DE69019438D1 - MOS-Typ-Halbleiterspeicheranordnung. - Google Patents

MOS-Typ-Halbleiterspeicheranordnung.

Info

Publication number: DE69019438D1
Authority: DE; Germany
Prior art keywords: memory device; type semiconductor; semiconductor memory; mos type; mos
Prior art date: 1989-08-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69019438T

Other languages

English (en)

Other versions

DE69019438T2 (de

Inventor

Yoshinori Matsui

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-08-30

Filing date

1990-08-30

Publication date

1995-06-22

1990-08-30 Application filed by NEC Corp filed Critical NEC Corp

1995-06-22 Application granted granted Critical

1995-06-22 Publication of DE69019438D1 publication Critical patent/DE69019438D1/de

1996-01-04 Publication of DE69019438T2 publication Critical patent/DE69019438T2/de

2010-08-31 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Dram (AREA)
Static Random-Access Memory (AREA)
For Increasing The Reliability Of Semiconductor Memories (AREA)
Semiconductor Memories (AREA)

DE69019438T 1989-08-30 1990-08-30 MOS-Typ-Halbleiterspeicheranordnung. Expired - Fee Related DE69019438T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP1226080A JP2737293B2 (ja)	1989-08-30	1989-08-30	Ｍｏｓ型半導体記憶装置

Publications (2)

Publication Number	Publication Date
DE69019438D1 true DE69019438D1 (de)	1995-06-22
DE69019438T2 DE69019438T2 (de)	1996-01-04

Family

ID=16839509

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69019438T Expired - Fee Related DE69019438T2 (de)	1989-08-30	1990-08-30	MOS-Typ-Halbleiterspeicheranordnung.

Country Status (4)

Country	Link
US (1)	US5113374A (de)
EP (1)	EP0415408B1 (de)
JP (1)	JP2737293B2 (de)
DE (1)	DE69019438T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04225182A (ja) *	1990-12-26	1992-08-14	Toshiba Corp	半導体記憶装置
JPH056675A (ja) *	1991-06-27	1993-01-14	Nec Corp	スタテイツク型半導体メモリ装置
JP2870320B2 (ja) *	1992-09-29	1999-03-17	日本電気株式会社	半導体メモリ回路
JP2842181B2 (ja) *	1993-11-04	1998-12-24	日本電気株式会社	半導体メモリ装置
JP3337564B2 (ja) *	1994-09-16	2002-10-21	松下電器産業株式会社	半導体記憶装置
US5491663A (en) *	1994-11-30	1996-02-13	Sgs-Thomson Microelectronics, Inc.	Pre-charged slave latch with parallel previous state memory
JP3068426B2 (ja) *	1994-12-21	2000-07-24	日本電気株式会社	半導体記憶装置
JP3631277B2 (ja) *	1995-01-27	2005-03-23	株式会社日立製作所	メモリモジュール
DE19823956A1 (de) *	1998-05-28	1999-12-02	Siemens Ag	Anordnung zur Übersprechdämpfung in Wortleitungen von DRAM-Schaltungen
JP2000243089A (ja) *	1999-02-19	2000-09-08	Fujitsu Ltd	デコーダ回路及びデコード方法
JP2011040161A (ja) *	2000-03-24	2011-02-24	Renesas Electronics Corp	半導体記憶装置
WO2004077444A1 (ja)	2003-02-27	2004-09-10	Fujitsu Limited	半導体記憶装置及びそのリフレッシュ方法
JP2005174426A (ja) *	2003-12-09	2005-06-30	Micron Technology Inc	選択可能メモリワード線の不活性化
KR100845774B1 (ko) *	2006-10-13	2008-07-14	주식회사 하이닉스반도체	반도체 메모리 장치 및 이를 이용한 전압 제어 방법
US20090307891A1 (en) *	2008-06-17	2009-12-17	Ge-Hitachi Nuclear Energy Americas Llc	Method and apparatus for remotely inspecting and/or treating welds, pipes, vessels and/or other components used in reactor coolant systems or other process applications

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6027115B2 (ja) *	1977-10-19	1985-06-27	株式会社日立製作所	Ｒａｍ半導体集積回路
JPS56143587A (en) *	1980-03-26	1981-11-09	Fujitsu Ltd	Static type memory circuit
US4539661A (en) *	1982-06-30	1985-09-03	Fujitsu Limited	Static-type semiconductor memory device
JPS6113497A (ja) *	1984-06-29	1986-01-21	Fujitsu Ltd	半導体記憶装置
JPS61194695A (ja) *	1985-02-22	1986-08-29	Nippon Telegr & Teleph Corp <Ntt>	ワ−ド線クランプ回路
JPS6212996A (ja) *	1985-07-10	1987-01-21	Mitsubishi Electric Corp	半導体記憶装置
US4691302A (en) *	1985-09-04	1987-09-01	Siemens Aktiengesellschaft	Circuit arrangement comprising a matrix-shaped memory arrangement for variably adjustable delay of digital signals
JPS62114200A (ja) *	1985-11-13	1987-05-25	Mitsubishi Electric Corp	半導体メモリ装置

1989
- 1989-08-30 JP JP1226080A patent/JP2737293B2/ja not_active Expired - Lifetime
1990
- 1990-08-30 DE DE69019438T patent/DE69019438T2/de not_active Expired - Fee Related
- 1990-08-30 US US07/574,729 patent/US5113374A/en not_active Expired - Fee Related
- 1990-08-30 EP EP90116650A patent/EP0415408B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE69019438T2 (de)	1996-01-04
EP0415408A3 (en)	1993-05-05
US5113374A (en)	1992-05-12
EP0415408A2 (de)	1991-03-06
EP0415408B1 (de)	1995-05-17
JP2737293B2 (ja)	1998-04-08
JPH0388195A (ja)	1991-04-12

Publication	Publication Date	Title
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE69007827D1 (de)	1994-05-11	Halbleiter-Speicher.
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
EP0588402A3 (de)	1995-07-19	Halbleiterspeicheranordnung.
DE68911044D1 (de)	1994-01-13	Halbleiterspeicher.
DE3875767D1 (de)	1992-12-17	Halbleiter-festwertspeichereinrichtung.
DE69016153D1 (de)	1995-03-02	Nichtflüchtige Halbleiterspeicheranordnung.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE69022537D1 (de)	1995-10-26	Halbleiterspeicheranordnung.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE68923624D1 (de)	1995-08-31	Halbleiterspeicheranordnung.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE69017518D1 (de)	1995-04-13	Halbleiterspeicheranordnung.
DE68918193D1 (de)	1994-10-20	Halbleiterspeicher.
DE3865702D1 (de)	1991-11-28	Halbleiter-festwertspeichereinrichtung.
DE69019438D1 (de)	1995-06-22	MOS-Typ-Halbleiterspeicheranordnung.
NL194178B (nl)	2001-04-02	Halfgeleidergeheugeneenheid.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE68923899D1 (de)	1995-09-28	Halbleiterspeicher.
DE69015667D1 (de)	1995-02-16	Nichtflüchtiger Halbleiterspeicher.
DE3587457D1 (de)	1993-08-19	Halbleiterspeichereinrichtung.
DE3876666D1 (de)	1993-01-28	Halbleiter-festwertspeichereinrichtung.

Legal Events

Date	Code	Title	Description
1996-06-13	8364	No opposition during term of opposition
2002-09-26	8339	Ceased/non-payment of the annual fee