[go: up one dir, main page]

DE69325232D1 - Leistungshalbleitermodul - Google Patents

Leistungshalbleitermodul

Info

Publication number
DE69325232D1
DE69325232D1 DE69325232T DE69325232T DE69325232D1 DE 69325232 D1 DE69325232 D1 DE 69325232D1 DE 69325232 T DE69325232 T DE 69325232T DE 69325232 T DE69325232 T DE 69325232T DE 69325232 D1 DE69325232 D1 DE 69325232D1
Authority
DE
Germany
Prior art keywords
power semiconductor
semiconductor module
module
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325232T
Other languages
English (en)
Other versions
DE69325232T2 (de
Inventor
Osamu Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu General Ltd
Original Assignee
Fujitsu General Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP073068U external-priority patent/JPH0638248U/ja
Priority claimed from JP7306992U external-priority patent/JPH0638246U/ja
Priority claimed from JP7306792U external-priority patent/JP2555796Y2/ja
Application filed by Fujitsu General Ltd filed Critical Fujitsu General Ltd
Application granted granted Critical
Publication of DE69325232D1 publication Critical patent/DE69325232D1/de
Publication of DE69325232T2 publication Critical patent/DE69325232T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69325232T 1992-10-20 1993-10-19 Leistungshalbleitermodul Expired - Fee Related DE69325232T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP073068U JPH0638248U (ja) 1992-10-20 1992-10-20 パワーモジュール
JP7306992U JPH0638246U (ja) 1992-10-20 1992-10-20 パワーモジュール
JP7306792U JP2555796Y2 (ja) 1992-10-20 1992-10-20 パワーモジュール

Publications (2)

Publication Number Publication Date
DE69325232D1 true DE69325232D1 (de) 1999-07-15
DE69325232T2 DE69325232T2 (de) 2000-02-17

Family

ID=27301113

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325232T Expired - Fee Related DE69325232T2 (de) 1992-10-20 1993-10-19 Leistungshalbleitermodul

Country Status (5)

Country Link
US (1) US5398160A (de)
EP (1) EP0594395B1 (de)
KR (1) KR100307465B1 (de)
CN (1) CN1036043C (de)
DE (1) DE69325232T2 (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4418426B4 (de) * 1993-09-08 2007-08-02 Mitsubishi Denki K.K. Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls
JPH06326330A (ja) * 1993-05-13 1994-11-25 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3051011B2 (ja) * 1993-11-18 2000-06-12 株式会社東芝 パワ−モジュ−ル
JPH07147347A (ja) * 1993-11-25 1995-06-06 Matsushita Electric Ind Co Ltd 集積回路装置
JPH07211856A (ja) * 1994-01-12 1995-08-11 Fujitsu Ltd 集積回路モジュール
KR100230894B1 (ko) * 1995-06-22 1999-11-15 구라우치 노리타카 전력증폭모듈
JPH098468A (ja) * 1995-06-22 1997-01-10 Sumitomo Electric Ind Ltd モジュール電子部品
DE19528632A1 (de) * 1995-08-04 1997-02-06 Bosch Gmbh Robert Steuergerät bestehend aus mindestens zwei Gehäuseteilen
JP2795626B2 (ja) * 1995-08-21 1998-09-10 北川工業株式会社 放熱機能付き電子部品
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
JPH09148523A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 半導体装置
US5892279A (en) * 1995-12-11 1999-04-06 Northrop Grumman Corporation Packaging for electronic power devices and applications using the packaging
US6008988A (en) * 1995-12-20 1999-12-28 Intel Corporation Integrated circuit package with a heat spreader coupled to a pair of electrical devices
US5960535A (en) * 1997-10-28 1999-10-05 Hewlett-Packard Company Heat conductive substrate press-mounted in PC board hole for transferring heat from IC to heat sink
RU2133523C1 (ru) * 1997-11-03 1999-07-20 Закрытое акционерное общество "Техно-ТМ" Трехмерный электронный модуль
DE19750306A1 (de) * 1997-11-13 1999-05-20 Bosch Gmbh Robert Elektronisches Steuergerät
US6147869A (en) * 1997-11-24 2000-11-14 International Rectifier Corp. Adaptable planar module
CA2255441C (en) * 1997-12-08 2003-08-05 Hiroki Sekiya Package for semiconductor power device and method for assembling the same
US5926372A (en) * 1997-12-23 1999-07-20 Ford Global Technologies, Inc. Power block assembly and method of making same
US6201701B1 (en) 1998-03-11 2001-03-13 Kimball International, Inc. Integrated substrate with enhanced thermal characteristics
FR2776462B1 (fr) * 1998-03-19 2000-05-19 Schneider Electric Sa Module de composants electroniques de puissance
DE19900603A1 (de) * 1999-01-11 2000-07-13 Bosch Gmbh Robert Elektronisches Halbleitermodul
JP3747699B2 (ja) * 1999-08-06 2006-02-22 富士電機デバイステクノロジー株式会社 半導体装置
DE19953191A1 (de) * 1999-11-05 2001-05-10 Bosch Gmbh Robert Elektronisches Steuergerät
US6295200B1 (en) * 2000-02-23 2001-09-25 Motorola, Inc. Carrier assembly and method
JP3634735B2 (ja) * 2000-10-05 2005-03-30 三洋電機株式会社 半導体装置および半導体モジュール
KR100403608B1 (ko) * 2000-11-10 2003-11-01 페어차일드코리아반도체 주식회사 스택구조의 인텔리젠트 파워 모듈 패키지 및 그 제조방법
DE10064979C1 (de) * 2000-12-18 2002-02-28 Dieter Loewer Schaltungsanordnung und Verfahren zur Herstellung einer solchen Anordnung
US6455925B1 (en) * 2001-03-27 2002-09-24 Ericsson Inc. Power transistor package with integrated flange for surface mount heat removal
AU2002315755B2 (en) * 2001-07-09 2004-10-21 Daikin Industries, Ltd. Power module and air conditioner
JP2003125588A (ja) * 2001-10-12 2003-04-25 Mitsubishi Electric Corp 電力変換装置
EP1324386B1 (de) * 2001-12-24 2011-06-15 ABB Research Ltd. Halbleitermodul und Verfahren zum Herstellen eines Halbleitermoduls
US6841413B2 (en) 2002-01-07 2005-01-11 Intel Corporation Thinned die integrated circuit package
US20050136640A1 (en) * 2002-01-07 2005-06-23 Chuan Hu Die exhibiting an effective coefficient of thermal expansion equivalent to a substrate mounted thereon, and processes of making same
DE10213648B4 (de) * 2002-03-27 2011-12-15 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
JP3910497B2 (ja) * 2002-07-03 2007-04-25 株式会社オートネットワーク技術研究所 電力回路部の防水方法及び電力回路部をもつパワーモジュール
JP2004088989A (ja) * 2002-07-03 2004-03-18 Auto Network Gijutsu Kenkyusho:Kk 電力回路部の防水方法
US7057896B2 (en) * 2002-08-21 2006-06-06 Matsushita Electric Industrial Co., Ltd. Power module and production method thereof
JP3740117B2 (ja) * 2002-11-13 2006-02-01 三菱電機株式会社 電力用半導体装置
EP1424728A1 (de) * 2002-11-27 2004-06-02 Abb Research Ltd. Leistungshalbleitermodul
US6983918B1 (en) * 2002-12-31 2006-01-10 Leasure Richard L Drink holder
EP1465250A1 (de) * 2003-04-02 2004-10-06 Abb Research Ltd. Isolierter Leistungshalbleitermodul mit verringerter Teilentladung und Verfahren zu seiner Herstellung
DE10316136A1 (de) * 2003-04-09 2004-11-18 Ixys Semiconductor Gmbh Gekapselte Leistungshalbleiteranordnung
US6775145B1 (en) * 2003-05-14 2004-08-10 Cyntec Co., Ltd. Construction for high density power module package (case II)
US20050231922A1 (en) * 2004-04-16 2005-10-20 Jung-Chien Chang Functional printed circuit board module with an embedded chip
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
JP4466256B2 (ja) * 2004-07-29 2010-05-26 アイシン・エィ・ダブリュ株式会社 自動変速機用電子制御装置
JP4207896B2 (ja) * 2005-01-19 2009-01-14 富士電機デバイステクノロジー株式会社 半導体装置
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
EP1897146A2 (de) * 2005-06-27 2008-03-12 Lamina Lighting, Inc. Lichtemissionsdiodenpackung und herstellungsverfahren dafür
JP2007010042A (ja) * 2005-06-30 2007-01-18 Denso Corp 車両制御システム
DE102005049872B4 (de) * 2005-10-18 2010-09-23 Continental Automotive Gmbh IC-Bauelement mit Kühlanordnung
US20070267216A1 (en) * 2006-05-16 2007-11-22 Li-Wei Kuo Base of a circuit board with a heat dissipating capability
JP4858290B2 (ja) * 2006-06-05 2012-01-18 株式会社デンソー 負荷駆動装置
TWI340010B (en) * 2006-08-04 2011-04-01 Everlight Electronics Co Ltd Circuit board with cooling functionality
EP1968188B1 (de) * 2007-03-09 2012-08-08 HÜTTINGER Elektronik GmbH + Co. KG Klasse-D Verstärkeranordnung
US7561430B2 (en) * 2007-04-30 2009-07-14 Watlow Electric Manufacturing Company Heat management system for a power switching device
JP4523632B2 (ja) * 2007-12-11 2010-08-11 三菱電機株式会社 半導体装置
DE102008001414A1 (de) * 2008-04-28 2009-10-29 Robert Bosch Gmbh Substrat-Schaltungsmodul mit Bauteilen in mehreren Kontaktierungsebenen
CN101841994B (zh) * 2009-03-21 2013-06-12 富瑞精密组件（昆山）有限公司 便携式电子装置及其可插式散热装置
FR2947679A1 (fr) * 2009-07-03 2011-01-07 Valeo Equip Electr Moteur Machine electrique tournante equipee d'un module electronique de puissance perfectionne
US8547709B2 (en) * 2010-02-12 2013-10-01 Cyntec Co. Ltd. Electronic system with a composite substrate
JP5870777B2 (ja) * 2012-03-09 2016-03-01 富士電機株式会社 半導体装置およびその製造方法
CN102655732A (zh) * 2012-05-12 2012-09-05 浙江大学 带有散热结构的功率模块基板
CN103051188B (zh) * 2012-12-07 2015-03-11 聚信科技有限公司 一种隔离直流电源模块
FR3004058B1 (fr) * 2013-03-26 2016-12-16 Valeo Systemes Thermiques Module de commande d'un appareil electrique
CN103237412B (zh) 2013-03-27 2016-03-23 苏州远创达科技有限公司 一种电子件安装结构及制作方法、电子件产品
JP2015026820A (ja) * 2013-06-18 2015-02-05 株式会社デンソー 電子装置
CN104632717B (zh) * 2013-11-12 2017-04-12 巨铠实业股份有限公司 吊扇控制器置放盒的散热结构
CN205105500U (zh) * 2015-08-06 2016-03-23 台达电子企业管理（上海）有限公司 散热器与电源模块
CN106684076B (zh) * 2015-11-05 2019-09-06 台达电子企业管理（上海）有限公司 封装结构及其制造方法
US9698076B1 (en) * 2015-12-22 2017-07-04 Ksr Ip Holdings Llc. Metal slugs for double-sided cooling of power module
US9866213B1 (en) 2016-09-08 2018-01-09 United Silicon Carbide, Inc. High voltage switch module
CN106328610B (zh) * 2016-09-25 2018-12-07 绍兴柯桥东进纺织有限公司 一种多模式集成电路封装装置
US10431477B2 (en) * 2016-11-29 2019-10-01 Pep Innovation Pte Ltd. Method of packaging chip and chip package structure
CN107481978A (zh) * 2017-08-24 2017-12-15 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN107393886A (zh) * 2017-08-24 2017-11-24 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN109300795B (zh) * 2018-09-27 2020-05-19 江苏矽智半导体科技有限公司 一种半导体功率器件封装及其制备方法
CN109780690A (zh) * 2018-11-28 2019-05-21 珠海格力电器股份有限公司 一种无线智能功率模块、控制方法及变频空调器
SE543734C2 (en) * 2019-03-11 2021-07-06 Apr Tech Ab Cooling of electronic components with an electrohydrodynamic flow unit
CN109979909A (zh) * 2019-04-30 2019-07-05 烟台艾睿光电科技有限公司 一种wlp器件
CN113161337B (zh) * 2021-03-29 2025-05-16 广东汇芯半导体有限公司 智能功率模块

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933894A (ja) * 1982-08-19 1984-02-23 電気化学工業株式会社 混成集積用回路基板の製造法
DE3684184D1 (de) * 1985-06-20 1992-04-16 Toshiba Kawasaki Kk Verkapselte halbleiteranordnung.
JPH0364049A (ja) * 1989-08-02 1991-03-19 Hitachi Ltd 混成集積回路装置
JPH0376255A (ja) * 1989-08-18 1991-04-02 Fujitsu Ltd 半導体装置の実装構造
US5095404A (en) * 1990-02-26 1992-03-10 Data General Corporation Arrangement for mounting and cooling high density tab IC chips
JPH04105350A (ja) * 1990-08-24 1992-04-07 Fujitsu Ltd 半導体チップの実装構造
JPH04112560A (ja) * 1990-08-31 1992-04-14 Sanyo Electric Co Ltd 混成集積回路
US5287247A (en) * 1990-09-21 1994-02-15 Lsi Logic Corporation Computer system module assembly
JP2901091B2 (ja) * 1990-09-27 1999-06-02 株式会社日立製作所 半導体装置
JPH0547968A (ja) * 1991-08-20 1993-02-26 Fujitsu Ltd 電子装置の冷却構造
US5272375A (en) * 1991-12-26 1993-12-21 E. I. Du Pont De Nemours And Company Electronic assembly with optimum heat dissipation
JP2677735B2 (ja) * 1992-05-22 1997-11-17 三菱電機株式会社 混成集積回路装置

Also Published As

Publication number Publication date
EP0594395A3 (de) 1995-01-11
KR100307465B1 (ko) 2001-12-15
DE69325232T2 (de) 2000-02-17
CN1036043C (zh) 1997-10-01
EP0594395B1 (de) 1999-06-09
EP0594395A2 (de) 1994-04-27
CN1086373A (zh) 1994-05-04
KR940010293A (ko) 1994-05-24
US5398160A (en) 1995-03-14

Similar Documents

Publication Publication Date Title
DE69319026D1 (de) Halbleiter-Leistungsmodul
DE69325232D1 (de) Leistungshalbleitermodul
DE69325953D1 (de) Leistungshalbleitermodul
DE59304797D1 (de) Leistungshalbleiter-Modul
DE69220653D1 (de) Halbleiterleistungsmodul
DE69318658D1 (de) Leistungs-Halbeiterbauelement
DE69638295D1 (de) Halbleiterleistungsmodul
DE59611245D1 (de) Leistungshalbleitermodul
DE59504782D1 (de) Niederinduktives Leistungshalbleitermodul
DE69303633D1 (de) Mehrchipmodul
DE69320750D1 (de) Halbleiterlasermodul
DE69233450D1 (de) Halbleitermodul
DE69420327D1 (de) Halbleiter-Leistungsschaltung
DE59008471D1 (de) Leistungshalbleitermodul.
FI961176L (fi) Monisiruinen moduuli
DE59406106D1 (de) Leistungshalbleiterbauelement
DE69329103D1 (de) Leistungsmodulkühlsystem
DE69433736D1 (de) Mehrchipmodul
DE59207777D1 (de) Sende-/empfangsmodul
DE69414337D1 (de) Leistungs-Halbleiter-Schaltmodul
DE69425521D1 (de) Halbleitermodulbauteil
DE69213386D1 (de) Halbleiterlasermodul
DE59508681D1 (de) Leistungshalbleitermodul
DE59611068D1 (de) Leistungs-Halbleitermodul
DE59308771D1 (de) Halbleiter-Lasermodul

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee