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DE60336567D1 - Piezoelektrischer d nnfilmoszillator, piezoelektrisches d nnfilmbauelement und herstellungsverfahren daf r - Google Patents

Piezoelektrischer d nnfilmoszillator, piezoelektrisches d nnfilmbauelement und herstellungsverfahren daf r

Info

Publication number
DE60336567D1
DE60336567D1 DE60336567T DE60336567T DE60336567D1 DE 60336567 D1 DE60336567 D1 DE 60336567D1 DE 60336567 T DE60336567 T DE 60336567T DE 60336567 T DE60336567 T DE 60336567T DE 60336567 D1 DE60336567 D1 DE 60336567D1
Authority
DE
Germany
Prior art keywords
piezoelectric
nanofilmoscillator
daf
manufacturing
filming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60336567T
Other languages
English (en)
Inventor
Tetsuo Yamada
Kosuke Nishimura
Keigo Nagao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Application granted granted Critical
Publication of DE60336567D1 publication Critical patent/DE60336567D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/562—Monolithic crystal filters comprising a ceramic piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02094—Means for compensation or elimination of undesirable effects of adherence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/566—Electric coupling means therefor
    • H03H9/568—Electric coupling means therefor consisting of a ladder configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/583—Multiple crystal filters implemented with thin-film techniques comprising a plurality of piezoelectric layers acoustically coupled
    • H03H9/585—Stacked Crystal Filters [SCF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/588—Membranes

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE60336567T 2002-06-20 2003-06-20 Piezoelektrischer d nnfilmoszillator, piezoelektrisches d nnfilmbauelement und herstellungsverfahren daf r Expired - Lifetime DE60336567D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002179910 2002-06-20
PCT/JP2003/007857 WO2004001964A1 (ja) 2002-06-20 2003-06-20 薄膜圧電共振器、薄膜圧電デバイスおよびその製造方法

Publications (1)

Publication Number Publication Date
DE60336567D1 true DE60336567D1 (de) 2011-05-12

Family

ID=29996581

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60336567T Expired - Lifetime DE60336567D1 (de) 2002-06-20 2003-06-20 Piezoelektrischer d nnfilmoszillator, piezoelektrisches d nnfilmbauelement und herstellungsverfahren daf r

Country Status (6)

Country Link
US (1) US7388318B2 (de)
EP (1) EP1542362B1 (de)
JP (1) JP3940932B2 (de)
AU (1) AU2003244319A1 (de)
DE (1) DE60336567D1 (de)
WO (1) WO2004001964A1 (de)

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7168318B2 (en) * 2002-08-12 2007-01-30 California Institute Of Technology Isolated planar mesogyroscope
US7275292B2 (en) * 2003-03-07 2007-10-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Method for fabricating an acoustical resonator on a substrate
US7391285B2 (en) 2003-10-30 2008-06-24 Avago Technologies Wireless Ip Pte Ltd Film acoustically-coupled transformer
DE602004000851T2 (de) 2003-10-30 2007-05-16 Avago Technologies General Ip (Singapore) Pte. Ltd. Akustisch gekoppelter Dünnschicht-Transformator mit zwei piezoelektrischen Elementen, welche entgegengesetzte C-Axen Orientierung besitzten
US6946928B2 (en) 2003-10-30 2005-09-20 Agilent Technologies, Inc. Thin-film acoustically-coupled transformer
US7242270B2 (en) 2003-10-30 2007-07-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Decoupled stacked bulk acoustic resonator-based band-pass filter
US7358831B2 (en) 2003-10-30 2008-04-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with simplified packaging
US7019605B2 (en) 2003-10-30 2006-03-28 Larson Iii John D Stacked bulk acoustic resonator band-pass filter with controllable pass bandwidth
JP4625260B2 (ja) * 2004-02-04 2011-02-02 株式会社日立メディアエレクトロニクス 薄膜バルク共振子の製造方法
KR100622955B1 (ko) * 2004-04-06 2006-09-18 삼성전자주식회사 박막 벌크 음향 공진기 및 그 제조방법
US7194891B2 (en) * 2004-04-20 2007-03-27 Massachusetts Institute Of Technology High-temperature gas sensors
US7161448B2 (en) * 2004-06-14 2007-01-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancements using recessed region
US7615833B2 (en) 2004-07-13 2009-11-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator package and method of fabricating same
US7388454B2 (en) 2004-10-01 2008-06-17 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using alternating frame structure
JP2006129195A (ja) * 2004-10-29 2006-05-18 Kyocera Kinseki Corp 圧電薄膜素子
US8981876B2 (en) 2004-11-15 2015-03-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters having frame elements
US7202560B2 (en) 2004-12-15 2007-04-10 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Wafer bonding of micro-electro mechanical systems to active circuitry
US7791434B2 (en) 2004-12-22 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric
KR100698287B1 (ko) 2005-01-31 2007-03-22 삼성전자주식회사 박막벌크음향공진기 및 그 제조 방법
US7427819B2 (en) 2005-03-04 2008-09-23 Avago Wireless Ip Pte Ltd Film-bulk acoustic wave resonator with motion plate and method
US20060214115A1 (en) 2005-03-23 2006-09-28 General Electric Company Phosphor film, imaging assembly and inspection method
US7369013B2 (en) 2005-04-06 2008-05-06 Avago Technologies Wireless Ip Pte Ltd Acoustic resonator performance enhancement using filled recessed region
US7436269B2 (en) 2005-04-18 2008-10-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustically coupled resonators and method of making the same
JP2007019758A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 薄膜圧電共振素子の製造方法及び薄膜圧電共振素子
US7443269B2 (en) 2005-07-27 2008-10-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and apparatus for selectively blocking radio frequency (RF) signals in a radio frequency (RF) switching circuit
JP4690817B2 (ja) * 2005-08-03 2011-06-01 パナソニック株式会社 薄膜バルク音響共振器の製造方法
US7868522B2 (en) 2005-09-09 2011-01-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Adjusted frequency temperature coefficient resonator
US7391286B2 (en) 2005-10-06 2008-06-24 Avago Wireless Ip Pte Ltd Impedance matching and parasitic capacitor resonance of FBAR resonators and coupled filters
US7675390B2 (en) 2005-10-18 2010-03-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single decoupled stacked bulk acoustic resonator
US7525398B2 (en) 2005-10-18 2009-04-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustically communicating data signals across an electrical isolation barrier
US7423503B2 (en) 2005-10-18 2008-09-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating film acoustically-coupled transformer
US7425787B2 (en) 2005-10-18 2008-09-16 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating single insulated decoupled stacked bulk acoustic resonator with acoustically-resonant electrical insulator
US7737807B2 (en) * 2005-10-18 2010-06-15 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic galvanic isolator incorporating series-connected decoupled stacked bulk acoustic resonators
US7463499B2 (en) 2005-10-31 2008-12-09 Avago Technologies General Ip (Singapore) Pte Ltd. AC-DC power converter
US7561009B2 (en) 2005-11-30 2009-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator (FBAR) devices with temperature compensation
JP2007165478A (ja) * 2005-12-12 2007-06-28 National Univ Corp Shizuoka Univ 光電面及び光検出器
US7612636B2 (en) 2006-01-30 2009-11-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Impedance transforming bulk acoustic wave baluns
JP2007221665A (ja) * 2006-02-20 2007-08-30 Toshiba Corp 薄膜圧電共振器及びその製造方法、並びに、これを用いたフィルタ
US20070210748A1 (en) * 2006-03-09 2007-09-13 Mark Unkrich Power supply and electronic device having integrated power supply
US7746677B2 (en) 2006-03-09 2010-06-29 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. AC-DC converter circuit and power supply
US7479685B2 (en) 2006-03-10 2009-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Electronic device on substrate with cavity and mitigated parasitic leakage path
JP4730162B2 (ja) * 2006-03-24 2011-07-20 株式会社日立製作所 超音波送受信デバイス，超音波探触子およびその製造方法
US7629865B2 (en) 2006-05-31 2009-12-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Piezoelectric resonator structures and electrical filters
JP4817464B2 (ja) * 2006-09-05 2011-11-16 パイオニア株式会社 熱音響発生装置
US7508286B2 (en) 2006-09-28 2009-03-24 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. HBAR oscillator and method of manufacture
US20090079514A1 (en) * 2007-09-24 2009-03-26 Tiberiu Jamneala Hybrid acoustic resonator-based filters
US7791435B2 (en) 2007-09-28 2010-09-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Single stack coupled resonators having differential output
KR100931575B1 (ko) * 2007-12-07 2009-12-14 한국전자통신연구원 Ｍｅｍｓ를 이용한 압전 소자 마이크로 스피커 및 그 제조방법
JP5147932B2 (ja) * 2008-03-04 2013-02-20 太陽誘電株式会社 圧電薄膜共振器、フィルタ、通信モジュール、および通信装置
US7732977B2 (en) 2008-04-30 2010-06-08 Avago Technologies Wireless Ip (Singapore) Transceiver circuit for film bulk acoustic resonator (FBAR) transducers
US7855618B2 (en) 2008-04-30 2010-12-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator electrical impedance transformers
US9085152B2 (en) * 2008-05-22 2015-07-21 Fujifilm Corporation Etching piezoelectric material
JP5229945B2 (ja) * 2008-09-09 2013-07-03 太陽誘電株式会社 フィルタ、デュープレクサ、および通信装置
JP5293557B2 (ja) 2008-12-17 2013-09-18 セイコーエプソン株式会社 超音波トランスデューサー、超音波トランスデューサーアレイ及び超音波デバイス
US8902023B2 (en) 2009-06-24 2014-12-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8248185B2 (en) 2009-06-24 2012-08-21 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator structure comprising a bridge
US8193877B2 (en) 2009-11-30 2012-06-05 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Duplexer with negative phase shifting circuit
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
FR2958029B1 (fr) * 2010-03-23 2012-04-20 Sagem Defense Securite Procede de mesure angulaire au moyen d'un capteur vibrant auquel sont appliquees des commandes modulees
JP5479227B2 (ja) * 2010-05-28 2014-04-23 株式会社東芝 半導体装置
US8962443B2 (en) 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9148117B2 (en) 2011-02-28 2015-09-29 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge and frame elements
US9154112B2 (en) 2011-02-28 2015-10-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Coupled resonator filter comprising a bridge
US9136818B2 (en) 2011-02-28 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked acoustic resonator comprising a bridge
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9083302B2 (en) 2011-02-28 2015-07-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9048812B2 (en) 2011-02-28 2015-06-02 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8575820B2 (en) 2011-03-29 2013-11-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Stacked bulk acoustic resonator
US8350445B1 (en) 2011-06-16 2013-01-08 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising non-piezoelectric layer and bridge
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
GB201121660D0 (en) * 2011-12-15 2012-01-25 Cambridge Entpr Ltd Measurement method using a sensor, sensor system and sensor
JP6216540B2 (ja) * 2012-05-30 2017-10-18 ローム株式会社 有機ｅｌ発光装置およびその製造方法、および積層カラーフィルタ
ITAN20120087A1 (it) 2012-07-11 2014-01-12 Viscount Internat S P A Pannello di controllo a sfioramento, retroilluminato.
US9352532B2 (en) * 2013-04-30 2016-05-31 Hewlett-Packard Development Company, L.P. Film stack including adhesive layer
US9437802B2 (en) * 2013-08-21 2016-09-06 Fujifilm Dimatix, Inc. Multi-layered thin film piezoelectric devices and methods of making the same
US9475093B2 (en) 2013-10-03 2016-10-25 Fujifilm Dimatix, Inc. Piezoelectric ultrasonic transducer array with switched operational modes
US9525119B2 (en) 2013-12-11 2016-12-20 Fujifilm Dimatix, Inc. Flexible micromachined transducer device and method for fabricating same
JP2015153850A (ja) * 2014-02-13 2015-08-24 株式会社サイオクス 圧電体薄膜素子、その製造方法、および該圧電体薄膜素子を用いた電子デバイス
US9537465B1 (en) * 2014-06-06 2017-01-03 Akoustis, Inc. Acoustic resonator device with single crystal piezo material and capacitor on a bulk substrate
WO2016154397A1 (en) * 2015-03-24 2016-09-29 Carnegie Mellon University Two-dimensional mode resonators
WO2017075413A1 (en) * 2015-10-28 2017-05-04 Georgia Tech Research Corporation Comb-driven substrate decoupled annulus pitch/roll baw gyroscope with slanted quadrature tuning electrode
JP6666994B2 (ja) * 2016-03-11 2020-03-18 株式会社村田製作所 圧電素子、及び圧電素子の製造方法
WO2018057071A1 (en) 2016-06-07 2018-03-29 Georgia Tech Research Corporation Pitch/roll annulus gyroscope with slanted quadrature tuning electrodes and related fabrication methods
US10439589B2 (en) 2016-06-24 2019-10-08 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same
US20180234075A1 (en) * 2017-02-14 2018-08-16 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
WO2018182681A1 (en) * 2017-03-31 2018-10-04 Intel Corporation Engineered porosity using pillar and air gap structures for resonator isolation from bulk
US10594298B2 (en) * 2017-06-19 2020-03-17 Rfhic Corporation Bulk acoustic wave filter
US10771031B2 (en) * 2018-02-05 2020-09-08 Zhuhai Crystal Resonance Technologies Co., Ltd. Method for fabricating single crystal piezoelectric RF resonators and filters with improved cavity definition
CN109889174B (zh) * 2019-02-20 2023-05-23 中国科学院微电子研究所 一种谐振器及其制作方法
WO2021220544A1 (ja) * 2020-04-30 2021-11-04 株式会社村田製作所 圧電振動子及びそれを備える圧電発振器
CN112886940B (zh) * 2021-01-13 2022-06-17 宁波华彰企业管理合伙企业(有限合伙) 一种易于集成的fbar滤波器
CN118041285B (zh) * 2024-03-06 2024-12-03 武汉敏声新技术有限公司 一种体声波谐振器及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153412A (ja) 1982-03-08 1983-09-12 Nec Corp 圧電薄膜複合振動子
JPS58156220A (ja) 1982-03-11 1983-09-17 Nec Corp 薄膜圧電フイルタ
JPS60142607A (ja) 1983-12-29 1985-07-27 Nec Corp 圧電薄膜複合振動子
KR920005610B1 (ko) * 1985-04-11 1992-07-09 도오요오 쓰으신끼 가부시끼가이샤 오버톤 발진용 압전 공진자
US5382930A (en) * 1992-12-21 1995-01-17 Trw Inc. Monolithic multipole filters made of thin film stacked crystal filters
US5956292A (en) * 1995-04-13 1999-09-21 The Charles Stark Draper Laboratory, Inc. Monolithic micromachined piezoelectric acoustic transducer and transducer array and method of making same
US6060818A (en) 1998-06-02 2000-05-09 Hewlett-Packard Company SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters
US6215375B1 (en) 1999-03-30 2001-04-10 Agilent Technologies, Inc. Bulk acoustic wave resonator with improved lateral mode suppression
JP2000307376A (ja) * 1999-04-16 2000-11-02 Takaya Watanabe 水晶振動子
KR100370638B1 (ko) * 1999-07-13 2003-02-05 삼성전기주식회사 무진동판 압전/전왜 마이크로 액츄에이터 및 그 제조방법
JP3514224B2 (ja) 1999-11-11 2004-03-31 株式会社村田製作所 圧電共振子、フィルタ及び電子機器
US6774541B1 (en) * 1999-11-18 2004-08-10 Kri, Inc. Piezoelectric element, process for producing the piezoelectric element, and head for ink-jet printer using the piezoelectric element
JP2001345656A (ja) 2000-06-02 2001-12-14 Seiko Epson Corp 水晶振動片の製造方法及び水晶デバイス
JP3470691B2 (ja) * 2000-08-31 2003-11-25 株式会社村田製作所 圧電共振子および圧電フィルタ
EP1170862B1 (de) * 2000-06-23 2012-10-10 Murata Manufacturing Co., Ltd. Piezoelektrischer Resonator und diesen enthaltendes piezoelektrisches Filter
JP2005236337A (ja) * 2001-05-11 2005-09-02 Ube Ind Ltd 薄膜音響共振器及びその製造方法
JP2002353760A (ja) * 2001-05-29 2002-12-06 Toko Inc 薄膜弾性波素子の製造方法
JP3954395B2 (ja) * 2001-10-26 2007-08-08 富士通株式会社 圧電薄膜共振子、フィルタ、および圧電薄膜共振子の製造方法
JP4055885B2 (ja) * 2001-10-29 2008-03-05 Ｔｄｋ株式会社 圧電薄膜振動素子、及びこれを用いたフィルタ

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JP3940932B2 (ja) 2007-07-04
JPWO2004001964A1 (ja) 2005-10-27
US20050248238A1 (en) 2005-11-10
EP1542362A4 (de) 2006-07-19
EP1542362B1 (de) 2011-03-30
US7388318B2 (en) 2008-06-17
WO2004001964A1 (ja) 2003-12-31
AU2003244319A1 (en) 2004-01-06

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