DE60128025D1 - Halbleiterbauelement mit SOI-Struktur - Google Patents
Halbleiterbauelement mit SOI-StrukturInfo
- Publication number
- DE60128025D1 DE60128025D1 DE60128025T DE60128025T DE60128025D1 DE 60128025 D1 DE60128025 D1 DE 60128025D1 DE 60128025 T DE60128025 T DE 60128025T DE 60128025 T DE60128025 T DE 60128025T DE 60128025 D1 DE60128025 D1 DE 60128025D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- soi structure
- soi
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000102359 | 2000-04-04 | ||
| JP2000102359A JP3504212B2 (ja) | 2000-04-04 | 2000-04-04 | Ｓｏｉ構造の半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60128025D1 true DE60128025D1 (de) | 2007-06-06 |
| DE60128025T2 DE60128025T2 (de) | 2008-01-03 |
Family
ID=18616258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60128025T Expired - Fee Related DE60128025T2 (de) | 2000-04-04 | 2001-03-29 | Halbleiterbauelement mit SOI-Struktur |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6693326B2 (de) |
| EP (1) | EP1143527B1 (de) |
| JP (1) | JP3504212B2 (de) |
| KR (1) | KR100418643B1 (de) |
| CN (1) | CN1190854C (de) |
| DE (1) | DE60128025T2 (de) |
| TW (1) | TW506133B (de) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157129A1 (en) * | 1995-06-23 | 2003-08-21 | Smithkline Beecham Biologicals S.A. | Vaccine comprising a polysaccharide antigen - carrier protein conjugate and free carrier protein |
| US6621725B2 (en) * | 2000-08-17 | 2003-09-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device with floating storage bulk region and method of manufacturing the same |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| JP4457209B2 (ja) * | 2002-04-10 | 2010-04-28 | セイコーインスツル株式会社 | 絶縁ゲート薄膜トランジスタとその制御方法 |
| WO2004107383A1 (ja) * | 2003-01-09 | 2004-12-09 | Matsushita Electric Industrial Co., Ltd. | Misfet |
| EP1616864B1 (de) | 2003-04-18 | 2013-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Chinoxalinderivate und unter verwendung der derivate hergestellte vorrichtungen mit organischen halbleitern, elektrolumineszente vorrichtungen und elektronische geräte |
| US6940705B2 (en) * | 2003-07-25 | 2005-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor with enhanced performance and method of manufacture |
| US6936881B2 (en) | 2003-07-25 | 2005-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor that includes high permittivity capacitor dielectric |
| US7078742B2 (en) | 2003-07-25 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel semiconductor structure and method of fabricating the same |
| US7101742B2 (en) | 2003-08-12 | 2006-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel complementary field-effect transistors and methods of manufacture |
| US7112495B2 (en) | 2003-08-15 | 2006-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
| US20050035410A1 (en) * | 2003-08-15 | 2005-02-17 | Yee-Chia Yeo | Semiconductor diode with reduced leakage |
| US7071052B2 (en) * | 2003-08-18 | 2006-07-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistor with reduced leakage |
| US20050072975A1 (en) * | 2003-10-02 | 2005-04-07 | Shiao-Shien Chen | Partially depleted soi mosfet device |
| CN100416839C (zh) * | 2003-10-13 | 2008-09-03 | 联华电子股份有限公司 | 局部耗尽soi金属氧化物半导体元件 |
| US7888201B2 (en) | 2003-11-04 | 2011-02-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors |
| US20050186647A1 (en) * | 2003-11-12 | 2005-08-25 | Ping Gao | Methods for identifying or monitoring a patient with increased risk of cardiovascular calcification |
| US7382023B2 (en) * | 2004-04-28 | 2008-06-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fully depleted SOI multiple threshold voltage application |
| WO2006002347A1 (en) | 2004-06-23 | 2006-01-05 | Peregrine Semiconductor Corporation | Integrated rf front end |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US8742502B2 (en) | 2005-07-11 | 2014-06-03 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US7446001B2 (en) * | 2006-02-08 | 2008-11-04 | Freescale Semiconductors, Inc. | Method for forming a semiconductor-on-insulator (SOI) body-contacted device with a portion of drain region removed |
| US8558278B2 (en) | 2007-01-16 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained transistor with optimized drive current and method of forming |
| EP2568608B1 (de) | 2008-02-28 | 2014-05-14 | Peregrine Semiconductor Corporation | Verfahren und Vorrichtung zur Verwendung beim digitalen Abstimmen eines Kondensators in einer integrierten Schaltungsvorrichtung |
| US7943961B2 (en) | 2008-03-13 | 2011-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strain bars in stressed layers of MOS devices |
| JP2009277963A (ja) * | 2008-05-16 | 2009-11-26 | Toshiba Corp | 半導体装置 |
| US7808051B2 (en) | 2008-09-29 | 2010-10-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Standard cell without OD space effect in Y-direction |
| KR101606930B1 (ko) * | 2008-12-30 | 2016-03-28 | 주식회사 동부하이텍 | 반도체소자 및 그 제조방법 |
| US8723260B1 (en) | 2009-03-12 | 2014-05-13 | Rf Micro Devices, Inc. | Semiconductor radio frequency switch with body contact |
| TWI484573B (zh) * | 2009-06-05 | 2015-05-11 | United Microelectronics Corp | 半導體元件特徵化方法及半導體元件 |
| US9287253B2 (en) * | 2011-11-04 | 2016-03-15 | Synopsys, Inc. | Method and apparatus for floating or applying voltage to a well of an integrated circuit |
| US8829967B2 (en) | 2012-06-27 | 2014-09-09 | Triquint Semiconductor, Inc. | Body-contacted partially depleted silicon on insulator transistor |
| US8729952B2 (en) | 2012-08-16 | 2014-05-20 | Triquint Semiconductor, Inc. | Switching device with non-negative biasing |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US8847672B2 (en) | 2013-01-15 | 2014-09-30 | Triquint Semiconductor, Inc. | Switching device with resistive divider |
| US9214932B2 (en) | 2013-02-11 | 2015-12-15 | Triquint Semiconductor, Inc. | Body-biased switching device |
| US8977217B1 (en) | 2013-02-20 | 2015-03-10 | Triquint Semiconductor, Inc. | Switching device with negative bias circuit |
| US8923782B1 (en) | 2013-02-20 | 2014-12-30 | Triquint Semiconductor, Inc. | Switching device with diode-biased field-effect transistor (FET) |
| US9203396B1 (en) | 2013-02-22 | 2015-12-01 | Triquint Semiconductor, Inc. | Radio frequency switch device with source-follower |
| US20150236748A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Devices and Methods for Duplexer Loss Reduction |
| US9406695B2 (en) | 2013-11-20 | 2016-08-02 | Peregrine Semiconductor Corporation | Circuit and method for improving ESD tolerance and switching speed |
| KR102087438B1 (ko) * | 2013-12-17 | 2020-04-16 | 에스케이하이닉스 주식회사 | 작은 옵셋을 갖는 모스 트랜지스터 및 그 제조방법과, 이를 이용한 전자소자 |
| US9379698B2 (en) | 2014-02-04 | 2016-06-28 | Triquint Semiconductor, Inc. | Field effect transistor switching circuit |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US9646886B1 (en) * | 2015-12-30 | 2017-05-09 | International Business Machines Corporation | Tailored silicon layers for transistor multi-gate control |
| US9948281B2 (en) | 2016-09-02 | 2018-04-17 | Peregrine Semiconductor Corporation | Positive logic digitally tunable capacitor |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10665667B2 (en) * | 2018-08-14 | 2020-05-26 | Globalfoundries Inc. | Junctionless/accumulation mode transistor with dynamic control |
| CN111613534B (zh) * | 2019-02-26 | 2024-03-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| CN110210123B (zh) * | 2019-05-31 | 2023-07-21 | 苏州大学 | SOI器件的kink电流计算方法及装置 |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5799777A (en) | 1980-12-12 | 1982-06-21 | Toshiba Corp | Metal oxide semiconductor type semiconductor device |
| JPS60263466A (ja) * | 1984-06-12 | 1985-12-26 | Agency Of Ind Science & Technol | Ｍｏｓ型半導体装置とその製造方法 |
| JPS6143475A (ja) | 1984-08-08 | 1986-03-03 | Agency Of Ind Science & Technol | Ｍｏｓ型半導体装置 |
| JPS6213376A (ja) | 1985-07-11 | 1987-01-22 | Nec Corp | インクリボンカセツト |
| JPH0760901B2 (ja) | 1989-06-27 | 1995-06-28 | 三菱電機株式会社 | 半導体装置 |
| JPH04280474A (ja) * | 1991-03-08 | 1992-10-06 | Oki Electric Ind Co Ltd | Ｍｏｓ型トランジスタ |
| USH1435H (en) * | 1991-10-21 | 1995-05-02 | Cherne Richard D | SOI CMOS device having body extension for providing sidewall channel stop and bodytie |
| US5420055A (en) * | 1992-01-22 | 1995-05-30 | Kopin Corporation | Reduction of parasitic effects in floating body MOSFETs |
| JPH05218425A (ja) | 1992-01-31 | 1993-08-27 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果型半導体装置およびその製造方法 |
| EP0622834A3 (de) * | 1993-04-30 | 1998-02-11 | International Business Machines Corporation | Verfahren zur Latch-up Vermeidung und Durchbruchspannung Verbesserung in SOI MOSFET |
| JPH088431A (ja) | 1994-06-16 | 1996-01-12 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP3472401B2 (ja) * | 1996-01-17 | 2003-12-02 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP3484462B2 (ja) * | 1996-04-11 | 2004-01-06 | 株式会社ルネサステクノロジ | フローティングｓｏｉ−ｍｏｓｆｅｔの寿命を予測する方法 |
| US5920093A (en) * | 1997-04-07 | 1999-07-06 | Motorola, Inc. | SOI FET having gate sub-regions conforming to t-shape |
| KR19990010661A (ko) * | 1997-07-18 | 1999-02-18 | 윤종용 | 반도체 메모리 장치 |
| JP3337953B2 (ja) * | 1997-09-05 | 2002-10-28 | シャープ株式会社 | Ｓｏｉ・ｍｏｓｆｅｔ及びその製造方法 |
| JP3447927B2 (ja) * | 1997-09-19 | 2003-09-16 | 株式会社東芝 | 半導体装置およびその製造方法 |
| US6249027B1 (en) * | 1998-06-08 | 2001-06-19 | Sun Microsystems, Inc. | Partially depleted SOI device having a dedicated single body bias means |
| GB2340999A (en) * | 1998-08-28 | 2000-03-01 | Ericsson Telefon Ab L M | Isolating MOS transistors from substrates |
| US6268630B1 (en) * | 1999-03-16 | 2001-07-31 | Sandia Corporation | Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications |
-
2000
- 2000-04-04 JP JP2000102359A patent/JP3504212B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-29 DE DE60128025T patent/DE60128025T2/de not_active Expired - Fee Related
- 2001-03-29 EP EP01302968A patent/EP1143527B1/de not_active Expired - Lifetime
- 2001-04-02 US US09/822,251 patent/US6693326B2/en not_active Expired - Fee Related
- 2001-04-04 TW TW090108139A patent/TW506133B/zh active
- 2001-04-04 KR KR10-2001-0017877A patent/KR100418643B1/ko not_active Expired - Fee Related
- 2001-04-04 CN CNB011178884A patent/CN1190854C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1190854C (zh) | 2005-02-23 |
| CN1316781A (zh) | 2001-10-10 |
| DE60128025T2 (de) | 2008-01-03 |
| JP2001284591A (ja) | 2001-10-12 |
| KR20010095306A (ko) | 2001-11-03 |
| JP3504212B2 (ja) | 2004-03-08 |
| US20010028089A1 (en) | 2001-10-11 |
| US6693326B2 (en) | 2004-02-17 |
| KR100418643B1 (ko) | 2004-02-11 |
| TW506133B (en) | 2002-10-11 |
| EP1143527B1 (de) | 2007-04-25 |
| EP1143527A1 (de) | 2001-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |