DE69601698D1 - Oberflächen-emittierender Halbleiterlaser - Google Patents

Oberflächen-emittierender Halbleiterlaser

Info

Publication number: DE69601698D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; surface emitting; emitting semiconductor; laser; semiconductor
Prior art date: 1995-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69601698T

Other languages

English (en)

Other versions

DE69601698T2 (de

Inventor

Paul Salet

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Oclaro North America Inc

Original Assignee

Alcatel SA

Nokia Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-12-27

Filing date

1996-12-24

Publication date

1999-04-15

1996-12-24 Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA

1999-04-15 Publication of DE69601698D1 publication Critical patent/DE69601698D1/de

1999-08-05 Application granted granted Critical

1999-08-05 Publication of DE69601698T2 publication Critical patent/DE69601698T2/de

2016-12-25 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18316—Airgap confined
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Spectroscopy & Molecular Physics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
Semiconductor Lasers (AREA)

DE69601698T 1995-12-27 1996-12-24 Oberflächen-emittierender Halbleiterlaser Expired - Fee Related DE69601698T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR9515543A FR2743195B1 (fr)	1995-12-27	1995-12-27	Laser semi-conducteur a emission par la surface

Publications (2)

Publication Number	Publication Date
DE69601698D1 true DE69601698D1 (de)	1999-04-15
DE69601698T2 DE69601698T2 (de)	1999-08-05

Family

ID=9485995

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69601698T Expired - Fee Related DE69601698T2 (de)	1995-12-27	1996-12-24	Oberflächen-emittierender Halbleiterlaser

Country Status (7)

Country	Link
US (1)	US5818862A (de)
EP (1)	EP0782229B1 (de)
JP (1)	JP3372801B2 (de)
AU (1)	AU707419B2 (de)
CA (1)	CA2194003A1 (de)
DE (1)	DE69601698T2 (de)
FR (1)	FR2743195B1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6324192B1 (en)	1995-09-29	2001-11-27	Coretek, Inc.	Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same
US6438149B1 (en)	1998-06-26	2002-08-20	Coretek, Inc.	Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
CA2316858A1 (en)	1997-12-29	1999-07-08	Coretek, Inc.	Microelectromechanically, tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
US6813291B2 (en)	1998-06-26	2004-11-02	Coretek Inc	Tunable fabry-perot filter and tunable vertical cavity surface emitting laser
US6584126B2 (en)	1998-06-26	2003-06-24	Coretek, Inc.	Tunable Fabry-Perot filter and tunable vertical cavity surface emitting laser
US6790375B1 (en) *	1998-09-30	2004-09-14	Lam Research Corporation	Dechucking method and apparatus for workpieces in vacuum processors
US6380029B1 (en)	1998-12-04	2002-04-30	Advanced Micro Devices, Inc.	Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices
US7435660B2 (en) *	1998-12-21	2008-10-14	Finisar Corporation	Migration enhanced epitaxy fabrication of active regions having quantum wells
US20030219917A1 (en) *	1998-12-21	2003-11-27	Johnson Ralph H.	System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US7095770B2 (en)	2001-12-20	2006-08-22	Finisar Corporation	Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7286585B2 (en) *	1998-12-21	2007-10-23	Finisar Corporation	Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6922426B2 (en)	2001-12-20	2005-07-26	Finisar Corporation	Vertical cavity surface emitting laser including indium in the active region
US7058112B2 (en)	2001-12-27	2006-06-06	Finisar Corporation	Indium free vertical cavity surface emitting laser
US7167495B2 (en) *	1998-12-21	2007-01-23	Finisar Corporation	Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US7257143B2 (en) *	1998-12-21	2007-08-14	Finisar Corporation	Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7408964B2 (en)	2001-12-20	2008-08-05	Finisar Corporation	Vertical cavity surface emitting laser including indium and nitrogen in the active region
US6975660B2 (en)	2001-12-27	2005-12-13	Finisar Corporation	Vertical cavity surface emitting laser including indium and antimony in the active region
KR100374796B1 (ko) *	2001-02-02	2003-03-03	삼성전기주식회사	Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법
KR100413912B1 (ko) *	2001-03-07	2004-01-07	한국과학기술원	파장가변형 수직공진 표면광 레이저 장치
US7295586B2 (en)	2002-02-21	2007-11-13	Finisar Corporation	Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) *	2002-02-21	2004-11-23	Finisar Corporation	GaAs/AI(Ga)As distributed bragg reflector on InP
JP2003273467A (ja) *	2002-03-15	2003-09-26	Toshiba Corp	半導体レーザおよびその製造方法
US6965626B2 (en)	2002-09-03	2005-11-15	Finisar Corporation	Single mode VCSEL
US7860143B2 (en) *	2004-04-30	2010-12-28	Finisar Corporation	Metal-assisted DBRs for thermal management in VCSELs
CA2581614A1 (en)	2004-10-01	2006-04-13	Finisar Corporation	Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en)	2004-10-01	2010-12-28	Finisar Corporation	Vertical cavity surface emitting laser with undoped top mirror
JP2006324587A (ja) *	2005-05-20	2006-11-30	Toshiba Corp	半導体発光素子
US9735545B1 (en)	2016-07-08	2017-08-15	Northrop Grumman Systems Corporation	Vertical cavity surface emitting laser with composite reflectors
WO2020105095A1 (ja) *	2018-11-19	2020-05-28	三菱電機株式会社	光半導体装置および光半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5245622A (en) *	1992-05-07	1993-09-14	Bandgap Technology Corporation	Vertical-cavity surface-emitting lasers with intra-cavity structures
US5493577A (en) *	1994-12-21	1996-02-20	Sandia Corporation	Efficient semiconductor light-emitting device and method
US5594751A (en) *	1995-06-26	1997-01-14	Optical Concepts, Inc.	Current-apertured vertical cavity laser

1995
- 1995-12-27 FR FR9515543A patent/FR2743195B1/fr not_active Expired - Fee Related
1996
- 1996-12-19 AU AU75484/96A patent/AU707419B2/en not_active Ceased
- 1996-12-24 DE DE69601698T patent/DE69601698T2/de not_active Expired - Fee Related
- 1996-12-24 EP EP96402875A patent/EP0782229B1/de not_active Expired - Lifetime
- 1996-12-24 CA CA002194003A patent/CA2194003A1/fr not_active Abandoned
- 1996-12-26 US US08/773,360 patent/US5818862A/en not_active Expired - Lifetime
- 1996-12-27 JP JP34959996A patent/JP3372801B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH09186401A (ja)	1997-07-15
FR2743195B1 (fr)	1998-02-06
US5818862A (en)	1998-10-06
AU707419B2 (en)	1999-07-08
CA2194003A1 (fr)	1997-06-28
FR2743195A1 (fr)	1997-07-04
DE69601698T2 (de)	1999-08-05
JP3372801B2 (ja)	2003-02-04
AU7548496A (en)	1997-07-03
EP0782229A1 (de)	1997-07-02
EP0782229B1 (de)	1999-03-10

Publication	Publication Date	Title
DE69601698D1 (de)	1999-04-15	Oberflächen-emittierender Halbleiterlaser
DE69711878D1 (de)	2002-05-16	Oberflächenemittierender Laser
DE69608850D1 (de)	2000-07-20	Halbleiterlaser
DE69116038D1 (de)	1996-02-15	Oberflächenemittierender Halbleiterlaser
DE69404701D1 (de)	1997-09-11	Abstimmbarer oberflächenemittierender Halbleiterlaser
DE69606812D1 (de)	2000-04-06	Halbleiterlaser
DE69633203D1 (de)	2004-09-23	Halbleiterlaser-Vorrichtungen
FR2761822B1 (fr)	1999-05-07	Laser semiconducteur a emission de surface
DE69533276D1 (de)	2004-08-26	Lichtemittierende Halbleitervorrichtungen
DE59609374D1 (de)	2002-07-25	Optoelektronisches halbleiter-bauelement
DE69522778D1 (de)	2001-10-25	Oberflächenemittierender Laser
DE69842032D1 (de)	2011-01-20	Oberflächenemittierender halbleiterlaser
DE69205388D1 (de)	1995-11-16	Oberflächenemittierender Laser.
DE69407455D1 (de)	1998-02-05	Halbleiterlaser
DE69824162D1 (de)	2004-07-01	Verbindungshalbleiterlaser
DE59801130D1 (de)	2001-09-06	Optoelektronisches halbleiterbauelement
DE69801974D1 (de)	2001-11-15	Halbleiterlaser
DE69411364D1 (de)	1998-08-06	Halbleiterlaser
DE69505064D1 (de)	1998-11-05	Wellenlängenabstimmbarer Halbleiterlaser
DE69500371D1 (de)	1997-07-31	Multi-Quantumwell-Halbleiterlaser
DE69432345D1 (de)	2003-04-30	Halbleiterdiodenlaser
DE69624209D1 (de)	2002-11-14	Halbleiterlaserquelle
DE69725783D1 (de)	2003-12-04	Halbleiterlaser
DE69728503D1 (de)	2004-05-13	Halbleiterlaser
DE69902412D1 (de)	2002-09-12	Oberflächenemittierender Laser

Legal Events

Date	Code	Title	Description
2000-04-06	8364	No opposition during term of opposition
2004-02-19	8327	Change in the person/name/address of the patent owner	Owner name: AVANEX CORP., FREMONT, CALIF., US
2005-10-13	8339	Ceased/non-payment of the annual fee