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DE69624833D1 - Halbleiterdiode mit unterdrückung von auger-generationsprozessen - Google Patents

Halbleiterdiode mit unterdrückung von auger-generationsprozessen

Info

Publication number
DE69624833D1
DE69624833D1 DE69624833T DE69624833T DE69624833D1 DE 69624833 D1 DE69624833 D1 DE 69624833D1 DE 69624833 T DE69624833 T DE 69624833T DE 69624833 T DE69624833 T DE 69624833T DE 69624833 D1 DE69624833 D1 DE 69624833D1
Authority
DE
Germany
Prior art keywords
suppression
semiconductor diode
generation processes
auger generation
auger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69624833T
Other languages
English (en)
Other versions
DE69624833T2 (de
Inventor
Michael White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of DE69624833D1 publication Critical patent/DE69624833D1/de
Application granted granted Critical
Publication of DE69624833T2 publication Critical patent/DE69624833T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
DE69624833T 1995-10-05 1996-09-30 Halbleiterdiode mit unterdrückung von auger-generationsprozessen Expired - Lifetime DE69624833T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9520324.6A GB9520324D0 (en) 1995-10-05 1995-10-05 Improved auger suppressed device
PCT/GB1996/002403 WO1997013278A1 (en) 1995-10-05 1996-09-30 Semiconductor diode with suppression of auger generation processes

Publications (2)

Publication Number Publication Date
DE69624833D1 true DE69624833D1 (de) 2002-12-19
DE69624833T2 DE69624833T2 (de) 2003-07-03

Family

ID=10781805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624833T Expired - Lifetime DE69624833T2 (de) 1995-10-05 1996-09-30 Halbleiterdiode mit unterdrückung von auger-generationsprozessen

Country Status (6)

Country Link
US (1) US6081019A (de)
EP (1) EP0853821B1 (de)
JP (1) JP4393584B2 (de)
DE (1) DE69624833T2 (de)
GB (1) GB9520324D0 (de)
WO (1) WO1997013278A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2354369A (en) * 1999-09-17 2001-03-21 Secr Defence Noise reduced semiconductor photon detectors
US6603184B2 (en) * 2000-09-06 2003-08-05 Applied Optoelectronics, Inc. Double heterostructure photodiode with graded minority-carrier blocking structures
GB0030204D0 (en) 2000-12-12 2001-01-24 Secr Defence Reduced noise semiconductor photodetector
EP1470575B1 (de) * 2002-02-01 2018-07-25 MACOM Technology Solutions Holdings, Inc. Lawinen-fotodiode mit mesa-struktur
EP1470574B9 (de) * 2002-02-01 2017-04-12 Picometrix, LLC Schnelle photodiode mit erhöhter empfindlichkeit
US6906358B2 (en) * 2003-01-30 2005-06-14 Epir Technologies, Inc. Nonequilibrium photodetector with superlattice exclusion layer
US7821807B2 (en) * 2008-04-17 2010-10-26 Epir Technologies, Inc. Nonequilibrium photodetectors with single carrier species barriers
CN103236436B (zh) * 2013-02-28 2016-02-17 溧阳市宏达电机有限公司 一种pin二极管的电极的制造方法
CN103165682B (zh) * 2013-02-28 2015-08-05 溧阳市宏达电机有限公司 一种pin二极管的电极结构
CN103187272B (zh) * 2013-02-28 2015-07-15 溧阳市宏达电机有限公司 一种鳍型pin二极管的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
FR2578101B1 (fr) * 1985-02-26 1987-10-09 Thomson Csf Diode hyperfrequence de type pin a transitions abruptes
GB8828348D0 (en) * 1988-12-05 1989-01-05 Secr Defence Photodetector
GB9100351D0 (en) * 1991-01-08 1991-02-20 Secr Defence Semiconductor heterostructure device

Also Published As

Publication number Publication date
EP0853821B1 (de) 2002-11-13
GB9520324D0 (en) 1995-12-06
JP4393584B2 (ja) 2010-01-06
JPH11512884A (ja) 1999-11-02
EP0853821A1 (de) 1998-07-22
DE69624833T2 (de) 2003-07-03
WO1997013278A1 (en) 1997-04-10
US6081019A (en) 2000-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition