DE60317586D1 - Verfahren zur Herstellung von mehrschichtigen, halbleitenden Nanopartikeln und und die nach diesem Verfahren erhaltenen mehrschichtigen, halbleitenden Nanopartikel - Google Patents
Verfahren zur Herstellung von mehrschichtigen, halbleitenden Nanopartikeln und und die nach diesem Verfahren erhaltenen mehrschichtigen, halbleitenden NanopartikelInfo
- Publication number
- DE60317586D1 DE60317586D1 DE60317586T DE60317586T DE60317586D1 DE 60317586 D1 DE60317586 D1 DE 60317586D1 DE 60317586 T DE60317586 T DE 60317586T DE 60317586 T DE60317586 T DE 60317586T DE 60317586 D1 DE60317586 D1 DE 60317586D1
- Authority
- DE
- Germany
- Prior art keywords
- multilayer
- semiconducting nanoparticles
- preparation
- semiconducting
- nanoparticles obtained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
- C09C3/006—Combinations of treatments provided for in groups C09C3/04 - C09C3/12
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y5/00—Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
- C09C3/06—Treatment with inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
- C09C3/08—Treatment with low-molecular-weight non-polymer organic compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
- C01P2004/52—Particles with a specific particle size distribution highly monodisperse size distribution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/715—On an organic substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Health & Medical Sciences (AREA)
- Pharmacology & Pharmacy (AREA)
- Biophysics (AREA)
- Biotechnology (AREA)
- General Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Medical Informatics (AREA)
- Medicinal Chemistry (AREA)
- Molecular Biology (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Luminescent Compositions (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002028022 | 2002-02-05 | ||
JP2002028022A JP4113361B2 (ja) | 2002-02-05 | 2002-02-05 | 複層半導体ナノ粒子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60317586D1 true DE60317586D1 (de) | 2008-01-03 |
DE60317586T2 DE60317586T2 (de) | 2008-10-23 |
Family
ID=19192423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60317586T Expired - Lifetime DE60317586T2 (de) | 2002-02-05 | 2003-01-23 | Verfahren zur Herstellen eines mehrschichtigen Halbleiter-Nanopartikels und einmehrschichtiger Halbleiter-Nanopartikel, hergestellt durch das Verfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US6911082B2 (de) |
EP (1) | EP1333064B1 (de) |
JP (1) | JP4113361B2 (de) |
DE (1) | DE60317586T2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4005850B2 (ja) * | 2002-06-10 | 2007-11-14 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子製造方法 |
JP3847677B2 (ja) * | 2002-07-23 | 2006-11-22 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子、その製造方法、及び半導体ナノ粒子蛍光試薬 |
JP4230741B2 (ja) * | 2002-08-30 | 2009-02-25 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子の精製方法 |
US7193098B1 (en) * | 2003-03-20 | 2007-03-20 | The Research Foundation Of State University Of New York | Process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems in a non-coordinating solvent utilizing in situ surfactant generation |
JP5086517B2 (ja) * | 2004-02-02 | 2012-11-28 | 株式会社日立ソリューションズ | 半導体ナノ粒子製造方法 |
US7190264B2 (en) * | 2004-03-05 | 2007-03-13 | Simon Fraser University | Wireless computer monitoring device with automatic arming and disarming |
CN1232608C (zh) * | 2004-04-06 | 2005-12-21 | 中国科学院长春应用化学研究所 | 在液-液界面上纳米半导体发光材料的合成方法 |
KR100621309B1 (ko) * | 2004-04-20 | 2006-09-14 | 삼성전자주식회사 | 황 전구체로서 싸이올 화합물을 이용한 황화 금속나노결정의 제조방법 |
JP5136877B2 (ja) * | 2004-07-16 | 2013-02-06 | 独立行政法人産業技術総合研究所 | 蛍光体、及びその製造方法 |
US7340957B2 (en) | 2004-07-29 | 2008-03-11 | Los Alamos National Security, Llc | Ultrasonic analyte concentration and application in flow cytometry |
WO2006023612A2 (en) * | 2004-08-19 | 2006-03-02 | Zetetic Institute | Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers |
JP2006104411A (ja) | 2004-10-08 | 2006-04-20 | Sharp Corp | 蛍光体、その製造方法およびこれを用いた発光装置 |
CN1325577C (zh) * | 2004-12-03 | 2007-07-11 | 中国科学院长春应用化学研究所 | 合成有机包覆剂包覆的二氧化钛纳米粒子的方法 |
US7625835B2 (en) * | 2005-06-10 | 2009-12-01 | Gm Global Technology Operations, Inc. | Photocatalyst and use thereof |
US20070037365A1 (en) * | 2005-08-15 | 2007-02-15 | Ranganath Tirumala R | Semiconductor nanostructures and fabricating the same |
KR100745744B1 (ko) * | 2005-11-11 | 2007-08-02 | 삼성전기주식회사 | 나노 입자 코팅 방법 |
WO2008048302A2 (en) * | 2005-11-29 | 2008-04-24 | Nanodynamics Inc. | Bulk thermoelectric compositions from coated nanoparticles |
US7835000B2 (en) | 2006-11-03 | 2010-11-16 | Los Alamos National Security, Llc | System and method for measuring particles in a sample stream of a flow cytometer or the like |
EP2664916B1 (de) | 2007-04-02 | 2017-02-08 | Acoustic Cytometry Systems, Inc. | Verfahren zum Manipulieren einer Flüssigkeit in einer Durchflusszelle unter Anwendung von akustischer Fokussierung |
US7837040B2 (en) * | 2007-04-09 | 2010-11-23 | Los Alamos National Security, Llc | Acoustic concentration of particles in fluid flow |
US8083068B2 (en) | 2007-04-09 | 2011-12-27 | Los Alamos National Security, Llc | Apparatus for separating particles utilizing engineered acoustic contrast capture particles |
US8528406B2 (en) * | 2007-10-24 | 2013-09-10 | Los Alamos National Security, LLP | Method for non-contact particle manipulation and control of particle spacing along an axis |
US8263407B2 (en) | 2007-10-24 | 2012-09-11 | Los Alamos National Security, Llc | Method for non-contact particle manipulation and control of particle spacing along an axis |
US8266950B2 (en) | 2007-12-19 | 2012-09-18 | Los Alamos National Security, LLP | Particle analysis in an acoustic cytometer |
CN102264630B (zh) * | 2008-10-24 | 2016-10-19 | 生命科技公司 | 稳定的纳米粒子以及制造和使用这种粒子的方法 |
KR101942966B1 (ko) | 2011-08-18 | 2019-01-29 | 삼성전자주식회사 | 단분산 입자의 제조 방법, 이에 따라 제조된 단분산 입자 및 가변 광결정 소자 |
KR101968634B1 (ko) | 2011-08-24 | 2019-04-15 | 삼성전자주식회사 | 고굴절률 나노 입자의 제조 방법, 이에 따라 제조된 나노 입자 및 나노 입자를 이용한 광결정 소자 |
US9593053B1 (en) | 2011-11-14 | 2017-03-14 | Hypersolar, Inc. | Photoelectrosynthetically active heterostructures |
CN103013520B (zh) * | 2012-10-25 | 2014-06-18 | 深圳先进技术研究院 | 水溶性近红外量子点,其制备方法及应用 |
US10100415B2 (en) | 2014-03-21 | 2018-10-16 | Hypersolar, Inc. | Multi-junction artificial photosynthetic cell with enhanced photovoltages |
JP6606418B2 (ja) * | 2015-01-29 | 2019-11-13 | スタンレー電気株式会社 | 量子ドット集合体の製造方法 |
KR102342801B1 (ko) * | 2016-05-25 | 2021-12-22 | 고려대학교 세종산학협력단 | 글라임 용매를 기반으로 하는 CdSe 코어를 포함하는 코어-쉘 구조 제조방법 및 이로부터 제조된 CdSe 코어를 포함하는 코어-쉘 구조 |
DE102023104816A1 (de) * | 2023-02-28 | 2024-08-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Cadmium und/oder Zink Chalkogenid Nanopartikel als Katalysatormaterial für CO2 Reduktion |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5441712A (en) * | 1993-10-15 | 1995-08-15 | Bhp Minerals International Inc. | Hydrometallurgical process for producing zinc oxide |
JP3266426B2 (ja) * | 1994-10-11 | 2002-03-18 | 株式会社リコー | 複写機の原稿押え装置 |
US6120751A (en) * | 1997-03-21 | 2000-09-19 | Imarx Pharmaceutical Corp. | Charged lipids and uses for the same |
US6322901B1 (en) | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
JP4005850B2 (ja) | 2002-06-10 | 2007-11-14 | 日立ソフトウエアエンジニアリング株式会社 | 半導体ナノ粒子製造方法 |
-
2002
- 2002-02-05 JP JP2002028022A patent/JP4113361B2/ja not_active Expired - Fee Related
-
2003
- 2003-01-22 US US10/348,002 patent/US6911082B2/en not_active Expired - Fee Related
- 2003-01-23 DE DE60317586T patent/DE60317586T2/de not_active Expired - Lifetime
- 2003-01-23 EP EP03001539A patent/EP1333064B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1333064A3 (de) | 2005-03-09 |
EP1333064B1 (de) | 2007-11-21 |
US20030162393A1 (en) | 2003-08-28 |
JP2003226521A (ja) | 2003-08-12 |
JP4113361B2 (ja) | 2008-07-09 |
EP1333064A2 (de) | 2003-08-06 |
DE60317586T2 (de) | 2008-10-23 |
US6911082B2 (en) | 2005-06-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |