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DE60140845D1 - Bildaufnahmegerät - Google Patents

Bildaufnahmegerät

Info

Publication number
DE60140845D1
DE60140845D1 DE60140845T DE60140845T DE60140845D1 DE 60140845 D1 DE60140845 D1 DE 60140845D1 DE 60140845 T DE60140845 T DE 60140845T DE 60140845 T DE60140845 T DE 60140845T DE 60140845 D1 DE60140845 D1 DE 60140845D1
Authority
DE
Germany
Prior art keywords
imaging device
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140845T
Other languages
English (en)
Inventor
Tetsuya Itano
Hidekazu Takahashi
Tomoyuki Noda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000316646A external-priority patent/JP3495979B2/ja
Priority claimed from JP2000337900A external-priority patent/JP2002141488A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60140845D1 publication Critical patent/DE60140845D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B3/00—Focusing arrangements of general interest for cameras, projectors or printers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/41—Extracting pixel data from a plurality of image sensors simultaneously picking up an image, e.g. for increasing the field of view by combining the outputs of a plurality of sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60140845T 2000-10-17 2001-10-16 Bildaufnahmegerät Expired - Lifetime DE60140845D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000316646A JP3495979B2 (ja) 2000-10-17 2000-10-17 固体撮像素子及び撮像装置
JP2000337900A JP2002141488A (ja) 2000-11-06 2000-11-06 固体撮像装置及び固体撮像システム

Publications (1)

Publication Number Publication Date
DE60140845D1 true DE60140845D1 (de) 2010-02-04

Family

ID=26602236

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140845T Expired - Lifetime DE60140845D1 (de) 2000-10-17 2001-10-16 Bildaufnahmegerät

Country Status (5)

Country Link
US (1) US7139028B2 (de)
EP (2) EP1365581B1 (de)
KR (2) KR100488371B1 (de)
CN (2) CN100362665C (de)
DE (1) DE60140845D1 (de)

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JP2003143459A (ja) * 2001-11-02 2003-05-16 Canon Inc 複眼撮像系およびこれを備えた装置
JP2003304544A (ja) * 2002-04-10 2003-10-24 Canon Inc 撮像装置
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US7742088B2 (en) * 2002-11-19 2010-06-22 Fujifilm Corporation Image sensor and digital camera
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KR100539082B1 (ko) 2003-10-01 2006-01-10 주식회사 네패스 반도체 촬상소자의 패키지 구조 및 그 제조방법
JP4660086B2 (ja) * 2003-12-01 2011-03-30 三洋電機株式会社 固体撮像素子
JP4794821B2 (ja) * 2004-02-19 2011-10-19 キヤノン株式会社 固体撮像装置および撮像システム
KR100674911B1 (ko) * 2004-08-06 2007-01-26 삼성전자주식회사 이미지 센서 카메라 모듈 및 그 제조방법
US7795577B2 (en) * 2004-08-25 2010-09-14 Richard Ian Olsen Lens frame and optical focus assembly for imager module
US7916180B2 (en) * 2004-08-25 2011-03-29 Protarius Filo Ag, L.L.C. Simultaneous multiple field of view digital cameras
US7564019B2 (en) 2005-08-25 2009-07-21 Richard Ian Olsen Large dynamic range cameras
US8124929B2 (en) * 2004-08-25 2012-02-28 Protarius Filo Ag, L.L.C. Imager module optical focus and assembly method
CN101427372B (zh) 2004-08-25 2012-12-12 普罗塔里斯菲洛有限责任公司 用于多个相机装置的设备和操作该设备的方法
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US7935994B2 (en) 2005-02-24 2011-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Light shield for CMOS imager
JP5247007B2 (ja) 2005-06-09 2013-07-24 キヤノン株式会社 撮像装置及び撮像システム
US20070102622A1 (en) 2005-07-01 2007-05-10 Olsen Richard I Apparatus for multiple camera devices and method of operating same
JP2007012995A (ja) * 2005-07-01 2007-01-18 Toshiba Corp 超小型カメラモジュール及びその製造方法
US20070258006A1 (en) * 2005-08-25 2007-11-08 Olsen Richard I Solid state camera optics frame and assembly
US7964835B2 (en) 2005-08-25 2011-06-21 Protarius Filo Ag, L.L.C. Digital cameras with direct luminance and chrominance detection
US20070048343A1 (en) * 2005-08-26 2007-03-01 Honeywell International Inc. Biocidal premixtures
US7456044B2 (en) * 2005-12-28 2008-11-25 Dongbu Electronics Co., Ltd. Method for manufacturing image sensor
KR100795922B1 (ko) * 2006-07-28 2008-01-21 삼성전자주식회사 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법
US7978243B2 (en) * 2007-02-28 2011-07-12 Canon Kabushiki Kaisha Imaging apparatus, driving method thereof, and imaging system
US7999340B2 (en) * 2007-03-07 2011-08-16 Altasens, Inc. Apparatus and method for forming optical black pixels with uniformly low dark current
JP4346655B2 (ja) 2007-05-15 2009-10-21 株式会社東芝 半導体装置
JP4480740B2 (ja) * 2007-07-03 2010-06-16 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
JP2009252983A (ja) * 2008-04-04 2009-10-29 Canon Inc 撮像センサー、及び撮像センサーの製造方法
JP4582205B2 (ja) * 2008-06-12 2010-11-17 トヨタ自動車株式会社 電動車両
ATE515798T1 (de) 2008-08-19 2011-07-15 St Microelectronics Rousset Speicherung eines bildes in einem integrierten schaltkreis
US8130289B2 (en) * 2008-09-25 2012-03-06 Aptima Imaging Corporation System, method, and apparatus for correction of dark current error in semiconductor imaging devices
FR2941327B1 (fr) * 2009-01-22 2012-05-04 St Microelectronics Sa Dispositif de saisie d'images comprenant des moyens de rassemblement de pixels.
US8300108B2 (en) 2009-02-02 2012-10-30 L-3 Communications Cincinnati Electronics Corporation Multi-channel imaging devices comprising unit cells
JP2010282992A (ja) * 2009-06-02 2010-12-16 Sony Corp 固体撮像装置、および、その製造方法、電子機器
JP2012059865A (ja) * 2010-09-08 2012-03-22 Sony Corp 撮像素子および撮像装置

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Also Published As

Publication number Publication date
CN1349120A (zh) 2002-05-15
KR100488371B1 (ko) 2005-05-11
EP1365581A1 (de) 2003-11-26
EP1198126B1 (de) 2009-12-23
EP1198126A2 (de) 2002-04-17
EP1198126A3 (de) 2003-06-04
US7139028B2 (en) 2006-11-21
CN1522057A (zh) 2004-08-18
KR100506440B1 (ko) 2005-08-05
US20020051071A1 (en) 2002-05-02
KR20030082508A (ko) 2003-10-22
EP1365581B1 (de) 2013-01-09
CN1159904C (zh) 2004-07-28
CN100362665C (zh) 2008-01-16
KR20020030724A (ko) 2002-04-25

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Legal Events

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