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DE69416363D1 - Abbildendes festkörperbauteil und herstellungsverfahren dafür - Google Patents

Abbildendes festkörperbauteil und herstellungsverfahren dafür

Info

Publication number
DE69416363D1
DE69416363D1 DE69416363T DE69416363T DE69416363D1 DE 69416363 D1 DE69416363 D1 DE 69416363D1 DE 69416363 T DE69416363 T DE 69416363T DE 69416363 T DE69416363 T DE 69416363T DE 69416363 D1 DE69416363 D1 DE 69416363D1
Authority
DE
Germany
Prior art keywords
manufacturing
solid component
method therefor
imaging solid
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69416363T
Other languages
English (en)
Other versions
DE69416363T2 (de
Inventor
Michio Arai
Takashi Inushima
Mitsufumi Codama
Kazushi Sugiura
Ichiro Takayama
Isamu - B- Kobori
Yukio - - - Yamauchi
Naoya - - Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06378993A external-priority patent/JP3267375B2/ja
Priority claimed from JP5314135A external-priority patent/JPH07142694A/ja
Application filed by Semiconductor Energy Laboratory Co Ltd, TDK Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE69416363D1 publication Critical patent/DE69416363D1/de
Application granted granted Critical
Publication of DE69416363T2 publication Critical patent/DE69416363T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
DE69416363T 1993-03-23 1994-03-22 Abbildendes festkörperbauteil und herstellungsverfahren dafür Expired - Lifetime DE69416363T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP06378993A JP3267375B2 (ja) 1993-03-23 1993-03-23 固体撮像装置
JP5314135A JPH07142694A (ja) 1993-11-19 1993-11-19 半導体装置およびその動作方法
PCT/JP1994/000452 WO1994022173A1 (fr) 1993-03-23 1994-03-22 Dispositif d'imagerie a semiconducteurs et procede de production correspondant

Publications (2)

Publication Number Publication Date
DE69416363D1 true DE69416363D1 (de) 1999-03-18
DE69416363T2 DE69416363T2 (de) 1999-09-23

Family

ID=26404914

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416363T Expired - Lifetime DE69416363T2 (de) 1993-03-23 1994-03-22 Abbildendes festkörperbauteil und herstellungsverfahren dafür

Country Status (4)

Country Link
US (2) US5574293A (de)
EP (1) EP0642179B1 (de)
DE (1) DE69416363T2 (de)
WO (1) WO1994022173A1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3497627B2 (ja) * 1994-12-08 2004-02-16 株式会社東芝 半導体装置およびその製造方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) * 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
JP3865145B2 (ja) * 1996-01-26 2007-01-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
GB9603052D0 (en) * 1996-02-14 1996-04-10 Philips Electronics Nv Image sensor
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6746905B1 (en) 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
JP3126661B2 (ja) 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 液晶表示装置
JP3634089B2 (ja) * 1996-09-04 2005-03-30 株式会社半導体エネルギー研究所 表示装置
US5994164A (en) * 1997-03-18 1999-11-30 The Penn State Research Foundation Nanostructure tailoring of material properties using controlled crystallization
US5847422A (en) * 1997-05-19 1998-12-08 Foveonics, Inc. MOS-based active pixel sensor cell that utilizes the parasitic bipolar action of the cell to output image data
US6001540A (en) * 1998-06-03 1999-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Microlens process
KR100291179B1 (ko) * 1998-06-29 2001-07-12 박종섭 자기정렬된실리사이드층을갖는씨모스이미지센서및그제조방법
JP4174862B2 (ja) * 1998-08-04 2008-11-05 ソニー株式会社 薄膜トランジスタの製造方法および半導体装置の製造方法
KR100631011B1 (ko) * 1999-08-12 2006-10-04 엘지.필립스 엘시디 주식회사 박막트랜지스터 제조방법
US7751600B2 (en) * 2000-04-18 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. System and method for identifying an individual
US6952025B2 (en) * 2000-06-08 2005-10-04 Showa Denko K.K. Semiconductor light-emitting device
TWI256976B (en) * 2000-08-04 2006-06-21 Hannstar Display Corp Method of patterning an ITO layer
US6580053B1 (en) * 2000-08-31 2003-06-17 Sharp Laboratories Of America, Inc. Apparatus to control the amount of oxygen incorporated into polycrystalline silicon film during excimer laser processing of silicon films
KR100643038B1 (ko) * 2000-08-31 2006-11-10 엘지.필립스 엘시디 주식회사 박막트랜지스터형 광센서 어레이 기판
JP2005005509A (ja) * 2003-06-12 2005-01-06 Canon Inc 薄膜トランジスタ及びその製造方法
TWI260093B (en) * 2005-01-25 2006-08-11 Au Optronics Corp Thin film transistor with microlens structure, forming method thereof and TFT display panel comprising thereof
EP1727120B1 (de) 2005-05-23 2008-07-09 Semiconductor Energy Laboratory Co., Ltd. Photoelektrische Umwandleranordnung und Verfahren zu ihrer Herstellung
KR101299604B1 (ko) * 2005-10-18 2013-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
US8514165B2 (en) * 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20080099594A (ko) * 2007-05-10 2008-11-13 삼성전자주식회사 광센서와, 이를 구비한 표시 패널 및 표시 장치
JP2012019146A (ja) * 2010-07-09 2012-01-26 Sony Corp 撮像装置、表示撮像装置および電子機器
JP2020057639A (ja) 2018-09-28 2020-04-09 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び半導体装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284984A1 (fr) * 1974-09-13 1976-04-09 Commissariat Energie Atomique Procede de realisation de transistors m.o.s. sur isolant pour la detection de rayonnements
US4598305A (en) * 1984-06-18 1986-07-01 Xerox Corporation Depletion mode thin film semiconductor photodetectors
JPS6329924A (ja) * 1986-07-23 1988-02-08 Komatsu Ltd 半導体装置の製造方法
JPH0210877A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd 光学的パターン検出装置の製造方法
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
JPH02210877A (ja) * 1989-02-10 1990-08-22 Seiko Epson Corp 固体撮像装置
JPH039562A (ja) * 1989-06-07 1991-01-17 Sharp Corp 半導体装置
JPH0323671A (ja) * 1989-06-21 1991-01-31 Nippon Sheet Glass Co Ltd 集積化機能デバイス及びその製造方法並びにこのデバイスを用いた機能モジュール
DE69125886T2 (de) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
US5273910A (en) * 1990-08-08 1993-12-28 Minnesota Mining And Manufacturing Company Method of making a solid state electromagnetic radiation detector
US5221365A (en) * 1990-10-22 1993-06-22 Sanyo Electric Co., Ltd. Photovoltaic cell and method of manufacturing polycrystalline semiconductive film
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5254480A (en) * 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
SG46344A1 (en) * 1992-11-16 1998-02-20 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate and apparatus and method for evaluating semiconductor crystals

Also Published As

Publication number Publication date
WO1994022173A1 (fr) 1994-09-29
US5574293A (en) 1996-11-12
EP0642179B1 (de) 1999-02-03
EP0642179A4 (de) 1995-08-30
US5591988A (en) 1997-01-07
DE69416363T2 (de) 1999-09-23
EP0642179A1 (de) 1995-03-08

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE KNOBLAUCH UND KNOBLAUCH, 60322 FRANK