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DE69619149D1 - Solarzelle aus Silizium und Herstellungsverfahren - Google Patents

Solarzelle aus Silizium und Herstellungsverfahren

Info

Publication number
DE69619149D1
DE69619149D1 DE69619149T DE69619149T DE69619149D1 DE 69619149 D1 DE69619149 D1 DE 69619149D1 DE 69619149 T DE69619149 T DE 69619149T DE 69619149 T DE69619149 T DE 69619149T DE 69619149 D1 DE69619149 D1 DE 69619149D1
Authority
DE
Germany
Prior art keywords
solar cell
manufacturing process
silicon solar
silicon
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619149T
Other languages
English (en)
Other versions
DE69619149T2 (de
Inventor
Tadashi Hisamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69619149D1 publication Critical patent/DE69619149D1/de
Application granted granted Critical
Publication of DE69619149T2 publication Critical patent/DE69619149T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69619149T 1995-03-30 1996-03-29 Solarzelle aus Silizium und Herstellungsverfahren Expired - Lifetime DE69619149T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7288095 1995-03-30
JP8013891A JPH08330611A (ja) 1995-03-30 1996-01-30 シリコン太陽電池セルとその製造方法

Publications (2)

Publication Number Publication Date
DE69619149D1 true DE69619149D1 (de) 2002-03-21
DE69619149T2 DE69619149T2 (de) 2002-11-14

Family

ID=26349750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619149T Expired - Lifetime DE69619149T2 (de) 1995-03-30 1996-03-29 Solarzelle aus Silizium und Herstellungsverfahren

Country Status (3)

Country Link
EP (1) EP0735597B1 (de)
JP (1) JPH08330611A (de)
DE (1) DE69619149T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3468670B2 (ja) * 1997-04-28 2003-11-17 シャープ株式会社 太陽電池セルおよびその製造方法
FR2783635B1 (fr) * 1998-09-17 2003-06-27 Saint Louis Inst Procede de durcissement d'un detecteur en materiau semi-conducteur
TWI223012B (en) * 1999-05-28 2004-11-01 Shinetsu Handotai Kk CZ silicon single crystal and wafer doped with gallium and method for producing them
JP2003007709A (ja) * 2001-06-26 2003-01-10 Shin Etsu Handotai Co Ltd ゲッタリング能力を有するシリコン単結晶ウェーハ及びその製造方法
DE102007012277A1 (de) * 2007-03-08 2008-09-11 Gebr. Schmid Gmbh & Co. Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle
KR100974226B1 (ko) * 2007-03-23 2010-08-06 엘지전자 주식회사 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성
US8481357B2 (en) 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
US20100108130A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin Interdigitated backside contact solar cell and manufacturing process thereof
US20100108134A1 (en) * 2008-10-31 2010-05-06 Crystal Solar, Inc. Thin two sided single crystal solar cell and manufacturing process thereof
US8241945B2 (en) * 2010-02-08 2012-08-14 Suniva, Inc. Solar cells and methods of fabrication thereof
EP2611952B1 (de) 2010-09-03 2021-12-29 GTAT IP Holding LLC Verfahren zur herstellung eines mit gallium, indium oder aluminium dotierten silizium-einkristalls
FR2972298B1 (fr) * 2011-03-04 2015-07-31 Commissariat Energie Atomique Procede de metallisation de surfaces texturees
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． 光電変換素子及びその製造方法
KR101871273B1 (ko) 2012-05-11 2018-08-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN102779903A (zh) * 2012-08-13 2012-11-14 苏州盛康光伏科技有限公司 太阳能电池的制备方法
CN109560145A (zh) * 2018-12-30 2019-04-02 无锡赛晶太阳能有限公司 一种太阳电池铝背场结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985579A (en) * 1975-11-26 1976-10-12 The United States Of America As Represented By The Secretary Of The Air Force Rib and channel vertical multijunction solar cell
US4395583A (en) * 1980-04-30 1983-07-26 Communications Satellite Corporation Optimized back contact for solar cells
JPS5976419A (ja) * 1982-10-26 1984-05-01 Agency Of Ind Science & Technol ｐ型シリコン膜の製造方法

Also Published As

Publication number Publication date
EP0735597B1 (de) 2002-02-13
EP0735597A2 (de) 1996-10-02
JPH08330611A (ja) 1996-12-13
DE69619149T2 (de) 2002-11-14
EP0735597A3 (de) 1997-06-04

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Legal Events

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