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DE60306782D1 - Vorrichtung und verfahren zum beschreiben eines kippspeichers - Google Patents

Vorrichtung und verfahren zum beschreiben eines kippspeichers

Info

Publication number
DE60306782D1
DE60306782D1 DE60306782T DE60306782T DE60306782D1 DE 60306782 D1 DE60306782 D1 DE 60306782D1 DE 60306782 T DE60306782 T DE 60306782T DE 60306782 T DE60306782 T DE 60306782T DE 60306782 D1 DE60306782 D1 DE 60306782D1
Authority
DE
Germany
Prior art keywords
cell
state
write
flipped
written
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60306782T
Other languages
English (en)
Other versions
DE60306782T2 (de
Inventor
J Nahas
W Andre
K Subramanian
J Garni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of DE60306782D1 publication Critical patent/DE60306782D1/de
Publication of DE60306782T2 publication Critical patent/DE60306782T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2263—Write conditionally, e.g. only if new data and old data differ

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Digital Magnetic Recording (AREA)
DE60306782T 2002-06-28 2003-04-29 Vorrichtung und verfahren zum beschreiben eines kippspeichers Expired - Lifetime DE60306782T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/186,141 US6693824B2 (en) 2002-06-28 2002-06-28 Circuit and method of writing a toggle memory
US186141 2002-06-28
PCT/US2003/013179 WO2004003922A1 (en) 2002-06-28 2003-04-29 Circuit and method of writing a toggle memory

Publications (2)

Publication Number Publication Date
DE60306782D1 true DE60306782D1 (de) 2006-08-24
DE60306782T2 DE60306782T2 (de) 2006-11-30

Family

ID=29779824

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60306782T Expired - Lifetime DE60306782T2 (de) 2002-06-28 2003-04-29 Vorrichtung und verfahren zum beschreiben eines kippspeichers

Country Status (10)

Country Link
US (1) US6693824B2 (de)
EP (1) EP1518246B1 (de)
JP (1) JP4359561B2 (de)
KR (1) KR100943112B1 (de)
CN (1) CN100470665C (de)
AT (1) ATE333138T1 (de)
AU (1) AU2003231170A1 (de)
DE (1) DE60306782T2 (de)
TW (1) TWI307887B (de)
WO (1) WO2004003922A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842365B1 (en) * 2003-09-05 2005-01-11 Freescale Semiconductor, Inc. Write driver for a magnetoresistive memory
US7286378B2 (en) * 2003-11-04 2007-10-23 Micron Technology, Inc. Serial transistor-cell array architecture
US7613868B2 (en) * 2004-06-09 2009-11-03 Headway Technologies, Inc. Method and system for optimizing the number of word line segments in a segmented MRAM array
JP2006031795A (ja) * 2004-07-14 2006-02-02 Renesas Technology Corp 不揮発性半導体記憶装置
JP2006065986A (ja) * 2004-08-27 2006-03-09 Fujitsu Ltd 磁気抵抗メモリおよび磁気抵抗メモリ書き込み方法
JP4012196B2 (ja) * 2004-12-22 2007-11-21 株式会社東芝 磁気ランダムアクセスメモリのデータ書き込み方法
US7543211B2 (en) * 2005-01-31 2009-06-02 Everspin Technologies, Inc. Toggle memory burst
JP4911027B2 (ja) * 2005-02-09 2012-04-04 日本電気株式会社 トグル型磁気ランダムアクセスメモリ及びトグル型磁気ランダムアクセスメモリの書き込み方法
US7630234B2 (en) * 2005-09-14 2009-12-08 Nec Corporation Magnetic random access memory
WO2007053517A2 (en) * 2005-10-28 2007-05-10 The University Of Alabama Enhanced toggle-mram memory device
US7577017B2 (en) * 2006-01-20 2009-08-18 Industrial Technology Research Institute High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
US7746686B2 (en) * 2006-04-21 2010-06-29 Honeywell International Inc. Partitioned random access and read only memory
US8111544B2 (en) * 2009-02-23 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Programming MRAM cells using probability write
US9613675B2 (en) 2013-12-14 2017-04-04 Qualcomm Incorporated System and method to perform low power memory operations
CN106574505B (zh) * 2014-08-29 2018-06-19 西门子公司 用于燃气涡轮发动机的受控会聚压缩机流动路径
CN204878059U (zh) 2014-12-17 2015-12-16 依必安-派特穆尔芬根股份有限两合公司 一种叶片及风机叶轮
KR101976045B1 (ko) * 2016-08-30 2019-05-09 에스케이하이닉스 주식회사 쓰기 동작시 상태 전환 인식이 가능한 자기 저항 메모리 장치 및 이에 있어서 읽기 및 쓰기 동작 방법
US11275356B2 (en) * 2018-11-22 2022-03-15 Mitsubishi Electric Corporation Input-output control unit, PLC and data control method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4763305A (en) 1985-11-27 1988-08-09 Motorola, Inc. Intelligent write in an EEPROM with data and erase check
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
US5953248A (en) 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
US5946227A (en) 1998-07-20 1999-08-31 Motorola, Inc. Magnetoresistive random access memory with shared word and digit lines
US6111781A (en) 1998-08-03 2000-08-29 Motorola, Inc. Magnetic random access memory array divided into a plurality of memory banks
DE19853447A1 (de) * 1998-11-19 2000-05-25 Siemens Ag Magnetischer Speicher
DE50000262D1 (de) * 1999-01-13 2002-08-08 Infineon Technologies Ag Schreib-/lesearchitektur für mram
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6191989B1 (en) 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
US6272041B1 (en) 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
US6335890B1 (en) 2000-11-01 2002-01-01 International Business Machines Corporation Segmented write line architecture for writing magnetic random access memories
US6418046B1 (en) * 2001-01-30 2002-07-09 Motorola, Inc. MRAM architecture and system
DE10107380C1 (de) * 2001-02-16 2002-07-25 Infineon Technologies Ag Verfahren zum Beschreiben magnetoresistiver Speicherzellen und mit diesem Verfahren beschreibbarer magnetoresistiver Speicher

Also Published As

Publication number Publication date
TWI307887B (en) 2009-03-21
CN1666292A (zh) 2005-09-07
KR100943112B1 (ko) 2010-02-18
US6693824B2 (en) 2004-02-17
EP1518246B1 (de) 2006-07-12
KR20050009762A (ko) 2005-01-25
AU2003231170A1 (en) 2004-01-19
JP2005531876A (ja) 2005-10-20
US20040001352A1 (en) 2004-01-01
JP4359561B2 (ja) 2009-11-04
DE60306782T2 (de) 2006-11-30
TW200409118A (en) 2004-06-01
ATE333138T1 (de) 2006-08-15
WO2004003922A1 (en) 2004-01-08
CN100470665C (zh) 2009-03-18
EP1518246A1 (de) 2005-03-30

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