DE69226337D1 - Schutzstruktur gegen elektrostatische Entladungen - Google Patents

Schutzstruktur gegen elektrostatische Entladungen

Info

Publication number: DE69226337D1
Authority: DE; Germany
Prior art keywords: electrostatic discharge; protective structure; structure against; against electrostatic; protective
Prior art date: 1991-11-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69226337T

Other languages

English (en)

Other versions

DE69226337T2 (de

Inventor

William A Bishop

Mehdi Zamanian

Tsiu C Chan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

STMicroelectronics lnc USA

Original Assignee

SGS Thomson Microelectronics Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-11-19

Filing date

1992-11-18

Publication date

1998-08-27

1992-11-18 Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc

1998-08-27 Application granted granted Critical

1998-08-27 Publication of DE69226337D1 publication Critical patent/DE69226337D1/de

1998-12-03 Publication of DE69226337T2 publication Critical patent/DE69226337T2/de

2012-11-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

DE69226337T 1991-11-19 1992-11-18 Schutzstruktur gegen elektrostatische Entladungen Expired - Fee Related DE69226337T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US07/794,488 US5272371A (en)	1991-11-19	1991-11-19	Electrostatic discharge protection structure

Publications (2)

Publication Number	Publication Date
DE69226337D1 true DE69226337D1 (de)	1998-08-27
DE69226337T2 DE69226337T2 (de)	1998-12-03

Family

ID=25162775

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69226337T Expired - Fee Related DE69226337T2 (de)	1991-11-19	1992-11-18	Schutzstruktur gegen elektrostatische Entladungen

Country Status (4)

Country	Link
US (1)	US5272371A (de)
EP (1)	EP0546698B1 (de)
JP (1)	JP3221942B2 (de)
DE (1)	DE69226337T2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2685817B1 (fr) *	1991-12-31	1994-03-11	Sgs Thomson Microelectronics Sa	Protection generale d'un circuit integre contre les surcharges permanentes et decharges electrostatiques.
FR2690786A1 (fr) *	1992-04-30	1993-10-29	Sgs Thomson Microelectronics Sa	Dispositif de protection d'un circuit intégré contre les décharges électrostatiques.
US5440151A (en) *	1993-04-09	1995-08-08	Matra Mhs	Electrostatic discharge protection device for MOS integrated circuits
US5473169A (en) *	1995-03-17	1995-12-05	United Microelectronics Corp.	Complementary-SCR electrostatic discharge protection circuit
US5604373A (en) *	1995-04-03	1997-02-18	Motorola, Inc.	Circuit and method of reverse voltage protection using a lateral transistor having a collector ring surrounding its base region
US5572394A (en) *	1995-04-06	1996-11-05	Industrial Technology Research Institute	CMOS on-chip four-LVTSCR ESD protection scheme
US5754380A (en) *	1995-04-06	1998-05-19	Industrial Technology Research Institute	CMOS output buffer with enhanced high ESD protection capability
JP3121618B2 (ja) *	1995-04-06	2001-01-09	インダストリアルテクノロジーリサーチインスティチュート	多重セルトランジスタのためのｎ辺多角形セルレイアウト
US5637900A (en) *	1995-04-06	1997-06-10	Industrial Technology Research Institute	Latchup-free fully-protected CMOS on-chip ESD protection circuit
KR100496362B1 (ko) *	1995-07-11	2006-05-02	텍사스 인스트루먼츠 인코포레이티드	기판트리거된래터럴npn을이용한집적esd보호회로
US5714784A (en) *	1995-10-19	1998-02-03	Winbond Electronics Corporation	Electrostatic discharge protection device
US6469353B1 (en)	1996-07-01	2002-10-22	Texas Instruments Incorporated	Integrated ESD protection circuit using a substrate triggered lateral NPN
SE512494C2 (sv) *	1997-09-02	2000-03-27	Ericsson Telefon Ab L M	Skyddskrets
US5852541A (en) *	1997-10-22	1998-12-22	Winbond Electronics Corp.	Early trigger of ESD protection device by an oscillation circuit
US6043967A (en) *	1997-10-22	2000-03-28	Winbond Electronics Corp.	Early trigger of ESD protection device by a voltage pump circuit
US5870268A (en) *	1997-10-22	1999-02-09	Winbond Electronics Corp.	Early trigger of ESD protection device by a current spike generator
US6091593A (en) *	1997-10-22	2000-07-18	Winbond Electronics Corp.	Early trigger of ESD protection device by a negative voltage pump circuit
US5985705A (en) *	1998-06-30	1999-11-16	Lsi Logic Corporation	Low threshold voltage MOS transistor and method of manufacture
SE9900439D0 (sv) *	1999-02-09	1999-02-09	Ericsson Telefon Ab L M	Electrostatic discharge protection of integrated circuits
US20010043449A1 (en) *	2000-05-15	2001-11-22	Nec Corporation	ESD protection apparatus and method for fabricating the same
US7629210B2 (en) *	2000-05-15	2009-12-08	Nec Corporation	Method for fabricating an ESD protection apparatus for discharging electric charge in a depth direction
EP2395620B1 (de)	2001-03-16	2015-06-17	Sofics BVBA	Strukturen zum Schutz vor elektrostatischen Entladungen für Hochgeschwindigkeitstechnologien mit gemischten und Ultraniederspannungsversorgungen
US7589944B2 (en) *	2001-03-16	2009-09-15	Sofics Bvba	Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
US6455919B1 (en)	2001-03-19	2002-09-24	International Business Machines Corporation	Internally ballasted silicon germanium transistor
KR20020082400A (ko) *	2001-04-19	2002-10-31	닛본 덴기 가부시끼가이샤	Ｅｓｄ보호장치 및 그것의 제조방법
KR100401507B1 (ko) *	2001-05-10	2003-10-17	주식회사 하이닉스반도체	반도체 메모리 장치의 입력 캐패시턴스의 미세조정 회로및 그 제조방법
US6770938B1 (en)	2002-01-16	2004-08-03	Advanced Micro Devices, Inc.	Diode fabrication for ESD/EOS protection
US6635931B1 (en) *	2002-04-02	2003-10-21	Illinois Institute Of Technology	Bonding pad-oriented all-mode ESD protection structure
US6927345B2 (en) *	2002-05-16	2005-08-09	Taiwan Semiconductor Manufacturing Co., Ltd	Guard ring having electrically isolated lightening bars
US7244992B2 (en) *	2003-07-17	2007-07-17	Ming-Dou Ker	Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
JP4000096B2 (ja) *	2003-08-04	2007-10-31	株式会社東芝	Ｅｓｄ保護回路
DE10348446B4 (de) *	2003-10-14	2011-12-15	Zentrum Mikroelektronik Dresden Ag	Anordnung für eine ESD-Schutzschaltung
JP4094012B2 (ja) *	2005-02-21	2008-06-04	松下電器産業株式会社	半導体装置
JP4955222B2 (ja)	2005-05-20	2012-06-20	ルネサスエレクトロニクス株式会社	半導体装置の製造方法
JP5132077B2 (ja) *	2006-04-18	2013-01-30	オンセミコンダクター・トレーディング・リミテッド	半導体装置
US8648386B2 (en) *	2011-08-31	2014-02-11	Macronix International Co., Ltd.	Semiconductor structure and manufacturing method for the same and ESD circuit
JP5749616B2 (ja) *	2011-09-27	2015-07-15	セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー	半導体装置
JP2013172085A (ja) *	2012-02-22	2013-09-02	Asahi Kasei Electronics Co Ltd	半導体装置の製造方法及び半導体装置
US9716016B2 (en) *	2012-12-20	2017-07-25	Taiwan Semiconductor Manufacturing Company Limited	Electrostatic discharge (ESD) clamp
US9343369B2 (en) *	2014-05-19	2016-05-17	Qualcomm Incorporated	Three dimensional (3D) integrated circuits (ICs) (3DICs) and related systems
TWI661530B (zh) *	2018-02-13	2019-06-01	力晶積成電子製造股份有限公司	靜電放電保護元件
KR20210071134A (ko) *	2019-12-05	2021-06-16	삼성전자주식회사	반도체 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE269946C (de) *
US3787717A (en) *	1971-12-09	1974-01-22	Ibm	Over voltage protection circuit lateral bipolar transistor with gated collector junction
US4476476A (en) *	1979-04-05	1984-10-09	National Semiconductor Corporation	CMOS Input and output protection circuit
JPS60233856A (ja) *	1984-05-02	1985-11-20	Hitachi Ltd	半導体装置
US4692781B2 (en) *	1984-06-06	1998-01-20	Texas Instruments Inc	Semiconductor device with electrostatic discharge protection
JPS6236867A (ja) *	1985-08-09	1987-02-17	Mitsubishi Electric Corp	入力保護回路
US4987465A (en) *	1987-01-29	1991-01-22	Advanced Micro Devices, Inc.	Electro-static discharge protection device for CMOS integrated circuit inputs
US4819047A (en) *	1987-05-15	1989-04-04	Advanced Micro Devices, Inc.	Protection system for CMOS integrated circuits
US4855620A (en) *	1987-11-18	1989-08-08	Texas Instruments Incorporated	Output buffer with improved ESD protection
FR2624655B1 (fr) *	1987-12-14	1990-05-11	Sgs Thomson Microelectronics	Structure de protection d'un acces a un circuit integre
US4896243A (en) *	1988-12-20	1990-01-23	Texas Instruments Incorporated	Efficient ESD input protection scheme
US5043782A (en) *	1990-05-08	1991-08-27	David Sarnoff Research Center, Inc.	Low voltage triggered snap-back device
DE3918090A1 (de) *	1989-06-02	1990-12-06	Siemens Ag	Schutzschaltung gegen ueberspannungen fuer mos-bauelemente
FR2649830B1 (fr) *	1989-07-13	1994-05-27	Sgs Thomson Microelectronics	Structure de circuit integre cmos protege contre les decharges electrostatiques
JPH065705B2 (ja) *	1989-08-11	1994-01-19	株式会社東芝	半導体集積回路装置

1991
- 1991-11-19 US US07/794,488 patent/US5272371A/en not_active Expired - Lifetime
1992
- 1992-11-18 EP EP92310507A patent/EP0546698B1/de not_active Expired - Lifetime
- 1992-11-18 DE DE69226337T patent/DE69226337T2/de not_active Expired - Fee Related
- 1992-11-19 JP JP31012992A patent/JP3221942B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US5272371A (en)	1993-12-21
JPH05259394A (ja)	1993-10-08
EP0546698A1 (de)	1993-06-16
JP3221942B2 (ja)	2001-10-22
DE69226337T2 (de)	1998-12-03
EP0546698B1 (de)	1998-07-22

Publication	Publication Date	Title
DE69220159D1 (de)	1997-07-10	Schutzstruktur gegen elektrostatische Entladungen
DE69226337D1 (de)	1998-08-27	Schutzstruktur gegen elektrostatische Entladungen
DE69424795D1 (de)	2000-07-06	Schutzschaltung gegen elektrostatische entladung
EP0776527A4 (de)	1997-12-29	Schutzschaltung gegen eltektrostatische entladung
DE69202998D1 (de)	1995-07-27	Schuztvorrichtung gegenüber elektrostatischen Entladungen.
DE69311627D1 (de)	1997-07-24	Schutzvorrichtung einer integrierten Schaltung gegen elektrostatische Entladungen
DE69226735D1 (de)	1998-10-01	Steckverbinder mit Schutz gegen elektrostatische Entladung
DE69532116D1 (de)	2003-12-18	Implantatvorrichtung mit schutz gegen elektrostatische entladung
DE69933595D1 (de)	2006-11-30	Schutzschaltung gegen elektrostatische Entladung
DE69214374D1 (de)	1996-11-14	Elektrostatischer Abscheider
DE69207530D1 (de)	1996-02-22	Entladungsröhre
FI925326L (fi)	1994-03-03	Skydd
DE69407587D1 (de)	1998-02-05	Überspannungsschutz
DE59209606D1 (de)	1999-02-18	Gegen Lichtschädigung stabilisierte Ueberzugsmaterialien
DE19781646T1 (de)	1999-03-11	Spannungstolerante elektrostatische Entladungsschutzeinrichtung
FI103862B1 (fi)	1999-10-15	Suojain
DE3856420D1 (de)	2000-08-24	Gegen elektrostatische Entladungen geschützter integrierter Schaltkreis mit variablem Schutzschwellwert
DE69219975D1 (de)	1997-07-03	Schutzvorrichtung gegen elektrostatische Entladungen mit reduziertem Leckstrom
DE69518571D1 (de)	2000-10-05	Schutzanordnung gegen elektrostatische Entladungen
DE69406757D1 (de)	1997-12-18	Koronaentladungsreaktor
NO953207L (no)	1995-08-15	Beskyttelsesvern
DE69331363D1 (de)	2002-01-31	Elektrostatische Entladungsschutzvorrichtung für Büroraüme
DE69818264D1 (de)	2003-10-23	Schutzanordnung gegen elektrostatische entladungen
BR9302741A (pt)	1994-02-08	Conjunto descarregador de sobretensoes
DE69131183D1 (de)	1999-06-02	Schutzanordnung gegen elektostatische entladungen

Legal Events

Date	Code	Title	Description
1999-08-19	8364	No opposition during term of opposition
2004-09-23	8339	Ceased/non-payment of the annual fee