DE60227302D1 - Photovoltaisches Element und photovoltaische Vorrichtung - Google Patents

Photovoltaisches Element und photovoltaische Vorrichtung

Info

Publication number: DE60227302D1
Authority: DE; Germany
Prior art keywords: photovoltaic; photovoltaic device; photovoltaic element
Prior art date: 2001-09-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE60227302T

Other languages

English (en)

Inventor

Eiji Maruyama

Toshiaki Baba

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sanyo Electric Co Ltd

Original Assignee

Sanyo Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-09-28

Filing date

2002-10-01

Publication date

2008-08-07

2002-10-01 Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd

2008-08-07 Application granted granted Critical

2008-08-07 Publication of DE60227302D1 publication Critical patent/DE60227302D1/de

2022-10-02 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
- H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers

DE60227302T 2001-09-28 2002-10-01 Photovoltaisches Element und photovoltaische Vorrichtung Expired - Lifetime DE60227302D1 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2001300462		2001-09-28
JP2002076978		2002-03-19
JP2002237965A JP4162447B2 (ja)	2001-09-28	2002-08-19	光起電力素子及び光起電力装置

Publications (1)

Publication Number	Publication Date
DE60227302D1 true DE60227302D1 (de)	2008-08-07

Family

ID=27347610

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE60219740T Expired - Lifetime DE60219740T2 (de)	2001-09-28	2002-10-01	Photovoltaische Vorrichtung
DE60227302T Expired - Lifetime DE60227302D1 (de)	2001-09-28	2002-10-01	Photovoltaisches Element und photovoltaische Vorrichtung

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE60219740T Expired - Lifetime DE60219740T2 (de)	2001-09-28	2002-10-01	Photovoltaische Vorrichtung

Country Status (6)

Country	Link
US (1)	US7214872B2 (de)
EP (2)	EP1300889B1 (de)
JP (1)	JP4162447B2 (de)
CN (1)	CN1230917C (de)
DE (2)	DE60219740T2 (de)
ES (2)	ES2284764T3 (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7638167B2 (en) *	2004-06-04	2009-12-29	Applied Microstructures, Inc.	Controlled deposition of silicon-containing coatings adhered by an oxide layer
US20050271893A1 (en) *	2004-06-04	2005-12-08	Applied Microstructures, Inc.	Controlled vapor deposition of multilayered coatings adhered by an oxide layer
US7199395B2 (en) *	2003-09-24	2007-04-03	Sanyo Electric Co., Ltd.	Photovoltaic cell and method of fabricating the same
EP1555695B1 (de) *	2004-01-13	2011-05-04	Sanyo Electric Co., Ltd.	Photovoltaisches Bauelement
WO2005121397A2 (en) *	2004-06-04	2005-12-22	Applied Microstructures, Inc.	Controlled vapor deposition of multilayered coatings adhered by an oxide layer
US7879396B2 (en) *	2004-06-04	2011-02-01	Applied Microstructures, Inc.	High aspect ratio performance coatings for biological microfluidics
US7695775B2 (en)	2004-06-04	2010-04-13	Applied Microstructures, Inc.	Controlled vapor deposition of biocompatible coatings over surface-treated substrates
JP4222992B2 (ja)	2004-09-29	2009-02-12	三洋電機株式会社	光起電力装置
JP4443516B2 (ja) *	2006-01-20	2010-03-31	三洋電機株式会社	光起電力素子およびその光起電力素子を備えた光起電力モジュール
JP4401360B2 (ja) *	2006-03-17	2010-01-20	三洋電機株式会社	光起電力素子およびその光起電力素子を備えた光起電力モジュール
DE102006042617B4 (de)	2006-09-05	2010-04-08	Q-Cells Se	Verfahren zur Erzeugung von lokalen Kontakten
US8076571B2 (en)	2006-11-02	2011-12-13	Guardian Industries Corp.	Front electrode for use in photovoltaic device and method of making same
US7964788B2 (en)	2006-11-02	2011-06-21	Guardian Industries Corp.	Front electrode for use in photovoltaic device and method of making same
US8012317B2 (en)	2006-11-02	2011-09-06	Guardian Industries Corp.	Front electrode including transparent conductive coating on patterned glass substrate for use in photovoltaic device and method of making same
US20080105299A1 (en) *	2006-11-02	2008-05-08	Guardian Industries Corp.	Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same
US8203073B2 (en)	2006-11-02	2012-06-19	Guardian Industries Corp.	Front electrode for use in photovoltaic device and method of making same
US8334452B2 (en)	2007-01-08	2012-12-18	Guardian Industries Corp.	Zinc oxide based front electrode doped with yttrium for use in photovoltaic device or the like
TWI405340B (zh) *	2007-08-31	2013-08-11	Nexpower Technology Corp	薄膜太陽能電池與其製作方法
KR101397159B1 (ko) *	2007-09-28	2014-05-20	주성엔지니어링(주)	박막형 태양전지 및 그 제조방법
US20100252109A1 (en) *	2007-09-19	2010-10-07	Jusung Engineering Co., Ltd.	Thin film type solar cell and method for manufacturing the same
TWI452703B (zh) *	2007-11-16	2014-09-11	Semiconductor Energy Lab	光電轉換裝置及其製造方法
US7888594B2 (en)	2007-11-20	2011-02-15	Guardian Industries Corp.	Photovoltaic device including front electrode having titanium oxide inclusive layer with high refractive index
US8076175B2 (en) *	2008-02-25	2011-12-13	Suniva, Inc.	Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US20090211623A1 (en) *	2008-02-25	2009-08-27	Suniva, Inc.	Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
TWI440198B (zh) *	2008-03-13	2014-06-01	Nexpower Technology Corp	薄膜疊層太陽能電池與其製作方法
US8664524B2 (en)	2008-07-17	2014-03-04	Uriel Solar, Inc.	High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
DE102008002954A1 (de) *	2008-07-18	2010-01-21	Schott Solar Gmbh	Löt-Stützstelle für Solarmodule und Dünnschichtsolarmodule
US9082857B2 (en) *	2008-09-01	2015-07-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device comprising an oxide semiconductor layer
US8022291B2 (en)	2008-10-15	2011-09-20	Guardian Industries Corp.	Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
US8742531B2 (en) *	2008-12-08	2014-06-03	Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University	Electrical devices including dendritic metal electrodes
US20120037225A1 (en) *	2009-06-16	2012-02-16	Lg Innotek Co., Ltd.	Solar cell and method of fabricating the same
KR101324175B1 (ko) *	2009-11-13	2013-11-06	듀폰-미츠이 폴리케미칼 가부시키가이샤	아몰퍼스 실리콘 태양전지 모듈
IN2012DN03272A (de) *	2009-12-10	2015-10-23	Uriel Solar Inc
WO2012020682A1 (ja) *	2010-08-09	2012-02-16	株式会社カネカ	結晶シリコン系太陽電池
JP5699352B2 (ja) *	2010-11-11	2015-04-08	北川工業株式会社	透明導電フィルム
JP2012136759A (ja) *	2010-12-27	2012-07-19	Sharp Corp	Ｉｔｏ膜およびその製造方法、半導体発光素子およびその製造方法
WO2012124463A1 (ja) *	2011-03-17	2012-09-20	三洋電機株式会社	太陽電池及び太陽電池モジュール
CN102185001B (zh) *	2011-04-18	2013-04-17	西安交通大学	硅基纳米氧化锌粉体薄膜异质结太阳能的结构及其制备
TW201322465A (zh) *	2011-11-29	2013-06-01	Ind Tech Res Inst	全背電極異質接面太陽能電池
DE102012100184B4 (de) *	2012-01-11	2015-03-12	Hanwha Q.CELLS GmbH	Verfahren zur Herstellung einer Halbleiterwafer-Solarzelle und eines Solarmoduls
KR101890324B1 (ko) *	2012-06-22	2018-09-28	엘지전자 주식회사	태양 전지 모듈 및 이에 적용되는 리본 결합체
CN102779907B (zh) *	2012-08-14	2015-08-19	常州天合光能有限公司	高效异质结电池的制备方法
AU2014279389B2 (en) *	2013-06-12	2018-06-14	Shin-Etsu Chemical Co., Ltd.	Coating liquid for suppressing deterioration of solar cell, thin film of same, and method for suppressing deterioration of solar cell
JP2015072936A (ja) *	2013-10-01	2015-04-16	長州産業株式会社	光発電素子
JP2015072939A (ja) *	2013-10-01	2015-04-16	長州産業株式会社	光発電素子
CN103606583A (zh) *	2013-12-05	2014-02-26	欧贝黎新能源科技股份有限公司	具有一维光子晶体的上转换非晶硅太阳电池及其制造工艺
CN106189166B (zh) *	2016-07-20	2018-03-27	王玲	一种led灯及其制备方法
CN110212040A (zh) *	2019-06-05	2019-09-06	中国科学院长春光学精密机械与物理研究所	一种日盲紫外探测器及其制备方法
CN114361267B (zh) *	2021-12-13	2024-08-09	中国科学院上海微系统与信息技术研究所	一种shj太阳电池双层tco薄膜结构及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4663188A (en)	1982-09-27	1987-05-05	Rca Corporation	Method for making a photodetector with enhanced light absorption
US4732621A (en) *	1985-06-17	1988-03-22	Sanyo Electric Co., Ltd.	Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer
JPH0448516A (ja)	1990-06-14	1992-02-18	Fujitsu Ltd	透明電極の形成方法
JP2938634B2 (ja) *	1991-10-08	1999-08-23	キヤノン株式会社	太陽電池モジュール
JPH06140650A (ja)	1992-09-14	1994-05-20	Sanyo Electric Co Ltd	透光性導電酸化膜の改質方法とこれを用いた光起電力装置の製造方法
JP3754815B2 (ja)	1997-02-19	2006-03-15	キヤノン株式会社	光起電力素子、光電変換素子、光起電力素子の製造方法及び光電変換素子の製造方法
ATE240589T1 (de) *	1999-03-25	2003-05-15	Kaneka Corp	Verfahren zum herstellen von dünnschicht- solarzellen-modulen

