (en) | 2008-01-08 | 2012-11-27 | Dow Corning Toray Co., Ltd. | Silsesquioxane resins |
| KR20100114075A (ko) * | 2008-01-15 | 2010-10-22 | 다우 코닝 코포레이션 | 실세스퀴옥산 수지 |
| KR20100134578A (ko) * | 2008-03-04 | 2010-12-23 | 다우 코닝 코포레이션 | 실세스퀴옥산 수지 |
| WO2009111121A2 (en) * | 2008-03-05 | 2009-09-11 | Dow Corning Corporation | Silsesquioxane resins |
| JP5344869B2 (ja) * | 2008-08-13 | 2013-11-20 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | アルカリ可溶性シルセスキオキサンの製造方法 |
| WO2010068336A1 (en) | 2008-12-10 | 2010-06-17 | Dow Corning Corporation | Silsesquioxane resins |
| JP5632387B2 (ja) * | 2008-12-10 | 2014-11-26 | ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ | 湿式エッチング可能な反射防止膜 |
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| WO2012058798A1 (en) | 2010-11-02 | 2012-05-10 | Henkel China Co. Ltd. | Hydrosilicone resin and preparation process thereof |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| CN107075119B (zh) * | 2014-09-30 | 2021-01-05 | 株式会社钟化 | 硅氧烷树脂的制造方法 |
| US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| JP6875063B2 (ja) | 2015-10-16 | 2021-05-19 | 信越化学工業株式会社 | ヒドロシリル基含有有機ケイ素樹脂の製造方法 |
| CN109880583B (zh) * | 2019-01-10 | 2021-06-22 | 北京康美特科技股份有限公司 | 一种导热有机硅粘合剂及其固化物和led元件 |
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-
1998
- 1998-03-20 US US09/044,798 patent/US6143855A/en not_active Expired - Fee Related
- 1998-04-02 CN CNB988064111A patent/CN1252140C/zh not_active Expired - Fee Related
- 1998-04-02 EP EP98913372A patent/EP0977797B1/de not_active Expired - Lifetime
- 1998-04-02 DE DE69835512T patent/DE69835512T2/de not_active Expired - Fee Related
- 1998-04-02 JP JP10546057A patent/JP2000510520A/ja active Pending
- 1998-04-02 WO PCT/US1998/006489 patent/WO1998047944A1/en active IP Right Grant
- 1998-04-02 KR KR19997009749A patent/KR100586370B1/ko not_active IP Right Cessation
- 1998-04-02 AU AU67940/98A patent/AU6794098A/en not_active Abandoned
- 1998-04-13 TW TW092136711A patent/TWI276651B/zh not_active IP Right Cessation
- 1998-04-13 TW TW087105576A patent/TW577906B/zh not_active IP Right Cessation
-
2000
- 2000-06-30 US US09/611,528 patent/US6512071B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000510520A (ja) | 2000-08-15 |
| TW577906B (en) | 2004-03-01 |
| TWI276651B (en) | 2007-03-21 |
| US6512071B1 (en) | 2003-01-28 |
| CN1252140C (zh) | 2006-04-19 |
| TW200407357A (en) | 2004-05-16 |
| CN1261384A (zh) | 2000-07-26 |
| EP0977797A1 (de) | 2000-02-09 |
| US6143855A (en) | 2000-11-07 |
| KR100586370B1 (ko) | 2006-06-08 |
| AU6794098A (en) | 1998-11-13 |
| EP0977797B1 (de) | 2006-08-09 |
| WO1998047944A1 (en) | 1998-10-29 |
| KR20010020179A (ko) | 2001-03-15 |
| DE69835512T2 (de) | 2007-04-05 |
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