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DE60016273T2 - Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat - Google Patents

Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat Download PDF

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Publication number
DE60016273T2
DE60016273T2 DE60016273T DE60016273T DE60016273T2 DE 60016273 T2 DE60016273 T2 DE 60016273T2 DE 60016273 T DE60016273 T DE 60016273T DE 60016273 T DE60016273 T DE 60016273T DE 60016273 T2 DE60016273 T2 DE 60016273T2
Authority
DE
Germany
Prior art keywords
capacitive
contacting
arrangement
carrier substrate
ultrasonic transmitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60016273T
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English (en)
Other versions
DE60016273D1 (de
Inventor
T Khuri-Yakub
Levent Degertekin
Sam Calmes
Xuecheng Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Application granted granted Critical
Publication of DE60016273D1 publication Critical patent/DE60016273D1/de
Publication of DE60016273T2 publication Critical patent/DE60016273T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
  • Micromachines (AREA)
DE60016273T 1999-09-30 2000-09-29 Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat Expired - Lifetime DE60016273T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15825499P 1999-09-30 1999-09-30
US09/667,203 US6430109B1 (en) 1999-09-30 2000-09-21 Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections
PCT/US2000/026852 WO2001023105A1 (en) 1999-09-30 2000-09-29 An array of capacitive micromachined ultrasonic transducer elements with through wafer via connections

Publications (2)

Publication Number Publication Date
DE60016273D1 DE60016273D1 (de) 2004-12-30
DE60016273T2 true DE60016273T2 (de) 2005-04-21

Family

ID=26854872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016273T Expired - Lifetime DE60016273T2 (de) 1999-09-30 2000-09-29 Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat

Country Status (5)

Country Link
US (1) US6430109B1 (de)
EP (1) EP1225984B1 (de)
JP (1) JP3924466B2 (de)
DE (1) DE60016273T2 (de)
WO (1) WO2001023105A1 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19922967C2 (de) * 1999-05-19 2001-05-03 Siemens Ag Mikromechanischer kapazitiver Ultraschallwandler und Verfahren zu dessen Herstellung
GB0011428D0 (en) * 2000-05-12 2000-06-28 Central Research Lab Ltd Method of forming a fluid tight seal
US20020115198A1 (en) * 2000-09-20 2002-08-22 Nerenberg Michael I. Microfabricated ultrasound array for use as resonant sensors
US6621137B1 (en) * 2000-10-12 2003-09-16 Intel Corporation MEMS device integrated chip package, and method of making same
US6669644B2 (en) * 2001-07-31 2003-12-30 Koninklijke Philips Electronics N.V. Micro-machined ultrasonic transducer (MUT) substrate that limits the lateral propagation of acoustic energy
US20030057544A1 (en) * 2001-09-13 2003-03-27 Nathan Richard J. Integrated assembly protocol
US20030059976A1 (en) * 2001-09-24 2003-03-27 Nathan Richard J. Integrated package and methods for making same
US6659954B2 (en) * 2001-12-19 2003-12-09 Koninklijke Philips Electronics Nv Micromachined ultrasound transducer and method for fabricating same
US20030153119A1 (en) * 2002-02-14 2003-08-14 Nathan Richard J. Integrated circuit package and method for fabrication
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US6831394B2 (en) * 2002-12-11 2004-12-14 General Electric Company Backing material for micromachined ultrasonic transducer devices
US6836020B2 (en) * 2003-01-22 2004-12-28 The Board Of Trustees Of The Leland Stanford Junior University Electrical through wafer interconnects
US7332850B2 (en) * 2003-02-10 2008-02-19 Siemens Medical Solutions Usa, Inc. Microfabricated ultrasonic transducers with curvature and method for making the same
US6936918B2 (en) * 2003-12-15 2005-08-30 Analog Devices, Inc. MEMS device with conductive path through substrate
US7030536B2 (en) * 2003-12-29 2006-04-18 General Electric Company Micromachined ultrasonic transducer cells having compliant support structure
US20050219953A1 (en) * 2004-04-06 2005-10-06 The Board Of Trustees Of The Leland Stanford Junior University Method and system for operating capacitive membrane ultrasonic transducers
JP4624763B2 (ja) * 2004-10-27 2011-02-02 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
US7375420B2 (en) * 2004-12-03 2008-05-20 General Electric Company Large area transducer array
TWI260940B (en) * 2005-06-17 2006-08-21 Ind Tech Res Inst Method for producing polymeric capacitive ultrasonic transducer
US7589456B2 (en) * 2005-06-14 2009-09-15 Siemens Medical Solutions Usa, Inc. Digital capacitive membrane transducer
WO2007024909A1 (en) * 2005-08-23 2007-03-01 Analog Devices, Inc. Multi-microphone system
US8372680B2 (en) 2006-03-10 2013-02-12 Stc.Unm Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
US7704874B1 (en) * 2006-10-02 2010-04-27 Newport Fab, Llc Method for fabricating a frontside through-wafer via in a processed wafer and related structure
JP5376982B2 (ja) * 2008-06-30 2013-12-25 キヤノン株式会社 機械電気変換素子と機械電気変換装置および機械電気変換装置の作製方法
US8358047B2 (en) * 2008-09-29 2013-01-22 Xerox Corporation Buried traces for sealed electrostatic membrane actuators or sensors
RU2547165C2 (ru) 2008-12-23 2015-04-10 Конинклейке Филипс Электроникс Н.В. Интегральная схема с подавлением паразитных акустических мод и способ ее изготовления
WO2010100861A1 (ja) 2009-03-05 2010-09-10 株式会社日立メディコ 超音波トランスデューサ、その製造方法、および、それを用いた超音波探触子
US8402831B2 (en) * 2009-03-05 2013-03-26 The Board Of Trustees Of The Leland Standford Junior University Monolithic integrated CMUTs fabricated by low-temperature wafer bonding
WO2010109205A2 (en) * 2009-03-26 2010-09-30 Ntnu Technology Transfer As Cmut array
JP5578810B2 (ja) 2009-06-19 2014-08-27 キヤノン株式会社 静電容量型の電気機械変換装置
JP5495918B2 (ja) * 2009-07-24 2014-05-21 キヤノン株式会社 電気機械変換装置、及び電気機械変換装置の作製方法
US8531919B2 (en) * 2009-09-21 2013-09-10 The Hong Kong Polytechnic University Flexible capacitive micromachined ultrasonic transducer array with increased effective capacitance
US8241931B1 (en) 2009-10-19 2012-08-14 Analog Devices, Inc. Method of forming MEMS device with weakened substrate
JP5538822B2 (ja) * 2009-11-06 2014-07-02 キヤノン株式会社 超音波検出装置及び超音波診断装置
JP5414546B2 (ja) 2010-01-12 2014-02-12 キヤノン株式会社 容量検出型の電気機械変換素子
JP5550363B2 (ja) * 2010-01-26 2014-07-16 キヤノン株式会社 静電容量型電気機械変換装置
JP5677016B2 (ja) * 2010-10-15 2015-02-25 キヤノン株式会社 電気機械変換装置及びその作製方法
JP5603739B2 (ja) 2010-11-02 2014-10-08 キヤノン株式会社 静電容量型電気機械変換装置
US9864190B2 (en) 2011-02-24 2018-01-09 The Board Of Trustees Of The Leland Stanford Junior University Confocal microscope, system and method therefor
JP5875243B2 (ja) * 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
JP5802448B2 (ja) * 2011-06-21 2015-10-28 オリンパス株式会社 超音波ユニット、超音波内視鏡および超音波ユニットの製造方法
JP2013051459A (ja) * 2011-08-30 2013-03-14 Canon Inc 電気機械変換装置及びその製造方法
IN2014CN02550A (de) * 2011-10-17 2015-08-07 Koninkl Philips Nv
CA2851839C (en) 2011-10-17 2020-09-15 Butterfly Network, Inc. Transmissive imaging and related apparatus and methods
US8541853B1 (en) 2012-03-22 2013-09-24 Texas Instruments Incorporated High frequency CMUT
WO2014123922A1 (en) 2013-02-05 2014-08-14 Butterfly Network, Inc. Cmos ultrasonic transducers and related apparatus and methods
US9375850B2 (en) * 2013-02-07 2016-06-28 Fujifilm Dimatix, Inc. Micromachined ultrasonic transducer devices with metal-semiconductor contact for reduced capacitive cross-talk
JP6279706B2 (ja) 2013-03-15 2018-02-14 バタフライ ネットワーク，インコーポレイテッド 超音波デバイスおよび超音波システム
US9242275B2 (en) 2013-03-15 2016-01-26 Butterfly Networks, Inc. Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
US9667889B2 (en) 2013-04-03 2017-05-30 Butterfly Network, Inc. Portable electronic devices with integrated imaging capabilities
WO2015013245A2 (en) 2013-07-23 2015-01-29 Butterfly Network, Inc. Interconnectable ultrasound transducer probes and related methods and apparatus
KR102126033B1 (ko) * 2013-10-23 2020-06-23 삼성전자주식회사 초음파 변환기 및 이를 채용한 초음파 진단장치
US10605903B2 (en) 2014-03-18 2020-03-31 Duke University pMUT array for ultrasonic imaging, and related apparatuses, systems, and methods
TWI687710B (zh) 2014-04-18 2020-03-11 美商蝴蝶網路公司 單基板超音波成像裝置的架構、相關設備及方法
JP6636502B2 (ja) 2014-04-18 2020-01-29 バタフライ ネットワーク，インコーポレイテッド 相補型金属酸化膜半導体（ｃｍｏｓ）ウェーハにおける超音波トランスデューサ並びに関連装置及び方法
AU2015247501B2 (en) 2014-04-18 2018-11-29 Butterfly Network, Inc. Ultrasonic imaging compression methods and apparatus
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
KR102207928B1 (ko) 2014-08-13 2021-01-26 삼성전자주식회사 음향 센싱 소자 및 주파수 정보 획득 방법
JP6478570B2 (ja) * 2014-11-12 2019-03-06 キヤノン株式会社 プローブ及び被検体情報取得装置
US10058892B2 (en) 2015-05-20 2018-08-28 uBeam Inc. Membrane bonding
US10315224B2 (en) 2015-05-20 2019-06-11 uBeam Inc. Ultrasonic transducer
US10065854B2 (en) * 2015-05-20 2018-09-04 uBeam Inc. Membrane bonding with photoresist
US10427188B2 (en) 2015-07-30 2019-10-01 North Carolina State University Anodically bonded vacuum-sealed capacitive micromachined ultrasonic transducer (CMUT)
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
CA3026157A1 (en) 2016-06-20 2017-12-28 Butterfly Network, Inc. Electrical contact arrangement for microfabricated ultrasonic transducer
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
AU2018289454A1 (en) 2017-06-21 2019-12-05 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
WO2019213388A1 (en) * 2018-05-03 2019-11-07 Butterfly Network, Inc. Pressure port for ultrasonic transducer on cmos sensor
TW201946700A (zh) 2018-05-03 2019-12-16 美商蝴蝶網路公司 超音波裝置
AU2019350989A1 (en) 2018-09-28 2021-03-25 Butterfly Network, Inc. Fabrication techniques and structures for gettering materials in ultrasonic transducer cavities
US11484911B2 (en) 2019-04-12 2022-11-01 Bfly Operations, Inc. Bottom electrode via structures for micromachined ultrasonic transducer devices
US11383269B2 (en) 2019-06-10 2022-07-12 Bfly Operations, Inc. Curved micromachined ultrasonic transducer membranes
US11260424B2 (en) 2020-01-20 2022-03-01 The Board Of Trustees Of The Leland Stanford Junior University Contoured electrode for capacitive micromachined ultrasonic transducer
TW202239483A (zh) 2021-03-04 2022-10-16 美商蝴蝶營運公司 具有不均勻柱腳的電容式微加工超音波換能器
WO2022187467A2 (en) 2021-03-04 2022-09-09 Butterfly Network, Inc. Micromachined ultrasound transducer with pedestal

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2721471B1 (fr) 1994-06-17 1996-08-02 Schlumberger Ind Sa Transducteur ultrasonore et procédé de fabrication d'un tel transducteur.
US5619476A (en) 1994-10-21 1997-04-08 The Board Of Trustees Of The Leland Stanford Jr. Univ. Electrostatic ultrasonic transducer
US5894452A (en) 1994-10-21 1999-04-13 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated ultrasonic immersion transducer
US5982709A (en) * 1998-03-31 1999-11-09 The Board Of Trustees Of The Leland Stanford Junior University Acoustic transducers and method of microfabrication

Also Published As

Publication number Publication date
EP1225984B1 (de) 2004-11-24
WO2001023105A1 (en) 2001-04-05
US6430109B1 (en) 2002-08-06
JP3924466B2 (ja) 2007-06-06
EP1225984A1 (de) 2002-07-31
WO2001023105A8 (en) 2001-08-16
DE60016273D1 (de) 2004-12-30
JP2003527947A (ja) 2003-09-24

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