[go: up one dir, main page]

DE69115555D1 - Halbleiterlaser - Google Patents

Halbleiterlaser

Info

Publication number
DE69115555D1
DE69115555D1 DE69115555T DE69115555T DE69115555D1 DE 69115555 D1 DE69115555 D1 DE 69115555D1 DE 69115555 T DE69115555 T DE 69115555T DE 69115555 T DE69115555 T DE 69115555T DE 69115555 D1 DE69115555 D1 DE 69115555D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115555T
Other languages
English (en)
Other versions
DE69115555T2 (de
Inventor
Koichi Nitta
Yukie Nishikawa
Minoru Watanabe
Genichi Hatakoshi
Masayuki Ishikawa
Masayuki Sugawara
Masaki Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02221281A external-priority patent/JP3135250B2/ja
Priority claimed from JP03001082A external-priority patent/JP3115006B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69115555D1 publication Critical patent/DE69115555D1/de
Publication of DE69115555T2 publication Critical patent/DE69115555T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2209—GaInP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69115555T 1990-05-07 1991-05-03 Halbleiterlaser Expired - Fee Related DE69115555T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11734690 1990-05-07
JP02221281A JP3135250B2 (ja) 1990-08-24 1990-08-24 半導体レーザ装置
JP03001082A JP3115006B2 (ja) 1990-05-07 1991-01-09 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69115555D1 true DE69115555D1 (de) 1996-02-01
DE69115555T2 DE69115555T2 (de) 1996-09-05

Family

ID=27274752

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115555T Expired - Fee Related DE69115555T2 (de) 1990-05-07 1991-05-03 Halbleiterlaser

Country Status (3)

Country Link
US (1) US5202895A (de)
EP (1) EP0456429B1 (de)
DE (1) DE69115555T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69104650T2 (de) * 1990-06-05 1995-03-30 Matsushita Electric Ind Co Ltd Verfahren zur Herstellung eines Halbleiterlasers.
US5276698A (en) * 1990-09-20 1994-01-04 Sumitomo Electric Ind., Ltd. Semiconductor laser having an optical waveguide layer including an AlGaInP active layer
JP3135960B2 (ja) * 1991-12-20 2001-02-19 シャープ株式会社 半導体レーザ装置
JPH05243676A (ja) * 1992-02-28 1993-09-21 Mitsubishi Electric Corp 半導体レーザ装置
JPH07162089A (ja) * 1993-12-13 1995-06-23 Mitsubishi Electric Corp 可視光レーザダイオード及びその製造方法
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
JP3553147B2 (ja) * 1994-09-05 2004-08-11 三菱電機株式会社 半導体層の製造方法
US5727012A (en) * 1996-03-07 1998-03-10 Lucent Technologies Inc. Heterostructure laser
JPH10321903A (ja) * 1997-05-15 1998-12-04 Rohm Co Ltd 半導体発光素子およびその製法
KR100495220B1 (ko) * 2003-06-25 2005-06-14 삼성전기주식회사 고차모드 흡수층을 갖는 반도체 레이저 다이오드
US20050281298A1 (en) * 2004-04-02 2005-12-22 K2 Optronics Analog external cavity laser
US8063397B2 (en) * 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device
JPH0650723B2 (ja) * 1984-10-17 1994-06-29 日本電気株式会社 エピタキシヤル成長方法
US4799228A (en) * 1985-08-23 1989-01-17 Kabushiki Kaisha Toshiba Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide
DE3789695T2 (de) * 1986-08-08 1994-08-25 Toshiba Kawasaki Kk Doppelheterostruktur-Halbleiterlaser mit streifenförmigem Mesa-Wellenleiter.
DE68909632T2 (de) * 1988-02-09 1994-03-10 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
US4893313A (en) * 1988-03-14 1990-01-09 Kabushiki Kaisha Toshiba Semiconductor laser device which has a double-hetero structure having an optimal layer thickness
JP2685209B2 (ja) * 1988-03-25 1997-12-03 株式会社東芝 半導体装置及び半導体発光装置
JP2721185B2 (ja) * 1988-07-25 1998-03-04 株式会社東芝 リブ導波路型発光半導体装置
CA2028899C (en) * 1989-10-31 1997-03-04 Teturo Ijichi Semiconductor laser elements and method for the production thereof

Also Published As

Publication number Publication date
DE69115555T2 (de) 1996-09-05
US5202895A (en) 1993-04-13
EP0456429B1 (de) 1995-12-20
EP0456429A2 (de) 1991-11-13
EP0456429A3 (en) 1992-03-11

Similar Documents

Publication Publication Date Title
DE69220434D1 (de) Halbleiterlaser
NO914521D0 (no) Laser
DE69132627D1 (de) Halbleiter-bauteil
DE69305928D1 (de) Halbleiterlaser
DE69407455D1 (de) Halbleiterlaser
DE69104429D1 (de) Optisches Halbleiterbauelement.
DE69129281D1 (de) Optischer Halbleiterverstärker
DE69120185D1 (de) Halbleiterlaser
DE69411364D1 (de) Halbleiterlaser
DE69212938D1 (de) Halbleiterlaser
DE69218802D1 (de) Halbleiterlaser
DE68908646D1 (de) Halbleiterlaser.
DE69009448D1 (de) Halbleiterlaseranordnung.
DE69213386D1 (de) Halbleiterlasermodul
DE69223737D1 (de) Halbleiterlaser
DE69209045D1 (de) Halbleiterlaser
DE69217679D1 (de) Halbleiterlaser
DE59107315D1 (de) Einzelmode-laser
DE69227403D1 (de) Halbleiterlaser
DE69018732D1 (de) Halbleiterlaser.
DE69315303D1 (de) Halbleiterlaser-Element
DE69115622D1 (de) Halbleiterlaser-Verstärker
DE69005132D1 (de) Halbleiterlaser.
DE69115555D1 (de) Halbleiterlaser
DE69226027D1 (de) Halbleiterlaser

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee