DE69408707D1 - Lichtempfindliche Halbleitervorrichtung - Google Patents

Lichtempfindliche Halbleitervorrichtung

Info

Publication number: DE69408707D1
Authority: DE; Germany
Prior art keywords: semiconductor device; photosensitive semiconductor; photosensitive; semiconductor
Prior art date: 1993-04-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69408707T

Other languages

English (en)

Other versions

DE69408707T2 (de

Inventor

Motohiko Yamamoto

Masaru Kubo

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-04-19

Filing date

1994-04-19

Publication date

1998-04-09

1994-04-19 Application filed by Sharp Corp filed Critical Sharp Corp

1998-04-09 Application granted granted Critical

1998-04-09 Publication of DE69408707D1 publication Critical patent/DE69408707D1/de

1998-09-10 Publication of DE69408707T2 publication Critical patent/DE69408707T2/de

2014-04-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B20/00—Use of materials as fillers for mortars, concrete or artificial stone according to more than one of groups C04B14/00 - C04B18/00 and characterised by shape or grain distribution; Treatment of materials according to more than one of the groups C04B14/00 - C04B18/00 specially adapted to enhance their filling properties in mortars, concrete or artificial stone; Expanding or defibrillating materials
- C04B20/10—Coating or impregnating
- C04B20/1055—Coating or impregnating with inorganic materials
- C04B20/1077—Cements, e.g. waterglass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Ceramic Engineering (AREA)
Inorganic Chemistry (AREA)
Materials Engineering (AREA)
Structural Engineering (AREA)
Organic Chemistry (AREA)
Light Receiving Elements (AREA)
Element Separation (AREA)
Photovoltaic Devices (AREA)

DE69408707T 1993-04-19 1994-04-19 Lichtempfindliche Halbleitervorrichtung Expired - Fee Related DE69408707T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP5091269A JP2799540B2 (ja)	1993-04-19	1993-04-19	受光素子

Publications (2)

Publication Number	Publication Date
DE69408707D1 true DE69408707D1 (de)	1998-04-09
DE69408707T2 DE69408707T2 (de)	1998-09-10

Family

ID=14021731

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69408707T Expired - Fee Related DE69408707T2 (de)	1993-04-19	1994-04-19	Lichtempfindliche Halbleitervorrichtung

Country Status (4)

Country	Link
US (1)	US5466962A (de)
EP (1)	EP0621639B1 (de)
JP (1)	JP2799540B2 (de)
DE (1)	DE69408707T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2731115B2 (ja) *	1994-07-14	1998-03-25	シャープ株式会社	分割型受光素子
DE69523285D1 (de) *	1995-02-27	2001-11-22	Cons Ric Microelettronica	Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
JP2833588B2 (ja) *	1996-07-30	1998-12-09	日本電気株式会社	フォトディテクタおよびその製造方法
JP3170463B2 (ja) *	1996-09-30	2001-05-28	シャープ株式会社	回路内蔵受光素子
TW423103B (en) *	1997-01-27	2001-02-21	Sharp Kk	Divided photodiode
TW504849B (en) *	1997-02-25	2002-10-01	Matsushita Electric Ind Co Ltd	Optical receiver
JP4131031B2 (ja) *	1998-03-17	2008-08-13	ソニー株式会社	受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
DE69933820D1 (de) *	1998-03-21	2006-12-14	Univ Liverpool John Moores	Teilchenfoermiges Material zur Verwendung in der Bautechnik und Herstellungsverfahren
US6218691B1 (en) *	1998-06-30	2001-04-17	Hyundai Electronics Industries Co., Ltd.	Image sensor with improved dynamic range by applying negative voltage to unit pixel
US6218719B1 (en)	1998-09-18	2001-04-17	Capella Microsystems, Inc.	Photodetector and device employing the photodetector for converting an optical signal into an electrical signal
JP3370298B2 (ja) *	1999-07-27	2003-01-27	シャープ株式会社	回路内蔵受光素子
JP4131059B2 (ja) *	1999-08-23	2008-08-13	ソニー株式会社	受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
JP3900233B2 (ja)	1999-09-06	2007-04-04	シャープ株式会社	受光素子および回路内蔵型受光素子
JP3317942B2 (ja)	1999-11-08	2002-08-26	シャープ株式会社	半導体装置およびその製造方法
JP4208172B2 (ja) *	2000-10-31	2009-01-14	シャープ株式会社	フォトダイオードおよびそれを用いた回路内蔵受光素子
EP1564817A1 (de) *	2004-02-10	2005-08-17	Samsung Electronics Co., Ltd.	Photodiode mit einer durch einen PN-Übergang getrennten lichtabsorbierenden Zone und Herstellungsverfahren dazu
JP4858443B2 (ja) *	2005-07-22	2012-01-18	株式会社ニコン	デジタルカメラ
KR20080058841A (ko) *	2006-12-22	2008-06-26	동부일렉트로닉스 주식회사	수직형 시모스 이미지 센서 및 그 제조 방법
IT1392502B1 (it) *	2008-12-31	2012-03-09	St Microelectronics Srl	Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
US20100163759A1 (en) *	2008-12-31	2010-07-01	Stmicroelectronics S.R.L.	Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
JP2020009790A (ja) *	2016-11-09	2020-01-16	シャープ株式会社	アバランシェフォトダイオード

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4238760A (en) *	1978-10-06	1980-12-09	Recognition Equipment Incorporated	Multi-spectrum photodiode devices
US4366377A (en) *	1980-09-29	1982-12-28	Mcdonnell Douglas Corporation	Dual sensitivity optical sensor
JPS63138784A (ja) *	1986-11-29	1988-06-10	Sharp Corp	半導体受光素子
JPS63187426A (ja) *	1987-01-29	1988-08-03	Sharp Corp	ピツクアツプ用受光素子
US5162887A (en) *	1988-10-31	1992-11-10	Texas Instruments Incorporated	Buried junction photodiode
JP2717839B2 (ja) *	1989-03-20	1998-02-25	松下電子工業株式会社	光半導体装置
JP2670634B2 (ja) *	1990-03-12	1997-10-29	シャープ株式会社	回路内蔵受光素子
JP2678400B2 (ja) *	1990-11-14	1997-11-17	シャープ株式会社	回路内蔵受光素子

1993
- 1993-04-19 JP JP5091269A patent/JP2799540B2/ja not_active Expired - Fee Related
1994
- 1994-04-15 US US08/227,878 patent/US5466962A/en not_active Expired - Lifetime
- 1994-04-19 EP EP94302761A patent/EP0621639B1/de not_active Expired - Lifetime
- 1994-04-19 DE DE69408707T patent/DE69408707T2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH06302844A (ja)	1994-10-28
DE69408707T2 (de)	1998-09-10
US5466962A (en)	1995-11-14
EP0621639B1 (de)	1998-03-04
JP2799540B2 (ja)	1998-09-17
EP0621639A1 (de)	1994-10-26

Publication	Publication Date	Title
DE69328743D1 (de)	2000-06-29	Halbleiteranordnung
DE69334253D1 (de)	2009-02-12	Halbleitervorrichtung
DE69325951D1 (de)	1999-09-16	Halbleitervorrichtung
DE69610457D1 (de)	2000-11-02	Halbleitervorrichtung
KR970004020A (ko)	1997-01-29	반도체장치
KR970005998A (ko)	1997-02-19	반도체 장치
DE69400694D1 (de)	1996-11-14	Halbleitervorrichtung
DE69427158D1 (de)	2001-06-07	Fixiervorrichtung
DE69631940D1 (de)	2004-04-29	Halbleitervorrichtung
DE69408707D1 (de)	1998-04-09	Lichtempfindliche Halbleitervorrichtung
DE69334166D1 (de)	2007-10-25	Entwicklungsvorrichtung
DE59607521D1 (de)	2001-09-27	Halbleiter-Bauelement-Konfiguration
DE69411239D1 (de)	1998-07-30	Lichtempfangendes Halbleiter-Bauelement
DE69217160D1 (de)	1997-03-13	Entwicklungsvorrichtung
EP0723292A3 (de)	1997-07-30	Halbleiteranordnung
DE69430466D1 (de)	2002-05-29	Entwicklungsvorrichtung
EP0730347A3 (de)	1996-10-23	Halbleitervorrichtung
EP0720295A3 (de)	1997-02-05	Halbleitervorrichtung
DE69417788D1 (de)	1999-05-20	Entwicklervorrichtung
DE69124399D1 (de)	1997-03-06	Halbleitervorrichtung
DE69226742D1 (de)	1998-10-01	Halbleitervorrichtung
DE19681689T1 (de)	1998-11-05	Gesichertes Halbleiterbauelement
KR930009747U (ko)	1993-05-26	반도체장치
DE4496282T1 (de)	1995-09-21	Halbleiter-Einrichtung
DE69332214D1 (de)	2002-09-19	Entwicklungsvorrichtung

Legal Events

Date	Code	Title	Description
1999-04-01	8364	No opposition during term of opposition
2010-02-18	8339	Ceased/non-payment of the annual fee