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DE69209426D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69209426D1
DE69209426D1 DE69209426T DE69209426T DE69209426D1 DE 69209426 D1 DE69209426 D1 DE 69209426D1 DE 69209426 T DE69209426 T DE 69209426T DE 69209426 T DE69209426 T DE 69209426T DE 69209426 D1 DE69209426 D1 DE 69209426D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209426T
Other languages
English (en)
Other versions
DE69209426T2 (de
Inventor
Tomoji Terakado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69209426D1 publication Critical patent/DE69209426D1/de
Application granted granted Critical
Publication of DE69209426T2 publication Critical patent/DE69209426T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69209426T 1991-10-08 1992-10-08 Halbleiterlaser Expired - Fee Related DE69209426T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3259506A JP2814786B2 (ja) 1991-10-08 1991-10-08 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69209426D1 true DE69209426D1 (de) 1996-05-02
DE69209426T2 DE69209426T2 (de) 1996-09-19

Family

ID=17335051

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209426T Expired - Fee Related DE69209426T2 (de) 1991-10-08 1992-10-08 Halbleiterlaser

Country Status (4)

Country Link
US (1) US5309467A (de)
EP (1) EP0536757B1 (de)
JP (1) JP2814786B2 (de)
DE (1) DE69209426T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5789772A (en) * 1994-07-15 1998-08-04 The Whitaker Corporation Semi-insulating surface light emitting devices
US5629232A (en) * 1994-11-14 1997-05-13 The Whitaker Corporation Method of fabricating semiconductor light emitting devices
US5608234A (en) * 1994-11-14 1997-03-04 The Whitaker Corporation Semi-insulating edge emitting light emitting diode
EP0712169A1 (de) 1994-11-14 1996-05-15 The Whitaker Corporation Randemittierende Leuchtdiode mit semi-isolierender Schicht
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
EP1130724A1 (de) * 2000-03-03 2001-09-05 Alpes Lasers Quantenkaskadierter Laser und sein Herstellungsverfahren
JP5834461B2 (ja) * 2011-04-14 2015-12-24 日本電気株式会社 半導体レーザモジュール及びその製造方法
JP6158590B2 (ja) * 2013-05-22 2017-07-05 株式会社デンソー 半導体レーザ
JP6158591B2 (ja) * 2013-05-22 2017-07-05 株式会社デンソー 半導体レーザ
JP2017537481A (ja) * 2014-12-03 2017-12-14 アルプ レイザーズ ソシエテ アノニムＡｌｐｅｓ Ｌａｓｅｒｓ Ｓ．Ａ． 電流ブロック層を有する量子カスケードレーザ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873178A (ja) * 1981-10-27 1983-05-02 Fujitsu Ltd 半導体発光装置
JPS58219789A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd 埋込み型光半導体装置
JPS59119719A (ja) * 1982-12-24 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPS61228693A (ja) * 1985-04-02 1986-10-11 Fujitsu Ltd 半導体発光装置
JPS63169086A (ja) * 1987-01-06 1988-07-13 Fujikura Ltd 埋込型半導体レ−ザの製造方法
JPH0732292B2 (ja) * 1987-06-17 1995-04-10 富士通株式会社 半導体発光装置
JPH0831659B2 (ja) * 1988-05-27 1996-03-27 富士通株式会社 半導体発光素子の製造方法
US5073805A (en) * 1989-02-06 1991-12-17 Optoelectronics Technology Research Corporation Semiconductor light emitting device including a hole barrier contiguous to an active layer
JPH0371679A (ja) * 1989-08-11 1991-03-27 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子

Also Published As

Publication number Publication date
JPH05102600A (ja) 1993-04-23
EP0536757A1 (de) 1993-04-14
US5309467A (en) 1994-05-03
JP2814786B2 (ja) 1998-10-27
EP0536757B1 (de) 1996-03-27
DE69209426T2 (de) 1996-09-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee