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DE69424795D1 - Schutzschaltung gegen elektrostatische entladung - Google Patents

Schutzschaltung gegen elektrostatische entladung

Info

Publication number
DE69424795D1
DE69424795D1 DE69424795T DE69424795T DE69424795D1 DE 69424795 D1 DE69424795 D1 DE 69424795D1 DE 69424795 T DE69424795 T DE 69424795T DE 69424795 T DE69424795 T DE 69424795T DE 69424795 D1 DE69424795 D1 DE 69424795D1
Authority
DE
Germany
Prior art keywords
electrostatic discharge
protective circuit
against electrostatic
circuit against
protective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69424795T
Other languages
English (en)
Other versions
DE69424795T2 (de
Inventor
R Wagner
Jeffrey Smith
A Maiz
C Webb
M Holt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE69424795D1 publication Critical patent/DE69424795D1/de
Application granted granted Critical
Publication of DE69424795T2 publication Critical patent/DE69424795T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
DE69424795T 1993-10-15 1994-08-16 Schutzschaltung gegen elektrostatische entladung Expired - Fee Related DE69424795T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/138,472 US5430595A (en) 1993-10-15 1993-10-15 Electrostatic discharge protection circuit
PCT/US1994/009253 WO1995010855A1 (en) 1993-10-15 1994-08-16 Electrostatic discharge protection circuit

Publications (2)

Publication Number Publication Date
DE69424795D1 true DE69424795D1 (de) 2000-07-06
DE69424795T2 DE69424795T2 (de) 2001-01-04

Family

ID=22482165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69424795T Expired - Fee Related DE69424795T2 (de) 1993-10-15 1994-08-16 Schutzschaltung gegen elektrostatische entladung

Country Status (11)

Country Link
US (1) US5430595A (de)
EP (1) EP0723706B1 (de)
JP (1) JPH09503887A (de)
KR (1) KR100275252B1 (de)
CN (1) CN1076874C (de)
AU (1) AU7567194A (de)
CA (1) CA2177150C (de)
DE (1) DE69424795T2 (de)
HK (1) HK1011460A1 (de)
SG (1) SG75777A1 (de)
WO (1) WO1995010855A1 (de)

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US5901065A (en) * 1996-02-07 1999-05-04 Motorola, Inc. Apparatus and method for automatically placing ties and connection elements within an integrated circuit
US5708377A (en) * 1996-02-23 1998-01-13 Wiltron Company Low power dual sampler utilizing step recovery diodes (SRDS)
US5728612A (en) * 1996-07-19 1998-03-17 Lsi Logic Corporation Method for forming minimum area structures for sub-micron CMOS ESD protection in integrated circuit structures without extra implant and mask steps, and articles formed thereby
US5917689A (en) * 1996-09-12 1999-06-29 Analog Devices, Inc. General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits
US5740000A (en) * 1996-09-30 1998-04-14 Hewlett-Packard Co. ESD protection system for an integrated circuit with multiple power supply networks
US6008684A (en) * 1996-10-23 1999-12-28 Industrial Technology Research Institute CMOS output buffer with CMOS-controlled lateral SCR devices
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US6034399A (en) * 1997-03-06 2000-03-07 Lockheed Martin Corporation Electrostatic discharge protection for silicon-on-insulator
US6040968A (en) * 1997-06-30 2000-03-21 Texas Instruments Incorporated EOS/ESD protection for high density integrated circuits
JP3557510B2 (ja) * 1997-06-30 2004-08-25 沖電気工業株式会社 半導体装置
US5969390A (en) * 1997-07-22 1999-10-19 Zilog, Inc. Layout solution for electromagnetic interference reduction
US6133597A (en) * 1997-07-25 2000-10-17 Mosel Vitelic Corporation Biasing an integrated circuit well with a transistor electrode
US6037636A (en) * 1998-05-19 2000-03-14 National Semiconductor Corporation Electrostatic discharge protection circuit and method
TW399337B (en) * 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
US6365924B1 (en) * 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6445039B1 (en) * 1998-11-12 2002-09-03 Broadcom Corporation System and method for ESD Protection
EP1145318B1 (de) * 1999-01-15 2015-12-30 Broadcom Corporation System und verfahren für esd-schutz
US8405152B2 (en) 1999-01-15 2013-03-26 Broadcom Corporation System and method for ESD protection
US7687858B2 (en) * 1999-01-15 2010-03-30 Broadcom Corporation System and method for ESD protection
US6118640A (en) * 1999-02-17 2000-09-12 Pericom Semiconductor Corp. Actively-driven thin-oxide MOS transistor shunt for ESD protection of multiple independent supply busses in a mixed-signal chip
KR100518526B1 (ko) * 1999-02-25 2005-10-04 삼성전자주식회사 사이리스터의 트리거 전류를 이용한 정전하 방전회로
DE19944489A1 (de) * 1999-09-16 2001-04-19 Infineon Technologies Ag ESD-Schutzanordnung für Signaleingänge und -ausgänge bei Halbleitervorrichtungen mit Substrattrennung
US6512662B1 (en) * 1999-11-30 2003-01-28 Illinois Institute Of Technology Single structure all-direction ESD protection for integrated circuits
KR100338105B1 (ko) * 1999-12-28 2002-05-24 박종섭 반도체 소자용 정전기 방전구조
US6358781B1 (en) * 2000-06-30 2002-03-19 Taiwan Semiconductor Manufacturing Company Uniform current distribution SCR device for high voltage ESD protection
EP2395620B1 (de) 2001-03-16 2015-06-17 Sofics BVBA Strukturen zum Schutz vor elektrostatischen Entladungen für Hochgeschwindigkeitstechnologien mit gemischten und Ultraniederspannungsversorgungen
US7589944B2 (en) * 2001-03-16 2009-09-15 Sofics Bvba Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
US6600204B2 (en) * 2001-07-11 2003-07-29 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the same
US6590261B2 (en) * 2001-10-10 2003-07-08 Macronix International Co., Ltd. Electrostatic discharge protection structure
US6770938B1 (en) 2002-01-16 2004-08-03 Advanced Micro Devices, Inc. Diode fabrication for ESD/EOS protection
CN100490143C (zh) * 2002-01-30 2009-05-20 联华电子股份有限公司 非门控二极管、制造方法和应用其的静电放电防护电路
US6894881B1 (en) * 2002-02-19 2005-05-17 National Semiconductor Corp ESD protection methods and devices using additional terminal in the diode structures
CN100401512C (zh) * 2002-03-26 2008-07-09 华邦电子股份有限公司 利用硅控整流器的静电放电保护电路
US6826025B2 (en) 2002-05-20 2004-11-30 International Business Machines Corporation Method and apparatus for providing ESD protection and/or noise reduction in an integrated circuit
AU2002950581A0 (en) * 2002-08-02 2002-09-12 Wayne Callen Electrical safety circuit
DE10255130B4 (de) * 2002-11-26 2007-03-22 Infineon Technologies Ag Schaltungsanordnung zum Schutz integrierter Schaltungen vor elektrostatischen Entladungen mit parallelem Strompfad
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
DE10349405A1 (de) 2003-10-21 2005-05-25 Austriamicrosystems Ag Aktive Schutzschaltungsanordnung
EP1560030A1 (de) * 2004-01-28 2005-08-03 Koninklijke Philips Electronics N.V. Verfahren und Vorrichtung zur Latch-up-Anfälligkeitsprüfung von integrierten Schaltungen
US7002218B2 (en) 2004-02-26 2006-02-21 Microchip Technology Incorporated Low capacitance ESD-protection structure under a bond pad
US6849902B1 (en) * 2004-03-11 2005-02-01 Winbond Electronics Corp. Input/output cell with robust electrostatic discharge protection
CN1930676B (zh) * 2004-03-12 2010-06-16 罗姆股份有限公司 半导体装置
US20050225916A1 (en) * 2004-04-02 2005-10-13 Siemens Medical Solutions Usa, Inc. Ultrasound membrane transducer collapse protection system and method
US7649726B2 (en) * 2004-08-16 2010-01-19 National Instruments Corporation Protection circuit for general-purpose digital I/O lines
US7439592B2 (en) * 2004-12-13 2008-10-21 Broadcom Corporation ESD protection for high voltage applications
US7505238B2 (en) * 2005-01-07 2009-03-17 Agnes Neves Woo ESD configuration for low parasitic capacitance I/O
US7042028B1 (en) * 2005-03-14 2006-05-09 System General Corp. Electrostatic discharge device
US7518844B1 (en) * 2006-02-10 2009-04-14 Integrated Device Technology, Inc. Over-voltage tolerant ESD protection circuit
TWI339886B (en) * 2006-09-14 2011-04-01 Novatek Microelectronics Corp Layout structure of electrostatic discharge protection circuit and production method thereof
CN101154657B (zh) * 2006-09-25 2010-04-07 联詠科技股份有限公司 静电放电防护电路的布局结构及其制造方法
CN101378191B (zh) * 2007-08-28 2010-12-15 比亚迪股份有限公司 静电放电保护电路及使用其的电子产品
US7701682B2 (en) * 2008-01-31 2010-04-20 Freescale Semiconductors, Inc. Electrostatic discharge protection
CN101847633B (zh) * 2010-05-05 2011-10-26 北京大学 一种静电保护器件及其制备方法
US8467162B2 (en) 2010-12-30 2013-06-18 United Microelectronics Corp. ESD protection circuit and ESD protection device thereof
DE102011018450B4 (de) * 2011-04-21 2017-08-31 Infineon Technologies Ag Halbleiterbauelement mit durchgeschalteten parasitären Thyristor bei einem Lichtangriff und Halbleiterbauelement mit Alarmschaltung für einen Lichtangriff
US8648386B2 (en) * 2011-08-31 2014-02-11 Macronix International Co., Ltd. Semiconductor structure and manufacturing method for the same and ESD circuit
WO2013095545A1 (en) 2011-12-22 2013-06-27 Intel Corporation Distributed electrostatic discharge protection for an on-package input/output architecture
CN105870118B (zh) * 2011-12-22 2019-11-08 英特尔公司 用于封装体上输入/输出架构的分布式静电放电保护
CN104269401B (zh) * 2014-08-30 2017-03-29 电子科技大学 一种基于scr结构的新型esd保护器件
TWI661530B (zh) * 2018-02-13 2019-06-01 力晶積成電子製造股份有限公司 靜電放電保護元件
US11282831B2 (en) * 2019-09-18 2022-03-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device having multiple electrostatic discharge (ESD) paths
CN113540070B (zh) * 2020-04-20 2023-12-12 长鑫存储技术有限公司 静电保护电路
US20210408786A1 (en) * 2020-06-30 2021-12-30 Qualcomm Incorporated Circuit techniques for enhanced electrostatic discharge (esd) robustness
US11689014B2 (en) * 2021-06-24 2023-06-27 Qualcomm Incorporated Electrostatic discharge circuit for multi-voltage rail thin-gate output driver

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US5225702A (en) * 1991-12-05 1993-07-06 Texas Instruments Incorporated Silicon controlled rectifier structure for electrostatic discharge protection
US5287241A (en) * 1992-02-04 1994-02-15 Cirrus Logic, Inc. Shunt circuit for electrostatic discharge protection

Also Published As

Publication number Publication date
CN1133105A (zh) 1996-10-09
EP0723706A1 (de) 1996-07-31
SG75777A1 (en) 2000-10-24
HK1011460A1 (en) 1999-07-09
CA2177150C (en) 2003-10-28
AU7567194A (en) 1995-05-04
CN1076874C (zh) 2001-12-26
KR960705369A (ko) 1996-10-09
EP0723706A4 (de) 1997-01-08
KR100275252B1 (ko) 2001-01-15
US5430595A (en) 1995-07-04
JPH09503887A (ja) 1997-04-15
WO1995010855A1 (en) 1995-04-20
CA2177150A1 (en) 1995-04-20
DE69424795T2 (de) 2001-01-04
EP0723706B1 (de) 2000-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee