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DE69302241D1 - Siliciumnitridpulver mit hoher Packungsdichte und Verfahren zu seiner Herstellung - Google Patents

Siliciumnitridpulver mit hoher Packungsdichte und Verfahren zu seiner Herstellung

Info

Publication number
DE69302241D1
DE69302241D1 DE69302241T DE69302241T DE69302241D1 DE 69302241 D1 DE69302241 D1 DE 69302241D1 DE 69302241 T DE69302241 T DE 69302241T DE 69302241 T DE69302241 T DE 69302241T DE 69302241 D1 DE69302241 D1 DE 69302241D1
Authority
DE
Germany
Prior art keywords
manufacture
silicon nitride
packing density
nitride powder
high packing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69302241T
Other languages
English (en)
Other versions
DE69302241T2 (de
Inventor
Haruyoshi Kuwabara
Akio Otsuka
Yasuyuki Maki
Meguru Kashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16574888&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69302241(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE69302241D1 publication Critical patent/DE69302241D1/de
Application granted granted Critical
Publication of DE69302241T2 publication Critical patent/DE69302241T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0682—Preparation by direct nitridation of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0687—After-treatment, e.g. grinding, purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/54—Particles characterised by their aspect ratio, i.e. the ratio of sizes in the longest to the shortest dimension
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Ceramic Products (AREA)
DE69302241T 1992-07-14 1993-07-08 Siliciumnitridpulver mit hoher Packungsdichte und Verfahren zu seiner Herstellung Expired - Fee Related DE69302241T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4209562A JP2699770B2 (ja) 1992-07-14 1992-07-14 高充填性窒化ケイ素粉末及びその製造方法

Publications (2)

Publication Number Publication Date
DE69302241D1 true DE69302241D1 (de) 1996-05-23
DE69302241T2 DE69302241T2 (de) 1996-12-12

Family

ID=16574888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69302241T Expired - Fee Related DE69302241T2 (de) 1992-07-14 1993-07-08 Siliciumnitridpulver mit hoher Packungsdichte und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US5348919A (de)
EP (1) EP0581080B1 (de)
JP (1) JP2699770B2 (de)
DE (1) DE69302241T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0651419B1 (de) * 1993-10-28 1998-06-24 Koninklijke Philips Electronics N.V. Vorratskathode und Herstellungsverfahren
JP3314554B2 (ja) * 1993-12-10 2002-08-12 宇部興産株式会社 窒化珪素粉末及び窒化珪素含有水系スラリー
JP3279128B2 (ja) * 1994-08-12 2002-04-30 宇部興産株式会社 窒化珪素粉末
DE102005050364A1 (de) * 2005-10-20 2007-06-06 Wacker Chemie Ag Verfahren zur Herstellung von hochreinen Si3N4-Pulvern
US8047288B2 (en) 2007-07-18 2011-11-01 Oxane Materials, Inc. Proppants with carbide and/or nitride phases
CN112138835B (zh) * 2020-09-02 2023-09-26 郑州中南杰特超硬材料有限公司 一种立方氮化硼的整形方法及其应用
CN119114216B (zh) * 2024-09-09 2025-03-25 江苏富乐华功率半导体研究院有限公司 一种高导热氮化硅浆料的制浆工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5860677A (ja) * 1981-09-30 1983-04-11 日本特殊陶業株式会社 高靭性窒化珪素焼結体の製造法
JPS5921506A (ja) * 1982-07-27 1984-02-03 Ube Ind Ltd 結晶質窒化ケイ素粉末の製法
US4521358A (en) * 1982-08-12 1985-06-04 Agency Of Industrial Science & Technology Process for the production of silicon nitride sintered bodies
US4716133A (en) * 1986-03-31 1987-12-29 Kyocera Corporation Method for production of silicon nitride sintered body
JPS63185864A (ja) * 1986-09-05 1988-08-01 株式会社日立製作所 複合セラミツクスおよびその製法
US4970057A (en) * 1989-04-28 1990-11-13 Norton Company Silicon nitride vacuum furnace process

Also Published As

Publication number Publication date
JP2699770B2 (ja) 1998-01-19
JPH0632659A (ja) 1994-02-08
EP0581080A1 (de) 1994-02-02
EP0581080B1 (de) 1996-04-17
DE69302241T2 (de) 1996-12-12
US5348919A (en) 1994-09-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee