DE60033866D1 - Vorrichtung und Verfahren zur Planarisierung - Google Patents
Vorrichtung und Verfahren zur PlanarisierungInfo
- Publication number
- DE60033866D1 DE60033866D1 DE60033866T DE60033866T DE60033866D1 DE 60033866 D1 DE60033866 D1 DE 60033866D1 DE 60033866 T DE60033866 T DE 60033866T DE 60033866 T DE60033866 T DE 60033866T DE 60033866 D1 DE60033866 D1 DE 60033866D1
- Authority
- DE
- Germany
- Prior art keywords
- planarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP131799 | 1999-01-06 | ||
JP131799 | 1999-01-06 | ||
JP32143299 | 1999-11-11 | ||
JP32143299A JP2000254857A (ja) | 1999-01-06 | 1999-11-11 | 平面加工装置及び平面加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60033866D1 true DE60033866D1 (de) | 2007-04-19 |
DE60033866T2 DE60033866T2 (de) | 2007-07-05 |
Family
ID=26334526
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60033866T Expired - Lifetime DE60033866T2 (de) | 1999-01-06 | 2000-01-03 | Planarisierungsverfahren und Planarisierungsvorrichtung |
DE60020614T Expired - Lifetime DE60020614T2 (de) | 1999-01-06 | 2000-01-03 | Planarisierungsvorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60020614T Expired - Lifetime DE60020614T2 (de) | 1999-01-06 | 2000-01-03 | Planarisierungsvorrichtung |
Country Status (8)
Country | Link |
---|---|
US (2) | US6431964B1 (de) |
EP (2) | EP1018400B1 (de) |
JP (1) | JP2000254857A (de) |
KR (1) | KR100650703B1 (de) |
DE (2) | DE60033866T2 (de) |
MY (1) | MY123347A (de) |
SG (1) | SG86364A1 (de) |
TW (1) | TW426582B (de) |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4577100A (en) * | 1983-12-27 | 1986-03-18 | United Technologies Corporation | Temperature compensated optical pressure sensor |
JP2000254857A (ja) * | 1999-01-06 | 2000-09-19 | Tokyo Seimitsu Co Ltd | 平面加工装置及び平面加工方法 |
JP2001157959A (ja) * | 1999-11-30 | 2001-06-12 | Tokyo Seimitsu Co Ltd | 平面加工装置 |
JP4642183B2 (ja) * | 2000-05-09 | 2011-03-02 | 不二越機械工業株式会社 | ウェーハの研磨装置 |
JP2002028073A (ja) * | 2000-07-13 | 2002-01-29 | Disco Abrasive Syst Ltd | 伸縮自在カーテン |
US6328042B1 (en) * | 2000-10-05 | 2001-12-11 | Lam Research Corporation | Wafer cleaning module and method for cleaning the surface of a substrate |
JP2002219645A (ja) * | 2000-11-21 | 2002-08-06 | Nikon Corp | 研磨装置、この研磨装置を用いた半導体デバイス製造方法並びにこの製造方法によって製造された半導体デバイス |
JP4455750B2 (ja) * | 2000-12-27 | 2010-04-21 | 株式会社ディスコ | 研削装置 |
JP4594545B2 (ja) * | 2001-03-28 | 2010-12-08 | 株式会社ディスコ | 研磨装置及びこれを含んだ研削・研磨機 |
SG131737A1 (en) | 2001-03-28 | 2007-05-28 | Disco Corp | Polishing tool and polishing method and apparatus using same |
JP4580118B2 (ja) * | 2001-03-28 | 2010-11-10 | 株式会社ディスコ | 研磨方法及び研削・研磨方法 |
JP2002343756A (ja) * | 2001-05-21 | 2002-11-29 | Tokyo Seimitsu Co Ltd | ウェーハ平面加工装置 |
US6746308B1 (en) * | 2001-07-11 | 2004-06-08 | Advanced Micro Devices, Inc. | Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same |
JP4617028B2 (ja) * | 2001-08-17 | 2011-01-19 | 株式会社ディスコ | 加工歪除去装置 |
JP2003197710A (ja) * | 2001-12-27 | 2003-07-11 | Sharp Corp | 板状物の薄層加工装置及び板状物の薄層加工方法 |
JP4190211B2 (ja) * | 2002-06-05 | 2008-12-03 | 株式会社東京精密 | 基板加工方法および基板加工装置 |
KR100487546B1 (ko) * | 2002-09-11 | 2005-05-03 | 삼성전자주식회사 | 반도체 웨이퍼를 연마하기 위한 설비 |
JP2004207607A (ja) * | 2002-12-26 | 2004-07-22 | Disco Abrasive Syst Ltd | 半導体ウェーハの分割方法 |
ITTV20030091A1 (it) * | 2003-06-20 | 2004-12-21 | For El Base Di Davanzo Nadia & C S Nc | Macchina automatica per la smerigliatura dei bordi delle lastre di vetro e procedimento automatico per la smerigliatura dei bordi delle lastre di vetro. |
JP4464113B2 (ja) | 2003-11-27 | 2010-05-19 | 株式会社ディスコ | ウエーハの加工装置 |
US7011567B2 (en) * | 2004-02-05 | 2006-03-14 | Robert Gerber | Semiconductor wafer grinder |
US7163441B2 (en) * | 2004-02-05 | 2007-01-16 | Robert Gerber | Semiconductor wafer grinder |
JP2006102830A (ja) * | 2004-10-01 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 研磨方法 |
US20060205217A1 (en) * | 2005-03-10 | 2006-09-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for reducing wafer edge tungsten residue utilizing a spin etch |
DE102005012446B4 (de) * | 2005-03-17 | 2017-11-30 | Siltronic Ag | Verfahren zur Material abtragenden Bearbeitung einer Halbleiterscheibe |
JP2006303329A (ja) * | 2005-04-22 | 2006-11-02 | Fuji Electric Holdings Co Ltd | シリコン基板の薄板加工方法およびそれに用いられる加工装置 |
JP4790322B2 (ja) * | 2005-06-10 | 2011-10-12 | 株式会社ディスコ | 加工装置および加工方法 |
JP2007123687A (ja) * | 2005-10-31 | 2007-05-17 | Tokyo Seimitsu Co Ltd | 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置 |
JP2007165802A (ja) * | 2005-12-16 | 2007-06-28 | Disco Abrasive Syst Ltd | 基板の研削装置および研削方法 |
DE102006001935A1 (de) * | 2006-01-14 | 2007-07-19 | Supfina Grieshaber Gmbh & Co.Kg | Bearbeiten von Wafern in einer Aufspannung |
JP2007214457A (ja) * | 2006-02-10 | 2007-08-23 | Tokyo Seimitsu Co Ltd | ウェーハ加工装置及び方法 |
JP4838614B2 (ja) * | 2006-03-29 | 2011-12-14 | 株式会社岡本工作機械製作所 | 半導体基板の平坦化装置および平坦化方法 |
JP5254539B2 (ja) * | 2006-08-09 | 2013-08-07 | 株式会社ディスコ | ウエーハ研削装置 |
JP5133573B2 (ja) | 2007-02-02 | 2013-01-30 | 東京エレクトロン株式会社 | 載置装置 |
JP5037974B2 (ja) * | 2007-03-14 | 2012-10-03 | 株式会社岡本工作機械製作所 | 研磨加工ステージにおける半導体基板の監視機器および監視方法 |
US7750657B2 (en) | 2007-03-15 | 2010-07-06 | Applied Materials Inc. | Polishing head testing with movable pedestal |
GB2464841B (en) * | 2007-05-07 | 2012-01-18 | Symyx Solutions Inc | Apparatus and method for moving a substrate |
US7909678B2 (en) * | 2007-08-27 | 2011-03-22 | Schott Ag | Method for manufacturing silicone wafers |
JP5164559B2 (ja) * | 2007-12-27 | 2013-03-21 | 株式会社ディスコ | 研削装置 |
KR100862607B1 (ko) * | 2008-01-22 | 2008-10-09 | 주식회사 엔티에스 | 사파이어 웨이퍼 후면 연마 장치 |
JP2009238853A (ja) * | 2008-03-26 | 2009-10-15 | Tokyo Seimitsu Co Ltd | ウェーハ処理方法およびウェーハ処理装置 |
WO2010045151A2 (en) * | 2008-10-16 | 2010-04-22 | Applied Materials, Inc. | Textured platen |
JP2011003691A (ja) * | 2009-06-18 | 2011-01-06 | Okamoto Machine Tool Works Ltd | 半導体基板のパッド搬送機構 |
DE102009048757A1 (de) * | 2009-10-08 | 2011-04-14 | Satisloh Ag | Vorrichtung zur Feinbearbeitung von optisch wirksamen Flächen an Werkstücken, insbesondere Brillengläsern |
JP5406676B2 (ja) * | 2009-11-10 | 2014-02-05 | 株式会社ディスコ | ウエーハの加工装置 |
JP5123329B2 (ja) * | 2010-01-07 | 2013-01-23 | 株式会社岡本工作機械製作所 | 半導体基板の平坦化加工装置および平坦化加工方法 |
TWI409135B (zh) * | 2010-07-23 | 2013-09-21 | Hon Hai Prec Ind Co Ltd | 滾圓及研磨設備 |
JP5635892B2 (ja) * | 2010-12-07 | 2014-12-03 | 株式会社ディスコ | 研削装置 |
CN102528643A (zh) * | 2010-12-30 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨设备及其研磨单元 |
US8844106B2 (en) * | 2011-11-10 | 2014-09-30 | Lam Research Corporation | Installation fixture for elastomer bands and methods of using the same |
US10643853B2 (en) | 2012-02-10 | 2020-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer thinning apparatus having feedback control and method of using |
US9570311B2 (en) * | 2012-02-10 | 2017-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Modular grinding apparatuses and methods for wafer thinning |
SG10201405978QA (en) * | 2013-09-25 | 2015-04-29 | Ebara Corp | Lifting device, substrate processing apparatus provided with lifting device, and method of conveying unit |
US9355882B2 (en) * | 2013-12-04 | 2016-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transfer module for bowed wafers |
US9583377B2 (en) | 2013-12-17 | 2017-02-28 | Lam Research Corporation | Installation fixture for elastomer bands |
JP2015170617A (ja) * | 2014-03-04 | 2015-09-28 | 東京エレクトロン株式会社 | 液処理装置 |
CN103878677B (zh) * | 2014-03-06 | 2016-05-18 | 浙江工业大学 | 一种带旋转框架的圆锥研磨装置 |
KR101684747B1 (ko) * | 2014-12-30 | 2016-12-20 | 주식회사 엘지실트론 | 웨이퍼 에지 연삭 장치 |
KR20160125585A (ko) * | 2015-04-21 | 2016-11-01 | 삼성전자주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP6523872B2 (ja) * | 2015-08-27 | 2019-06-05 | 株式会社ディスコ | 研削装置 |
JP2017054872A (ja) * | 2015-09-08 | 2017-03-16 | 株式会社東京精密 | ウェーハ研削方法及びウェーハ研削装置 |
CN106041706B (zh) * | 2016-07-20 | 2018-02-23 | 华侨大学 | 蓝宝石晶片腐蚀抛光复合加工机床 |
JP6283081B1 (ja) * | 2016-09-28 | 2018-02-21 | 株式会社東京精密 | 加工装置のセッティング方法 |
JP6803187B2 (ja) * | 2016-10-05 | 2020-12-23 | 株式会社ディスコ | 研削砥石のドレッシング方法 |
JP6635003B2 (ja) * | 2016-11-02 | 2020-01-22 | 株式会社Sumco | 半導体ウェーハの両面研磨方法 |
CN106625158A (zh) * | 2017-01-24 | 2017-05-10 | 王文胜 | 一种石材磨光机 |
JP6379232B2 (ja) * | 2017-01-30 | 2018-08-22 | 株式会社東京精密 | 研削装置 |
JP6909598B2 (ja) * | 2017-03-13 | 2021-07-28 | 光洋機械工業株式会社 | 平面研削方法及び平面研削装置 |
CN107263267A (zh) * | 2017-07-05 | 2017-10-20 | 北京中电科电子装备有限公司 | 一种晶圆减薄抛光装置 |
TWI633281B (zh) | 2017-11-17 | 2018-08-21 | 財團法人工業技術研究院 | 量測夾持裝置及量測方法 |
JP2018142717A (ja) * | 2018-04-20 | 2018-09-13 | 株式会社東京精密 | ウェハ加工方法及びウェハ加工システム |
JP2018133593A (ja) * | 2018-05-22 | 2018-08-23 | 株式会社東京精密 | ウェハ加工方法及びウェハ加工システム |
TWI860380B (zh) * | 2019-07-17 | 2024-11-01 | 日商東京威力科創股份有限公司 | 基板加工裝置、基板處理系統及基板處理方法 |
JP6911950B2 (ja) * | 2020-01-10 | 2021-07-28 | 株式会社Sumco | 半導体ウェーハの洗浄装置および半導体ウェーハの洗浄方法 |
WO2021166687A1 (ja) * | 2020-02-17 | 2021-08-26 | 東京エレクトロン株式会社 | 加工装置 |
CN111633520B (zh) * | 2020-06-10 | 2021-06-18 | 清华大学 | 一种高度集成化的减薄设备 |
CN115592550B (zh) * | 2022-12-14 | 2023-04-28 | 杭州中欣晶圆半导体股份有限公司 | 一种晶片抛光用抽排装置及其抽排方法 |
Family Cites Families (26)
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---|---|---|---|---|
JPS6076959A (ja) | 1983-09-30 | 1985-05-01 | Fujitsu Ltd | 半導体装置の製造方法 |
DE3743275C1 (de) * | 1987-12-19 | 1989-07-27 | Thielenhaus Maschf | Verfahren zum Planschleifen von gleichen Werkstueck-Rohlingen |
JP2894153B2 (ja) | 1993-05-27 | 1999-05-24 | 信越半導体株式会社 | シリコンウエーハの製造方法、およびその装置 |
JPH09500457A (ja) * | 1993-07-15 | 1997-01-14 | プレシジョン・ダイナミクス・コーポレイション | 改良されたポケット型同定用ブレスレット |
JPH0740239A (ja) * | 1993-08-02 | 1995-02-10 | Sony Corp | 研削研磨装置及び方法 |
US5827110A (en) * | 1994-12-28 | 1998-10-27 | Kabushiki Kaisha Toshiba | Polishing facility |
US5655954A (en) * | 1994-11-29 | 1997-08-12 | Toshiba Kikai Kabushiki Kaisha | Polishing apparatus |
JP3534207B2 (ja) * | 1995-05-16 | 2004-06-07 | コマツ電子金属株式会社 | 半導体ウェーハの製造方法 |
JPH08336741A (ja) | 1995-06-09 | 1996-12-24 | Tokyo Seimitsu Co Ltd | 表面研削方法 |
JP3697775B2 (ja) | 1996-03-19 | 2005-09-21 | ヤマハ株式会社 | 研磨装置 |
US5904611A (en) * | 1996-05-10 | 1999-05-18 | Canon Kabushiki Kaisha | Precision polishing apparatus |
ES2211390T3 (es) | 1996-06-15 | 2004-07-16 | Unova U.K. Limited | Maquina de rectificar con husillo flesible fijo a una plataforma. |
US6162112A (en) * | 1996-06-28 | 2000-12-19 | Canon Kabushiki Kaisha | Chemical-mechanical polishing apparatus and method |
DE19640098C1 (de) * | 1996-09-28 | 1998-03-26 | Siepmann & Co Gmbh & Co E | Doppel-Rundtisch-Schleifmaschine |
US5674116A (en) * | 1996-10-09 | 1997-10-07 | Cmi International Inc. | Disc with coolant passages for an abrasive machining assembly |
DE19641534C2 (de) * | 1996-10-09 | 1998-09-10 | Genauigkeits & Maschinenbau Nu | Schleifautomat |
JPH10329015A (ja) * | 1997-03-24 | 1998-12-15 | Canon Inc | 研磨装置および研磨方法 |
SG70097A1 (en) * | 1997-08-15 | 2000-01-25 | Disio Corp | Apparatus and method for machining workpieces by flushing working liquid to the tool-and-workpiece interface |
US5888120A (en) * | 1997-09-29 | 1999-03-30 | Lsi Logic Corporation | Method and apparatus for chemical mechanical polishing |
US5967885A (en) * | 1997-12-01 | 1999-10-19 | Lucent Technologies Inc. | Method of manufacturing an integrated circuit using chemical mechanical polishing |
US6042455A (en) * | 1997-12-11 | 2000-03-28 | Ebara Corporation | Polishing apparatus |
US5827111A (en) * | 1997-12-15 | 1998-10-27 | Micron Technology, Inc. | Method and apparatus for grinding wafers |
US6117778A (en) * | 1998-02-11 | 2000-09-12 | International Business Machines Corporation | Semiconductor wafer edge bead removal method and tool |
JPH11300607A (ja) * | 1998-04-16 | 1999-11-02 | Speedfam-Ipec Co Ltd | 研磨装置 |
JP2000015570A (ja) * | 1998-07-02 | 2000-01-18 | Disco Abrasive Syst Ltd | 研削装置 |
JP2000254857A (ja) * | 1999-01-06 | 2000-09-19 | Tokyo Seimitsu Co Ltd | 平面加工装置及び平面加工方法 |
-
1999
- 1999-11-11 JP JP32143299A patent/JP2000254857A/ja active Pending
- 1999-12-30 KR KR1019990066196A patent/KR100650703B1/ko not_active Expired - Fee Related
- 1999-12-30 TW TW088123345A patent/TW426582B/zh not_active IP Right Cessation
- 1999-12-31 MY MYPI99005838A patent/MY123347A/en unknown
-
2000
- 2000-01-03 DE DE60033866T patent/DE60033866T2/de not_active Expired - Lifetime
- 2000-01-03 EP EP00100004A patent/EP1018400B1/de not_active Expired - Lifetime
- 2000-01-03 EP EP05005154A patent/EP1541284B1/de not_active Expired - Lifetime
- 2000-01-03 DE DE60020614T patent/DE60020614T2/de not_active Expired - Lifetime
- 2000-01-04 US US09/477,449 patent/US6431964B1/en not_active Expired - Lifetime
- 2000-01-05 SG SG200000074A patent/SG86364A1/en unknown
-
2002
- 2002-06-19 US US10/173,787 patent/US6910943B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW426582B (en) | 2001-03-21 |
EP1541284B1 (de) | 2007-03-07 |
DE60020614T2 (de) | 2005-12-01 |
KR20000052631A (ko) | 2000-08-25 |
JP2000254857A (ja) | 2000-09-19 |
EP1018400B1 (de) | 2005-06-08 |
SG86364A1 (en) | 2002-02-19 |
EP1541284A1 (de) | 2005-06-15 |
DE60020614D1 (de) | 2005-07-14 |
KR100650703B1 (ko) | 2006-11-28 |
EP1018400A3 (de) | 2003-02-05 |
EP1018400A2 (de) | 2000-07-12 |
US20020160691A1 (en) | 2002-10-31 |
MY123347A (en) | 2006-05-31 |
DE60033866T2 (de) | 2007-07-05 |
US6910943B2 (en) | 2005-06-28 |
US6431964B1 (en) | 2002-08-13 |
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