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JPS55111148A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55111148A
JPS55111148A JP1847779A JP1847779A JPS55111148A JP S55111148 A JPS55111148 A JP S55111148A JP 1847779 A JP1847779 A JP 1847779A JP 1847779 A JP1847779 A JP 1847779A JP S55111148 A JPS55111148 A JP S55111148A
Authority
JP
Japan
Prior art keywords
water
metallic film
film region
electrode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1847779A
Other languages
Japanese (ja)
Other versions
JPS6140137B2 (en
Inventor
Fusaji Shoji
Kazunari Takemoto
Ryoichi Sudo
Takeshi Watanabe
Ataru Yokono
Tokio Isogai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1847779A priority Critical patent/JPS55111148A/en
Publication of JPS55111148A publication Critical patent/JPS55111148A/en
Publication of JPS6140137B2 publication Critical patent/JPS6140137B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To prevent infiltration of water onto interface by having metallic film region consisting of Al or the like on the semiconductor substrate through the medium of silicon dioxide film etc., surrounding semiconductor element, and by having phenyl ladder silicone resin coating.
CONSTITUTION: Silicon dioxide film 2 is formed on the surface of semiconductor substrate 1, for which base and emitter regions have been formed on the surface. Then, when forming base electrode 3 and emitter electrode 4 with vacuum evaporation method and photo etching method, metallic film region 7 is formed at the same time so as to surround base electrode 3. Next, after bonding lead wire 5 to electrode, undercoat resin layer 6, consisting of phenyl ladder cilicone resin, is formed. Hereby, as there is no deterioration of adhesive property, caused by water, between metallic film region 7 and undercoat resin layer 6, water is now shut out at the bonded section between metallic film region 7 and undercoat resin region 6, and water does not come into inside.
COPYRIGHT: (C)1980,JPO&Japio
JP1847779A 1979-02-21 1979-02-21 Semiconductor device Granted JPS55111148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1847779A JPS55111148A (en) 1979-02-21 1979-02-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1847779A JPS55111148A (en) 1979-02-21 1979-02-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55111148A true JPS55111148A (en) 1980-08-27
JPS6140137B2 JPS6140137B2 (en) 1986-09-08

Family

ID=11972714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1847779A Granted JPS55111148A (en) 1979-02-21 1979-02-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55111148A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278451A (en) * 1990-10-01 1994-01-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device sealed with mold resin
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US9725561B2 (en) 2014-06-20 2017-08-08 3M Innovative Properties Company Curable polymers comprising silsesquioxane polymer core and silsesquioxane polymer outer layer and methods
US9957358B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable polymers comprising silsesquioxane polymer core silsesquioxane polymer outer layer, and reactive groups
US9957416B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable end-capped silsesquioxane polymer comprising reactive groups
US10066123B2 (en) 2013-12-09 2018-09-04 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
US10370564B2 (en) 2014-06-20 2019-08-06 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
US10392538B2 (en) 2014-06-20 2019-08-27 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5278451A (en) * 1990-10-01 1994-01-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device sealed with mold resin
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US10066123B2 (en) 2013-12-09 2018-09-04 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
US9725561B2 (en) 2014-06-20 2017-08-08 3M Innovative Properties Company Curable polymers comprising silsesquioxane polymer core and silsesquioxane polymer outer layer and methods
US10370564B2 (en) 2014-06-20 2019-08-06 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
US10392538B2 (en) 2014-06-20 2019-08-27 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
US9957358B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable polymers comprising silsesquioxane polymer core silsesquioxane polymer outer layer, and reactive groups
US9957416B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable end-capped silsesquioxane polymer comprising reactive groups

Also Published As

Publication number Publication date
JPS6140137B2 (en) 1986-09-08

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