2002
- 2002-08-19 JP JP2002237965A patent/JP4162447B2/ja not_active Expired - Lifetime
- 2002-09-17 US US10/245,087 patent/US7214872B2/en not_active Expired - Lifetime
- 2002-09-25 CN CNB021433070A patent/CN1230917C/zh not_active Expired - Lifetime
- 2002-10-01 DE DE60219740T patent/DE60219740T2/de not_active Expired - Lifetime
- 2002-10-01 ES ES02022015T patent/ES2284764T3/es not_active Expired - Lifetime
- 2002-10-01 EP EP02022015A patent/EP1300889B1/de not_active Expired - Lifetime
- 2002-10-01 ES ES07004319T patent/ES2306443T3/es not_active Expired - Lifetime
- 2002-10-01 DE DE60227302T patent/DE60227302D1/de not_active Expired - Lifetime
- 2002-10-01 EP EP07004319A patent/EP1786040B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
US7214872B2 (en)	2007-05-08
EP1300889A2 (de)	2003-04-09
EP1786040A1 (de)	2007-05-16
US20030062081A1 (en)	2003-04-03
EP1300889B1 (de)	2007-04-25
ES2284764T3 (es)	2007-11-16
EP1300889A3 (de)	2003-05-14
CN1230917C (zh)	2005-12-07
JP2003347571A (ja)	2003-12-05
DE60219740D1 (de)	2007-06-06
CN1411078A (zh)	2003-04-16
JP4162447B2 (ja)	2008-10-08
DE60219740T2 (de)	2007-12-27
ES2306443T3 (es)	2008-11-01
EP1786040B1 (de)	2008-06-25

Publication	Publication Date	Title
DE60227302D1 (de)	2008-08-07	Photovoltaisches Element und photovoltaische Vorrichtung
DE60318512D1 (de)	2008-02-21	Fotoelektrisches Konversionselement und fotoelektrische Vorrichtung
DE60335738D1 (de)	2011-02-24	Mehrfach-ausrichteverfahren und vorrichtung
DE60237342D1 (de)	2010-09-30	Elektrooptische Vorrichtung und elektronisches Gerät
DE60233840D1 (de)	2009-11-12	Elektrooptische Vorrichtung und zugehöriges Herstellungsverfahren
DE60119418D1 (de)	2006-06-14	Gesichtsbildaufnehmendes Erkennungsgerät und Passprüfungsgerät
DE60217704D1 (de)	2007-03-08	Verbesserte endoprothetische vorrichtung
DE60226620D1 (de)	2008-06-26	Anschlagpuffervorrichtung
DE60207321D1 (de)	2005-12-22	Verschlussvorrichtung und -methode
DE10196595T1 (de)	2003-07-17	Vorrichtung und Halbleiter-Prüfvorrichtung
DE60308425D1 (de)	2006-11-02	Rotationsverzögernde Vorrichtung und Benutzung derselben
DE60131511D1 (de)	2008-01-03	Halbleiterverarbeitungsmodul und Vorrichtung
DE50204416D1 (de)	2006-02-09	Echosignalüberwachungsvorrichtung und -verfahren
DE60204286D1 (de)	2005-06-30	Implantierbare vorrichtung
DE50209528D1 (de)	2007-04-05	Einzugs- und Pflückeinrichtung
DE60331729D1 (de)	2010-04-29	Audiocodierungsverfahren und audiocodierungseinrichtung
DE50206103D1 (de)	2006-05-11	Beschicker und Montagevorrichtung
DE60206248D1 (de)	2006-02-02	Cogenerations-vorrichtung
DE60234299D1 (de)	2009-12-24	FFS-Verfahren und Vorrichtung
DE60111433D1 (de)	2005-07-21	Lötverfahren und Lötvorrichtung
DE60220486D1 (de)	2007-07-19	Zurückschaltungseinrichtung und Zurückschaltungsverfahren
DE60229938D1 (de)	2009-01-02	ENTWICKLUNGSEINRICHTUNG UND BILDformungsgerät
DE60238229D1 (de)	2010-12-23	Sendevorrichtung und sendeverfahren
DE60226661D1 (de)	2008-07-03	Induktives Element und Halbleiterbauelement
DE60222717D1 (de)	2007-11-15	Zündpille-Anschlusseinrichtung

Legal Events

Date	Code	Title	Description
2009-07-16	8364	No opposition during term of opposition