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DE69032303D1 - Halbleiter-Speichereinrichtung - Google Patents

Halbleiter-Speichereinrichtung

Info

Publication number
DE69032303D1
DE69032303D1 DE69032303T DE69032303T DE69032303D1 DE 69032303 D1 DE69032303 D1 DE 69032303D1 DE 69032303 T DE69032303 T DE 69032303T DE 69032303 T DE69032303 T DE 69032303T DE 69032303 D1 DE69032303 D1 DE 69032303D1
Authority
DE
Germany
Prior art keywords
storage device
semiconductor storage
semiconductor
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032303T
Other languages
English (en)
Other versions
DE69032303T2 (de
Inventor
Koji Sakui
Tsuneaki Fuse
Takehiro Hasegawa
Shigeyoshi Watanabe
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69032303D1 publication Critical patent/DE69032303D1/de
Publication of DE69032303T2 publication Critical patent/DE69032303T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE69032303T 1989-03-31 1990-03-29 Halbleiter-Speichereinrichtung Expired - Fee Related DE69032303T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8357589 1989-03-31
JP18423889 1989-07-17

Publications (2)

Publication Number Publication Date
DE69032303D1 true DE69032303D1 (de) 1998-06-18
DE69032303T2 DE69032303T2 (de) 1998-09-24

Family

ID=26424613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032303T Expired - Fee Related DE69032303T2 (de) 1989-03-31 1990-03-29 Halbleiter-Speichereinrichtung

Country Status (4)

Country Link
US (1) US5060194A (de)
EP (1) EP0393863B1 (de)
KR (1) KR930002288B1 (de)
DE (1) DE69032303T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203095A (ja) * 1989-12-28 1991-09-04 Texas Instr Japan Ltd 半導体記憶装置
TW260816B (de) * 1991-12-16 1995-10-21 Philips Nv
TW289168B (de) * 1991-12-16 1996-10-21 Philips Nv
JP3154843B2 (ja) * 1992-11-26 2001-04-09 株式会社東芝 半導体記憶装置
US5448513A (en) * 1993-12-02 1995-09-05 Regents Of The University Of California Capacitorless DRAM device on silicon-on-insulator substrate
US5594683A (en) * 1995-04-07 1997-01-14 Chen; Ming-Jer SRAM cell using a CMOS compatible high gain gated lateral BJT
US5761114A (en) * 1997-02-19 1998-06-02 International Business Machines Corporation Multi-level storage gain cell with stepline
US5909400A (en) * 1997-08-22 1999-06-01 International Business Machines Corporation Three device BICMOS gain cell
JPH1187659A (ja) * 1997-09-05 1999-03-30 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5872032A (en) * 1997-11-03 1999-02-16 Vanguard International Semiconductor Corporation Fabrication method for a DRAM cell with bipolar charge amplification
IE20001068A1 (en) 1999-12-22 2001-07-11 Nat Univ Ireland Cork A negative resistance device
EP1178540B1 (de) * 2000-07-31 2014-10-22 Micron Technology, Inc. Nichtflüchtige Speicherzelle mit hoher Programmierungsleistung
JP2007242923A (ja) * 2006-03-09 2007-09-20 Matsushita Electric Ind Co Ltd 半導体集積回路の静電気保護素子
US8537609B2 (en) * 2011-06-15 2013-09-17 Macronix International Co., Ltd. Memory device and method of operating the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3827034A (en) * 1972-09-14 1974-07-30 Ferranti Ltd Semiconductor information storage devices
US4037243A (en) * 1974-07-01 1977-07-19 Motorola, Inc. Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data
US4090254A (en) * 1976-03-01 1978-05-16 International Business Machines Corporation Charge injector transistor memory
US4276616A (en) * 1979-04-23 1981-06-30 Fairchild Camera & Instrument Corp. Merged bipolar/field-effect bistable memory cell
JPS56163585A (en) * 1980-05-17 1981-12-16 Semiconductor Res Found Semiconductor memory
US4395723A (en) * 1980-05-27 1983-07-26 Eliyahou Harari Floating substrate dynamic RAM cell with lower punch-through means
US4323986A (en) * 1980-06-30 1982-04-06 International Business Machines Corporation Electronic storage array having DC stable conductivity modulated storage cells
US4431305A (en) * 1981-07-30 1984-02-14 International Business Machines Corporation High density DC stable memory cell
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
US4791611A (en) * 1985-09-11 1988-12-13 University Of Waterloo VLSI dynamic memory
CA1291224C (en) * 1985-10-12 1991-10-22 Naoki Yokoyama Logic circuit using resonant-tunneling transistor
US4821235A (en) * 1986-04-17 1989-04-11 Fairchild Semiconductor Corporation Translinear static memory cell with bipolar and MOS devices
US4727046A (en) * 1986-07-16 1988-02-23 Fairchild Semiconductor Corporation Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases
US4901127A (en) * 1988-10-07 1990-02-13 General Electric Company Circuit including a combined insulated gate bipolar transistor/MOSFET

Also Published As

Publication number Publication date
EP0393863A2 (de) 1990-10-24
DE69032303T2 (de) 1998-09-24
US5060194A (en) 1991-10-22
KR900015328A (ko) 1990-10-26
EP0393863B1 (de) 1998-05-13
EP0393863A3 (de) 1993-03-17
KR930002288B1 (ko) 1993-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee